• 한국표면공학회지
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• 제18권1호
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• pp.5-11
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• 1985

Titanium was deposited onto AISI-430 stainless steel by chemical vapor deposition from $TiI_4\;and\;H_2$ gas mixture. Effects of temperature, flow rate of the gas, and $TiI_4$ partial pressure on the deposition rate were thoroughly investigated. The deposition rate of Ti was found to be constant at the given temperature and was increased with increasing temperature. The rate is controlled by surface reaction at the flow rate of gas higher than 500 ml/min, whereas at the flow rate lower than that by diffusional process. It is also interesting to note that the reaction mechanism changes at 1050$^{\circ}C$, at temperatures lower than 1050$^{\circ}C$ the activation energy is 56.9 Kcal/mol, whilst at temperatures higher than that is 8.3 Kcal/mol.

• Journal of Welding and Joining
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• 제26권5호
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• pp.36-42
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• 2008

Carbon nanotube (CNT) aluminum composite coatings were built up through kinetic spraying process. Deposition behavior of CNT aluminum composite on an aluminum 1050 alloy substrate was analyzed based on deposition mechanism of kinetic spraying. The microstructure of CNT aluminum composite coating were observed and analyzed. Also, the electrical resistivity, bond strength and micro-hardness of the CNT aluminum composite coatings were measured and compared to kinetic sprayed aluminum coatings. The CNT aluminum composite coatings have a dense structure with low porosity. Compared to kinetic sprayed aluminum coating, the CNT aluminum composite coatings present lower electrical resistivity and higher micro-hardness due to high electrical conductivity and dispersion hardening effects of CNTs.

• 전기화학회지
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• 제4권4호
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• pp.176-181
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• 2001

본 논문은 계면 전기화학에서의 underpotential deposition (UPD)의 중요성에 초점을 맞추어 UPD의 기본원리에 대하여 다루었다. 우선 underpotential shift와 electrosorption valency에 대한 설명과 함께 UPD의 기본개념을 기술하였다. 다음으로 금속표면에서의 수소발생 또는 금속내부로의 수소흡수 반응 이전에 관찰되는 수소의 UPD를 설명하였고, 특히 금속 표면에서의 흡착위치와 Pd으로의 흡수기구에 대하여 중점적으로 기술하였다. 마지막으로, 계면 전기화학의 여러 분야에서 UPD와 관련된 중요한 인자들을 응용적인 측면에서 간략히 설명하였다.

• 한국표면공학회지
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• 제26권1호
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• pp.3-9
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• 1993

Chemical vapor deposited tungsten films were formed in a cold wall reactor at pressures higher (10~120torr) than those conventionally employed (<1torr). SiH4, in addition to H2, was used as the reduction gas. The effects of pressure and reaction temperature on the deposition rate and morphology of the films were ex-amined under the above conditions. No encroachment or silicon consumption was observed in the tungsten de-posited specimens. A high deposition rate of tungsten and a good step coverage of the deposited films were ob-tained at 40~80 torr and at a temperature range of $360~380^{\circ}C$. The surface roughness and the resistivity of the deposited film increased with pressure. The deposition rate of tungsten increased with the total pressure in the reaction chamber when the pressure was below 40 torr, whereas it decreased when the total pressure ex-ceedeed 40 torr. The deposition rate also showed a maximum value at $360^{\circ}C$ regardless of the gas pressure in the chamber. The results suggest that the deposition mechanism varies with pressure and temperature, the surface reac-tion determines the overall reaction rate and (2) at higher pressures(>40 torr) or temperatures(>36$0^{\circ}C$), the rate is controlled by the dtransportation rate of reactive gas molecules. It was shown from XRD analysis that WSi2 and metastable $\beta$-W were also formed in addition to W by reactions between WF6 and SiH4.

• Nuclear Engineering and Technology
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• 제55권7호
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• pp.2591-2603
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• 2023

Simulating the Corrosion-Related Unidentified Deposit (CRUD) on the surface of fuel assemblies is necessary to predict the axial offset anomaly and the localized corrosion induced by the CRUD during the operation of nuclear power plants. A new CRUD model was developed to predict the formation of the CRUD deposits, considering the deposition and erosion mechanisms. The heat transfer and capillary flow within the CRUD were also considered to evaluate the boiling amount within the CRUD layer. This model predicted a CRUD deposit thickness of 44 ㎛ during a one-cycle operation of the Seabrook nuclear power plant. The CRUD deposition tended to accelerate and decelerate during the simulation, by being related to boiling mechanism on the deposits surface. Additionally, during a three-cycle operation corresponding to the refueling period, the CRUD deposition was saturated at a thickness of 80 ㎛, which was in good agreement with the suggested thickness for CRUD buildupin pressurized water reactors. Surface boiling on the thin CRUD deposits enhanced the acceleration of the deposition, even when the wick boiling properties were not favorable for CRUD deposition. To ensure the certainty of the simulation results, sensitivity analyses were conducted for the porosity, chimney density, and the constants employed in the proposed model of the CRUD.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.145-145
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• 2015

처음 유기물의 인광 발견 이후 Host-dopant 시스템을 이용하여 Emission layer(EML)을 Co-deopsition 하는 방법으로 주로 인광 유기 발광 다이오드를 제작 하였다. [1] co-deposition을 이용해 만든 유기 발광 다이오드에 많은 장점이 있지만, 반대로 소자를 제작하는데 있어서는 많은 문제점을 가지고 있다. [2-4] 이러한 문제점을 개선하기 위하여 co-deposition 대신 non-doped Multi Quantum Well(MQW) 구조를 사용하여 doping 하지 않는 방법을 이용하는 논문들이 보고 되고 있다. Hole, electron, exciton이 MQW 구조를 지나면서, dopant well 안에 갇히게 되고, 그 안에서 다른 layer 간에 energy transfer와, hole-electron leakage가 줄어 들어, 더 효율적인 유기 발광 다이오드를 만들 수 있게 된다. [5-7] 이 연구에서는 CBP를 Potential Barrier로 사용하고, Ir(ppy)3 (Green dopant), Ir(btp)2 (Red dopant) 를 각각 Potential Well로 사용하였고, 두께는 CBP 9nm, dopant 1nm로 하였다. 이러한 소자를 만들고 dopant를 3개의 well에 적당히 배치하여, 각 well에서의 실험적인 발광 량 과, EML 안에서의 발광 mechanism 그리고 각 potential barrier를 줄여가며 dexter, forster에 의한 energy transfer에 대하여 알 수 있었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.29-32
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• 2001

Hydrogen passivation of Si nanocrystals identifies luminescence mechanism indirectly. Si nanocrystallites thin films on p-type (100) Si substrate have been fabricated by pulsed laser deposition technique using a Nd:YAG laser After deposition, Si nanocrystallites thin films have been annealed at 600$^{\circ}C$ and 760$^{\circ}C$ in nitrogen ambient, respectively. Hydrogen passivation was subsequently performed at 500$^{\circ}C$ in forming gas (95 % N$_2$ + 5 % H$_2$) for an 1 hour. We report the photoluminescnece(PL) property of Si thin films by the hydrogen passivation. The luminescence mechanism of Si nanocrystallites has also been investigated.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.135.1-135.1
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• 2014

Silicon nanoparticles can be synthesized in a standard radio-frequency glow discharge system at low temperature (${\sim}200^{\circ}C$). Plasma synthesis of silicon nanoparticles, initially a side effect of powder formation, has become over the years an exciting field of research which has opened the way to new opportunities in the field of materials deposition and their application to optoelectronic devices. Hydrogenated polymorphous silicon (pm-Si:H) has a peculiar microstructure, namely a small volume fraction of plasma synthesized silicon nanoparticles embedded in an amorphous matrix, which originates from the unique deposition mechanism. Detailed discussion on plasma synthesis of silicon nanoparticles, growth mechanism and photovoltaic application of pm-Si:H will be presented.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.115-116
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• 2005

Si nanowires (NWs) were fabricated in vacuum furnace by using a Nd:YAG pulsed laser with the wavelength of 325 nm. Commercial p-type Si wafer is used for target, and any catalytic materials are not used. Scanning electron microscopy (SEM) images indicate that the diameters of Si NWs ranged from 10 to 150 nm. Si NWs have various size and shape with a substrate position inside a furnace, and their morphologic construction is reproducible. The formation mechanism of the NWs is discussed.

• 한국전기전자재료학회논문지
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• 제28권2호
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• pp.104-108
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• 2015

Al thin films were deposited on TiN/Si(100) via metal-organic chemical vapor deposition using N-methylpyrrolidine alane as a precursor. Characterization of the deposited films were investigated with SEM, XRD, ${\alpha}$-step, AFM, 4-point probe. The early stage of Al thin film deposition was analyzed by in-situ surface reflectance measurement with laser and photometer apparatus. The surface reflectance were changed greatly during the initial 30~40 seconds. There were two increases and two decreases in the surface reflectance, thus the sequence of Al films were deposited at 8 significant points of the surface reflectance change. Surface topograph and cross-sectional view of each film were analyzed with SEM. Al films were grown in the complex mechanism of Volmer-Weber and Stranski-Krastanov process.