• Title/Summary/Keyword: DeviceNet

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An Analysis on the KSTAR neutral beam injection line (KSTAR 중성입자빔 수송라인 해석)

  • 임기학;김진춘;권경훈;조승연
    • Journal of the Korean Vacuum Society
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    • v.8 no.4B
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    • pp.556-564
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    • 1999
  • The analysis on heat fluxed on and transmission efficiencies by the collimators of neutral beam injection lines in KSTAR tokamak device has been carried out. And a mathematical model describing non-Gaussian beam distribution profile has been established. A neutral beam injection device is composed of 3 separate ion sources and corresponding beam transport lines, which deal with 7.8 MW of beam power, respectively. The divergence angles of ion beam are $1.2^{\circ}$and $0.5^{\circ}$, in vertical and horizontal directions, respectively. The maximum normal heat load on source exit scraper is 9.1 kW/$\textrm{cm}^2$ and net beam transmission efficiency is ~28%. The effect of misalignment of ion source and scrapers on the scraper heat load and beam transmission also has been analyzed.

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TWO-DIMENSIONAL SIMULATION OF HYDROGEN IODIDE DECOMPOSITION REACTION USING FLUENT CODE FOR HYDROGEN PRODUCTION USING NUCLEAR TECHNOLOGY

  • CHOI, JUNG-SIK;SHIN, YOUNG-JOON;LEE, KI-YOUNG;CHOI, JAE-HYUK
    • Nuclear Engineering and Technology
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    • v.47 no.4
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    • pp.424-433
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    • 2015
  • The operating characteristics of hydrogen iodide (HI) decomposition for hydrogen production were investigated using the commercial computational fluid dynamics code, and various factors, such as hydrogen production, heat of reaction, and temperature distribution, were studied to compare device performance with that expected for device development. Hydrogen production increased with an increase of the surface-to-volume (STV) ratio. With an increase of hydrogen production, the reaction heat increased. The internal pressure and velocity of the HI decomposer were estimated through pressure drop and reducing velocity from the preheating zone. The mass of $H_2O$ was independent of the STV ratio, whereas that of HI decreased with increasing STV ratio.

Improvement of Si solar cell efficiency by using surface treatments on the antireflection coating layers and electrodes

  • Yang, Cheng;Ryu, Seung-Heon;Yoo, Won-Jong;Kim, Dong-Ho;Kim, Teak
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2009.05a
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    • pp.202-203
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    • 2009
  • Plasma etching was studied to obtain high-efficiency Si solar cells. SiN nanoparticles were observed upon the plasma treatment using SF6 gas. The mechanism of the nanoparticles formation has been studied. A net increase in the current density (Jsc) of the cells of $1.7mA/cm^2$ and in the conversion efficiency ($\eta$) of 2.1% is obtained after the plasma treatment for 10s, thanks to the significant decrease of reflection in the shorter wavelength range.

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Development of Automatic Bonding System for GaAs Wafer (GaAs Wafer 접합용 본딩시스템 개발)

  • Song J.Y.;Kang J.H.;Lee C.W.;Ha T.H.;Jee W.H.;Kim W.K.
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2005.10a
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    • pp.427-431
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    • 2005
  • In this study, 6' GaAs wafer bonding system is designed and optimized to bond 6 inches device wafer and material wafer. Bonding process is performed in vacuum environment and resin is used to bond two wafers. Vacuum module and double heating mechanisms are adopted to minimize wafer warpage and void. Structure and heat transfer analysis, et al of the core modules review the designed mechanisms are very effective in performance improvement. As a result, high productivity (tack time cut-down) and stabilized process can be obtained by reducing breakage failure of wafer.

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A feasibility study of the Iranian Sun mather type plasma focus source for neutron capture therapy using MCNP X2.6, Geant4 and FLUKA codes

  • Nanbedeh, M.;Sadat-Kiai, S.M.;Aghamohamadi, A.;Hassanzadeh, M.
    • Nuclear Engineering and Technology
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    • v.52 no.5
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    • pp.1002-1007
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    • 2020
  • The purpose of the current study was to evaluate a spectrum formulation set employed to modify the neutron spectrum of D-D fusion neutrons in a IS plasma focus device using GEANT4, MCNPX2.6, and FLUKA codes. The set consists of a moderator, reflector, collimator and filters of fast neutron and gamma radiation, which placed on the path of 2.45 MeV neutron energy. The treated neutrons eliminate cancerous tissue with minimal damage to other healthy tissue in a method called neutron therapy. The system optimized for a total neutron yield of 109 (n/s). The numerical results indicate that the GEANT4 code for the cubic geometry in the Beam Shaping Assembly 3 (BSA3) is the best choice for the energy of epithermal neutrons.

FAST (floating absorber for safety at transient) for the improved safety of sodium-cooled burner fast reactors

  • Kim, Chihyung;Jang, Seongdong;Kim, Yonghee
    • Nuclear Engineering and Technology
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    • v.53 no.6
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    • pp.1747-1755
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    • 2021
  • This paper presents floating absorber for safety at transient (FAST) which is a passive safety device for sodium-cooled fast reactors with a positive coolant temperature coefficient. Working principle of the FAST makes it possible to insert negative reactivity passively in case of temperature rise or voiding of coolant. Behaviors of the FAST in conventional oxide fuel-loaded and metallic fuel-loaded SFRs are investigated assuming anticipated transients without scram (ATWS) scenarios. Unprotected loss of flow (ULOF), unprotected loss of heat sink (ULOHS), unprotected transient overpower (UTOP) and unprotected chilled inlet temperature (UCIT) scenarios are simulated at end of life (EOL) conditions of the oxide and the metallic SFR cores, and performance of the FAST to improve the reactor safety is analyzed in terms of reactivity feedback components, reactor power and maximum temperatures of fuel and coolant. It is shown that FAST is able to improve the safety margin of conventional burner-type SFRs during ULOF, ULOHS, UTOP and UCIT.

Study on changes in electrical and switching characteristics of NPT-IGBT devices by fast neutron irradiation

  • Hani Baek;Byung Gun Park;Chaeho Shin;Gwang Min Sun
    • Nuclear Engineering and Technology
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    • v.55 no.9
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    • pp.3334-3341
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    • 2023
  • We studied the irradiation effects of fast neutron generated by a 30 MeV cyclotron on the electrical and switching characteristics of NPT-IGBT devices. Fast neutron fluence ranges from 2.7 × 109 to 1.82 × 1013 n/cm2. Electrical characteristics of the IGBT device such as I-V, forward voltage drop and additionally switching characteristics of turn-on and -off were measured. As the neutron fluence increased, the device's threshold voltage decreased, the forward voltage drop increased significantly, and the turn-on and turn-off time became faster. In particular, the delay time of turn-on switching was improved by about 35% to a maximum of about 39.68 ns, and that of turn-off switching was also reduced by about 40%-84.89 ns, showing a faster switching.

Demonstration of an ultrasonic imaging system for molten lead

  • Jonathan Hawes;Jordan Knapp;Robert Burrows;Robert Montague;Paul Wilcox;Hual-Te Chien;Jeff Arndt;Steve Walters
    • Nuclear Engineering and Technology
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    • v.56 no.4
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    • pp.1460-1471
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    • 2024
  • 2D and 3D ultrasonic imaging has so far not been demonstrated in pure molten lead in the open literature. In this study the development of such an ultrasonic device for imaging is outlined and results from testing at 380 ℃ in lead are presented. The main difficulties were found to be achieving then maintaining suitable wetting while ensuring suitable durability of the device, both due to the harsh nature of molten lead and the elevated temperatures. The successful detection and imaging (2D and 3D), of differently shaped targets, where the features were above the size of the transmitted ultrasound beam was demonstrated.

A novel radiation-dependence model of InP HBTs including gamma radiation effects

  • Jincan Zhang;Haiyi Cai;Na Li;Liwen Zhang;Min Liu;Shi Yang
    • Nuclear Engineering and Technology
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    • v.55 no.11
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    • pp.4238-4245
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    • 2023
  • In order to predict the lifetime of InP Heterojunction Bipolar Transistor (HBT) devices and related circuits in the space radiation environment, a novel model including gamma radiation effects is proposed in this paper. Based on the analysis of radiation-induced device degradation effects including both DC and AC characteristics, a set of empirical expressions describing the device degradation trend are presented and incorporated into the Keysight model. To validate the effective of the proposed model, a series of radiation experiments are performed. The correctness of the novel model is validated by comparing experimental and simulated results before and after radiation.

FPGA Implementation of Underlying Field Arithmetic Processor for Elliptic Curve Cryptosystems (타원곡선 암호시스템을 위한 기저체 연산기의 FPGA 구현)

  • 조성제;권용진
    • Proceedings of the IEEK Conference
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    • 2000.11b
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    • pp.148-151
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    • 2000
  • In recent years, security is essential factor of our safe network community. Therefore, data encryption/ decryption technology is improving more and more. Elliptic Curve Cryptosystem proposed by N. Koblitz and V. Miller independently in 1985, require fewer bits lot the same security, there is a net reduction in cost, size, and time. In this paper, we design high speed underlying field arithmetic processor for elliptic curve cryptosystem. The targeting device is VIRTEX V1000FG680 and verified by Xilinx simulator.

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