• Korean Journal of Optics and Photonics
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• v.17 no.5
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• pp.437-446
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• 2006

A fabrication method fur high-aspect-ratio microchannels in stainless steel using laser-assisted thermochemical wet etching is reported in this paper. The fabrication of deep microchannels with an aspect ratio over ten is realized by applying a multiple etching process with an optimization of process conditions. The cross-sectional profile of the microchannels can be adjusted between rectangular and triangular shapes by properly controlling laser power and etchant concentration. Excellent dimensional uniformity is achieved among the channels with little heat-affected area. Microchannels with a width ranging from 15 to $50{\mu}m$ can be fabricated with an aspect ratio of ten and a pitch of 150 m or smaller. The effects of process variables such as laser power, scan speed, and etchant concentration on the fabrication results, including etch width, depth, and cross-sectional profile are closely examined.

• Journal of the Korean institute of surface engineering
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• v.56 no.2
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• pp.160-168
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• 2023

Recently, investigation on metallization is a key for a stretchable display. Amorphous metal such as Ni and Zr based amorphous metal compounds are introduced for a suitable material with superelastic property under certain stress condition. However, Ni and Zr based amorphous metals have too high resistivity for a display device's interconnectors. In addition, these metals are not suitable for display process chemicals. Therefore, we choose an aluminum based amprhous metal Al-Mo as a interconnector of stretchable display. In this paper, Amorphous Forming Composition Range (AFCR) for Al-Mo alloys are calculated by Midema's model, which is between 0.1 and 0.25 molybdenum, as confirmed by X-ray diffraction (XRD). The elongation tests revealed that amorphous Al-20Mo alloy thin films exhibit superior stretchability compared to pure Al thin films, with significantly less increase in resistivity at a 10% strain. This excellent resistance to hillock formation in the Al20Mo alloy is attributed to the recessed diffusion of aluminum atoms in the amorphous phase, rather than in the crystalline phase, as well as stress distribution and relaxation in the aluminum alloy. Furthermore, according to the AES depth profile analysis, the amorphous Al-Mo alloys are completely compatible with existing etching processes. The alloys exhibit fast etch rates, with a reasonable oxide layer thickness of 10 nm, and there is no diffusion of oxides in the matrix. This compatibility with existing etching processes is an important advantage for the industrial production of stretchable displays.

• Proceedings of the KIEE Conference
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• 1998.07g
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• pp.2518-2520
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• 1998

Silicon can be reactive ion etched (RIE) either isotropically or anisotropically. In this paper, a new micromachining technology combining these two etching characteristics is proposed. In the proposed method, the fabrication steps are as follows. First. a polysilicon layer, which is used as the bottom electrode, is deposited on the silicon wafer and patterned. Then the silicon substrate is etched anisotropically to a few micrometer depth that forms a cavity. Then an PECVD oxide layer is deposited to passivate the cavity side walls. The oxide layers at the top and bottom faces are removed while the passivation layers of the side walls are left. Then the substrate is etched again but in an isotropic etch condition to form a round trench with a larger radius than the anisotropic cavity. Then a sacrificial PECVD oxide layer is deposited and patterned. Then a polysilicon structural layer is deposited and patterned. This polysilicon layer forms a pivot structure of a rocker-arm. Finally, oxide sacrificial layers are etched away. This new micromachining technology is quite simpler than conventional method to fabricate joint structures, and the devices that are fabricated using this technology do not require a flexing structure for motion.

• Analytical Science and Technology
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• v.22 no.3
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• pp.247-253
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• 2009

Porous silicon films are electrochemically etched from crystalline silicon wafers in an aqueous solution of hydrofluoric acid(HF). Careful control of etching conditions (current density, etch time, HF concentration) provides films with precise, reproducible physical parameters (morphology, porosity and thickness). The etched pattern could be varied due to (1) current density controls pore size (2) etching time determines depth and (3) complex layered structures can be made using different current profiles (square wave, triangle, sinusoidal etc.). The optical interference spectrum from Fabry-Perot layer has been used for forensic applications, where changes in the optical reflectivity spectrum confirm the identity. We will explore a method of identifying the specific pattern code and can be used for identities of individual code with porous silicon based encoded nanosized smart particles.

• The Journal of Korean Academy of Prosthodontics
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• v.41 no.3
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• pp.319-324
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• 2003

Statement of problem. Adhesives in dentistry playa major role in the success of restorative treatments. In the treatment of all ceramic restoration it is needed to find the adequate bond strength between enamel and dentin. Purpose. The purpose of this study was to evaluate shear bond strength of resin cement bonded to extracted human uncut enamel, cut enamel, and dentin in vitro. Material and methods. Ten freshly extracted anterior teeth without any previous restorative treatments were chosen. The extracted teeth were embedded in PMMA cold acrylic in the shape of a cylinder, 25 mm in diameter by 25 mm in height. The bonding system used was as follow: Uni-Etch (32% phosphoric acid), One-Step adhesive, Duolink resin cement. The specimens were acid etched and rinsed with water. Two layers of One-Step adhesive were coated with a disposable brush on the uncut enamel. VIP curing light at $500mV/cm^2$ was used to cure the adhesive. For cut enamel shear bond test, the specimen used for uncut enamel was further reduced approximately $0.3{\sim}0.5mm$ using a laminate preparation diamond bur (0.3 mm in depth). The specimens were subsequently treated with 320-grit SiC paper followed by 600-grit SiC paper and cleaned with distilled water. The bonding procedure on the cut enamel was same as uncut enamel bonding procedure. For dentin bonding test, the specimen used for cut enamel was further reduced approximately $0.5mm{\sim}1.0mm$ using a laminate preparation diamond bur (0.5 mm in depth of diamond cutting). The amount of reduction was evaluated with the silicone mold. The specimens were subsequently treated with 320-grit SiC paper followed by 600-grit silicon carbon paper and cleaned in distilled water. The bonding procedure on the dentin was same as uncut enamel bonding procedure. All samples were mounted and secured on the Ultradent shear bond test sample holder, and Ultradent restricted shear bond testing device was used with Universal Instron machine until fracture. Analysis of variance (ANOVA) test was performed comparing the result at P<0.05. Multiple comparison (Tukey) was used to compare each groups. Result. The result showed that the mean value in shear bond strength of resin cement bonded to uncut enamel, cut enamel and dentin were 27.04 Mpa, 30.25 Mpa and 26.39 Mpa with respect. Conclusion. Within the limitation of this study, the mean value of the shear bond strength of cut enamel was higher than those of uncut enamel or dentin. However there existed no statistical differences between three different human dentition substrates due to increased adhesive characteristics.

• Journal of the korean academy of Pediatric Dentistry
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• v.36 no.1
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• pp.30-37
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• 2009

Early enamel caries is commonly remineralized by the patient‘s improved oral hygiene or fluoridation, however the result is clinically unreliable. As an alternative, we tried to seal the lesions with low-viscosity light-curing resin. The aim of the present study was to search the proper methods of the adequate pretreatment prior to applying adhesive resin on natural proximal caries lesions. Thirty nine extracted deciduous molar teeth showing proximal early caries lesion were used for this study. They were divided into 5 groups : Group 1; only carefully cleaned with water, group 2; etched with 15% HCl for 15s, group 3; etched with 35% phosphoric acid for 15s, group 4; etched with 35% phosphoric acid for 30s, and group 5; cleaned with 0.5% NaOCl. Following results were obtained by evaluating with SEM and CLSM after applied with adhesive resin. 1. As a result of SEM evaluation, group 2 showed clearly removed surface layer, group 3,4 showed partially removed surface layer irregularly, group 5 showed slightly removed surface layer. 2. Group 2 showed the deepest infiltration depth, followed by group 4, group 3, group 5, group 1 and besides group 5, other groups showed significantly deep infiltration depth. (p < 0.01) In conclusion, the best methods of the adequate pretreatment on natural proximal caries lesion for deep infiltration of adhesive resin was to etch with 15% HCl for 15s.

• Restorative Dentistry and Endodontics
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• v.18 no.1
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• pp.1-26
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• 1993

The purpose of this study was to investigate the effect of acid etching on the surface appearance and fracture toughness of five glass ionomer cements. Five kinds of commercially available glass ionomer cements including chemical curing filling type, chemical curing lining type, chemical curing metal reinforced type, light curing tilling type and light curing lining type were used for this study. The specimens for SEM study were fabricated by treating each glass ionomer cement with either visible light curing or self curing after being inserted into a rubber mold (diameter 4mm, depth 1mm). Some of the specimens were etched with 37% phosphoric acid for 0, 15, 30, 60, go seconds, at 5 minutes, 1 hour and 1 day after mixing of powder and liquid. Unetched ones comprised the control group and the others were the experimental groups. The surface texture was examined by using scanning electron microscope at 20 kV. (S-2300, Hitachi Co., Japan). The specimens for fracture toughness were fabricated by curing of each glass ionomer cement previously inserted into a metal mold for the single edge notch specimen according to the ASTME399. They were subjected to a three-point bend test after etching for 0, 30, 60, and 90 seconds at 5 minutes-, 1 hour-and 1 day-lapse after the fabrication of the specimens. The plane strain fracture toughness ($K_{IC}$) was determined by three-point bend test which was conducted with cross-head speed of 0.5 mm/min using Instron universal testing machine (Model No. 1122) following seven days storage of the etched specimens under $37^{\circ}C$, 100% humidity condition. Following conclusions were drawn. 1. In unetched control group, crack was present, but the surface was generally smooth. 2. Deterioration of the surface appearance such as serious dissolving of gel matrix and loss of glass particles occured as the etching time was increased beyond 15 s following Immediate etching of chemical curing type of glass ionomer cements. 3. Etching after 1 h, and 1 d reduced surface damage, 15 s, and 30s etch gave rough surface appearance without loss of glass particle of chemical curing type of glass ionomer cements. 4. Light curing type glass ionomer cement was etched by acid, but there was no difference in surface appearances according to various waiting periods. 5. It was found that the value of plane stram fracture toughness of glass ionomer cements was highest in the light curing filling type as $1.79\;MNm^{-1.5}$ followed by the light curing lining type, chemical curing metal reinforced type, chemical curing filling type and chemical curing lining type. 6. The value of plane stram fracture toughness of the chemical curing lining type glass ionomer cement etched after 5 minutes was lower than those of the cement etched after 1 hour or day or unetched (P < 0.05). 7. Light curing glass ionomer cement showed Irregular fractured surface and chemical curing cement showed smooth fractured surface.

• Korean Journal of Materials Research
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• v.3 no.2
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• pp.121-130
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• 1993

The GaP crystals were grown by synthesis solute diffusion method and its properties were investigated. High quality single crystals were obtained by pull-down the crystal growing ampoule with velocity of 1.75mm/day. Etch pits density along vertical direction of ingot was increased from 3.8 ${\times}{10^4}$c$m^{-2}$ of the first freeze to 2.3 ${\times}{10^5}$c$m^2$ of the last freeze part. The carrier concentration and mobilities at room temperature were measured to 197.49cc$m^2$/V.sec and 6.75 ${\times}{10^{15}}$c$m^{-3]$, respectively. The temperature dependence of optical energy gap was empirically fitted to $E_g$(T)=[2.3383-(6.082${\times}{10^{-4}}$)$T^2$/(373. 096+TJeV. Photoluminescence spectra measured at low temperature were consist with sharp line-spectra near band-gap energy due to bound-exciton and phonon participation in band edge recombination process. Zn-diffusion depth in GaP was increased with square root of diffusion time and temperature dependence of diffusion coefficient was D(Tl = 3.2 ${\times}{10^3}$exp( - 3.486/$k_{\theta}$T)c$m^2$/sec. Electroluminescence spectra of p-n GaP homojunction diode are consisted with emission at 630nm due to recombination of donor in Zn-O complex center with shallow acceptors and near band edge emission at 550nm. Photon emission at current injection level of lower than 100m A was due to the band-filling mechanism.

• Journal of the Microelectronics and Packaging Society
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• v.19 no.1
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• pp.39-45
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• 2012

Three-dimensional integrated circuit(3D IC) technology has become increasingly important due to the demand for high system performance and functionality. In this work, BOE and HF wet etching of Cu line surfaces after CMP were conducted for Cu-Cu pattern direct bonding. Step height of Cu and $SiO_2$ as well as Cu dishing after Cu CMP were analyzed by the 3D-Profiler. Step height increased and Cu dishing decreased with increasing BOE and HF wet etching times. XPS analysis of Cu surface revealed that Cu surface oxide layer was partially removed by BOE and HF wet etching treatment. BOE treatment showed not only the effective $SiO_2$ etching but also reduced dishing and Cu surface oxide rather than HF treatment, which can be used as an meaningful process data for reliable Cu-Cu pattern bonding characteristics.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.15 no.3
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• pp.124-127
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• 2005

It is demonstrated that the annealing process for Ti in-diffusion to z-cut $LiNbO_3$ at temperature lower than the curie temperature in a platinum (Pt) box can cause a ferroelectric micro-domain inversion at the +z surface and Li out-diffusion, therefore which should be avoided or suppressed for waveguide type periodically poled lithium niobate (PPLN) devices. The depth of the inversion layer depends on the Ti-diffusion conditions such as temperature, atmosphere, the sealing method of $LiNbO_3$ in the Pt box and crystal orientation is experimentally examined. The result shows that the polarization-inverted domain boundary appears at the only +z surface and its thickness is about $1.6{\mu}m$. Also, for the etched $LiNbO_3$, surface the domain shape was observed by the optical microscope and atomic force microscopy (AEM), and distribution of the cation concentrations in the $LiNbO_3$ crystal by the secondary ion mass spectrometry (SIMS).