• 한국재료학회지
• /
• 제27권2호
• /
• pp.69-75
• /
• 2017

To establish low-temperature process conditions, process-property correlation has been investigated for Ga-doped ZnO (GZO) thin films deposited by pulsed DC magnetron sputtering. Thickness of GZO films and deposition temperature were varied from 50 to 500 nm and from room temperature to $250^{\circ}C$, respectively. Electrical properties of the GZO films initially improved with increase of temperature to $150^{\circ}C$, but deteriorated subsequently with further increase of the temperature. At lower temperatures, the electrical properties improved with increasing thickness; however, at higher temperatures, increasing thickness resulted in deteriorated electrical properties. Such changes in electrical properties were correlated to the microstructural evolution, which is dependent on the deposition temperature and the film thickness. While the GZO films had c-axis preferred orientation due to preferred nucleation, structural disordering with increasing deposition temperature and film thickness promoted grain growth with a-axis orientation. Consequently, it was possible to obtain a good electrical property at relatively low deposition temperature with small thickness.

• 한국재료학회지
• /
• 제15권11호
• /
• pp.741-744
• /
• 2005

Atomic layer deposition (ALD) is a very promising deposition technique for ZnO thin films. However, there have been very few reports on ZnO grown by ALD. Effects of substrate temperature in both ALD and post annealing on the microstructure and PL properties of ZnO thin films were investigated using X-ray diffraction, photoluminescence, and scanning electron microscopy. The temperature window of ALD is found to be between $130-180^{\circ}C$. The growth rate of ZnO thin film increases as the substrate temperature increases in the temperature range except the temperature window. The crystal quality depends most strongly on the substrate temperature among all the growth parameters of ALD. The crystallinity of the film is improved by increasing the growth thine per ALD cycle or doing post-annealing treatment. The grain size of the film tends to increase and the grain shape tends to change from a worm-like longish shape to a round one as the annealing temperature increases from $600^{\circ}C\;to\;1,000^{\circ}C$.

• 한국재료학회지
• /
• 제9권12호
• /
• pp.1211-1215
• /
• 1999

a-C:F 박막은 $C_2F_6$와 $CH_4$를 원료 가스로 하여 증착온도를 상온에서 300$^{\circ}C$까지 변화시켜가면서 ECRCVD 방법으로 증착하였다. 기판과 a-C:F 막 사이의 밀착력 향상을 위해 약 500$^{\AA}C$두께의 DLC 박막을 기판 위에 증착하였다. 증착 온도에 따라 형성된 a-C:F 박막의 증착률, 화학적 결합상태, 결합구조와 원소의 조성비 등을 FTIR, XPS, AFM, 그리고 C-V측정으로부터 분석하였다. 증착 속도와 불소의 함량은 증착온도가 증가할수록 감소하였다. 불소의 상대원자비는 상온에서 증착한 경우 53.9at.%였으며, 300$^{\circ}C$에서 증착한 경우 41.0at.%로 감소하였다. 유전 상수는 증착온도가 상온에서 300$^{\circ}C$까지 증가함에 따라 2.45에서 2.71까지 상승하였다. 증착온도가 증가함으로써 막의 수축은 줄어들었으며 이는 높은 증착온도에서 막의 crosslinking 구조가 증가되었기 때문이다.

• 산업기술연구
• /
• 제16권
• /
• pp.157-168
• /
• 1996

The deposition characteristics of ultrafine $SiO_2$ particles were investigated in a tube furnace reactor theoretically and experimentally controlling tube wall temperature in deposition zone. The model equations such as mass and energy balance equations and aerosol dynamic equations inside reactor and deposition tube were solved to predict the particle growth and deposition. The particle size and deposition efficiencies of $SiO_2$ particles were calculated, changing the process conditions such as tube furnace setting temperature, total gas flow rate inlet $SiCl_4$ concentration and were compared with the experimental results.

• 전자공학회논문지A
• /
• 제30A권12호
• /
• pp.69-76
• /
• 1993

The statistical methodology using RSM (response surface method) was used too ptimize the deposition conditions of selective CVD tungsten process for improving the deposition rate and the adhesion property. Temperature, flow rate of SiH$_4$ and WF$_6$ and H$_2$ and Ar carrier gases were chosen for the deposition variables and process characteristics due to carrier gas were intensively investigated. It was observed that temperature was the main factor influencingthe deposition rate in the case of H$_2$ carrier gas while the reactant ratio, $SiH_{4}/WF_{6}$, had the principal effect on the deposition rate in the case of Ar carrier gas. The increased deposition rate and the good adhesion to Si were obtained under Ar carrier gas compared to H$_2$ carrier gas. The optimum conditions for deposition rate and antipeeling property were found to be the temperature range of 300~32$0^{\circ}C$ and the reactant ratio, $SiH_{4}/WF_{6}$, of 0.5~0.6.

• Applied Science and Convergence Technology
• /
• 제26권6호
• /
• pp.184-188
• /
• 2017

Polymer deposition pattern on the ceramic lid surface is analyzed by numerical modeling. Assumption was made that is affected by gas flow pattern from the horizontal and vertical nozzles, temperature profile from the finger-like branches made of graphite and electrostatic potential effect. Calculated results showed gas flow dynamics is less relevant than two others. Temperature and electrostatic effects are likely determining the polymer deposition pattern based on our numerical simulation results.

• 한국재료학회지
• /
• 제9권2호
• /
• pp.144-148
• /
• 1999

We have studied the deposition characteristics of thick silicon dioxide film on Si substrate by $O_3$/TEOS APCVD(Atmospheric Pressure Chemical Vapor Deposition). The effect of deposition parameters such as the distance between showerhead and substrate, deposition temperature, TEOS flow rate and $O_3$/TEOS ratio on deposition rate, surface morphology, and properties of films as investigated. As deposition temperature increased, deposition rate decreased but the surface morphology and adhesion of film to substrate improved. As the distance between showerhead and substrate decreased, the deposition rate increased. Etching rate using the BOE increased as TEOS flow rate increased, but was independent of$ O_3$/TEOS ratio. Deposition rate of $5\mu\textrm{m}$/hour was obtained under the condition that the distance between showerhead and substrate was 5mm and the deposition temperature was $370^{\circ}C$.

• 열처리공학회지
• /
• 제2권4호
• /
• pp.1-10
• /
• 1989

To investigate the influence of temperature on the TiN film, it was deposited on the STC-3 steel and Si-wafer from $TiCl_4/N_2/H_2$ gas mixture by using the radio frequency plasma assisted chemical vapor deposition. The deposition was performed at temperature of $400^{\circ}C-500^{\circ}C$. The results showed that crystalline TiN film was deposited over $480^{\circ}C$, and all specimens showed the crystalline TiN X-ray diffraction peaks after vacuum heat treatment for 3 hrs, at $1000^{\circ}C$, $10^{-5}torr$. While the film thickness was increased above $480^{\circ}C$, it was decreased under $480^{\circ}C$ as temperature increased. And the contents of titanium were increased and it of chlorine were decreased as temperature increased. Because temperature increase was attributed to the increase in the density of TiN film, surface hardness of TiN film was increased with temperature.

• 대한전기학회논문지:전기물성ㆍ응용부문C
• /
• 제50권10호
• /
• pp.504-508
• /
• 2001

The$(Sr_{1-x}Ca_x)TiO_3$(SCT) thin films are deposited on Pt-coated electrode $(Pt-TiN /SiO_2Si)$ using RF sputtering method at various deposition temperature. The crystallinity of thin films was increased with increased of deposition temperature n the temperature range of 200~500 $[^{\circ}C]$. The capacitance changes almost linearly in temperature ranges of -80~+90$[^{\circ}C]$. All SCT thin films used in the study the phenomena of dielectric relaxation with the increase of frequency, and the relaxation frequency is observed above 200[kHz]. V-I characteristics of SCT thin films show the increasing leakage current with the increases of deposition temperature.

• 전기학회논문지
• /
• 제56권10호
• /
• pp.1786-1790
• /
• 2007

The $(SrCa)TiO_3(SCT)$ thin films are deposited on Pt-coated electrode ($Pt/TiN/SiO_2/Si$) using RF sputtering method at various deposition temperature. The dielectric constant of SCT thin films were increased with the increase of deposition temperature, and changed almost linearly in temperature ranges of $-80{\sim}+90[^{\circ}C]$. Also, SCT thin films was observed the phenomena of dielectric relaxation with the increase of frequency, and the relaxation frequency was observed above 200[kHz]. V-I characteristics of SCT thin films show the increasing leakage current with the increases of deposition temperature. The conduction mechanism of the SCT thin films observed in the temperature range of $25{\sim}100[^{\circ}C]$ can be divided into three characteristic regions with different mechanism by the increasing current. The region 1 below 0.8[MV/cm] shows the ohmic conduction. The region 2 can be explained by the Child's law, and the region 3 is dominated by the tunneling effect.