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Structure and chemical composition of $CsB_{3}O_{5}$ (CBO) optical surface  

V.V. Atuchin (Institute of Semiconductor Physics)
V.G. Kesler (Institute of Semiconductor Physics)
L.D. Pokrovsky (Institute of Semiconductor Physics)
N. Yu. Maklakova (Institute of Mineralogy and Petrography)
M. Yoshimura (Department of Electrical Engineering, Osaka university)
N. Ushiyama (Department of Electrical Engineering, Osaka university)
T. Matsui (Department of Electrical Engineering, Osaka university)
K. Kamimura (Department of Electrical Engineering, Osaka university)
Y. Mori (Department of Electrical Engineering, Osaka university)
T. Sasaki (Department of Electrical Engineering, Osaka university)
Publication Information
Journal of the Korean Crystal Growth and Crystal Technology / v.13, no.1, 2003 , pp. 19-23 More about this Journal
Abstract
Polished surface of $CsB_{3}O_{5}$ (CBO) has been observed by reflection high energy electron diffraction (RHEED) and X-ray photoelectron spectroscopy (XPS). For comparison, electronic properties of CBO powder have been studied by XPS. It has been found that the crystal surface is covered by thick amorphous layer with chemical composition closely related to that of CBO. Great enrichment of top surface by cesium, ~30 % in reference to the bulk of the modified layer, has been displayed by depth profiling.
Keywords
Cesium triborate; Surface; XPS; RHEED; Depth profiling;
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