• Journal of the Korean institute of surface engineering
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• v.50 no.3
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• pp.219-224
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• 2017

The K gettering in $SiO_2/PSG/SiO_2/Al-1%Si$ multilevel thin films was investigated using SIMS(secondary ion mass spectrometry) and XPS(X-ray Photoelectron Spectroscopy) analysis. DC magnetron sputter techniques and APCVD(atmosphere pressure chemical vapor deposition) were utilized for the deposition of Al-1%Si thin films and $SiO_2/PSG/SiO_2$ passivations, respectively. Heat treatment was carried out at $400^{\circ}C$ for 5 h in air. SIMS depth profiling was used to determine the distribution of K, Al, Si, P and other elements throughout the $SiO_2/PSG/SiO_2/Al-1%Si$ multilevel thin films. XPS was used to analyze binding energies of Si and P elements in PSG passivation layers. K peaks were observed throughout the $PSG/SiO_2$ passivation layers on the Al-1%Si thin films and especially at the $PSG/SiO_2$ interfaces. K gettering in $SiO_2/PSG/SiO_2/Al-1%Si$ multilevel thin films is considered to be caused by a segregation type of gettering. The chemical state of Si and P elements in PSG passivation appears to be $SiO_2$ and $P_2O_5$, respectively

• Korean Journal of Materials Research
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• v.13 no.1
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• pp.43-47
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• 2003

As and BF$_2$dopants are implanted for the formation of source/drain with dose of 1${\times}$10$^{15}$ ions/$\textrm{cm}^2$∼5${\times}$10$^{15}$ ions/$\textrm{cm}^2$ then formed cobalt disilicide with Co/Ti deposition and doubly rapid thermal annealing. Appropriate ion implantation and cobalt salicide process are employed to meet the sub-0.13 $\mu\textrm{m}$ CMOS devices. We investigated the process results of sheet resistance, dopant redistribution, and surface-interface microstructure with a four-point probe, a secondary ion mass spectroscope(SIMS), a scanning probe microscope (SPM), and a cross sectional transmission electron microscope(TEM), respectively. Sheet resistance increased to 8%∼12% as dose increased in $CoSi_2$$n^{＋}$ and $CoSi_2$$p^{V}$ , while sheet resistance uniformity showed very little variation. SIMS depth profiling revealed that the diffusion of As and B was enhanced as dose increased in $CoSi_2$$n^{＋}$ and $CoSi_2$$p^{＋}$ . The surface roughness of root mean square(RMS) values measured by a SPM decreased as dose increased in $CoSi_2$$n^{＋}$ , while little variation was observed in $CoSi_2$$p^{＋}$ . Cross sectional TEM images showed that the spikes of 30 nm∼50 nm-depth were formed at the interfaces of $CoSi_2$$n^{＋}$ / and $CoSi_2$/$p^{＋}$, which indicate the possible leakage current source. Our result implied that Co/Ti cobalt salicide was compatible with high dose sub-0.13$\mu\textrm{m}$ process.

• Bulletin of the Korean Chemical Society
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• v.31 no.8
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• pp.2170-2174
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• 2010

The surfaces of $TiO_2$ and ZnO nanoparticles have been modified by gold (Au) nanoparticles by a reduction method in solution. Their interfacial electronic structures and optical absorptions have been studied by depth-profiling X-ray photoelectron spectroscopy (XPS) and UV-vis absorption spectroscopy, respectively. Upon Au-modification, UV-vis absorption spectra reveal a broad surface plasmon peak at around 500 nm. For the as-prepared Au-modified $TiO_2$ and ZnO, the Au $4f_{7/2}$ XPS peaks exhibit at 83.7 and 83.9 eV, respectively. These are due to a charge transfer effect from the metal oxide support to the Au. For $TiO_2$, the larger binding energy shift from that (84.0 eV) of bulk Au could indicate that Au-modification site of $TiO_2$ is different from that of ZnO. On the basis of the XPS data with sputtering depth, we conclude that cationic (1+ and 3+) Au species, plausibly $Au(OH)_x$ (x = 1-3), commonly form mainly at the Au-$TiO_2$ and Au-ZnO interfaces. With $Ar^+$ ion sputtering, the oxidation state of Ti dramatically changes from 4+ to 3+ and 2+ while that (2+) of Zn shows no discernible change based on the binding energy position and the full-width at half maximum (FWHM).

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.188.1-188.1
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• 2014

Aluminum is widely used as a material for electrode on silicon based devices. Especially, aluminum films are used as backside and front-side electrodes in silicon quantum dot (QD) solar cells. In this point, the diffusion of aluminum is very important for the enhancement of power conversion efficiency by improvement of contact property. Aluminum was deposited on a Si (100) wafer and a Si QD layer by ion beam sputter system with a DC ion gun. The Si QD layer was fabricated by $1100^{\circ}C$ annealing of the $SiO_2/SiO_1$ multilayer film grown by ion beam sputtering deposition. Cs ion beam with a low energy and a grazing incidence angle was used in SIMS depth profiling analysis to obtain high depth resolution. Diffusion behavior of aluminum in the Al/Si and Al/Si QD interfaces was investigated by secondary ion mass spectrometry (SIMS) as a function of heat treatment temperature. It was found that aluminum is diffused into Si substrate at $450^{\circ}C$. In this presentation, the effect of heat treatment temperature and Si nitride diffusion barrier on the diffusion of Al will be discussed.

• Journal of Korean Society of Coastal and Ocean Engineers
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• v.7 no.3
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• pp.277-288
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• 1995

Prediction of turbidity due to fine-grained bed material load under wave action is critical to any assessment of anthropogenic impart on the coastal or lacustrine environment Waves tend to loosen mud deposits and generate steep suspension concentration gradients, such that the sediment load near the bottom is typically orders of magnitude higher than that near the surface. In a physically realistic but simplified manner, a simple mass conservation principle has been used to simulate the evolution of fine sediment concentration profiles and corresponding erodible bed depths under progressive, nonbreaking wave action over mud deposits. Prior field observations support the simulated trends. which reveal the genesis of a near-bed. high concentration fluidized mud layer coupled with very low surficial sediment concentrations. It is concluded that estimation of the depth of bottom erosion requires an understanding of mud dynamics and competent in situ sediment concentration profiling. Measurement of sediment concentration at the surface alone, without regard to the near-bed zone, can lead to gross underestimation of the erodible bed depth.

• The Journal of Engineering Geology
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• v.4 no.2
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• pp.187-206
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• 1994

Through a computer model study, optimum system configuration and field parameters were determined for high-resolution marine reflection surveys. Characteristics of far-field signatures were analysed in both time and frequency domains for the six individual R/V Onnuri. The analysis shows that the cluster fired at the depth of 2m below the sea surface generates the most ideal far-field signatures among the above seismic sources. Compared with the 96-channel streamer on the R/V Onnuri, the 12-channel streamer is suitable for shallow reflection profiling due to its high resolution both in the vertical and horizontal directions despite its lower signal-to-noise ratio. Considering factors including target depth, frequency range, airgun volume, number of recording channels, and capacity of compressors, optimum values for record length, sample period, and shot interval are believed to be is, 1ms, and 3.125m or 6.25m, respectively.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.100.1-100.1
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• 2010

고효율 실리콘 양자점 태양전지를 제작하기 위해 Si과 C target을 co-sputtering 방식으로 제조한 SiC matrix를 열처리하여 박막 내에 Si nanocrystal들을 생성하였다. Si nanocrystal의 특성은 다양한 요인에 영향을 받는 데 barrier 물질인 SiC matrix가 가장 큰 영향을 준다. SiC는 900도 이상에서 열처리하는 동안 Si과 C과 SiC으로 재배열 혹은 재결합하는 데 이 때 가장 작은 carbon이 빠르게 diffusion하는 현상에 의해 Si nanocrystal의 성장과 특성에 영향을 주게 된다. 이 현상을 연구하기 위해 stoichiometric SiC/Si-rich SiC/stoichiometric SiC의 3층 구조로 시료를 제작하여 이를 SIMS의 depth profiling을 통하여 열처리 전보다 열처리 후에 Si-rich SiC layer내에 carbon이 약 2~3%정도 증가한 것으로 carbon이 diffusion된 것을 확인하였다. 이 시료를 UV-VIS-NIR spectroscopy, Raman, GIXRD 등의 다양한 측정을 통하여 carbon diffusion에 의한 Si nanocrystal의 특성변화를 연구하였다.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.11a
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• pp.44.2-44.2
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• 2009

Polycrystalline materials suchas yttria and alumina have been applied as a plasma resisting material for the plasma processing chamber. However, polycrystal line material may easily generate particles and the particles are sources of contamination during the plasma enhanced process. Amorphous material can be suitable to prevent particle generation due to absence of grain-boundaries. We manufactured nitrogen-containing $SiO_2-Al_2O_3-Y_2O_3$ based glasses with various contents of silicon and fixed nitrogen content. The thermal properties, mechanical properties and plasma etching rate were evaluated and compared for the different composition samples. The plasma etching behavior was estimated using XPS with depth profiling. From the result, the plasma etching rate highly depends on the silicon content and it may results from very low volatile temperature of SiF4 generated during plasma etching. The silicon concentration at the plasma etched surface was very low besides the concentration of yttrium and aluminum was relatively high than that of silicon due to high volatile temperature of fluorine compounds which consisted with aluminum and yttrium. Therefore, we conclude that the samples having low silicon content should be considered to obtain low plasma etching rate for the plasma resisting material.

• ETRI Journal
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• v.11 no.4
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• pp.84-97
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• 1989

The influence of Zn, Si and Te diffusion on the interdiffusion in $GaAs-Ga_1_-xIN_xAs_1__yP_y$and InP$Ga_1__xIn_xAs_1__yP_y$ heterostructures was studied. The heterostructures were grown by liquid phase epitaxy, and the impurity diffusion into the heterostructures was carried out using metal compound or element sources. The extent of interdiffusion for both group III and V atoms was observed by depth profiling of matrix elements with secondary ion mass spectrometry and Auger electron spectroscopy. Selective enhancement of cation interdiffusion was observed by the concurrent Zn diffusion in both the GaAs based-and InP based-crystals. In contrast to the Zn diffusion, the Si diffusion in the GaAs based-crystal and the Te diffusion in the InP based-crystal enhanced both cation and anion interdiffusion to the same extent. A kick-out mechanism is proposed to explain the selective enhancement of the cation interdiffusion due to Zn, and a single vacancy mechanism is proposed for the interdiffusion due to Si and Te.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.342.1-342.1
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• 2014

The electrical, optical and structural properties of Ti doped $In_2O_3$ (TIO) ohmic contacts to p-type GaN were investigated using linear facing target sputtering (LFTS) system. Sheet resistance and resistivity of TIO films are decreased with increasing rapid thermal annealing (RTA) temperature. Although the $400^{\circ}C$ and $500^{\circ}C$ annealed samples showed rectifying behavior, the $600^{\circ}C$ and $700^{\circ}C$ annealed samples showed linear I-V characteristics indicative of the formation of an ohmic contact between TIO and p-GaN. The annealing of the contact at $700^{\circ}C$ resulted in the lowest specific contact resistivity of $9.5{\times}10^{-4}{\Omega}cm^2$. Based on XPS depth profiling and synchrotron X-ray scattering analysis, we suggested a possible mechanism to explain the annealing dependence of the properties of TIO layer on rapid thermal annealing temperature.