• 대한기계학회논문집
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• 제18권1호
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• pp.193-202
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• 1994

A study of heat transfer and particle deposition has been made numerically for outside vapor deposition process. Heat conduction through the two layer cylinder which consists of the target and the deposited layer is included together with heat transfer and gas jet flow onto the cylinder from the torch. Temperature and flow fields have been obtained by an iterative method and thermophoretic particle deposition has been studied. Of particlar interests are effects of the thickness of the deposited layer, the torch speed and the rotation speed of the cylinder on particle deposition flux and efficiency. Effects of buoyancy, variable properties and tube rotation are included.

• 한국기계가공학회지
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• 제12권2호
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• pp.62-67
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• 2013

The influence of internal stress and joint strength(shear, tensile) according to the deposition conditions was investigated by the Polyimide substrate and ZnO thin film. Deposition thickness and temperature affect the internal stress and the internal stress was minimum at the 60nm and $200^{\circ}C$ of the deposition conditions. Tensile strength is large at the deposition condition that shear strength is large and the shear strength was about 50% of the tensile strength. The shear strength and tensile strength were large at deposition condition that internal stress was small. Crack occurred near the joint interface of Polyimide substrate and progressed along the interface until the final fracture.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.356-356
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• 2007

Plasma immersion ion beam deposition (PIIBD) technique is a cost-effective process for the deposition of diamond like carbon thin film, the possible solid lubricant on large surface and a complex shape. We used PIIB process for the preparation of DLC thin film on $Al_2O_3$ with deposition conditions of deposition temperature range $200^{\circ}C$, working gas pressure of 1.310-1Pa. DLC thin films were coated by $C_2H_2$ ion beam deposition on $Al_2O_3$ after the ion bombardment of SiH4 as the bonding layer. Energetic bombardment of $C_2H_2$ ions during the DLC deposition to ceramic materials generated mixed layers at the DLC-Si interface which enhanced the interface to be highly bonded. Wear test showed that the low coefficient of friction of around 0.05 with normal load 2.9N and proved the advantage of the low energy ion bombardment in PIIBD process which improved the tribological properties of DLC thin film coated alumina ceramic. Furthermore, PIIBD was recognized as a useful surface modification technique for the deposition of DLC thin film on the irregular shape components, such as molds, and for the improvement of wear and adhesion problems of the DLC thin film, high temperature solid lubricant.

• 한국표면공학회지
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• 제54권3호
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• pp.139-143
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• 2021

Cr-Al-N coatings were deposited onto WC-Co substrates using a cathodic arc evaporation (CAE) system. CAE technique is recognized to be a very useful process for hard coatings because it has many advantages such as high packing density and good adhesion to metallic substrates. In this study, the influence of deposition temperature as a key process parameter on film growth behavior and mechanical properties of Cr-Al-N coatings were systematically investigated and correlated with microstructural changes. From various analyses, the Cr-Al-N coatings prepared at deposition temperature of 450℃ in the CAE process showed excellent mechanical properties with higher deposition rate. The Cr-Al-N coatings with deposition temperature around 450℃ exhibited the highest hardness of about 35 GPa and elastic modulus of 442 GPa. The resistance to elastic strain to failure (H/E ratio) and the index of plastic deformation (H³/E² ratio) were also good values of 0.079 and 0.221 GPa, respectively, at the deposition temperature of 450℃. Based on the XRD, SEM and TEM analyses, the Cr-Al-N coatings exhibited a dense columnar structure with f.c.c. (Cr,Al)N multi-oriented phases in which crystallites showed irregular shapes (50~100nm in size) with many edge dislocations and lattice mismatches.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2008년도 춘계학술대회 논문집
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• pp.434-435
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• 2008

An in-situ monitoring technique for deposition process of CdS buffer layer was developed in this work. A quartz crystal microbalance (QCM) was used to measure the frequency change during the CdS deposition process and the relation ship between frequency change and film thickness and optical transmittance was investigated. The film thickness shows a linear relationship with frequency change, demonstrating that frequency change measured by QCM can be used a in-situ monitoring tool for CdS deposition process.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 춘계학술대회 논문집 반도체재료
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• pp.54-56
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• 2001

The $SiH_4$ soak step is widely used during the CVD Tungsten(W) plug deposition process on the Ti/TiN barrier metal to prevent the $WF_6$ attack to the underlayer metal. We tried to reduce or skip the time of $SiH_4$ soak process to optimize W-plug deposition process on Via. The electrical characteristics including Via resistance and the structure of W film are affected according to $SiH_4$ soak time. The elimination possibility of $SiH_4$ soak process was confirmed in the case of that the CVD W film grows on the stable Ti/TiN underlayer.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.204-205
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• 2011

In thin film silicon solar cells, p-i-n structure is adopted instead of p/n junction structure as in wafer-based Si solar cells. PECVD is a most widely used thin film deposition process for a-Si:H or ${\mu}c$-Si:H solar cells. For best performance of thin film silicon solar cell, the dopant profiles at p/i and i/n interfaces need to be as sharp as possible. The sharpness of dopant profiles can easily achieved when using multi-chamber PECVD equipment, in which each layer is deposited in separate chamber. However, in a single-chamber PECVD system, doped and intrinsic layers are deposited in one plasma chamber, which inevitably impedes sharp dopant profiles at the interfaces due to the contamination from previous deposition process. The cross-contamination between layers is a serious drawback of a single-chamber PECVD system in spite of the advantage of lower initial investment cost for the equipment. In order to resolve the cross-contamination problem in single-chamber PECVD systems, flushing method of the chamber with NH3 gas or water vapor after doped layer deposition process has been used. In this study, a new plasma process to solve the cross-contamination problem in a single-chamber PECVD system was suggested. A single-chamber VHF-PECVD system was used for superstrate type p-i-n a-Si:H solar cell manufacturing on Asahi-type U FTO glass. A 80 MHz and 20 watts of pulsed RF power was applied to the parallel plate RF cathode at the frequency of 10 kHz and 80% duty ratio. A mixture gas of Ar, H2 and SiH4 was used for i-layer deposition and the deposition pressure was 0.4 Torr. For p and n layer deposition, B2H6 and PH3 was used as doping gas, respectively. The deposition temperature was $250^{\circ}C$ and the total p-i-n layer thickness was about $3500{\AA}$. In order to remove the deposited B inside of the vacuum chamber during p-layer deposition, a high pulsed RF power of about 80 W was applied right after p-layer deposition without SiH4 gas, which is followed by i-layer and n-layer deposition. Finally, Ag was deposited as top electrode. The best initial solar cell efficiency of 9.5 % for test cell area of 0.2 $cm^2$ could be achieved by applying the in-situ plasma cleaning method. The dependence on RF power and treatment time was investigated along with the SIMS analysis of the p-i interface for boron profiles.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.252-255
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• 2003

The pulsed laser deposition process modeling is investigated using neural networks based on radial basis function networks and multi-layer perceptron. Two input factors are examined with respect to the PL intensity. In order to minimize the joint confidence region of fabrication process with varying the conditions, D-optimal experimental design technique is performed and photoluminescence intensity is characterized by neural networks. The statistical results were then used to verify the fitness of the nonlinear process model. Based on the results, this modeling methodology can be optimized process conditions for pulsed laser deposition process.

• Carbon letters
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• 제21권
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• pp.16-22
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• 2017

Cobalt was electrodeposited onto chemical vapor deposition (CVD) graphene/Si/$SiO_2$ substrates, during different time intervals, using an electrolyte solution containing a low concentration of cobalt sulfate. The intention was to investigate the details of the deposition process (and the dissolution process) and the resulting magnetic properties of the Co deposits on graphene. During and after electrodeposition, in-situ magnetic measurements were performed using an (AGFM). These were followed by ex situ morphological analysis of the samples with ${\Delta}t_{DEP}$ 30 and 100 s by atomic force microscopy in the non-contact mode on pristine CVD graphene/$SiO_2$/Si. We demonstrate that it is possible to electrodeposit Co onto graphene, and that in-situ magnetic measurements can also help in understanding details of the deposition process itself. The results show that the Co deposits are ferromagnetic with decreasing coercivity ($H_C$) and demonstrate increasing magnetization on saturation ($M_{SAT}$) and electric signal proportional to remanence ($M_r$), as a function of the amount of the electrodeposited Co. It was also found that, after the end of the dissolution process, a certain amount of cobalt remains on the graphene in oxide form (this was confirmed by X-ray photoelectron spectroscopy), as suggested by the magnetic measurements. This oxide tends to exhibit a limited asymptotic amount when cycling through the deposition/dissolution process for increasing deposition times, possibly indicating that the oxidation process is similar to the graphene surface chemistry.

• 한국재료학회지
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• 제1권2호
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• pp.77-85
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• 1991

LPCVD(Low Pressure Chemical Vapor Deposition) System을 이용하여 여러가지 증착 변수에 따른 실리콘 박막의 표면형상에 대해 고찰하였다. 중착압력, 중착온도, 반응기체의 유속에 따라 증착층의 표면형상이 큰 변화를 나타냈으며, 증착압력과 반응기체의 유속이 증가할수록 유효면적이 최대가 되는 증착온도가 증가하였다. 이러한 실험결과는 안정한 핵의 생성률이 최대가 될때 유효표면적이 최대가 된다는 가정으로부터 유도된 식과 일치하는 결과를 나타냈다.