An ERD-TOF System for the Depth Profiling of Light Elements

경원소 적층 분석을 위한 탄성되튐-비행시간 측정시스템

  • Kim, Y. S. (Korea Institute of Geology, Mining and Materials) ;
  • Woo, H. J. (Korea Institute of Geology, Mining and Materials) ;
  • Kim, J. K. (Korea Institute of Geology, Mining and Materials) ;
  • Kim, D. K. (Korea Institute of Geology, Mining and Materials) ;
  • Choi, H. W. (Korea Institute of Geology, Mining and Materials) ;
  • Hong, W. (Korea Institute of Geology, Mining and Materials)
  • 김영석 (한국자원연구소, 방사화분석연구그룹) ;
  • 우형주 (한국자원연구소, 방사화분석연구그룹) ;
  • 김준곤 (한국자원연구소, 방사화분석연구그룹) ;
  • 김덕경 (한국자원연구소, 방사화분석연구그룹) ;
  • 최한우 (한국자원연구소, 방사화분석연구그룹) ;
  • 홍완 (한국자원연구소, 방사화분석연구그룹)
  • Published : 1996.03.01

Abstract

An ERD-TOF system is constructed for the nondestructive depth profiling of light elements in thin films in the range of several thousand angstroms. The particles, recoiled by 10 $MeV^{35}Cl$ projectiles, were detected by a Time-Of-Flight spectrometer composed of a MCP (Micro Channel Plate) and a SSB (Silicon Surface Barrier) detector. A two parameter data acquisition system composed of two PC's was constructed for registering simultaneous time and energy signals. A $Si_3N_4$/poly-Si/$SiO_2$/Si sample was anlayzed and the result is compared with RBS. The detection limit, maximum probable depth and depth resolution for light elements in silicon are about $4\times10^{14}atoms/\textrm{cm}^2$, 5, 000$\AA$ and 100$\AA$, respectively.

Keywords

References

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