• 한국광학회:학술대회논문집
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• 한국광학회 1989년도 제4회 파동 및 레이저 학술발표회 4th Conference on Waves and lasers 논문집 - 한국광학회
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• pp.230-234
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• 1989

Pyroelectric TGS(triglycine sulfate) detectors, whose thicknesses are 0.1mm and 0.2 mm, are fabricated using the grown TGS crystals from aqueous solution. The outut power and noise from these detectors are measured as a function of chopping frequency in the range from 10Hz to 160Hz with the interval of 10Hz. Response time, responsivity and detectivity are derived from the measured output power and noise of the detectors. The results show that the response time is about 15ms, resposivity is 100V/W at 10Hz and the detectivity at the maximum spectral wavelength D{{{{ lambda }}P* is about 10 cmHz1/2w-1.

• 한국정보통신학회논문지
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• 제7권3호
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• pp.454-460
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• 2003

The modulated frequency dependence on the pyroelectric properties of LiTaO$_3$ single crystal was investigated by the dynamic method. The pyroelectric coefficient of LiTaO$_3$ single crystal was 2.1${\times}$$10^{-8}$/$\textrm{cm}^2$ㆍK. and figure of merits for the responsivity and the detectivity were 1.31${\times}$$10^{-10}$Cㆍcm/J and 1.47${\times}$$10^{-8}$C\ulcornercm/J. respectively. The voltage responsivity corresponded with the pyroelectric voltage exhibited the highest value as about 165V /W at 4Hz and then was in inverse proportion to the frequency over 20Hz. The noise equivalent power and the detectivity at 4Hz were 8.4${\times}$$10^{-9}$ W/Hz$^{1}$2/ and 2.2${\times}$$10^{7}$ cmㆍHz$^{1}$2//W, respectively. Therefore, we could found that LiTaO$_3$ single crystal shows a excellent pyroelectric properties in low frequency region for the human body detection.tection.

• 반도체디스플레이기술학회지
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• 제11권4호
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• pp.19-23
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• 2012

We report microbolometer characteristic with n-type and p-type amorphous silicon thin film. The n-type and p-type amorphous silicon thin films were made by PECVD. The electrical properties of n-type and p-type a-Si:H thin films were investigated as a function of doping gas flow rate. The doping gas used $B_2H_6/Ar$ (1:9) and $PH_3/Ar$ (1:9). In general, the conductivity of doping a-Si:H thin films increased as doping gas increase but the conductivity of a-Si:H thin films decreased as the doping gas increase because doping gas concentration increase led to dilution gas (Ar) increase as the same time. We fabricated an amorphous silicon microbolometer using surface micromachining technology. The fabricated microbolometer had a negative TCR of 2.3%. The p-type microbolometer had responsivity of $5{\times}10^4V/W$ and high detectivity of $3{\times}10^8cm(Hz)^{1/2}/W$. The p-type microbolometer had more detectivity than n-type for less noise value.

• 전자공학회논문지A
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• 제32A권3호
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• pp.124-133
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• 1995

A theoretical self-consistent thermoelectric model has been developed for optimal thermal design in the self-signal processing infraed detectors. The model is achived by employing the coupled thermoelectric equation which allows which allows the simultaneous investigation of the termal and electrical aspects of device behavior. The thermal limitation of detectivity and responsivity are determined by the enegy gap, carrier concentration, lifetime, and mobility as a function of the temperature. The calculated results indicate that the detectivity is decreased at bias fields above about 50 V/cm, because the performence is limiting by temperature when the bias voltage reached the level associated with Joule heating. It has been also found that the improvement in the mid-band modulation transfer function(MTF) may be restricted by increasing the bias fields. Further, the important paramerers in the thermal optimization of SPIR detector, such as temperature in the device, ambipolar velocity, element thickness and length, are also considered. The analytical study provides a mathematical basis for optimal design of such a photoconductive IR detector and the agreement between the experimental and theoretical results are seen to be good.

• Current Optics and Photonics
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• 제6권4호
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• pp.367-374
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• 2022

A photodetector based on a reduced graphene oxide (RGO)/n-Si heterojunction with high responsivity, detectivity and fast response speed is presented. Here, we put forward a simple vacuum filtration method to prepare RGO film and transfer it onto an n-Si substrate to form an RGO/n-Si heterojunction. The experimental results show that the heterojunction has good rectification characteristics, and the response and recovery time are less than 0.31 s and 0.25 s, respectively. Under 470 nm light conditions at -2 V applied voltage, the responsivity and detectivity of the device are 65 mA/W and 4.02 × 10¹⁰ cmHz^1/2W^-1, respectively. The simple preparation process and good performance of the RGO/n-Si heterojunction make it a promising material for photoelectric detection, especially in the near-ultraviolet band.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.104-107
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• 2001

The fabricated La-modified lead titanate (PLT) thin flim without paling treatment was investigated for modulation frequency dependence of pyroelectric properties by the dynamic method. $Pb_{1-x}La_{x}Ti_{1-x/4}O_{3}$ PLT (x=0.1) thin film having 10 mol% La content was deposited on a $Pt/TiO_{x}/SiO_{2}/Si$ substrate by sol-gel method. The PLT(10) thin film exhibits a relatively excellent dielectric property. The pyroelectric coefficient (p) of the PLT(10) thin film is $6.6{\times}10^{-9}C/cm_{2}\cdot K$ without frequency dependence. The figure of merits for the voltage responsivity and specific detectivity are $1.03{\times}10^{-11}C\cdot cm/J$ and $1.46\times 10^{-9}C\cdot cm/J$, respectively. The PLT(10) thin film has voltage responsivity (Rv) of 5.15 V/W at 8 Hz. Noise equivalent power (NEP) and specific detectivity (D*) of the PLT(10) thin film are$9.93{\times}10^{-8}W/Hz^{1/2}$ and $1.81\times 10^{6}cmHz^{1/2}/W$ at the same frequency of 100 Hz, respectively. The results means that PLT thin film having 10 mol % La content is suitable for the sensing materials of pyroelectric IR sensors.

• 한국전기전자재료학회논문지
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• 제13권10호
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• pp.859-864
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• 2000

Recently IR detecting devices using MEMS have been actively studied. Microbolometer, one of these devices, detects the change of resistivity as the change of temperature of the device by absorbing IR, IR absorbing materials for microbolometer should have high TCR value and low noise characteristics which depends on resistivity. We fabricated multi-layer VOx thin films to improve the IR detectivity of uncooled IR devices and analyzed IR absorbing characteristics. We fabricated multi-layer VOx thin films by RF reactive sputtering method on SiNx substrate and changed characteristics using the different thickness of V and V$_2$O$\_$5/ thin films. Then we annealed them under 300$\^{C}$. The TCR (Temperature Coefficient of Resistance) measurement was carried out to estimate the IR detectivity of multi-layer VOx thin films. XRD (X-Ray Diffraction) analysis was carried out to estimate the IR detectivity of multi-layer VOx thin films. ZXRD (X-Ray Diffraction) analysis was used to find out phases and structures of V and V$_2$O$\_$5/ thin films. AES (Auger Electron Spectroscopy) analysis was used to find out composition of multi-layer VOx thin films before and after annealing. We obtained the optimum thickness range of V and V$_2$O$\_$5/ thin films from the result of AES analysis. We changed the thickness of V$_2$O$\_$5/ about 20 to 150 $\AA$ and thickness of V about 10 to 20 $\AA$. As the result of this, TCR value of multi-layer VOx thin films was about -2%/k and the resistivity was ∼1Ωcm.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.104-107
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• 2001

The fabricated La-modified lead titanate (PLT) thin flirt without poling treatment was investigated for modulation frequency dependence of pyroelectric properties by the dynamic method. $Pb_{1-x}La_{x}Ti_{1-x/4}O_3$PLT (x=0.1) thin film having 10 mol% La content was deposited on a Pt/$TiO_{x}$/$SiO_2$/Si substrate by sol-gel method. The PLT(10) thin film exhibits a relatively excellent dielectric property. The pyroelectric coefficient (p) of the PLT(10) thin film is 6.6 x $10^{-9}$C/$\textrm{cm}^2$.K without frequency dependence. The figure of merits for the voltage responsivity and specific detectivity are 1.03${\times}$$10^{-11}$/C.cm/J and 1.46 x $10^{-9}$C.cm/J, respectively. The PLT(10) thin film has voltage responsivity ($R_{V}$) of 5.15 V/W at 8 Hz. Noise equivalent power (NEP) and specific detectivity (D＊) of the PLT(10) thin film are 9.93 x $10^{-8}$W/Hz$^{1/2}$ and 1.81 x $10^{6}$ cmHz$^{1/2}$/W at the same frequency of 100 Hz, respectively. The results means that PLT thin film having 10 mol % La content is suitable for the sensing materials of pyroelectric IR sensors.

• 대한전자공학회논문지SD
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• 제39권10호
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• pp.35-42
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• 2002

Modulation frequency dependences of the pyroelectric properties of PLT (P $b_{1-x}$ L $a_{x}$ $Ti_{1-x}$ 4/ $O_3$) thin films with La concentrations of 5, 10 and 15㏖% have been investigated by using the dynamic method. The PLT thin film with 10㏖% of the La concentration (PLT(10) thin film) shows the most excellent pyroelectric properties among the films. For PLT(10) thin film, the pyroelectric coefficient shows the maximum value of 6.6$\times$10$^{-9}$ C/$\textrm{cm}^2$ㆍK without frequency dependence. The figure of merits for the voltage responsivity and specific detectivity are 1.03$\times$10$^{-11}$ Cㆍcm/J and 1.46$\times$10$^{-9}$ Cㆍcm/J, respectively. Voltage responsivity corresponding to the pyroelectric voltage is almost constant at low modulation frequency and decreases in proportional to frequency at high modulation frequency. Voltage responsivity is 5.15 V/W at 8Hz. Noise equivalent power (NEP) and specific detectivity ( $D^{*}$) of the PLT(10) thin film are 9.93$\times$10$^{-8}$ W/H $z^{1}$2/ and 1.81$\times$10$^{6}$ cmH $z^{1}$2/W at the frequency of 100Hz, respectively. The results indicate that PLT(10) thin film is very suitable for pyroelectric IR sensors.s.s.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.348-348
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• 2016

Low dark current (off-current) and high photo current are both essential for a solution processed organic photodetector (OPD) to achieve high photo-responsivity. Currently, most OPDs utilize a bulk heterojunction (BHJ) photo-active layer that is prepared by the one-step deposition of a polymer:fullerene blend solution. However, the BHJ structure is the main cause of the high dark current in solution processed OPDs. It is revealed that the detectivity and spectral responsivity of the OPD can be improved by utilizing a photo-active layer consisting of an interdiffused polymer/fullerene bilayer (ID-BL). This ID-BL is prepared by the sequential solution deposition (SqD) of poly(3-hexylthiophene) (P3HT) and [6,6] phenyl C61 butyric acid methyl ester (PCBM) solutions. The ID-BL OPD is found to prevent undesirable electron injection from the hole collecting electrode to the ID-BL photo-active layer resulting in a reduced dark current in the ID-BL OPD. Based on dark current and external quantum efficiency (EQE) analysis, the detectivity of the ID-BL OPD is determined to be $7.60{\times}1011$ Jones at 620 nm. This value is 3.4 times higher than that of BHJ OPDs. Furthermore, compared to BHJ OPDs, the ID-BL OPD exhibited a more consistent spectral response in the range of 400 - 660 nm.