• Journal of Powder Materials
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• v.22 no.3
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• pp.169-174
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• 2015

The optical film for light luminance improvement of BLU that is used in LCD/LED and retro-reflective film is used as luminous sign consist of square and triangular pyramid structure pattern based on V-shape micro prism pattern. In this study, we analyzed machining characteristics of Cu-plated flat mold by shaping with diamond tool. First, cutting conditions were optimizing as V-groove machining for the experiment of micro prism structure mold machining with prism pattern shape, cutting force and roughness. Second, the micro prism structure such as square and triangular pyramid pattern were machined by cross machining method with optimizing cutting conditions. Burr and chip shape were discussed with material properties and machining method.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.4
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• pp.326-331
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• 2000

We have fabricated the field emitter arrays coated with diamond-like carbon (DLC) films that improved the field emission characteristics. The nitrogen doped DLC films are prepared by the filtered cathodic vacuum are (FCVA) tehnique. The activation energy of the nitrogen doped DLC films are derived from electrical conductivity measurements. The silicon field emission arrays (FEAs) were prepared by the VLSI technique. The turn-on field was rapidly decreasing and the emission current was remarkably increasing the DLC-coated FEAs than the non-coated silicon FEAs. In the nitrogen doped FEAs, the turn-on field decreased and the emission current increased with increasing the nitrogen found out the field emission current and the work function of the DLC-coated FEAs was remarkably decreased than that of the non-coated silicon FEAs. As nitrogen doping concentrations are increased the work function of FEAs is decreased and the field emission properties are improved in nitrogen doped DLC-coated FEAs. This phenomenon in due the fact that the Fermi energy level moves to the conduction band by increasing nitrogen doping concentration.

• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1571-1573
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• 2003

Diamond films including nanocystalline and graphite phase are grown by microwave plasma chemical vapor deposition using $N_2$ additives and negative substrate bias at growth step. The microstructure of the films is controlled by changing $N_2$ gas ratio and negative bias. Defects and grain boundaries between diamond and graphite are proposed to be crucial factors for forming the conducting path of electron emissions. The effect of growth parameters on the film microstructure are investigated by Raman spectroscopy and scanning electron microscopy(SEM). Electron emission characteristics are also examined in terms of the film growth conditions.

• Journal of the Korean Chemical Society
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• v.48 no.6
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• pp.663-666
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• 2004

• Journal of the Korean institute of surface engineering
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• v.39 no.2
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• pp.82-86
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• 2006

Diamond films were deposited on 10.0$\times$10.0$mm^2$ pretreated (100) Si substrate using $CH_4$, $H_2$ and $O_2$ source gases in a horizontal-type microwave plasma enhanced chemical vapor deposition system. We introduced a cyclic on/off modulation of $CH_4$ and/or $O_2$ flows is a function of the reaction time during the initial deposition stage. Surface morphology and diamond quality of the films were investigated as a function of the different cyclic modulation process of the source gases flows: For the enhancement of the nucleation density, there is an optimal process for the incorporation of oxygen. Diamond qualities of the films were improved by introducing oxygen gas during the initial deposition stage.

• Korean Journal of Materials Research
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• v.4 no.5
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• pp.566-573
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• 1994

The diamond synthesis by combustion flame method is considerably affected by the substrate surface temperature and its distribution which are mainly controlled by the ratio of mixed gas, $O_2/C_2H_2$. In order to elucidate the role of gas ratio in the diamond synthetic process by combustion flame, under various gas ratios (R=0.87~0.98; R=ratio of flow-rate of $O_2/C_2H_2$ gas) the substrate temperature was measured by using thermal video system and the morphological change of diamond crystals was analysed by using SEM, Raman spectroscope, and X-ray diffraction method. With increasing the gas ratio, i.e., decreasing the hydrocarbon content, the nucleation rate of diamond crystal was lowerd. It was also found that the morphology of diamond crystals changed from the cubo-octahedron type consisting of (100), (111) plane to the octahedron type of (111) plane. The increase of the substrate temperature consistently resulted in the increase of the nucleation rate as well as the growth rate of diamond crystals in which the surface of diamond crystal dominantly consisting of (100) plane.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1696-1698
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• 1999

The methastable state diamond films have been deposited on Si substrates using MWPCVD. Effects of each experimental parameters of MWPCVD including $CH_4$ conentrations, Oxygen additions, Operating pressure, etc. on the growth rate and crystallinity were invesitigated. The best crystallinity of the film at 3% methane concentration addition of oxygen to the $CH_4-H_2O$ mixture gave an improved film crystallinity at 50% oxygen concentration. Upon increasing the operating pressure, the growth rate and crystallinity were increased simultaneously.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2002.10b
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• pp.147-148
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• 2002

This study made use of four kinds of mating balls that were made with stainless steel but subjected to different annealing conditions in order to achieve different levels of hardness. In all load conditions, testing results demonstrated that the harder the mating materials, the lower the friction coefficient was. Conversely, the high friction coefficient found in soft martensite balls appeared to be caused by the larger contact area between the DLC film and the ball. Raman Spectra analysis showed that the transferred materials were a kind of graphite and that the contact surface of the DLC film seemed to undergo a phase transition from carbon to graphite during the high friction process.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.2
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• pp.76-79
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• 1999

Low-hydrogenated DLC films were coated on the Mo-tip FEAs by 'layer-by-layer' process based on the plasma-enhanced CVD method. The hydrogen content in the DLC film deposited by the 'layer-by-layer' process was appeared to be remarkably lowered through SIMS analysis. Also, the low-hydrogenated DLC-coated Mo-tip FEA showed good potentiality for FED applications in terms of turn-on voltage, emission current, emission stability and light emitting uniformity.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.791-794
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• 2003

DLC thin films were prepared by microwave plasma-enhanced chemical vapor deposition method on silicon substrates using methane ($CH_4$) and hydrogen ($H_2$) gas mixture. The negative DC bias ($-450V{\sim}-550V$) was applied to enhance the adhesion between the film and the substrate. The films were characterized by Raman spectrometer. The surface morphology was observed by an atomic force microscope (AFM). And also, the friction coefficients were investigated by AFM in friction force microscope (FFM) mode, which were compared with the pin-on-disc (POD) measurement.