• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.330-333
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• 2002

The substrate temperature is an important parameter in thin film deposition process. In this paper the effects of the substrate temperature on the properties of CuIn0.75Ga0.25Se2(CIGS) thin films are reported. Structure, surface morphology and optical properties of CIGS thin films deposited at various substrate temperatures have been investigated using a number of analysis techniques. X-ray diffraction (XRD) analysis shows that CIGS films exhibit a strong <112> preferred orientation. As expected, at higher substrate temperatures the films displayed a higher degree of crystallinity. The <112> peak was also enhanced and other CIGS peaks appeared simultaneously These results were supported by experimental work using Raman spectroscopy. The Raman spectra of the as-grown CIGS thin films show only the Al mode peak. The intensity of this peak was enhanced at higher deposition temperatures. Scanning electron microscopy (SEM) results revealed very small grains in films fabricated at 48$0^{\circ}C$ substrate temperature. When the substrate temperature was increased the average grain size also increased together with a reduction in the number and size of the voids. The deposition temperature also had a significant influence on the transmission spectra.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05a
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• pp.153-157
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• 2002

This paper deals with the relationships between MgO manufacturing condition and misfiring at low temperature. The characteristics of MgO are affected by substrate temperature and MgO deposition current. In this study. the. substrate temperature was varied from $100^{\circ}C$ to $200^{\circ}C$. And the MgO deposition current was varied from 5mA to 20mA. As a result. the misfiring at low temperature was decreased in the panels with substrate temperature $200^{\circ}C$ and MgO deposition current 5mA. These results may be explained that the higher substrate temperature and lower MgO deposition current makes the denser film formation.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.248-248
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• 2012

Synthesis graphene on Cu substrate by plasma-enhanced chemical vapor deposition (PE-CVD) is investigated and its quality's affection factors are discussed in this work. Compared with the graphene synthesized at high temperature in chemical vapor deposition (CVD), the low-temperature graphene film by PE-CVD has relatively low quality with many defects. However, the advantage of low-temperature is also obvious that low melting point materials will be available to synthesize graphene as substrate. In this study, the temperature will be kept constant in $400^{\circ}C$ and the graphene was grown in plasma environment with changing the plasma power, the flow rate of precursors, and the distance between plasma generator coil and substrates. Then, we investigate the effect of temperature and the influence of process variables to graphene film's quality and characterize the film properties with Raman spectroscopy and sheet resistance and optical emission spectroscopy.

• Applied Science and Convergence Technology
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• v.24 no.6
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• pp.262-267
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• 2015

We demonstrate the growth of single-walled carbon nanotubes (SWNTs) using ethylene-based chemical vapor deposition (CVD) and ferritin-induced catalytic particles toward growth temperature reduction. We first optimized the gas composition of $H_2$ and $C_2H_4$ at 500 and 30 sccm, respectively. On a planar $SiO_2$ substrate, high density SWNTs were grown at a minimum temperature of $760^{\circ}C$. In the case of growth using nanoporous templates, many suspended SWNTs were also observed from the samples grown at $760^{\circ}C$; low values of $I_D/I_G$ in the Raman spectra were also obtained. This means that the temperature of $760^{\circ}C$ is sufficient for SWNT growth in ethylene-based CVD and that ethylene is more effective that methane for low temperature growth. Our results provide a recipe for low temperature growth of SWNT; such growth is crucial for SWNT-based applications.

• Journal of the Korean Vacuum Society
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• v.12 no.1
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• pp.35-39
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• 2003

Using RF plasma enhanced chemical vapor deposition, amorphous carbon films were grown in pure methane plasma. Field electron emission of these films were examined at a function of deposition temperature. It was found that the electron emission current of the sample prepared at deposition temperature above $600^{\circ}C$ was considerably improved. The film grown at deposition temperature of $800^{\circ}C$ had the best threshold field of 8 V/$\mu\textrm{m}$ in this experiment. According to the results of Raman spectroscopy. growth of graphite crystallites was promoted with higher deposition temperatures. Moreover the surface morphology was abruptly changed at deposition temperature above $600^{\circ}C$. We discuss the field electron emission characteristics of amorphous carbon films with regard to the structural feature and surface morphology.

• Korean Journal of Materials Research
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• v.9 no.2
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• pp.155-162
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• 1999

Zirconia thin films of uniform structure were fabricated by plasma-enhanced metal-organic chemical vapor deposition. Deposition conditions such as substrate temperature were observed to have much influence on the formation of zirconia films, therefore the mechanism of decomposition of $Zr[TMHD]_4$precursor and film growth were examined by XRD, FT-IR etc., as well as the determination of the optimal deposition condition. From temperature dependence on zirconia, below the deposition temperature of 523K, the amorphous zirconia was formed while the crystalline of zirconia with preferred orientation of cubic (200) was obtained above the temperature. Deposits at low temperatures were investigated by FT-IR and the absorption band of films revealed that the zirconia thin film was in amorphous structure and has the same organic band as that of Zr precursor. In case of high temperature, it was found that Zr precursor was completely decomposed and crystalline zirconia was obtained. In addition, at 623K the higher RF power yielded the increased crystallinity of zirconia implying an increase in decomposition rate of precursor. However, it seems that RF power has nothing with the zirconia deposition process at 773K. It was found that the proper bubbler temperature of TEX>$Zr[TMHD]<_4$ precursor is needed along with high flow rate of carrier gas. Through AFM analysis it was determined that the growth mechanism of the zirconia thin film showed island model.

• Korean Journal of Materials Research
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• v.29 no.9
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• pp.567-577
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• 2019

Aluminum nitride (AlN) has versatile and intriguing properties, such as wide direct bandgap, high thermal conductivity, good thermal and chemical stability, and various functionalities. Due to these properties, AlN thin films have been applied in various fields. However, AlN thin films are usually deposited by high temperature processes like chemical vapor deposition. To further enlarge the application of AlN films, atomic layer deposition (ALD) has been studied as a method of AlN thin film deposition at low temperature. In this mini review paper, we summarize the results of recent studies on AlN film grown by thermal and plasma enhanced ALD in terms of processing temperature, precursor type, reactant gas, and plasma source. Thermal ALD can grow AlN thin films at a wafer temperature of $150{\sim}550^{\circ}C$ with alkyl/amine or chloride precursors. Due to the low reactivity with $NH_3$ reactant gas, relatively high growth temperature and narrow window are reported. On the other hand, PEALD has an advantage of low temperature process, while crystallinity and defect level in the film are dependent on the plasma source. Lastly, we also introduce examples of application of ALD-grown AlN films in electronics.

• Journal of the Korean Magnetics Society
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• v.12 no.6
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• pp.224-230
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• 2002

The statistical experiment method is employed to optimize the deposition condition of Co film with DC magnetron sputtering process. The statistical treatment results showed the significance value below 0.05, low RMS error and R-sq value close to 1, which implied that our experiment and design were very reliable. We found that the sheet resistance decreased to -1.83Ω/$\square$ with the deposition temperature, increased to 11.17Ω/$\square$ with the deposition pressure, and decreased into -0.65Ω/$\square$ with the DC power. We also confirmed that the sheet resistance uniformity was mainly influenced by the deposition temperature as it decreased -4.04％ at the temperature range of 25$\^{C}$∼147$\^{C}$. Finally, we report that the optimum condition of Co film using our statistical method of design of experiment is the deposition temperature of 25$\^{C}$, the deposition pressure of 12mTorr, and the DC power of 1500W.

• Korean Journal of Materials Research
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• v.18 no.8
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• pp.406-410
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• 2008

The properties of pyrolytic carbon (PyC) deposited from $C_2H_2$ and a mixture of $C_2H_2/C_3H_6$ on $ZrO_2$ particles in a fluidized bed reactor were studied by adjusting the deposition temperature, reactant concentration, and the total gas flow rate. The effect of the deposition parameters on the properties of PyC was investigated by analyzing the microstructure and density change. The density could be varied from $1.0\;g/cm^3$ to $2.2\;g/cm^3$ by controlling the deposition parameters. The density decreased and the deposition rate increased as the deposition temperature and reactant concentration increased. The PyC density was largely dependent on the deposition rate irrespective of the type of the reactant gas used.

• Journal of the Korean Society for Precision Engineering
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• v.22 no.3 s.168
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• pp.187-193
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• 2005

The temperature distribution of the deposited droplet was predicted by using the finite element analysis and it was assumed that the droplet was axisymmetrical model. The analysis of residual stress was performed with the temperature data, which is obtained from the result. Axisymmetric droplet is deposited three times to consider the actual phenomenon of droplet deposition. The analysis of the temperature distribution is respectively performed whenever the axisymmetric droplet is laminated and the residual stresses of the laminated axisymmetric droplet are calculated with the value of the temperature distribution.