• Title/Summary/Keyword: Deposition Mechanism

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Field measurement study on snow accumulation process around a cube during snowdrift

  • Wenyong Ma;Sai Li;Xuanyi Zhou;Yuanchun Sun;Zihan Cui;Ziqi Tang
    • Wind and Structures
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    • v.37 no.1
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    • pp.25-38
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    • 2023
  • Due to the complexity and difficulty in meeting the multiphase flow complexity, similarity, and multiscale characteristics, the mechanism of snow drift is so complicated that the snow deposition prediction is still inaccurate and needs to be far improved. Meanwhile, the validation of prediction methods is also limited due to a lack of field-measured data about snow deposition. To this end, a field measurement activity about snow deposition around a cube with time was carried out, and the snow accumulation process was measured under blowing snow conditions in northwest China. The maximum snow depth, snow profile, and variation in snow depth around the cube were discussed and analyzed. The measured results indicated three stages of snow accumulation around the cube. First, snow is deposited in windward, lateral and leeward regions, and then the snow depth in windward and lateral regions increases. Secondly, when the snow in the windward region reaches its maximum, the downwash flow erodes the snow against the front wall. Meanwhile, snow range and depth in lateral regions have a significant increase. Thirdly, a narrow road in the leeward region is formed with the increase in snow range and depth, which results in higher wind speed and reforming snow deposition there. The field measurement study in this paper not only furthers understanding of the snow accumulation process instead of final deposition under complex conditions but also provides an important benchmark for validating prediction methods.

Research of Topography Changes by Artificial Structures and Scattering Mechanism in Yoobu-Do Inter-tidal Flat Using Remote Sensing Data (원격탐사자료를 이용한 인공구조물 건설에 의한 군산 유부도 조간대의 지형변화 및 표면특성에 관한 연구)

  • Xu, Zhen;Kim, Duk-Jin;Kim, Seung Hee
    • Korean Journal of Remote Sensing
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    • v.29 no.1
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    • pp.57-68
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    • 2013
  • Large-scale coastal construction projects, such as land reclamation and dykes, were constructed from the late twentieth century in Yoobu-Do region. Land reclamation combined with the dynamics of tidal currents may have accelerated local sedimentation and erosion resulting in rapid reformation of coastal topography. This study presents the results of the topography changes around Yoobu-Do by large-scale coastal constructions using time-series waterline extraction technique of Landsat TM/ETM+ data acquired from 1998 to 2012. Furthermore, the Freeman-Durden decomposition was applied to fully polarimetric RADARSAT-2 SAR data in order to analyze the scattering mechanisms of the deposited surface. According to the case study, the deposition areas were over 4.5 $km^2$ and distributed in the east, northeast, and west of Yoobu-Do. In the eastern deposition area, it was found that the scattering mechanism was difference from other deposition areas possibly indicating that different types of soil were deposited.

Synthesis of TiO2 Nanowires by Metallorganic Chemical Vapor Deposition (유기금속 화학기상증착법을 이용한 TiO2 나노선 제조)

  • Heo, Hun-Hoe;Nguyen, Thi Quynh Hoa;Lim, Jae-Kyun;Kim, Gil-Moo;Kim, Eui-Tae
    • Korean Journal of Materials Research
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    • v.20 no.12
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    • pp.686-690
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    • 2010
  • $TiO_2$ nanowires were self-catalytically synthesized on bare Si(100) substrates using metallorganic chemical vapor deposition. The nanowire formation was critically affected by growth temperature. The $TiO_2$ nanowires were grown at a high density on Si(100) at $510^{\circ}C$, which is near the complete decomposition temperature ($527^{\circ}C$) of the Ti precursor $(Ti(O-iPr)_2(dpm)_2)$. At $470^{\circ}C$, only very thin (< $0.1{\mu}m$) $TiO_2$ film was formed because the Ti precursor was not completely decomposed. When growth temperature was increased to $550^{\circ}C$ and $670^{\circ}C$, the nanowire formation was also significantly suppressed. A vaporsolid (V-S) growth mechanism excluding a liquid phase appeared to control the nanowire formation. The $TiO_2$ nanowire growth seemed to be activated by carbon, which was supplied by decomposition of the Ti precursor. The $TiO_2$ nanowire density was increased with increased growth pressure in the range of 1.2 to 10 torr. In addition, the nanowire formation was enhanced by using Au and Pt catalysts, which seem to act as catalysts for oxidation. The nanowires consisted of well-aligned ~20-30 nm size rutile and anatase nanocrystallines. This MOCVD synthesis technique is unique and efficient to self-catalytically grow $TiO_2$ nanowires, which hold significant promise for various photocatalysis and solar cell applications.

Research on Acceleration Mechanism of Inflight Particle and Gas Flow Effect for the Velocity Control in Vacuum Kinetic Spray Process (진공상온분사(VKS) 공정에서의 비행입자 가속 기구 및 속도제어를 위한 가스 유량 효과에 관한 연구)

  • Park, Hyungkwon;Kwon, Juhyuk;Lee, Illjoo;Lee, Changhee
    • Korean Journal of Materials Research
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    • v.24 no.2
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    • pp.98-104
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    • 2014
  • Vacuum kinetic spray(VKS) is a relatively advanced process for fabricating thin/thick and dense ceramic coatings via submicron-sized particle impact at room temperature. However, unfortunately, the particle velocity, which is an important value for investigating the deposition mechanism, has not been clarified yet. Thus, in this research, VKS average particle velocities were derived by numerical analysis method(CFD: computational fluid dynamics) connected with an experimental approach(SCM: slit cell method). When the process gas or powder particles are accelerated by a compressive force generated by gas pressure in kinetic spraying, a tensile force generated by the vacuum in the VKS system accelerates the process gas. As a result, the gas is able to reach supersonic speed even though only 0.6MPa gas pressure is used in VKS. In addition, small size powders can be accelerated up to supersonic velocity by means of the drag-force of the low pressure process gas flow. Furthermore, in this process, the increase of gas flow makes the drag-force stronger and gas distribution more homogenized in the pipe, by which the total particle average velocity becomes higher and the difference between max. and min. particle velocity decreases. Consequently, the control of particle size and gas flow rate are important factors in making the velocity of particles high enough for successful deposition in the VKS system.

Role of HCl in Atomic Layer Deposition of TiO2 Thin Films from Titanium Tetrachloride and Water

  • Leem, Jina;Park, Inhye;Li, Yinshi;Zhou, Wenhao;Jin, Zhenyu;Shin, Seokhee;Min, Yo-Sep
    • Bulletin of the Korean Chemical Society
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    • v.35 no.4
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    • pp.1195-1201
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    • 2014
  • Atomic layer deposition (ALD) of $TiO_2$ thin film from $TiCl_4$ and $H_2O$ has been intensively studied since the invention of ALD method to grow thin films via chemical adsorptions of two precursors. However the role of HCl which is a gaseous byproduct in ALD chemistry for $TiO_2$ growth is still intriguing in terms of the growth mechanism. In order to investigate the role of HCl in $TiO_2$ ALD, HCl pulse and its purging steps are inserted in a typical sequence of $TiCl_4$ pulse-purge-$H_2O$ pulse-purge. When they are inserted after the first-half reaction (chemisorption of $TiCl_4$), the grown thickness of $TiO_2$ becomes thinner or thicker at lower or higher growth temperatures than $300^{\circ}C$, respectively. However the insertion after the second-half reaction (chemisorption of $H_2O$) results in severely reduced thicknesses in all growth temperatures. By using the result, we explain the growth mechanism and the role of HCl in $TiO_2$ ALD.

Characteristics Comparison of Prepared Films According to Influence of Adsorption Inhibitor in the Condition of Deposition (PVD증착용 흡착인히비터의 영향에 따른 제작막의 특성 비교)

  • 이찬식;윤용섭;권식철;김기준;이명훈
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2001.11a
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    • pp.67-67
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    • 2001
  • The structure zone model has been used to provide an overview of the relationship between the microstructure of the films deposited by PVD and the most prominent deposition condition.s. B.AMovchan and AV.Demchishin have proposed it firstls such model. They concluded that the general features of the resulting structures could be correlated into three zones depending on $T/T_m$. Here T m is the melting point of the coating material and T is the substrate temperature in kelvines. Zone 1 ($T/Tm_) is dominated by tapered macrograins with domed tops, zone 2 ($O.3) by columnar grains with denser boundaries and zone 3 ($T/T_m>O.5$) by equiaxed grains formed by recrystallization. J.AThomton has extended this model to include the effect of the sputtering gas pressure and found a fourth zone termed zone T(transition zone) consisting of a dense array of poorly defined fibrous grains. R.Messier found that the zone I-T boundary (fourth zone of Thorton) varies in a fashion similar to the film bias potential as a function of gas pressure. However, there has not nearly enough model for explaining the change in morphology with crystal orientation of the films. The structure zone model only provide an information about the morphology of the deposited film. In general, the nucleation and growth mechanism for granular and fine structure of the deposited films are very complex in an PVD technique because the morphology and orientation depend not only on the substrate temperature but also on the energy of deposition of the atoms or ions, the kinetic mechanism between metal atoms and argon or nitrogen gas, and even on the presence of impurities. In order to clarify these relationship, AI and Mg thin films were prepared on SPCC steel substrates by PVD techniques. The influence of gas pressures and bias voltages on their crystal orientation and morphology of the prepared films were investigated by SEM and XRD, respectively. And the effect of crystal orientation and morphology of the prepared films on corrosion resistance was estimated by measuring polarization curves in 3% NaCI solution.

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Investigation of carbon nanotube growth termination mechanism by in-situ transmission electron microscopy approaches

  • Kim, Seung Min;Jeong, Seojeong;Kim, Hwan Chul
    • Carbon letters
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    • v.14 no.4
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    • pp.228-233
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    • 2013
  • In this work, we report in-situ observations of changes in catalyst morphology, and of growth termination of individual carbon nanotubes (CNTs), by complete loss of the catalyst particle attached to it. The observations strongly support the growth-termination mechanism of CNT forests or carpets by dynamic morphological evolution of catalyst particles induced by Ostwald ripening, and sub-surface diffusion. We show that in the tip-growth mode, as well as in the base-growth mode, the growth termination of CNT by dissolution of catalyst particles is plausible. This may allow the growth termination mechanism by evolution of catalyst morphology to be applicable to not only CNT forest growth, but also to other growth methods (for example, floating-catalyst chemical vapor deposition), which do not use any supporting layer or substrate beneath a catalyst layer.

A Study on the electrical condution phenomena and TSC of PVDF thin films fabricated by PVD method (진공증착법에 의해 제조된 PVDF 박막의 전기전도현상과 열자격전류에 관한 연구)

  • 이선우;박수홍;이덕출
    • Journal of the Korean Vacuum Society
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    • v.8 no.3A
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    • pp.187-193
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    • 1999
  • In this study, PVDF thin films which show the excellent piezoelectricity and pyroelectricity, are prepared by PVD (physical vapor deposition) method, and thir electrical conduction phenomena for analyses of the electrical conduction mechanism and TSC (Thermally Stimulated Current) for identification of the behavior of conductive carriers are investigated. As a result of FT-IR(Fourier Transform Infrared Spectroscopy) spectra, the crystalline phase transforms $\alpha$ type into $\beta$ type with increasing electric field. From XRD (X-Ray diffraction) analyses patterns, the degree of crystallinity increases from 49.8% to 67%, as the substrate temperature increases from $30^{\circ}C$ to $80^{\circ}C$. As a result of electrical conduction phenomena, the electrical conduction mechanism of PVDF thin films is identified as ionic conduction mechanism. From TSC analyses, there are three peaks as P1, P2, P3 with increasing temperature, and with increasing substrate temperature, the peak temperature of TSC increases and the peak intensity of TSC decreases.

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Hydrogen sulfide gas sensing mechanism study of ZnO nanostructure and improvement of sensing property by surface modification

  • Kim, Jae-Hyeon;Yong, Gi-Jung
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.450-450
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    • 2011
  • This study reports the hydrogen sulfide gas sensing properties of ZnO nanorods bundle and the investigation of gas sensing mechanism. Also the improvement of sensing properties was also studied through the application of ZnO heterstructured nanorods. The 1-Dimensional ZnO nano-structure was synthesized by hydrothermal method and ZnO nano-heterostructures were prepared by sonochemical reaction. Scanning electron microscopy (SEM) and X-ray diffraction (XRD) spectra confirmed a well-crystalline ZnO of hexagonal structure. The gas response of ZnO nanorods bundle sensor increased with increasing temperature, which is thought to be due to chemical reaction of nanorods with gas molecules. Through analysis of X-ray photoelectron spectroscopy (XPS), the sensing mechanism of ZnO nanorods bundle sensor was explained by well-known surface reaction between ZnO surface atoms and hydrogen sulfide. However at high sensing temperature, chemical conversion of ZnO nanorods becomes a dominant sensing mechanism in current system. In order to improve the gas sensing properties, simple type of gas sensor was fabricated with ZnO nano-heterostructures, which were prepared by deposition of CuO, Au on the ZnO nanorods bundle. These heteronanostructures show higher gas response and higher current level than ZnO nanorods bundle. The gas sensing mechanism of the heteronanostructure can be explained by the chemical conversion of sensing material through the reaction with target gas.

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Electrical Conduction Mechanism in the Insulating TaNx Film (절연성 TaNx 박막의 전기전도 기구)

  • Ryu, Sungyeon;Choi, Byung Joon
    • Korean Journal of Materials Research
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    • v.27 no.1
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    • pp.32-38
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    • 2017
  • Insulating $TaN_x$ films were grown by plasma enhanced atomic layer deposition using butylimido tris dimethylamido tantalum and $N_2+H_2$ mixed gas as metalorganic source and reactance gas, respectively. Crossbar devices having a $Pt/TaN_x/Pt$ stack were fabricated and their electrical properties were examined. The crossbar devices exhibited temperature-dependent nonlinear I (current) - V (voltage) characteristics in the temperature range of 90-300 K. Various electrical conduction mechanisms were adopted to understand the governing electrical conduction mechanism in the device. Among them, the PooleFrenkel emission model, which uses a bulk-limited conduction mechanism, may successfully fit with the I - V characteristics of the devices with 5- and 18-nm-thick $TaN_x$ films. Values of ~0.4 eV of trap energy and ~20 of dielectric constant were extracted from the fitting. These results can be well explained by the amorphous micro-structure and point defects, such as oxygen substitution ($O_N$) and interstitial nitrogen ($N_i$) in the $TaN_x$ films, which were revealed by transmission electron microscopy and UV-Visible spectroscopy. The nonlinear conduction characteristics of $TaN_x$ film can make this film useful as a selector device for a crossbar array of a resistive switching random access memory or a synaptic device.