• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 심포지엄 논문집 정보 및 제어부문
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• pp.108-110
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• 2006

A prediction model of charge concentration of silicon nitride (SiN) thin films was constructed by using neural network and genetic algorithm. SIN films were deposited by plasma enhanced chemical vapor deposition and the deposition process was characterized by means of $2^{6-1}$ fractional factorial experiment. Effect of five training factors on the model prediction performance was optimized by using genetic algorithm. This was examined as a function of the learring rate. The root mean squared error of optimized model was 0.975, which is much smaller than statistical regression model by about 45%. The constructed model can facilitate a Qualitative analysis of parameter effects on the charge concentration.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 초전도 자성체
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• pp.37-40
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• 2002

Superconductor wire fabricated by electrophoresis showed its critical current density depended on parameters such as applied voltage and deposition time. Substrate and suspension solutions. and its properties are also important parameters. When same optimal parameter and condition was used, deposition density of superconductor film affect directly its critical current density. In this study, therefore, electrophoretic deposition technique was utilized for a densification of YBCO superconducting wire, and researches on electrophoretic suspension solutions and additive were experimentally performed for an improvement of the critical current density of fabricated electrophoretically superconducting wire. The samples fabricated in the solution with the additive, 8 vol.% of 1% PEG(1000), showed the highest critical current density.

• 대한전자공학회논문지
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• 제27권7호
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• pp.1049-1058
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• 1990

Mathematical modeling equations of a parallel plate type reactor were obtained in the PECVD process in preparing hydrogenated amorphous silicon. Velocity profiles, temperature profiles and concentration profiles in the reactor were calculated from the model. The theoretical approach was attempted to obtain the deposition rate and film uniformity at different operating conditions by calculating RF discharge parameters and establishing the reaction mechanisms of a-Si:H thin film. The modelling equations are solved by a finite difference method with control volume balance. The mean electrom energy in discharge was applied to model simulation parameter. The magnitudes of the predicted deposition rate are in good aggrement with those of experiment. The results of computer simulation shows that uniform deposition profiles can.

• 대한금속재료학회지
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• 제49권4호
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• pp.329-333
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• 2011

To develop wide-band noise absorbers with a special design for low-frequency performance, this study proposes a tin oxide (Sn-O) thin films as the noise absorbing materials in a microstrip line. Sn-O thin films were deposited on polyimide film substrates by reactive sputtering of the Sn target under flowing $O_{2}$ gas, exhibiting a wide variation of surface resistance (in the range of $10^{0}-10^{5}{\Omega}$) depending on the oxygen partial pressure during deposition. The microstrip line with characteristic impedance of $50\Omega$ was used for the measurement of noise absorption by the Sn-O films. The reflection parameter $(S_{11})$ increased with a decrease of surface resistance due to an impedance mismatch at the boundary between the film and the microstrip line. Meanwhile, the transmission parameter $(S_{21})$ diminished with a decrease of surface resistance resulting from an Ohmic loss of the Sn-O films. The maximum noise absorption predicted at an optimum surface resistance of the Sn-O films was about $150{\Omega}$. For this film, greater power absorption is predicted in the lower frequency region (about 70% at 1 GHz) than in conventional magnetic sheets of high magnetic loss, indicating that Ohmic loss is the predominant loss parameter for the conduction noise absorption in the low frequency band.

• 한국전기전자재료학회논문지
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• 제19권7호
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• pp.680-686
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• 2006

Tin oxide$(SnO_2)$ thin films were prepared on glass substrate by Plasma Enhanced Chemical Vapor Deposition (PECVD) method. $SnO_2$ thin films were prepared using gas mixture of dibutyltin diacetate as a precursor and oxygen as an oxidant at 275, 325, 375, $425^{\circ}C$, respectively as a function of deposition temperature. The XRD peaks corresponded to those of polycrystalline $SnO_2$, which is in the tetragonal system with a rutil-type structure. As the deposition temperature increased, the texture plane of $SnO_2$ changed from (200) plane to denser (211) and (110) planes. Lower deposition temperature and shorter deposition time led to decreasing surface roughness and electrical resistivity of the formed thin films at $325\sim425^{\circ}C$. The properties of $SnO_2$ films were critically affected by deposition temperature and time.

• 한국표면공학회지
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• 제20권3호
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• pp.106-117
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• 1987

The microhardness and the structural characteristics of the chemically vapor deposited TiN film on the 430 stainless steel substrate have been investigated with various deposition parameters such as the deposition time, the total flow rate, the flow rate ratio $(H_2/N_2)$, and the deposition temperature. The most important factor to affect the microhardness of the TiN film in this study was the denseness of the structure in connection with the degree of the lattice strain. The relationship between the lattice parameter changes and the grain size variation under all deposition conditions generally followed the grain boundary relaxation model. The (111) preferred orientation prevailed in the early stage of the deposition conditions, however, the (200) preferred orientation was developed in the later stage. The surface morphology at optimum conditions displayed a dense diamond shaped structure and the microhardness of the films was high (1700-2400Hv) regardless of the type of the substrates used.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.356-357
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• 2006

Tin oxide thin films have been prepared on display glass from mixtures of dibutyl tin diacetate as a tin source, oxygen as an oxidant by Plasma Enhanced Chemical Vapor Deposition (PECVD) method. The relationships between the properties of tin oxide thin films and various reaction parameters such as the deposition temperature, deposition time and the oxygen gas flow rate were studied. As the deposition temperature increased, the texture plane of $SnO_2$ changed from (200) plane to denser (211) and (110) planes. Lower deposition temperature and thinner thickness of deposited film led to decreasing grain size, surface roughness and electrical resistivity of the formed thin films at $325{\sim}425^{\circ}C$. The properties of fabricated $SnO_2$ films are highly changed with variations of substrate temperature and deposition time.

• 한국컴퓨터정보학회논문지
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• 제17권11호
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• pp.11-18
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• 2012

토석류 퇴적 모델은 토석류에 의한 피해지 예측을 위해 random walk model(RWM)을 사용하여 구성한 모델로 피해지 예측에서 그 효용성이 입증되었지만 몇 개의 자유 파라미터가 실험적으로 결정되어야 하는 문제점이 있다. 파라미터를 자동으로 추정하기 위한 방법은 여러 가지가 있지만 토석류 데이터는 학습 데이터의 크기가 작아 기존 학습 기법을 적용하는데 어려움이 있다. 이 논문에서는 학습 데이터 크기 문제를 완화할 수 있는 신경망의 변형인 의사 샘플 신경망을 제안하였다. 의사 샘플 신경망은기존 샘플로부터 의사 샘플을생성하고 이를 학습에 사용한다. 의사 샘플은 해공간을 평탄화시키고 국부 최적해에 빠질 확률을 줄여줌으로써 기존 신경망에 비해 안정적인 파라미터 추정이 가능해진다. 이러한 사실은 실험 결과 통해 확인할 수 있다.

• 한국산업융합학회 논문집
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• 제25권4_2호
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• pp.699-706
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• 2022

In this study, Directed energy deposition (DED) among additive manufacturing is applied to repair damaged spindle key parts of planner miller. The material of the spindle key is SCM415, and the P21 Powder is used. In order to find the optimal deposition conditions for DED equipment, a single-line deposition experiment is conducted to analysis five parameters. The laser power affects the width, and the height is a parameter affected by coaxial gas and powder gas. In addition, laser power, powder feed rate, coaxial gas, and powder gas are parameters that affect dilution. Otimal deposition is that 400 W of laser power, 4.0 g/min of powder feed rate, 6.5 L/min of coaxial gas, 3.0 L/min of powder gas and 4.5 L/min of shield gas. By setting the optimum conditions, a uniform deposition cross section in the form of an ellipse can be obtained. Damage recovery process of spindle key consists of 3D shape design of the base and deposition parts, deposition path creation and deposition process, and post-processing. The hardness of deposited area with P21 powder on the SCM415 spindle key is 336 HV for the surface of the deposition, 260 HV for the boundary area, and 165 HV for the base material.

• Journal of Radiation Protection and Research
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• 제27권3호
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• pp.165-170
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• 2002

핵종의 지표 침적 모델의 고찰과 함께 방사성물질의 공기중 농도로부터 건침적 뿐 아니라 습침적에 따른 농작물 오염 영향을 분석, 고찰하였다. 이를 위해 방사성물질의 지표 침적량으로부터 농작물의 오염을 평가하는 기존 동적 섭식경로모델을 공기중 농도 또는 지표 침적량으로부터 평가할 수 있도록 개선하였다. 평가결과, 방사성물질의 지표 침적량은 습침적에 의한 영향이 건침적에 의한 영향보다 뚜렷이 높으나, 농작물의 오염정도는 핵종, 강우율 등에 따라 다르게 나타났다. 이러한 현상은 방사성물질의 지표 침적과 농작물에로의 차단중 어느 과정이 농작물 오염에 보다 지배적으로 작용하는가에 기인한다.