• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1993.11a
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• pp.120-123
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• 1993

This paper describes the deposition and characteristics of electrochromic tungsten oxide thin films for electrochromic smart windows. Tungsten Oxide thin films(WO$_3$) are deposited by thermal evaporation techniques. By varying deposition parameters, WO$_3$ thin films exhibit different optical properties. The electrochromic devices are consist of ITO glass/ WO$_3$ thin films/ LiClO$_4$-propylene carbonate electrolyte/ counter electrode. The electrochromic properties of tungsten oxide thin films with different deposition condition ale investigated.

• Journal of Environmental Science International
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• v.4 no.2
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• pp.151-158
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• 1995

A numerical model has been developed to predict the deposition of air pollutants considering canopy effect. In this model, the deposition velocity is calculated using the deposition resistances(aerodynamic resistance, viscosity resistance, surface resistance). Using the results, a comparative study was made between the model calculation and observation results. The calculated daily variation of deposition resistances and in daytime most of the model cases are well agreed with observation results, and a slight difference was found in nighttime. From the results, it is suggested that the present model is capable of estimating the deposition velocity of air Pollutants considering characteristics of canopy layer.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.86-86
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• 2003

Copper has attracted much attention in the deep submicron ULSI metallization process as a replacement for aluminum due to its lower resistivity and higher electromigration resistance. Electroless copper deposition method is appealing because it yields conformal, high quality copper at relatively low cost and a low processing temperature. In this work, it was investigated that effect of the microstructure of the substrate on the electroless deposition. The mechanism of the nucleation and growth of the palladium nuclei during palladium activation was proposed. Electroless copper deposition on TiN barriers using glyoxylic acid as a reducing agent was also investigated to replace toxic formaldehyde. Furthermore, electroless copper deposition on TaN$\sub$x/ barriers was examined at various nitrogen flow rate during TaN$\sub$x/ deposition. Finally, it was investigated that the effect of plasma treatment of as-deposited TaN$\sub$x/ harriers on the electroless copper deposition.

• Journal of Korean Society for Atmospheric Environment
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• v.21 no.6
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• pp.657-666
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• 2005

The objectives of this study were to investigate atmospheric dry deposition of inorganic nitrogen-containing compounds to waterbody. Target waterbody is Juam reservoir functioning as one of the major water supply sources in Chollanamdo. Nitrate and ammonium dry deposition fluxes were directly measured using dry deposition plate (DDP) covered with greased strips and a water surface sampler (WSS). The daytime average $NO_{3}^{-}\;and\;NH_{4}^{+}$ fluxes measured with DDP and WSS were $1.7\∼2.6$ times higher than those at nighttime. The seasonal average flux of $NH_{4}^{+}$ showed the highest value in summer. The daytime and nighttime average dry deposition fluxes of particulate phase Nitogen-containing Compounds ($1.13,\;0.80\;mg/m^{2}$ day) were much higher than those of gas phase compounds ($0.50,\;0.24\;mg/m^{2}$ day).

• Journal of Korean Society for Atmospheric Environment
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• v.15 no.5
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• pp.625-638
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• 1999

Air quality modeling for coastal urban region has been composed of a complex system including meteorological, chemical and physical processes and emission characteristics in complex terrain. In this study, we studied about an effect prediction for deposition phenomenon affecting on air quality in Pusan metopolitan metropolitan city. In air quality modeling including ship sources, a situation considered deposition process habe better result than not considered when compared with observed value. Air pollutants emitted into urban air during the daytime nearly removed through urban atmosphere polluted. Also these phenomena correlated concentration variation connent with sea/land breezes and terrain effect. Therefore we conclude that the concentration was low at daytime when deposition flux is high, and deposition effect on industrial complex and Dongrae region is considerable in particular.

• Journal of the Korean Ceramic Society
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• v.28 no.1
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• pp.1-10
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• 1991

Zirconium dioxide(ZrO2) thin films have been deposited by chemical vapor deposition technique involving the application of gas mixture of ZrCl4, and H2O into silicon wafers. The relationships between the deposition rate and various reaction parameters such as the deposition time, the gas flow rate, the deposition temperature, and the composition of reactant gases were studied. The film was identified as nearly stoichiometric monoclinic ZrO2. The apparent activation energy is about 19Kcal/mole at surface chemical reaction controlled region. The deposition rate is mainly influenced by the H2O-forming reacting between CO2 and H2.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.12
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• pp.69-76
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• 1993

The statistical methodology using RSM (response surface method) was used too ptimize the deposition conditions of selective CVD tungsten process for improving the deposition rate and the adhesion property. Temperature, flow rate of SiH$_4$ and WF$_6$ and H$_2$ and Ar carrier gases were chosen for the deposition variables and process characteristics due to carrier gas were intensively investigated. It was observed that temperature was the main factor influencingthe deposition rate in the case of H$_2$ carrier gas while the reactant ratio, $SiH_{4}/WF_{6}$, had the principal effect on the deposition rate in the case of Ar carrier gas. The increased deposition rate and the good adhesion to Si were obtained under Ar carrier gas compared to H$_2$ carrier gas. The optimum conditions for deposition rate and antipeeling property were found to be the temperature range of 300~32$0^{\circ}C$ and the reactant ratio, $SiH_{4}/WF_{6}$, of 0.5~0.6.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.6
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• pp.518-523
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• 2002

The influences of ion beam energy and reactive oxygen partial pressure on the physical and crystallographic characteristics of transition metal oxide compound(CrOx) film were studied in this paper. Chromium oxide films were deposited onto a cover-glass using ion Beam Sputter Deposition(IBSD) technique according to the various processing parameters. Crystallinity and grain size of as-deposited films were analyzed using XRD analysis. Thickness and Resistivity of the films were measured by $\alpha$-step and 4-point probe measurement. According to the XRD, XPS and resistivity results, the deposited films were the cermet type films which had crystal structure including amorphous oxide(a-oxide) phase and metal Cr phase simultaneously. The increment of the ion beam energy during the deposition process led to decreasing of metal Cr grain size and the rapid change of resistivity above the critical $O_2$ partial pressure.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2004.10a
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• pp.327-330
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• 2004

Laser aided direct metal deposition (LADMD) process offers the ability to make a metal component directly from 3-D CAD dimensions. A 3-D object can be formed by repeating laser cladding layer by layer. The key of the build-up mechanism is the effective control of powder delivery and laser power to be irradiated into the melt-pool. A feedback control system using optical sensors is introduced to control laser power and powder mass flow rate. Using H13 tool steel and $CO_2$ laser system, comprehensive analysis are executed to test the efficiency of the system. In addition, the dimensional characteristics of directed deposited material are investigated with the parameters of deposition thickness, laser power, traverse speed and powder mass flow rate.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1611-1614
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• 2007

This paper is concerned on design of organic flow deposition system and development of the deposition process for pentacene thin film by OFD and on electrical characteristics of pentacene films deposited by it. OFD will overcome vacuum thermal evaporator's limits and it will provide a large-scale mass, uniform and good electrical performance.