• Proceedings of the KIEE Conference
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• 1998.11c
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• pp.889-891
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• 1998

Copper films have been deposited on glass substrate via a thermal decomposition of copper(II) formate using a focused $Ar^+$ laser emitting at 514 nm. The growth kinetics of these Cu films was investigated as a function of laser power and scan speed which varied in the range of 70-150 mW and 0.1-20 mm/s, respectively. The resistivity of the copper films was a factor of about 20 higher than· that of bulk value, but the resistivity decreased due to changes in morphology and porosity of the deposit after annealing at $300^{\circ}C$, 5 min. and was about $10{\mu}{\Omega}cm$.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.859-862
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• 2003

Well-aligned multiwall carbon nanotubes (MWCNTs) were prepared at low temperature of 400 $^{\circ}C$ by utilizing a radio frequency plasma-enhanced chemical vapor deposition (rf-PECVD) system. The MWCNTs were treated by an external rf plasma source and an ultra-violet laser in order to modify structural defect of carbon nanotube and to ablate possible contamination on carbon nanotube surface. Structural properties of carbon nanotubes were investigated by using a scanning electron microscopy (SEM), Raman spectroscopy, Fourier transformer Infrared spectroscopy (FTIR) and transmission electron microscope (TEM). In addition, the emission properties of the MWNTs were measured for the application of field emission display (FED) in near future. Various post treatments were found to improve the field emission property of carbon nanotubes.

• Carbon letters
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• v.10 no.4
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• pp.320-324
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• 2009

We investigated the effect of diameter and content of carbon nanotubes (CNTs) on the physical properties of styrenebutadiene rubber (SBR)/CNTs nanocomposites. CNTs-reinforced SBR nanocomposites were prepared by the melt mixing process. CNTs with different diameters were synthesized by the chemical vapor deposition method (CVD). In this work, the mechanical property and other physical properties of SBR/CNTS nanocomposites were discussed as a function of the content and diameter of CNTs.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.1230-1233
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• 2004

Ozone is useful oxidizing gas for the fabrication of oxide thin films. Accordingly researching on oxidizing gas is required. In order to obtain high quality oxide thin films, higher ozone concentration is necessary. In this paper oxidation property was evaluated relation between oxide gas pressure and inverse temperature(CuO reaction). The obtained condition was formulated by the fabrication of Cu metal thin film by co-deposition using the ion Beam Sputtering method. Because the CuO phase peak appeared at the XRD evaluation of the CuO thin film using ozone gas, this study has succeeded in the fabrication of the CuO phase at $825^{\circ}C$.

• Proceedings of the Korean Society For Composite Materials Conference
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• 2004.10a
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• pp.19-22
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• 2004

A numerical system to extract effective elastic properties of polycrystalline thin-films for MEMS devices is already developed. In this system, the statistical model based on lattice system is used for modeling the microstructure evolution simulation and the key kinetics parameters of given micrograph, grain distributions and deposition process can be extracted by inverse method proposed in the system. In this work, the effective elastic properties of polysilicon, $BaTiO_3\;and\;ZrTiO_4$ are extracted using this system and by employing the fraction of the potential site($f_P$) as a kinetics parameter for the microstructure evolution, the statistical tendency of these materials is studied.

• Proceedings of the Korean Society For Composite Materials Conference
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• 2004.10a
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• pp.43-46
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• 2004

Multi-walled carbon nanotubes (MWNTs) produced by chemical vapor deposition were treated with acidic solution for purification and oxidization of CNTs. The surface modification of the oxidized CNTs was achieved by amine treatment and oxygen plasma treatment. The functionalized CNTs were embedded in the epoxy resin by sonication method and the resulting composite was investigated by FESEM. Rheological and mechanical properties of nanocomposites were measured by AR2000 and Instron. The rheological properties and dispersion of modified CNTs/epoxy composites were improved as CNTs were modified, because the modification of CNTs led to a improvement interaction between the CNTs and the epoxy resin. In addition to this, mechanical properties are also improved because of the effective stress transfer between the CNTs and the polymer.

• Journal of the Korean Ceramic Society
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• v.30 no.1
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• pp.55-61
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• 1993

In the WSi2/CVD-Si/SiO2 polycide structure, electrode resistance and its property were studied as a function of deposition temperature and thickness of CVD-Si, diffusion condition of POCl3, and WSi2 being deposited or not. Resistivity of poly-Si is decreased with increment of thickness in the case of POCl3 diffusion of low sheet resistance, but it is increased in the case of high sheet resistance. The resistivity of amorphous-Si is generally lower than that of poly-Si. Initial sheet resistance of poly-Si/WSi2 gate electrode is affected by the thickness and resistance of poly-Si layer, but final resistance after anneal, 900$^{\circ}C$/30min/N2, is only determined by WSi2 layer. Flourine diffuses into SiO2, but tungsten does not. In spite of out-diffusion of phosphorus into WSi2 layer, the sheet resistance is not changed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04b
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• pp.153-156
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• 2004

The $Pb(Zr_{0.4}Ti_{0.6})O_3/Pb(Zr_{0.6}Ti_{0.4})O_3$ [PZT(4060)/(6040)] heterolayered thin films were deposited by RF sputtering method on the $Pt/TiO_2/SiO_2/Si$ substrate. The effects of the structural and dielectric properties of PZT heterolayered thin films were investigated. The MFM(Metal Ferroelectric Metal) type capacitors were made using the PZT(6040)/(4060) heterolayered thin films deposited with optimum deposition condition. An enhanced dielectric property was observed in the PZT(4060)/(6040) thin films. Investigating the dielectric constant and dielectric loss characteristics. the application for the next-generation dielectric thin films and memory devices were studied.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.11a
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• pp.67-72
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• 1992

In this paper, We prepared the thin film Cu-doped CdS Photovoltaic Cell, varying deposition condition by E-beam process and investigated its properties. After the Cu/CdS films were deposited on transparent ITO glass. We heat-treated to diffuse Cu atoms to CdS fi1m at 350[$^{\circ}C$]. With deposited Cu-doped CdS film. We investigated the electrical. optical. X-ray diffraction and junction property. We studied how to prepare the High conversion efficiency Solar cell window layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.04a
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• pp.111-114
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• 2003

Compared to a conventional atomic layer deposition (ALD) grown Al203 film, Plasma enhanced ALD (PEALD) grown AION film was revealed to possess a large breakdown field, which is necessary for stable operation of thin film electroluminescent (TFEL) device. Also, AION is more stable than Al203 films grown by PEALD or by ALD after post-annealing process, which is inevitably required to improve luminance property of phosphor. Furthermore, AION films were applied to insulators of ZnS:Tb TFEL device. Resultant1y, they show better stability than ALD grown insulators under high electric field.