Development of Automatic Bonding System for GaAs Wafer

GaAs Wafer 접합용 본딩시스템 개발

In this study, 6' GaAs wafer bonding system is designed and optimized to bond 6 inches device wafer and material wafer. Bonding process is performed in vacuum environment and resin is used to bond two wafers. Vacuum module and double heating mechanisms are adopted to minimize wafer warpage and void. Structure and heat transfer analysis, et al of the core modules review the designed mechanisms are very effective in performance improvement. As a result, high productivity (tack time cut-down) and stabilized process can be obtained by reducing breakage failure of wafer.