• Transactions of the Korean Society of Mechanical Engineers A
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• v.40 no.10
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• pp.865-871
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• 2016

In recent years, traditional scaffold fabrication techniques such as gas foaming, salt leaching, sponge replica, and freeze casting in tissue engineering have significantly limited sufficient mechanical property and cell interaction effect due to only random pores. Fused deposition modeling is the most apposite technology for fabricating the 3D scaffolds using the polymeric materials in tissue engineering application. In this study, 3D slurry mould was fabricated with a blended biphasic calcium phosphate (BCP)/Silica/Alginic acid sodium salt slurry in PCL mould and heated for two hours at $100^{\circ}C$ to harden the blended slurry. 3D dual-pore BCP/Silica scaffold, composed of macro pores interconnected with micro pores, was successfully fabricated by sintering at furnace of $1100^{\circ}C$. Surface morphology and 3D shape of dual-pore BCP/Silica scaffold from scanning electron microscopy were observed. Also, the mechanical properties of 3D BCP/Silica scaffold, according to blending ratio of alginic acid sodium salt, were evaluated through compression test.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.41 no.7
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• pp.607-612
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• 2017

Recently, additive manufacturing (AM) technology, also known as 3D printing technology, has attracted attention as an innovative production method to fabricate functional components having complex shapes with saving materials. In particular, a fabrication of poly lactic acid (PLA) parts through a fused deposition modeling (FDM) technique has attracted much attention in the medical field. In this paper, an experimental study on the identification of dominant process parameters influencing mechanical properties of PLA parts fabricated by the FDM process is conducted, and their optimal values for maximizing the mechanical properties are obtained. Three process parameters are considered in this research, namely, layer thickness, a part orientation and in-fill. It is known that thin layer thickness, part orientation diagonal to the tension direction, and full in-fill are optimal conditions to maximize the mechanical properties.

• Applied Chemistry for Engineering
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• v.21 no.5
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• pp.527-531
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• 2010

The optimized sheet for EMI shielding was prepared by metal power with Fe series. Then various metal powders were deposited on the sheet by PVD method. Moreover, the PVdF nanofiber membrane was used to compare the characteristic of EMI shielding efficiency of various metal powders. The electrical property was measured by the 4-point probe method. The result from EDS confirmed that the metal powder existed on the sheet. EMI shielding efficiency was analysed by EMI shielding measurement apparatus. The lowest electrical resistance, $641.95{\Omega}{wcdot}cm$, was obtained with $1000\;{\AA}$ deposition of Cu on the sheet. It was revealed that the EMI shielding efficiency increased with increase of the metal deposition thickness. The sheet deposited by Cu with $1000\;{\AA}$ showed the highest EMI shielding efficiency, 32.5 dB.

• Journal of the Korean Vacuum Society
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• v.18 no.5
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• pp.384-389
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• 2009

ZnO, a wurtzite lattice structure, has attracted much attention as a promising material for light-emitting diodes (LEDs) due to highly efficient UV emission resulting from its large band gap of 3.37 eV, large exciton binding energy of 60 meV, and low power threshold for optical pumping at room temperature. For the realization of LEDs, both n-type ZnO and p-type ZnO are required. Now, n-type ZnO for practical applications is available; however, p-type ZnO still has many drawbacks. In this study, ZnO films were grown on glass substrates by using atomic layer deposition (ALD) and the ZnO films were irradiated by nitrogen ion beams (20 keV, $10^{13}{\sim}10^{15}ions/cm^2$). The effects of nitrogen-beam irradiation on the ZnO structure as well as the electrical property were investigated by using fieldemission scanning electron microscopy (FESEM) and Hall-effect measurement.

• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.81-83
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• 2000

Tin-doped indium oxide(ITO) thin films were deposited on polyethylene terephthalate(PET) at room temperature by oxygen ion beam assisted evaporator system and the effects of oxygen gas flow rate on the properties of room temperature ITO thin films were investigated. Plasma characteristics of the ion gun such as oxygen ions and atomic oxygen radicals as a function of oxygen flow rate were investigated using optical emission spectroscopy(OES). Faraday cup also used to measure oxygen ion density. The increase of oxygen flow rate to the ion gun generally increase the optical transmittance of the deposited ITO up to 6sccm of $O_2$ and the further increase of oxygen flow rate appears to saturate the optical transmittance. In the case of electrical property, the resistivity showed a minimum at 6 sccm of $O_2$ with the increase of oxygen flow rate. Therefore, the improved ITO properties at 6 sccm of $O_2$ appear to be more related to the incorporation of low energy oxygen radicals to deposited ITO film rather than the irradiation of high energy oxygen ions to the substrate. At an optimal deposition condition, ITO thin films deposited on PET substrates showed the resistivity of $6.6{\times}10^{-4}$ ${\Omega}$ cm and optical transmittance of above 90%.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.630-630
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• 2013

Recently, atomically smooth hexagonal boron nitride(h-BN) known as a white graphene has drawn great attention since the discovery of graphene. h-BN is a III-V compound and has a honeycomb structure very similar to graphene with smaller lattice mismatch. Because of strong covalent sp2bonds like graphene, h-BN provides a high thermal conductivity and mechanical strength as well as chemical stability of h-BN superior to graphene. While graphene has a high electrical conductivity, h-BN has a highly dielectric property as an insulator with optical band gap up to 6eV. Similar to the graphene, h-BN can be applied to a variety of field, such as gate dielectric layers/substrate, ultraviolet emitter, transparent membrane, and protective coatings. However, up until recently, obtaining and controlling good quality monolayer h-BN layers have been too difficult and challenging. In this work, we investigate the controlled synthesis of h-BN layers according to the growth condition, time, temperature, and gas partial pressure. h-BN is obtained by using chemical vapor deposition on Cu foil with ammonia borane (BH3NH3) as a source for h-BN. Scanning Transmission Electron Microscopy (STEM, JEOL-JEM-ARM200F) is used for imaging and structural analysis of h-BN layer. Sample's surface morphology is characterized by Field emission scanning electron microscopy (SEM, JEOL JSM-7100F). h-BN is analyzed by Raman spectroscopy (HORIBA, ARAMIS) and its topographic variations by Atomic force microscopy (AFM, Park Systems XE-100).

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.1
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• pp.41-45
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• 2014

We have investigated the passivation property of $SiN_x$ and $SiO_2$ thin films formed using various process conditions for the application of crystalline Si solar cells. An increase in the thickness of $SiN_x$ deposited using plasma enhanced chemical vapor deposition (PECVD) led to the improvement of passivation quality. This could be associated with the passivation of Si dangling bonds by hydrogen atoms which were supplied during PECVD deposition. The $SiO_2$ thin films grown using dry oxidation process exhibited better passivation behavior than those using wet oxidation process, implying the dry oxidation process was more effective in the formation of high quality $SiO_2$ thin films. The relative effective life time gradually decreased with increasing dry oxidation temperature. Such a degradation of passivation behavior could be attributed to the increase in interface trap density caused by thermal damages.

• The Journal of Korean Academy of Prosthodontics
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• v.45 no.6
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• pp.769-779
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• 2007

Statement of problem. When TiN coating is applied to the abutment screw, occurrence of greater preload and prevention of the screw loosening could be expected due to decrease of frictional resistance. However, the proper thickness of TiN coating on abutment screw has not been yet reported. Purpose. The purpose of this study is to find out the appropriate TiN coating thickness by evaluating the detorque force and the surface change of titanium abutment screw with various TiN coating thickness. Material and methods. 1. Material Thirty five non-coated abutment screws were prepared for TiN coating. TiN coatings were prepared by Arc ion plating method. Depending on the coating deposition time(CDT), experimental groups were divided into 6 groups(CDT 30min, 60min, 90min, 120min, 150min, 180min) and those of 1 group was not coated as a control group. Each group was made up of 5 abutment screws. 2. Methods FE-SEM(Field Emission Scanning Electron Microscoper) and EDX(Energy Dispersive X-ray Spectroscopy) were used to observe the surface of the abutment screw. Electric scales was used to measure the weight of the abutment screw after the repeated closing and opening of 10 trials. Detorque force was measured with digital torque gauge, at each trial. Results. 1. As the coating deposition time increased, the surface became more consistent and smooth. 2. As for the abutment screws that were TiN coated for more than 60 minutes, no surface change was found after the repeated closing and opening. 3. The TiN coated abutment screws showed less weight change than the non-coated abutment screws. 4. The TiN coated abutment screws showed higher mean detorque force than the noncoated abutment screws. 5. The abutment screw coated for 60 minutes showed the highest mean detorque force. Conclusion. The coating layer of proper thickness is demanded to obtain consistent and smooth coating surface, resistance to wear, and increased detorque force of the abutment screw. In conclusion, the coating deposition time of 60 minutes indicated improved mechanical property, when TiN coating was conducted on titanium abutment screw.

• Journal of the Korean Ceramic Society
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• v.36 no.4
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• pp.403-409
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• 1999

The dielectric and pyroelectric properties of $Ba_{0.66}$$Sr_{0.38}$$TiO_{3}$(BST) thin films growtn on Pt/Ti/NON/Si us-ing RF magnetron sputtering have been investigated. With increasing the substrate temperature during de-position of the BST film in the range of 300-$600^{\circ}C$ the dielectric and pyroelectric constants of the film were increased due to improved crystallinity of the film. In addition the dependence of the microstructural and electrical properties of BST films onthe deposition temperature of the bottom Pt electrode was studied. The preferred orientation of the BST films as well as the microstructure of the Pt film was greatly in-fluenced by the deposition temperature of the bottom Pt electrode was studied. The preferred orientation of the BSt films as well as the microstructure of the Pt film was greatly in-fluenced by the deposition temperature of the bottom Pt electrodes. and thus so were the pyrolelectric pro-perties of the BST film. The highest value of pyroelectric coefficient at room temperature obtained in this work was $nCcm^{-2}K^{-1}$ which is much higher than those previously reported on other perovskite fer-roelectric thin films.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.57 no.2
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• pp.140-145
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• 2008

The purpose of this paper is to discuss the fabrication of $\beta$-PVDF($\beta$-Polyvinylidene fluoride, ${\beta}-PVF_2$) organic thin films using the vapor deposition method. Vapor deposition was performed under the following conditions: the temperature of evaporator, the applied electric field, and the pressure of reaction chamber were $270^{\circ}C$, 142.4 kV/cm, and $2.0{\times}10^{-5}\;Torr$, respectively. The molecular structure of the evaporated organic thin films were evaluated by a FT-IR. The results showed that the characteristic absorption peaks of $\beta$-form crystal increase from 72% to 95.5% with an increase in the substrate temperature. In the analysis of the electric characteristics, the abnormal increases in the relative dielectric constant and the dielectric loss factor in the regions of low frequency and high temperature are known to be caused by inclusion of impurity carriers in the PVDF organic thin films. In order to analyze quantitatively the abnormalities in the conductivity mechanism caused by ionic impurities, the product of the ion density and the mobility that affect the electrical property in polymeric insulators is analyzed. In the case of a specimen produced by varying the substrate temperature from $30^{\circ}C$ to $105^{\circ}C$, the product of mobility and the ion density decreased from $4.626{\times}10^8$ to $8.47{\times}10^7/V{\cdot}cm{\cdot}s$. This result suggests that the higher the substrate temperature is maintained, the better excluded the impurities are, and the more electrically stable material can be obtained.