• Journal of the Korean Electrochemical Society
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• v.12 no.3
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• pp.258-262
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• 2009

The composition and semiconducting properties of the passive films formed on Ni- (15, 30)Cr-5Mo alloys in pH 8.5 buffer solution were examined. The depth concentration profile of passive films formed on Ni-(15, 30)Cr-5Mo in pH 8.5 buffer solution showed that Mo enhances the enrichment of Cr. The Mott-Schottky plot for the passive film on Ni-(15, 30)Cr- 5Mo closely resembled that for the film on Cr, whereas those for the less Cr-enriched film on Mo-free alloys showed similar behavior to that for the film on Ni. The acceptor density was reduced by increasing Cr content in Ni-(15, 30)Cr-(0, 5)Mo alloys, but addition of Mo considerably increased the acceptor density.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.2
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• pp.125-130
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• 2000

Two step growth of reduced pressure chemical vapor eposition has been successfully developed to achieve in-situ phosphorus-doped silicon epilayers, and the characteristic evolution on their microstructures has been investigated using scanning electron microscopy, transmission electron microscopy, and secondary ion mass spectroscopy. The two step growth, which employs heavily in-situ P doped silicon buffer layer grown at low temperature, proposes crucial advantages in manipulating crystal structures of in-situ phosphorus doped silicon. In particular, our experimental results showed that with annealing of the heavily P doped silicon buffer layers, high-quality epitaxial silicon layers grew on it. the heavily doped phosphorus in buffer layers introduces into native oxide and plays an important role in promoting the dispersion of native oxides. Furthermore, the phosphorus doping concentration remains uniform depth distribution in high quality single crystalline Si films obtained by the two step growth.

• Journal of Environmental Impact Assessment
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• v.17 no.1
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• pp.1-9
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• 2008

Non-point pollution is caused by many diffusive sources, unlike a point pollution derived from industrial wastewater treatment plants or sewage treatment plants. Runoff of non-point pollutants is originated from rainfall or thawing in short period of time moving over and through the a ground surface. They cause ill effect on the quality of neighboring aquatic environment. To prevent effectively the wash off from non-point pollutant, it should be immediately reduced at the source or be treated after gathering of runoff water. This study has been carried out for the best width of riparian buffer zone. So we implemented the experiment in terms of its depth, width and kind of vegetations and calculated the reduction of pollutants loading. The experimental zone encompasses the watershed of Namhan River (Kyunggido Yangpyunggun Byungsanri). The region was divided into 5 land cover sectors : grass, reed, pussy willow, mixed(grass+pussy willow) and natural zone to compare effectiveness of vegetation. Water samples from four points have been collected in different depths. And the pollutant removal efficiency by sectors with different plant species was yielded through influent with one of each sample. And we obtained the correlation between the width of riparian buffer zone and the removal efficiency of pollutants. Using correlation result, the width of riparian buffer zones which needs to improve the water quality of river could be derived.

• ETRI Journal
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• v.38 no.2
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• pp.265-271
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• 2016

We analyzed the interface characteristics of Zn-based thin-film buffer layers formed by a sulfur thermal cracker on a $Cu(In,Ga)Se_2$ (CIGS) light-absorber layer. The analyzed Zn-based thin-film buffer layers are processed by a proposed method comprising two processes - Zn-sputtering and cracker-sulfurization. The processed buffer layers are then suitable to be used in the fabrication of highly efficient CIGS solar cells. Among the various Zn-based film thicknesses, an 8 nm-thick Zn-based film shows the highest power conversion efficiency for a solar cell. The band alignment of the buffer/CIGS was investigated by measuring the band-gap energies and valence band levels across the depth direction. The conduction band difference between the near surface and interface in the buffer layer enables an efficient electron transport across the junction. We found the origin of the energy band structure by observing the chemical states. The fabricated buffer/CIGS layers have a structurally and chemically distinct interface with little elemental inter-diffusion.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.319-320
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• 2009

In this study, high-quality Al-N doped p-type ZnO thin films were deposited on n-type Si (100) wafer or Si coated with buffer layer by DC magnetron sputtering in the mixture of $N_2$ and $O_2$ gas. The target was ceramic ZnO mixed with $Al_2O_3$ (2 wt%). The p-type ZnO thin film showed higher carrier concentration $2.93\times10^{17}cm^{-3}$, lower resistivity of $5.349\;{\Omega}cm$ and mobility of $3.99\;cm^2V^{-1}S^{-1}$, respectively. According to PL spectrum, the Al donor energy level depth ($E_d$) of Al-N codoped p-type ZnO film was reduced to about 51 meV, and the N acceptor energy level depth ($E_a$) was reduced to 63 meV, respectively.

• 전자공학회논문지 IE
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• v.46 no.1
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• pp.37-43
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• 2009

In this paper, we propose a new algorithm for 3D model retrieval based on spherical coordinate system. We obtains sample points in a polygons on 3D model. We convert a point in cartesian coordinates(x, y, z) to it in spherical coordinate. 3D shape features are achieved by adopting distribution of zenith of sample point in spherical coordinate. We used Osada's method for obtaining sample points on 3D model and the PCA method for the pose standardization 3D model. Princeton university's benchmark data was used for this research. Experimental results numerically show the precision improvement of proposed algorithm 12.6% in comparison with Vranic's depth buffer-based feature vector algorithm.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.4
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• pp.208-211
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• 2018

This paper details the design of a 1,200 V class trench gate field stop IGBT (insulated gate bipolar transistor) with a nano gate structure smaller than 1 um. Decreasing the size is important for lowering the cost and increasing the efficiency of power devices because they are high-voltage switching devices, unlike memory devices. Therefore, in this paper, we used a 2-D device and process simulations to maintain a gate width of less than 1 um, and carried out experiments to determine design and process parameters to optimize the core electrical characteristics, such as breakdown voltage and on-state voltage drop. As a result of these experiments, we obtained a wafer resistivity of $45{\Omega}{\cdot}cm$, a drift layer depth of more than 180 um, an N+ buffer resistivity of 0.08, and an N+ buffer thickness of 0.5 um, which are important for maintaining 1,200 V class IGBTs. Specially, it is more important to optimize the resistivity of the wafer than the depth of the drift layer to maintain a high breakdown voltage for these devices.

• Proceedings of the Korean Geotechical Society Conference
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• 2010.03a
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• pp.305-313
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• 2010

HDPE smooth and textured GMs were cut into dumbbell shape and notched where depth of the notch produced a ligament thickness of 90% to 10% of the nominal thickness of the specimen at 10% interval. Yield stress and elongation were measured of those samples and plotted on Graph. Yield stress and elongation at yield point decreases gradually as the notch depth is increased. Both installations damaged and notched GMs were used to understand stress crack behavior. Intact sample were notched in such a manner that the depth of notch produced a ligament thickness of 80% of the nominal thickness of the specimen. Installation damaged samples were not notched. Stress Crack Resistance behavior was observed using NCTL Test at $50{\pm}1^{\circ}C$ at different yield stresses immerging with pH 4 and pH 12 buffer solutions. Significant difference was observed in both cases.

• JSTS:Journal of Semiconductor Technology and Science
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• v.3 no.4
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• pp.175-180
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• 2003

In this paper, we present a new method for early depth test for a 3D rendering engine. We add a filter stage to the rasterizer in the 3D rendering engine, in an attempt to identify and avoid the occluded pixels. This filtering block determines if a pixel is hidden by a certain plane. If a pixel is hidden by the plane, it can be removed. The simulation results show that the filter reduces the number of pixels to the next stage up to 71.7%. As a result, 67% of memory bandwidth is saved with simple extra hardware.

• Tunnel and Underground Space
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• v.24 no.4
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• pp.316-324
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• 2014

In the underground 500 m depth, the high level radioactive waste disposal system is made by boring the tunnel in the base rock and putting the high level waste disposal canister that is the surrounding form with the buffer material. According to the many statistics, it is the tendency that the earthquake increases in the Korean peninsula every year. In case that the earthquake is generated, the disposal canister in the rock mass can be broken due to the shearing force in the underground. Furthermore, a major environmental problems can be caused by the radioactive harmful substances. In this study, the earthquake-proof type buffer material was developed with the protection method safely on the earthquake. The main parameter having an effect on the earthquake-resistant performance was analyzed and the earthquake-proof type buffer material was designed. The shear analysis model was developed and the performance of the earthquake-proof type buffer material was evaluated by using ABAQUS.