• Proceedings of the SCSK Conference
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• 2003.09b
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• pp.218-218
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• 2003

Recently we showed the prototype portable device for the determination of human skin moisture by using near infrared spectroscopy. In order to optimize the acquiring condition of NIR spectrum of skin and control the target information of water depending the site such as epidermis and dermis, skin depth profiling was investigated changing the distance between illuminations and receiving of radiation in the terminal of fiber probe. The colleted light information could be controlled by changing the distance of the fiber optic probes. It was confirmed that the longer distance we used, the deeper site from the skin surface we could get information from in this study. Four kinds of probes with distances such as 0.03 mm, 0.1 mm, 0.5 mm, and 1.0 mm were used. In addition, the gap size from 0.3 mm to 3.0 mm was studied to control the intensity of water absorbance effectively and to avoid saturation of water absorption. We also investigated the reference materials depending the reflectance ratio for water absorption not to be saturated because of the strong absorptivity of water. Furthermore, spectroscopic information regarding free water and bound water around 1850 nm was investigated by using the different distance of fiber optic probes. This study would be great help to control the spectroscopic information of water to be measured depending the site where water exists.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.231-231
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• 2012

Correct determination of the interface locations is critical for the calibration of the depth scale and measurement of layer thickness in SIMS depth profiling analysis of multilayer films. However, the interface locations are difficult to determine due to the unwanted distortion from the real ones by the several effects due to sputtering with energetic ions. In this study, the layer thicknesses of Si/Ge and Si/Ti multilayer films were measured by SIMS depth profiling analysis using the oxygen and cesium primary ion beam. The interface locations in the multilayer films could be determined by two methods. The interfaces can be determined by the 50 at% definition where the atomic fractions of the constituent layer elements drop or rise to 50 at% at the interfaces. In this method, the raw depth profiles were converted to compositional depth profiles through the two-step conversion process using the alloy reference relative sensitivity factors (AR-RSF) determined by the alloy reference films with well-known compositions determined by Rutherford backscattering spectroscopy (RBS). The interface locations of the Si/Ge and Si/Ti multilayer films were also determined from the intensities of the interfacial composited ions (SiGe+, SiTi+). The determination of the interface locations from the composited ions was found to be difficult to apply due to the small intensity and the unclear variation at the interfaces.

• The Korean Journal of Ceramics
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• v.1 no.1
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• pp.7-12
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• 1995

When a $Ta_O_5$ dielectric film is deposited on a bare silicon, the growth of $SiO_2$ at the $Ta_O_5$/Si interface cannot be avoided. Even though the $SiO_2$ layer is ultrathin (a few nm), it has great effects on the electrical properties of the capacitor. The concentration depth profiles of the ultrathin interfacial $SiO_2$ and $SiO_2/Si_3N_4$ layers were obtained using an Auger electron spectroscopy (AES) equipped with a cylindrical mirror analyzer (CMA). These AES depth profiles were quantitatively analyzed by comparing with the theoretical depth profiles which were obtained by considering the inelastic mean free path of Auger electrons and the angular acceptance function of CMA. The direct measurement of the interfacial layer thicknesses by using a high resolution cross-sectional TEM confirmed the accuracy of the AES depth analysis. The $SiO_2/Si_3N_4$ double layers, which were not distinguishable from each other under the TEM observation, could be effectively analyzed by the AES depth profiling technique.

• 한국지구물리탐사학회:학술대회논문집
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• 2008.10a
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• pp.79-84
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• 2008

Compared to conventional high resolution acoustic profiling, ultra high resolution shallow acoustic profiling is limited in penetration, yet it provides resolution suitable for detailed seabed investigation in the shallow waters. Possible applications include search of buried pipeline, ship wrecks, and other artificial objects through the detailed mapping of thickness and structure of the upper sedimentary layers. In this study, contaminated sediments were discriminated by the correlation of ultra high resolution profiles with geologic data. In addition, the burial depth of submarine cable was measured by the interpretation of acoustic anomalies in the profiles.

• Journal of the Korean Vacuum Society
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• v.5 no.1
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• pp.25-32
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• 1996

An ERD-TOF system is constructed for the nondestructive depth profiling of light elements in thin films in the range of several thousand angstroms. The particles, recoiled by 10 $MeV^{35}Cl$ projectiles, were detected by a Time-Of-Flight spectrometer composed of a MCP (Micro Channel Plate) and a SSB (Silicon Surface Barrier) detector. A two parameter data acquisition system composed of two PC's was constructed for registering simultaneous time and energy signals. A $Si_3N_4$/poly-Si/$SiO_2$/Si sample was anlayzed and the result is compared with RBS. The detection limit, maximum probable depth and depth resolution for light elements in silicon are about $4\times10^{14}atoms/\textrm{cm}^2$, 5, 000$\AA$ and 100$\AA$, respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.1
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• pp.19-23
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• 2003

Polished surface of $CsB_{3}O_{5}$ (CBO) has been observed by reflection high energy electron diffraction (RHEED) and X-ray photoelectron spectroscopy (XPS). For comparison, electronic properties of CBO powder have been studied by XPS. It has been found that the crystal surface is covered by thick amorphous layer with chemical composition closely related to that of CBO. Great enrichment of top surface by cesium, ~30 % in reference to the bulk of the modified layer, has been displayed by depth profiling.

• Proceedings of the PSK Conference
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• 2002.10a
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• pp.235.1-235.1
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• 2002

In previous study, we showed the feasibility of the in vivo use of portable near infrared system for the determination of human skin moisture. In order to optimize the acquiring condition of NIR spectrum of skin. skin depth profiling was investigated changing the distance and gap size between illumination and receiving of radiation in the terminal of fiber probe. The colleted light information could be controlled depending the distance and gap of fiber optic probe. (omitted)

• Proceedings of the Optical Society of Korea Conference
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• 2005.07a
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• pp.298-299
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• 2005

• Proceedings of the Optical Society of Korea Conference
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• 2008.02a
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• pp.331-332
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• 2008

• Journal of Korean Vacuum Science & Technology
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• v.6 no.1
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• pp.5-7
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• 2002

For quantitative N depth profiling, N profiles were measured in a～3 m Si oxynitride by low energy O$\sub$2+/sputtering and the result was calibrated with MEIS analysis of the N thickness and areal density. The quantitative depth profile of nitrogen showed the pileup of nitrogen atoms at the interface of ultrathin oxynitride films.