• Current Photovoltaic Research
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• 제3권2호
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• pp.54-60
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• 2015

ZnSnO thin films were deposited by atomic layer deposition (ALD) process using diethyl zinc ($Zn(C_2H_5)_2$) and tetrakis (dimethylamino) tin ($Sn(C_2H_6N)_4$) as metal precursors and water vapor as a reactant. ALD process has several advantages over other deposition methods such as precise thickness control, good conformality, and good uniformity for large area. The composition of ZnSnO thin films was controlled by varying the ratio of ZnO and $SnO_2$ ALD cycles. The ALD ZnSnO film was an amorphous state. The band gap of ZnSnO thin films increased as the Sn content increased. The CIGS solar cell using ZnSnO buffer layer showed about 18% energy conversion efficiency. With such a high efficiency with the ALD ZnSnO buffer and no light soaking effect, AlD ZnSnO buffer mighty be a good candidate to replace Zn(S,O) buffer in CIGSsolar cells.

• 신재생에너지
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• 제18권1호
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• pp.29-34
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• 2022

The most prevalent cause of solar cell efficiency loss is reduced recombination at the metal electrode and silicon junction. To boost efficiency, a a SiO_X/poly-Si passivating interface is being developed. Poly-Si for passivating contact is formed by various deposition methods (sputtering, PECVD, LPCVD, HWCVD) where the ploy-Si characterization depends on the deposition method. The sputtering process forms a dense Si film at a low deposition rate of 2.6 nm/min and develops a low passivation characteristic of 690 mV. The PECVD process offers a deposition rate of 28 nm/min with satisfactory passivation characteristics. The LPCVD process is the slowest with a deposition rate of 1.4 nm/min, and can prevent blistering if deposited at high temperatures. The HWCVD process has the fastest deposition rate at 150 nm/min with excellent passivation characteristics. However, the uniformity of the deposited film decreases as the area increases. Also, the best passivation characteristics are obtained at high doping. Thus, it is necessary to optimize the doping process depending on the deposition method.

• Corrosion Science and Technology
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• 제22권3호
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• pp.187-192
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• 2023

The use of biomass is increasing as a response to the convention on climate change. In Korea, a method applied to replace fossil fuels is using wood chips in a cogeneration plant. To remove air pollutants generated by burning wood chips, a selective denitrification facility (Selective catalytic reduction, SCR) is installed downstream. However, problems such as ash deposition and descaling of the equipment surface have been reported. The cause is thought to be unreacted ammonia slip caused by ammonia ions injected into the reducing agent and metal corrosion caused by an acidic environment. Element analysis confirmed that ash contained alkali metals and sulfur that could cause catalyst poisoning, leading to an increase in the size of ash particle and deposition. Measurement of the size of ash deposited inside the facility confirmed that the size of ash deposited on the catalyst was approximately three times larger than the size of generally formed ash. Therefore, it was concluded that a reduction in pore area of the catalyst by ash deposition on the surface of the catalyst could lead to a problem of increasing differential pressure in a denitrification facility.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.232-232
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• 2010

Recently light emitting diodes (LEDs) have been expected as the new generation light sources because of their advantages such as small size, long lifetime and energy-saving. GaN, as a wide band gap material, is widely used as a material of LEDs and GaN nanorods are the one of the most widely investigated nanostructure which has advantages for the light extraction of LEDs and increasing the active area by making the cylindrical core-shell structure. Lately GaN nanorods are fabricated by various techniques, such as selective area growth, vapor-liquid-solid (VLS) technique. But these techniques have some disadvantages. Selective area growth technique is too complicated and expensive to grow the rods. And in the case of VLS technique, GaN nanorods are not vertically aligned well and the metal catalyst may act as the impurity. So we just tried to grow the GaN nanorods on Si substrate without catalyst to get the vertically well aligned nanorods without impurity. First we deposited the AlN buffer layer on Si substrate which shows more vertical growth mode than sapphire substrate. After the buffer growth, we flew trimethylgallium (TMGa) as the III group source and ammonia as the V group source. And during the GaN growth, we kept the ammonia flow stable and periodically changed the flow rate of TMGa to change the growth mode of the nanorods. Finally, as the optimization, we changed the various growth conditions such as the growth temperature, the working pressure, V/III ratio and the doping level. And we are still in the process to reduce the diameter of the nanorods and to extend the length of the nanorods simultaneously. In this study, we focused on the shape changing of GaN nanorods with different growth conditions. So we confirmed the shape of the nanorods by scanning electron microscope (SEM) and carried out the Photoluminescence (PL) measurement and x-ray diffraction (XRD) to examine the crystal quality difference between samples. Detailed results will be discussed.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 D
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• pp.1839-1842
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• 1999

We have synthesized carbon nanotubes by thermal chemical vapor deposition of $C_2H_2$ on transition metal-coated silicon substrates. Carbon nanotubes are uniformly synthesized on a large area of the plain Si substrates, different from Previously reported porous Si substrates. It is observed that surface modification of transition metals deposited on substrates by either etching with dipping in a HF solution and/or $NH_3$ pretreatment is a crucial step for the nanotube growth prior to the reaction of $C_2H_2$ gas. We will demonstrate that the diameters of carbon naotubes can be controlled by applying the different transition metals.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 춘계학술발표대회
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• pp.39.2-39.2
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• 2011

With the steady increase in the demand for flexible devices, mainly in display panels, researchers have focused on finding a novel material that have excellent electrical properties even when it is bended or stretched, along with superior mechanical and thermal properties. Graphene, a single-layered two-dimensional carbon lattice, has recently attracted tremendous research interest in this respect. However, the limitations in the growing method of graphene, mainly chemical vapor deposition on transition metal catalysts, has posed severe problems in terms of device integration, due to the laborious transfer process that may damage and contaminate the graphene layer. In addition, to lower the overall cost, a fabrication technique that supports low temperature and low vacuum is required, which is the main reason why solution-based process for graphene layer deposition has become the hot issue. Nonetheless, a direct deposition method of large area, few-layered, and uniform graphene layers has not been reported yet, along with a convenient method of patterning them. Here, we report an evaporation-induced technique for directly depositing few layers of graphene nanosheets with excellent uniformity and thickness controllability on any substrate. The printed graphene nanosheets can be patterned into desired shapes and structures, which can be directly applicable as flexible and transparent electrode. To illustrate such potential, the transport properties and resistivity of the deposited graphene layers have been investigated according to their thickness. The induced internal flow of the graphene solution during tis evaporation allows uniform deposition with which its thickness, and thus resistivity can be tuned by controlling the composition ratio of the solute and solvent.

• 마이크로전자및패키징학회지
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• 제11권2호
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• pp.11-16
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• 2004

전자칩의 고집적화에 의해 전자기기들은 점점 소형화 되어가고 있으며, 이들 기기들에서 발생되는 열은 기기의 성능 저하뿐 아니라 수명을 단축시킨다. 본 연구에서는 효율적인 방열 위한 마이크로 히트싱크 제조를 위하여 멤브레인에 금속(금, 니켈, 구리)은 도금하는 무전해 도금 방법을 이용하였다. 무전해 도금은 폴리카보네이트 멤브레인을 sensitization과 activation 등의 전처리 후, 도금하고자 하는 금속염 수용액에 침적시켜 실행하였다. 무전해 도금에 의하여 제조된 각각의 마이크로피브릴의 열전달 특성과 방열량은 표면적이 가장 큰 니켈 마이크로피브릴에서 가장 우수하게 나타났다.

• International Journal of Precision Engineering and Manufacturing
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• 제9권3호
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• pp.68-71
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• 2008

Transdermal and topical drug delivery with minimal tissue damage has been an area of vigorous research for a number of years. Our research team has initiated the development of an effective method for delivering drug particles across the skin (transdermal) for systemic circulation, and to localized (topical) areas. The device consists of a micro particle acceleration system based on laser ablation that can be integrated with endoscopic surgical techniques. A layer of micro particles is deposited on the surface of a thin metal foil. The rear side of the foil is irradiated with a laser beam, which generates a shockwave that travels through the foil. When the shockwave reaches the end of the foil, it is reflected as an expansion wave and causes instantaneous deformation of the foil in the opposite direction. Due to this sudden deformation, the microparticles are ejected from the foil at very high speeds, and therefore have sufficient momentum to penetrate soft body tissues. We have demonstrated this by successfully delivering cobalt particles $3\;{\mu}m$ in diameter into gelatin models that represent soft tissue with remarkable penetration depth.

• 전자공학회논문지D
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• 제35D권7호
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• pp.72-78
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• 1998

This paper is focused on the fabrication of reliable novel antifuse, which could operate at low voltage along with the improvement in OFF and ON-state properties. The fabricated antifuse consists of Al/BaTi$_{2}$O$_{3}$/SiO$_{2}$/TiW-silicide structure. Through the systematic analyses for bottom metal and the intermetallic insulator, material and electri cproperties were investiaged. TiW-silicide as the bottom electrode had smooth surface with average roughness of 11.angs. at 10X10.mu.m$^{2}$ and was bing kept as-deposited SiO$_{2}$ film stable. Amorphous BaTi$_{2}$O$_{3}$ film as the another insulator was chosen because of its low breakdown strength (2.5MV/cm). breakdown voltage of antifuse is remarkably reduced by using BaTi$_{2}$O$_{3}$ film, and leakage current of that maintained low level due to the SiO$_{2}$ film. Low ON-resistance (46.ohm./.mu.m$^{2}$) and low programming voltage(9.1V) can be obtained in theses antifuses with 220.angs. double insulator layer and 19.6X10$^{-6}$ cm$^{2}$ area, while keeping sufficient OFF-state reliability (less than 1nA).

• 한국초전도ㆍ저온공학회논문지
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• 제22권2호
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• pp.7-11
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• 2020

When rivers and lakes are contaminated with numerous contaminants, usually the contaminants are finally deposited on the sediments of the waterbody. Many clean up technologies have been developed for the contaminated sediments. Among several technologies dredging is one of the best methods because dredging removes all the contaminated sediments from the water and the contaminated sediments can be completely treated with physical and chemical methods. However the most worried phenomenon is suspension of fine particles during the dredging process. The suspended particle can release contaminants into water and resulted in spread of the contaminants and the increase of risk due to the resuspension of the precipitated contaminants such as heavy metals and toxic organic compounds. Therefore the success of the dredging process depends on the prevention of resuspension of fine particles. Advanced dredging processes employ pumping the sediment with water onto a ship and release the turbid water pumped with sediment into waterbody after collection of sediment solids. Before release of the turbid water into lake or river, just a few minutes allowed to precipitate the suspended particle due to the limited area on a dredging ship. However the fine particle cannot be removed by the gravitational settling over a few minutes. Environmental technology such as coagulation and precipitation could be applied for the settling of fine particles. However, the process needs coagulants and big settling tanks. For the quick settling of the fine particles suspended during dredging process magnetic separation has been tested in current study. Magnetic force increased the settling velocity and the increased settling process can reduce the volume of settling tank usually located in a ship for dredging. The magnetic assisted settling also decreased the heavy metal release through the turbid water by precipitating highly contaminated particles with magnetic force.