• Korean Journal of Clinical Pharmacy
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• v.19 no.1
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• pp.65-68
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• 2009

Disposal infusion device is known to be useful for chemotherapy. Anti-cancer drug can be released by the force of carbon dioxide or balloon. In this study, we compared the$Anapa^{(R)}$ (LC0020) with B Company (LV2 ml) in terms of infusion rate and stability. Infusion rate was determined every six minute using software, MSI08IH. Stability of 5-fluorouracil was examined periodically using a High Performance Liquid Chromatography. Infusion rates of gas-derived $Anapa^{(R)}$ device were 2.29, 1.86, 1.98 ml/hr and those of balloon-derived B Company device were 1.71, 1.58, 1.37 ml/min. There were no significant differences in stability of 5-fluorouracil between $Anapa^{(R)}$ and B Company devices. In summary, gas-derived $Anapa^{(R)}$ device is thought to be comparable or superior to balloon-derived B Company device as far as infusion rate and stability are concerned. We expect that $Anapa^{(R)}$ as a home infusion device can be employed to improve a quality of life and compliance of cancer patients.

• The Transactions of the Korean Institute of Power Electronics
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• v.25 no.3
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• pp.204-212
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• 2020

In this study, device suitability analysis is performed by comparing the performance of SiC MOSFET and GaN Transistor, which are WBG power semiconductor devices in the induction heating (IH) system. WBG devices have the advantages of low conduction resistance, switching losses, and fast switching due to their excellent physical properties, which can achieve high output power and efficiency in IH systems. In this study, SiC and GaN are applied to a general half-bridge series resonant converter topology to compare the conduction loss, switching loss, reverse conduction loss, and thermal performance of the device in consideration of device characteristics and circuit conditions. On this basis, device suitability in the IH system is analyzed. A half-bridge series resonant converter prototype using the SiC and GaN of a 650-V rating is constructed to verify device suitability through performance comparison and verified through an experimental comparison of power loss and thermal performance.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.22 no.12
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• pp.1659-1666
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• 2018

When the input sound is mixed voice and sound, it can be seen that the voice recognition rate is lowered due to the noise, and the speech recognition rate is improved by improving the MEMS device which is the H / W device in order to overcome the S/W processing limit. The MEMS microphone device is a device for inputting voice and is implemented in various shapes and used. Conventional MEMS microphones generally exhibit excellent performance, but in a special environment such as noise, there is a problem that the processing performance is deteriorated due to a mixture of voice and sound. To overcome these problems, we developed a newly designed MEMS device that can detect the voice characteristics of the initial input device.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.12 no.2
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• pp.150-154
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• 2019

In the design of semiconductor integrated circuits, ESD is one of the important issues related to product quality improvement and reliability. In particular, as the process progresses and the thickness of the gate oxide film decreases, ESD is recognized as an important problem of integrated circuit design. Many ESD protection circuits have been studied to solve such ESD problems. In addition, the proposed device can modify the existing SCR structure without adding external circuit to effectively protect the gate oxide of the internal circuit by low trigger voltage, and prevent the undesired latch-up phenomenon in the steady state with high holding voltage. In this paper, SCR-based novel ESD(Electro-Static Discharge) device with the high holding voltage has been proposed. The proposed device has the lower triggering voltage without an external trigger circuitry and the high holding voltage to prevent latch-up phenomenon during the normal condition. Using TCAD simulation results, not only the design factors that influence the holding voltage, but also comparison of conventional ESD protection device(ggNMOS, SCR), are explained. The proposed device was fabricated using 0.35um BCD process and was measured electrical characteristic and robustness. In the result, the proposed device has triggering voltage of 13.1V and holding voltage of 11.4V and HBM 5kV, MM 250V ESD robustness.

• Nuclear Engineering and Technology
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• v.54 no.2
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• pp.442-448
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• 2022

Intermediate-level radioactive waste (ILW) is not subject to legal approval for cave disposal in Korea. To solve this problem, a spent resin treatment device that separates ¹⁴C-containing resin from zeolite/activated carbon and desorbs ¹⁴C through a microwave device has been developed. In this study, we evaluated the radiological safety of the operators performing repair work in the event of a failure in such a device treating 1 ton of spent resin mixture per day. Based on the safety evaluation results, it is possible to formulate a design plan that can ensure the safety of workers while developing a commercialized device. When each component of the resin treatment device can be repaired from the outside, the maximum and minimum allowable repair times are calculated as 263.2 h and 27.7 h for the ¹⁴C-detached resin storage tank and zeolite/activated carbon storage tank, respectively. For at least 6 h per quarter, the worker's annual dose limit remains within 50 mSv/year; further, over 5 years, it remained within 100 mSv. At least 6 h of repair time per quarter is considered, under conservative conditions, to verify the radiological safety of the worker during repair work within that time.

• Journal of Sensor Science and Technology
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• v.33 no.3
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• pp.165-172
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• 2024

In this study, we investigated the detection properties of piezoresistive carbon nanotubes/polydimethylsiloxane (CNT/PDMS) devices with porous structures under applied pressure. The device, having dimensions of 10 mm × 10 mm × 5 mm, was fabricated with a porosity of 74.5%. To fabricate piezoresistive CNT/PDMS devices, CNTs were added using two different methods. In the first method, the CNTs were mixed with PDMS before the fabrication of the porous structure, while in the second, the CNTs were coated after the fabrication of the porous structure. Various detection properties of the fabricated devices were examined at different applied pressures. The CNT-coated device exhibited stable outputs with lesser variation than the CNT-mixed device. Moreover, the CNT-coated device exhibited improved reaction properties. The response time of the CNT-coated device was 1 min, which was approximately about 20 times faster than that of the CNT-mixed device. Considering these properties, CNT-coated devices are more suitable for sensing devices. To verify the CNT-coated device as a real sensor, it was applied to the gripping sensor system. A multichannel sensor system was used to measure the pressure distribution of the gripping sensor system. Under various gripping conditions, this system successfully measured the distributed pressures and exhibited stable dynamic responses.

• 제어로봇시스템학회:학술대회논문집
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• 2005.06a
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• pp.1662-1667
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• 2005

In this paper, analysis, design, control and prototype construction of a wearable wire-driven haptic interface called HapticPen is discussed. This device can be considered as a wire driven parallel mechanism which three wires are attached to a pen-tip. Wire tensions are provided utilizing three DC servo motors which are attached to a solid frame on the user's body. This device is designed as input as well as output device for a wearable PC. User can write letters or figures on a virtual plate in space. Pen-tip trajectory in space is calculated using motor encoders and force feedback resulting from contact between pen and virtual plate is provided for constraining the pen-tip motion onto the virtual plane that can be easily setup by arbitrary non-collinear three points in space. In this paper kinematic model, workspace analysis, application analysis, control and prototype construction of this device are presented. Preliminary experiments on handwriting in space show feasibility of the proposed device in wearable environments.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.10
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• pp.102-110
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• 1995

This paper describes a development of the PLD design tool in considering with a device fitting. To design digital circuit with PLDs, several steps in the developed PLD design tool are needed such as Boolean description step, pin map step, FUSE map and JEDEC steps ... etc. Especially, we have considered the device fitting to design large digital circuits with PLDs developed the device fitting algorithms based on the PLD device fitting and compared with the results of a another PLD design tool(PALASM). Also, we have proved that the developed PLD design tool is successfully implemented by the connection with a PLD writer(ALL-07), in the case of design digital circuits.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.8
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• pp.78-88
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• 1992

To improve the characteristics of sub$\mu$m short channel MOSFET device, a new device having the convex structure is proposed. This device has 3-dimensionally expandable channel length according to the vertical etched silicon height. For the purpose of comparing the DC and AC characteristics, planar device is also fabricated. Comparing the channel length, the convex device with 0.4$\mu$m silicon height is larger about 0.56$\mu$m in NMOS and 0.78$\mu$m in PMOS than planar devices. DC characteristics, such as threshold voltage, operational current, substrate current and breakdown voltage are compared together with AC characteristics using the ring oscillator inverter delay. Also process and device simulation are performed and the differences between convex and pranaldevice are also compared.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.12
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• pp.953-958
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• 2001

The antifuse is a semi-permanent memory device like a ROM which shows the open or short state, and a switch device connecting logic blocks selectively in FPGA. In addition, the antifuse has been used as a logic device to troubleshoot defective memory cells arising from SDRAM processing. In this study, we have fabricated ONO antifuses consisted of PIP structure. The antifuse shows a high resistance more than several G Ω in the normal state, and shows a low resistance less than 500 Ω after program. The program resistance variation according to temperature shows the very stable value of $\pm$20 Ω. At this time, its program voltage shows 6.7∼7.2 V and the program is performed within 1 second. Therefore this result shows that the PIP antifuse is a very stable and programmable logic device.