• Journal of Korean Society for Quality Management
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• v.38 no.4
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• pp.504-511
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• 2010

A fuze detonator comprising star shells is an important device so that its failure usually leads to failure of the shells. In this paper, accelerated degradation tests of RD1333 (lead azide) using temperature stress were performed, and then degradation data of explosive power for the detonator were analyzed to predict the storage lifetime of detonator. Degradation data analysis to estimate the storage lifetime is based on a distribution-based degradation process. Statistical distribution parameters of explosive power degradation measures at each time were estimated for each temperature level, and then reliability of the detonator for each accelerated temperature level was estimated using both time-varying distribution parameters and critical level of explosive power. Arrhenius model was applied to estimate storage lifetime of the detonator under the field temperature condition. Accelerated distribution-based degradation analysis to estimate storage lifetime is explained in detail, and estimation results are compared to field data of storage lifetime in this paper.

• Journal of the Korean Applied Science and Technology
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• v.32 no.1
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• pp.1-6
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• 2015

We investigated green phosphorescent organic light-emitting diodes with stepwise doping to improve efficiency roll-off and operational lifetime by efficient distribution of triplet excitons. The host material which was 4,4,N,N'-dicarbazolebiphenyl (CBP) of bipolar characteristic that can control the carrier in emitting layer (EML). When the EML devided into four parts with different doping concentration, each devices shows various efficiency roll-off and lifetime enhancement. The distribution of the carrier and excitons in the EML can be confirmed by using stepwise doping structure. The properties of device C exhibited luminous efficiency of 51.10 cd/A, external quantum efficiency of 14.88%, respectively. Lifetime has increased 73.70% compared to the reference device.

• Journal of Applied Reliability
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• v.10 no.4
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• pp.279-297
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• 2010

AQS(Air Quality Control System) is the important part of a car air conditioning system. This device intercepts automatically the influx of harmful waste gas. In this paper reliability assessment criteria for AQS are established in terms of quality certification test and lifetime test. The former quality certification test comprises general performance test and environmental test. Items which pass the test undergo lifetime test which guarantees the extent of mean lifetime with certain confidence.

• Journal of Applied Reliability
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• v.15 no.1
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• pp.67-75
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• 2015

Differential pressure sensor for DPF (Diesel Particulate Filter) is the important part of a automobile exhaust system. This device measures the pressure of before DOC and after DPF to determine whether the DPF regenerate. In this paper reliability assessment criteria for DPF differential pressure sensor are established on terms of quality calcification test and lifetime test. The former quality certification test comprises general performance test and environmental test. Items which pass the test undergo lifetime test which guarantees the extent of mean lifetime with certain confidence.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1703-1705
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• 2007

Before the ultra-violet glue encapsulation, the research evaporated LiF thin film on device surface to be the extra packaging layer for improving the lifetime of organic light-emitting diode. The formula of UV glue was specially developed. We found 100 nm LiF is the optimum thickness. The best lifetime obtained by using LiF and special UV glue is 2.4 times longer than those by commercial UV glue.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.32 no.5
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• pp.430-436
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• 2008

This paper proposes a way to predict electrical lifetime of a relay using Accelerated Life Testings (ALTs). The relay of interest mounting on printed circuit boards is usually under an inrush current stress. The inrush current is generated and accelerated through controlling a lamp switching device in the ALT. We find that the dominant failure mechanism under high levels of inrush current would be contact welding in the contact surface of the relay and the contact welding process is accelerated according to increase in inrush current. The electrical lifetime model based on Inverse Power Law in term of inrush current is proposed, and parameters characterizing relay's lifetime distribution are statistically estimated using ALTA 6 PRO software.

• Journal of Internet of Things and Convergence
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• v.9 no.3
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• pp.81-86
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• 2023

SSD (solid state disk), which is flash memory-based storage device, has the advantages of high density and fast data processing. Therefore, it is being utilized as a storage device for high-capacity data storage systems that manage rapidly increasing big data. However, flash memory, a storage media, has a physical limitation that when the write/erase operation is repeated more than a certain number of times, the cells are worn out and can no longer be used. In this paper, we propose a method for converting defective multi-bit cells into single-bit cells to reduce the defect rate of flash memory and extend its lifetime. The proposed idea distinguishes the defects and treatment methods of multi-bit cells and single-bit cells, which have different physical characteristics but are treated as the same defect, and converts the expected defective multi-bit cells into single-bit cells to improve the defect rate and extend the overall lifetime. Finally, we demonstrate the effectiveness of our proposed idea by measuring the increased lifetime of SSD through simulations.

• JSTS:Journal of Semiconductor Technology and Science
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• v.5 no.2
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• pp.69-76
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• 2005

Interface-trap density, lifetime and Schottky barrier height of erbium-silicided Schottky diode are evaluated using equivalent circuit method. The extracted interface trap density, lifetime and Schottky barrier height for hole are determined as $1.5{\times}10^{13} traps/cm^2$, 3.75 ms and 0.76 eV, respectively. The interface traps are efficiently cured by $N_2$ annealing. Based on the diode characteristics, various sizes of erbium- silicided/platinum-silicided n/p-type Schottky barrier metal-oxide-semiconductor field effect transistors (SB-MOSFETs) are manufactured from 20 m to 35nm. The manufactured SB-MOSFETs show excellent drain induced barrier lowering (DIBL) characteristics due to the existence of Schottky barrier between source and channel. DIBL and subthreshold swing characteristics are compatible with the ultimate scaling limit of double gate MOSFETs which shows the possible application of SB-MOSFETs in nanoscale regime.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.1014-1018
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• 2007

We have demonstrated the enhancement of the power efficiency and device lifetime of organic light-emitting diodes (OLEDs) by introducing the ETL 1 / ETL2 (composite ETL) structure between EML and cathode and the HIL1 (composite HIL) / HIL2 between anode and HTL. Compared to reference devices retaining conventional architecture, novel OLED structure shows an outstanding EL efficiency that is 1.6 times higher (${\sim}4.5$ lm/w versus ${\sim}$ 2.71 lm/w for the reference device) and lower driving voltage $({\bigtriangleup}V>1V)$, but also a longer lifetime and smaller operating voltage drift over time. It is suggested in this work that the device performance can be improved by in-situ ohmic contact through novel electron controlled structure and reduction of charge accumulation in the interface through composite HIL

• The KIPS Transactions:PartA
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• v.15A no.4
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• pp.211-216
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• 2008

In this paper we fabricated and measured the $0.26{\mu}m$ NMOSFET with wet gate oxide and nitride oxide gate to compare that the charateristics of hot carrier effect, charge to breakdown, transistor Id_Vg curve, charge trapping, and SILC(Stress Induced Leakage Current) using the HP4145 device tester. As a result we find that the characteristics of nitride oxide gate device better than wet gate oxide device, especially hot carrier lifetime(nitride oxide gate device satisfied 30 years, but the lifetime of wet gate oxide was only 0.1 year), variation of Vg, charge to breakdown, electric field simulation and charge trapping etc.