• Title/Summary/Keyword: Device-to-Device

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Effects of NMES and Horseback Riding Using a Robotic Device on the Trunk Muscle Activity and Gross Motor Function in Children with Spastic Diplegia

  • Park, Shin-Jun;Youn, Pong-Sub
    • The Journal of Korean Physical Therapy
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    • v.30 no.4
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    • pp.123-128
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    • 2018
  • Purpose: This study examined the effects of neuromuscular electrical stimulation (NMES) and horseback riding using a robotic device on the trunk muscle activity and gross motor function in children with spastic diplegia. Methods: Children with spastic diplegia were divided into two groups: an experimental group (NMES and horseback riding using a robotic device [n=10]) and a control group (placebo NMES and horseback riding using a robotic device [n=10]). Each group received general physical therapy and occupational therapy. Each intervention involved the administration of NMES for 15 minutes and horseback riding using robotic device therapy for 15 minutes three times a week for 4 weeks. The evaluation included both the rectus abdominis muscles (RA), external oblique muscles (EO), thoracic paraspinal muscles (TP), and lumbar paraspinal muscles (LP) activity and GMFM. Results: The RA, EO, TP, and LP muscle activity, GMFM C, D, and E were increased significantly in the experimental and control groups. A significant increase in both the TP muscle activity and GMFM D was observed in the experimental group compared to the control group. Conclusion: This study showed that horseback riding using a robotic device is an effective intervention for trunk muscle activity and GMFM in children with spastic diplegia. However, if NMES is added to the back muscles, it is possible to further increase the thoracic paraspinal muscle activity and standing ability.

Design of Device Management System for Removing Smartphone Malware (스마트폰 악성코드 제거를 위한 단말 관리 시스템 설계)

  • Jeong, Gi-Seog
    • Convergence Security Journal
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    • v.11 no.4
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    • pp.67-75
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    • 2011
  • Recently, the number of smartphone users is rising rapidly due to an influx of foreign smartphones and sales of domestic products. According to the increase of smartphone users, smartphone malwares are also increasing sharply. Hence it is necessary to protect smartphone against mobile malwares. There are device management protocols as SNMP, TR-069. But these protocols are not suitable for mobile device management because of restrictive management function and unsupported mobility. OMA DM which is a standard for mobile device management has been adopted as mobile device management protocol for most of 2G,3G. Thus it amounts that OMA DM is suitable for smartphone management system. In this paper, the mobile device management system based on OMA DM is designed. This system can remove smartphone malware by remote control.

A Study on the Effect of Medical Device Purchase Decision Making (의료기기 구매의사결정에 영향을 주는 요인에 관한 연구)

  • Yeo, Jin Dong;Kim, Hye Sook;Kim, Mi Sook
    • The Korean Journal of Health Service Management
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    • v.2 no.1
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    • pp.28-36
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    • 2008
  • The purpose of this study was effect that get to purchase decision-making factor of medical device decision making. A survey of 262 hospitals to 480 hospitals was conducted from December 3, 2007 to January 4, 2008 in the Busan area. The data generated in the survey was analyzed with SPSS/Win version 10.0 and appropriate tests and statistics including t-tests, ANOVA analyses were used. A summary of the actual results of this analysis are as follows : Of the 262 hospitals surveyed 249(95.1%) were male and 13(4.9%) were female, which shows an absolute higher ration of the male respondents. On a question of Medical device purchase sanction rise 50% occupy. CEO of a hospital($4.58{\pm}.80$) is highest at medical device purchase. The highest factor of medical device purchasing is picture quality($4.86{\pm}.37$), after service($4.84{\pm}.40$), cost($4.36{\pm}.75$). Through the results of the above study, Principle and department influence are put than human relations in the medical device purchase decision making.

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Correct Posture Guidance System using 3-axis Acceleration Sensor for Scoliosis Patient (3축 가속도 센서를 이용한 자세 교정 유도 시스템)

  • An, Yang-Soo;Kim, Keo-Sik;Seo, Jeong-Hwan;Song, Chul-Gyu
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.59 no.1
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    • pp.220-224
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    • 2010
  • In this study, we designed a device for consecutively observing position, utilizing 3-axises acceleration sensor. This method offer to check his or her wrong position and developed could to help derived a position appliance. And, we developed a Cobb's angle value in three dimensional using 3-axises acceleration sensor. A proposed device with integrated accelerometers, which can detect postural changes in terms of curvature variation of the spine in the sagittal and coronal planes, has been developed with intention to facilitate posture training. The proposed device was evaluated with 3 normal subjects daily activities. We evaluated the performance of our designed device as calculating the correlation coefficients and mean errors between the angle measured by an electro-goniometer and that estimated by a gravity accelerometer and verified the accuracy and sensitivity. The results showed that the angle obtained from the proposed device revealed a linear characteristic at the range of $\pm60^{\circ}$(correlation coefficient 0.99, error range $\pm2^{\circ}$). We demonstrated that our device could detect the changes of the motion in upper trunk accurately. Also, our device showed good potential for treatment of the patients with scoliosis and prevention of the unbalance position during a daily life.

Analysts on the Sealing of Nano Structure MOSFET (나노 구조 MOSFET의 스켈링에 대한 특성 분석)

  • 장광균;정학기;이종인
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.5 no.3
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    • pp.573-579
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    • 2001
  • The technology for characteristic analysis of device for high integration is changing rapidly. Therefore to understand characteristics of high -integrated device by computer simulation and fabricate the device having such characteristics became one of very important subjects. As devices become smaller from submicron to nanometer, we have investigated MOSFET built on an epitaxial layer(EPI) of a heavily-doped ground plane by TCAD(Technology Computer Aided Design) to develop optimum device structure. We analyzed and compared the EPI device characteristics such as impact ionization, electric field and I-V curve with those of lightly doped drain(LDD) MOSFET. Also, we presented that TCAD simulator is suitable for device simulation and the scaling theory is suitable at nano structure device.

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Development of the Intelligent Switchgear Prototype with Arc Fault Detection Capability (아크고장 검출 기능을 가지는 지능형 분전반 개발)

  • Ko, Yun-Seok;Lee, Seo-Han
    • The Journal of the Korea institute of electronic communication sciences
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    • v.11 no.1
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    • pp.59-64
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    • 2016
  • This paper aims at the prototype-making of the intelligent switchgear with arc fault diagnosis function required to prevent the electrical fire. The main control unit of the intelligent switchgear consists of a single-phase power management device and a arc fault diagnosis device. The prototype of the single-phase power management device and the prototype of the arc fault diagnosis device in this paper. In the device, the cooperation function with the arc fault diagnosis device is developed to transmit the cause of the electrical fire to the remote server system.

A Study on USIM Card Based User and Device Authentication Scheme in the Smartwork (USIM을 활용한 스마트워크 사용자 및 디바이스 인증 기술 연구)

  • Wi, Yukyeong;Kwak, Jin
    • Journal of Korea Multimedia Society
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    • v.16 no.3
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    • pp.309-317
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    • 2013
  • As the distribution rate of smart device increases, users of smartwork are increasingly able to work without constraints imposed by time and space. However, there are many security threats in smartwork environment. Security threats is illegal information for an unauthenticated device. Especially, smartwork environment is approach to users. Therefore, there are other matters concerning justifiable user and device authentication. However, the studies of smartwork are still in early stage of development, and the studies of user and device authentication also not enough to apply smartwork environment. In this paper, we proposed USIM based user and device authentication scheme in the smartwork environment.

Least Squares Method-Based System Identification for a 2-Axes Gimbal Structure Loading Device (2축 짐벌 구조 적재 장치를 위한 최소제곱법 기반 시스템 식별)

  • Sim, Yeri;Jin, Sangrok
    • The Journal of Korea Robotics Society
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    • v.17 no.3
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    • pp.288-295
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    • 2022
  • This study shows a system identification method of a balancing loading device for a stair climbing delivery robot. The balancing loading device is designed as a 2-axes gimbal structure and is interpreted as two independent pendulum structures for simplifying. The loading device's properties such as mass, moment of inertia, and position of the center of gravity are changeable for luggage. The system identification process of the loading device is required, and the controller should be optimized for the system in real-time. In this study, the system identification method is based on least squares method to estimate the unknown parameters of the loading device's dynamic equation. It estimates the unknown parameters by calculating them that minimize the error function between the real system's motion and the estimated system's motion. This study improves the accuracy of parameter estimation using a null space solution. The null space solution can produce the correct parameters by adjusting the parameter's relative sizes. The proposed system identification method is verified by the simulation to determine how close the estimated unknown parameters are to the real parameters.

A Study on the Calibration of GaAs-based 0.1-$\mu\textrm{m}$ $\Gamma$-gate MHEMT DC/RF Characteristics for the Development and Fabrication of over-100-GHz Millimeter-wave HEMT devices (100GHz 이상의 밀리미터파 HEMT 소 제작 및 개발을 위한 GaAs기반 0.1$\mu\textrm{m}$ $\Gamma$-게이트MHEMT의 DC/RF 특성에 대한 calibration 연구)

  • 손명식;이복형;이진구
    • Proceedings of the IEEK Conference
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    • 2003.07b
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    • pp.751-754
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    • 2003
  • Metamorphic HEMTs (MHEMTs) have emerged as excellent challenges for the design and fabrication of high-speed HEMTs for millimeter-wave applications. Some of improvements result from improved mobility and larger conduction band discontinuity in the channel, leading to more efficient modulation doping, better confinement, and better device performance compared with pseudomorphic HEMTs. We have studied the calibration on the DC and RF characteristics of the MHEMT device using I $n_{0.53}$G $a_{0.47}$As/I $n_{0.52}$A1$_{0.48}$As modulation-doped heterostructure on the GaAs wafer. For the optimized device performance simulation, we calibrated the device performance of 0.1-${\mu}{\textrm}{m}$ $\Gamma$-gate MHEMT fabricated in our research center using the 2D ISE-DESSIS device simulator. With this calibrated parameter set, we have obtained very good reproducibility. The device simulation on the DC and RF characteristics exhibits good reproducibility for our 0.1-${\mu}{\textrm}{m}$ -gate MHEMT device compared with the measurements. We expect that our calibration result can help design over-100-GHz MHEMT devices for better device performance.ormance.

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Calibration Study on the DC Characteristics of GaAs-based $In_{0.52}Al_{0.48}As/In_{0.53}Ga_{0.47}As$ Heterostructure Metamorphic HEMTs (GaAs 기반 $In_{0.52}Al_{0.48}As/In_{0.53}Ga_{0.47}As$ 이종접합 구조를 갖는 MHEMT 소자의 DC 특성에 대한 calibration 연구)

  • Son, Myung-Sik
    • Journal of the Semiconductor & Display Technology
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    • v.10 no.1
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    • pp.63-73
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    • 2011
  • Metamorphic HEMTs (MHEMTs) have emerged as excellent challenges for the design and fabrication of high-speed HEMTs for millimeter-wave applications. Some of improvements result from improved mobility and larger conduction band discontinuity in the channel, leading to more efficient modulation doping, better confinement, and better device performance compared with conventional pseudomorphic HEMTs (PHEMTs). For the optimized device design and development, we have performed the calibration on the DC characteristics of our fabricated 0.1 ${\mu}m$ ${\Gamma}$-gate MHEMT device having the modulation-doped $In_{0.52}Al_{0.48}As/In_{0.53}Ga_{0.47}$As heterostructure on the GaAs wafer using the hydrodynamic transport model of a commercial 2D ISE-DESSIS device simulator. The well-calibrated device simulation shows very good agreement with the DC characteristic of the 0.1 ${\mu}m$ ${\Gamma}$-gate MHEMT device. We expect that our calibration result can help design over-100-GHz MHEMT devices for better device performance.