• 한국진공학회지
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• 제12권4호
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• pp.275-280
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• 2003

Si(III) 표면위에 Gd$_2O_3:Eu^{3+}$ 결정성 형광체 박막을 이온화 집단체 증착방법으로 증착하여 이온선을 주입, 결정을 파괴한 후에 열처리를 통하여 결정구조를 변화시켰다. 초기 생장시의 결정성은 고에너지 전자회절 (RHEED)을 통해 확인하고, X선 회절과 적외선 분광법을 이용하여 시료의 결정구조의 변화를 관측하였다. Near Edge X-ray Absorption Fine Structure (NEXAFS)를 통해 전자구조의 변화를 확인하였다. 이러한 변화들이 발광 특성에 미치는 영향을 Photoluminescence (PL), Cathodoluminescence (CL), 그리고 Vacuum Ultraviolet (VUV) spectrum으로 알아보았다. 본 연구는 결정구조에 의해 변화된 전자구조가 형광체 박막의 발광특성에 미치는 영향을 보고한다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.287.1-287.1
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• 2013

The Isolation of few-layered transition metal dichalcogenides has mainly been performed by mechanical and chemical exfoliation with very low yields. in particular, the two-dimensional layer of molybdenum disulfide (MoS2) has recently attracted much interest due to its direct-gap property and potential application in optoelectronics and energy harvesting. However, the synthetic approach to obtain high-quality and large-area MoS2 atomic thin layers is still rare. In this account, a controlled thermal reductionsulfurization method is used to synthesize large-MoOx thin films are first deposited on Si/SiO2 substrates, which are then sulfurized (under vacuum) at high temperatures. Samples with different thicknesses have been analyzed by Raman spectroscopy and TEM, and their photoluminescence properties have been evaluated. We demonstrated the presence of single-, bi-, and few-layered MoS2 on as-grown samples. It is well known that the electronic structure of these materials is very sensitive to the number of layer, ranging from indirect band gap semiconductor in the bulk phase to direct band gap semiconductor in monolayers. This synthetic approach is simple, scalable, and applicable to other transition metal dichalcogenides. Meanwhile, the obtained MoS2 films are transferable to arbitrary substrates, providing great opportunities to make layered composites by stacking various atomically thin layers.

• 대한금속재료학회지
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• 제50권3호
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• pp.243-247
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• 2012

A ruthenium (Ru) catalytic layer and a conventional Pt layer were assessed as counter electrodes (CE) for dye sensitized solar cells (DSSCs). Ru films with different thicknesses of 34, 46, and 90 nm were deposited by atomic layer deposition (ALD). Pt layers with the same thicknesses were prepared by sputtering. $0.45cm^2$ DSSCs were prepared and their properties were characterized by FE-SEM, cyclic voltammetry (CV), impedance spectroscopy (EIS), and current-voltage (I-V). FE-SEM revealed that the crystallized Ru films and Pt films had been deposited quite conformally. CV showed that the catalytic activity of Pt was much greater than that of Ru. In addition, although the catalytic activity of Pt did not depend on the thickness, that of Ru showed an increase with increasing thickness. Impedance analysis revealed high charge transfer resistance at the Ru interface and a decrease with increasing Ru thickness, whereas Pt showed low resistance with no thickness dependence. Despite the relatively small catalytic activity of Ru, the I-V result revealed the average energy conversion efficiency of Ru and Pt to be 2.98% and 6.57%, respectively. These results suggest that Ru can be used as counter electrodes in DSSCs due to its extremely low temperature process compatibility.

• 한국방재학회 논문집
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• 제11권3호
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• pp.183-189
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• 2011

본 연구에서는 저수지내 퇴사저감을 위하여 댐 상류에 저사댐을 설치하여 퇴적토를 포착하는 방법의 적합성을 검토하기 위해 국내 10개 다목적댐 유역을 대상으로 저사댐을 설치할 경우의 퇴사 저감효과에 대하여 분석하였다. 총 27개 설치지점의 퇴사 저감효과를 분석한 결과, 연구대상 다목적 댐 중 대청댐유역의 본류인 금강 지점의 저사댐 설치시 퇴사 저감효과가 가장 큰 것으로 판단되었으며 저사댐 설치에 따른 수명연장효과는 미설치시 수명보다 약 60%가 연장되는 것으로 판단되었다. 또한 저사댐 설치로 인한 퇴사 저감률에 영향을 미치는 인자를 알아보기 위하여 회귀분석을 실시한 결과 유역면적비가 가장 큰 영향을 미치는 것으로 판단되었으며 유역면적비에 대한 회귀식을 도출 할 수 있었다. 본 연구결과를 통해 국내 저사댐 도입시 기대 퇴사저감 효과 산정이나 설치위치 검토를 위한 기초자료 활용될 수 있을 것으로 판단된다.

• 한국해양공학회지
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• 제32권6호
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• pp.502-510
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• 2018

In order to accumulate data to lower the friction coefficient of a press mold, tribological tests were performed before and after coating SM45C with a PVC/PO film and plasma coating (CrN, concept). The ultrasonic nanocrystal surface modification (UNSM)-treated material had a nano-size surface texture, high surface hardness, and large and deep compressive residual stress formation. Even when the load was doubled, the small amount of abrasion, small weight of the abrasion, and width and depth of the abrasion did not increase as much as those of untreated materials. A comparison of the weight change before and after the tribological test with the CrN and the concept coating material and that of the untreated material showed that the wear loss of the concept coating material and P-UNSM treated material (that is, the UNSM treated material treated with the concept coating) showed a tendency to decrease by approximately 55-75%. Concept 100N had a lower friction coefficient of about 0.6, and P-UNSM-30-100N showed almost the same curve as concept 100N and had a low coefficient of friction of about 0.6. The concept multilayer coating had a thickness of $5.32{\mu}m$. In the beginning, the coefficient of friction decreased because of the plasma coating, but it started to increase from about 250-300 s. After about 350 s, the coefficient of friction tended to approach the friction coefficient of the SM45C base metal. The SGV-280F film-attached test specimen was slightly pushed back and forth, but the SM45C base material was not exposed due to abrasion. The friction coefficient was 0.22, which was the lowest, and the tribological property was the best in this study.

• 한국결정성장학회지
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• 제29권3호
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• pp.123-131
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• 2019

본 연구에서는 $TiO_{2-x}$ 산화물 박막공정을 이용한 유해 자외선차단 투명 유연 소재를 개발하고자한다. 자외선 차단 특성: 자외선 파장대의 315 nm 차단율이 95 % 이상이면서, 자외선차단특성을 갖으면서 투명성을 높인 가시광선 투과율 78 % 이상(550 nm에서 전광투과율)의 시료를 만드는 공정기술을 개발하고자 하였다. 본 연구 결과로 고성능 자외선차단 박막의 유연 소자 공정조건을 확립하고, 이질성 특성의 투명 유연 소자의 혼합형 설계와 시장 요구에 다양하게 대응이 가능한 복합 증착 기술 정립, 롤투롤(roll-to-roll) 연속 공정의 실현 및 장비, 공정 국산화 기술 확립으로써 관련 산업으로의 기술 파급 효과가 클 것으로 사료된다.

• 대한금속재료학회지
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• 제49권1호
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• pp.79-84
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• 2011

Double-walled carbon nanotubes (DWCNTs) with high purity were produced by the catalytic decomposition of tetrahydrofuran (THF) using a Fe-Mo/MgO catalyst at $800^{\circ}C$. The as-synthesized DWCNTs typically have catalytic impurities and amorphous carbon, which were removed by a two-step purification process consisting of acid treatment and oxidation. In the acid treatment, metallic catalysts were removed in HCl at room temperature for 5 hr with magnetic stirring. Subsequently, the oxidation, using air at $380^{\circ}C$ for 5 hr in the a vertical-type furnace, was used to remove the amorphous carbon particles. The DWCNT suspension was prepared by dispersing the purified DWCNTs in the aqueous sodium dodecyl sulfate solution with horn-type sonication. This was then air-sprayed on ITO glass to fabricate DWCNT field emitters. The field emission properties of DWCNT films related to transmittance were studied. This study provides the possibility of the application of large-area transparent CNT field emission cathodes.

• Advances in nano research
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• 제13권3호
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• pp.259-267
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• 2022

Two-dimensional (2D) transition metal carbides/nitrides or "MXenes" belong to a diverse-class of layered compounds, which offer composition- and electric-field-tunable electrical and physical properties. Although the majority of the MXenes, including Ti₃C₂T_x, are metallic, they typically show semiconductor-like behaviour in their percolated thin-film structure; this is also the most common structure used for fundamental studies and prototype device development of MXene. Magnetoconductance studies of thin-film MXenes are central to understanding their electronic transport properties and charge carrier dynamics, and also to evaluate their potential for spin-tronics and magnetoelectronics. Since MXenes are produced through solution processing, it is desirable to develop deposition strategies such as inkjet-printing to enable scale-up production with intricate structures/networks. Here, we systematically investigate the extrinsic negative magnetoconductance of inkjetprinted Ti₃C₂T_x MXene thin-films and report a crossover from weak anti-localization (WAL) to weak localization (WL) near 2.5K. The crossover from WAL to WL is consistent with strong, extrinsic, spin-orbit coupling, a key property for active control of spin currents in spin-orbitronic devices. From WAL/WL magnetoconductance analysis, we estimate that the printed MXene thin-film has a spin orbit coupling field of up to 0.84 T at 1.9 K. Our results and analyses offer a deeper understanding into microscopic charge carrier transport in Ti₃C₂T_x, revealing promising properties for printed, flexible, electronic and spinorbitronic device applications.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2003년도 추계학술발표회초록집
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• pp.119-119
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• 2003

Plasma polymerized organic thin films were deposited on Si(100) glass and Copper substrates at 25 ∼ 100 $^{\circ}C$ using cyclohexane and ethylcyclohexane precursors by PECVD method. In order to compare physical and electrochemical properties of the as-grown thin films, the effects of the RF plasma power in the range of 20∼50 W and deposition temperature on both corrosion protection efficiency and physical properties were studied. We found that the corrosion protection efficiency (P$\_$k/), which is one of the important factors for corrosion protection in the interlayer dielectrics of microelectronic devices application, was increased with increasing RF power. The highest P$\_$k/ value of plasma polymerized ethylcyclohexane film (92.1% at 50 W) was higher than that of the plasma polymerized cyclohexane film (85.26% at 50 W), indicating inhibition of oxygen reduction. Impedance analyzer was utilized for the determination of I-V curve for leakage current density and C-V for dielectric constants. To obtain C-V curve, we used a MIM structure of metal(Al)-insulator(plasma polymerized thin film)-metal(Pt) structure. Al as the electrode was evaporated on the ethylcyclohexane films that grew on Pt coated silicon substrates, and the dielectric constants of the as-grown films were then calculated from C-V data measured at 1㎒. From the electrical property measurements such as I-V ana C-V characteristics, the minimum dielectric constant and the best leakage current of ethylcyclohexane thin films were obtained to be about 3.11 and 5 ${\times}$ 10$\^$-12/ A/$\textrm{cm}^2$ and cyclohexane thin films were obtained to be about 2.3 and 8 ${\times}$ 10$\^$-12/ A/$\textrm{cm}^2$.

• 한국재료학회지
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• 제10권11호
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• pp.778-783
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• 2000

고주파 스피터 방법으로 제조된 SnO$_2$감지막 위에 에어로졸 화염 증착법으로 알루미나 표면 보호층을 증착하여 SnO$_2$박막 가스 센서의 감지 특성에 미치는 영향에 대햐여 조사하였고, 표면 보호층에 귀금속 Pt를 도핑하여 Pt의 함량이 CO 및 CH(sub)4 가스들의 선택성에 미치는 영향에 대하여 조사하였다. SnO$_2$박막은 R.F power 50 W, 공정 압력 4 mtorr, 기판온도 20$0^{\circ}C$에서 30분간 0.3$\mu\textrm{m}$ 두께로 Pt 전극 위에 제조하였고, 질산알루미늄(Al(NO$_3$).9$H_2O$) 용액을 희석하여 에어로졸 화염증착법으로 알루미나 표면 보호층을 만든후 $600^{\circ}C$에서 6시간동안 산소분위기에서 열처리하였다. 알루미나 표면 보호층이 증착된 SnO$_2$가스 센서소자의 경우 보호층이 없는 가스 센서와 비교하여 CO 가스에 대한 감도는 매우 감소하였으나 CH$_4$가스에 대한 감도 특성은 순수한 SnO$_2$센서 소자와 비슷하였다. 결과적으로 보호층을 이용하여 CH$_4$가스에 대한 상대적인 선택성 증가를 이룰 수 있었다. 특히 표면 보호층에 Pt가 첨가된 센서 소자의 경우 CO 가스에 대해서는 낮은 감도 특성을 나타내었으나 CH$_4$에 대한 감도는 매우 증가하여 CH$_4$가스의 선택성을 더욱 증대시킬 수 있었다. CH$_4$가스 선택성 향상에 미치는 알루미나 표면 보호층과 Pt의 역할에 대하여 고찰해 보았다.