• 한국전기전자재료학회논문지
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• 제11권8호
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• pp.628-636
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• 1998

LB layers L-$\alpha$-DLPC deposited by LB method were deposited onto n-type silicon wafer as Z-type film. Films made up of 8, 16 layers of lipid with long alkyl chain and the thickness of monolayer and multiayers was determined by ellipsometry. Ut was deposited Ag and Al onto LB layers and silicon wafer for electrode and small electrode exhibit high capacitiance and low lekage current. The C-V curves of the MLS capacitor shows very high saturation value of capacitance. And cross-sectional SEM image of MLD capacitor indicated the presence of pore with Al electrode and we found that the Ag is good for electrode metal.

• 한국전기전자재료학회논문지
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• 제11권7호
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• pp.552-556
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• 1998

Diamond thin films were deposited on Si substrate using $CH_4 and H_2$mixed gas by RF plasma CVD. Prior to deposition, the substrate surface was mechanically scratched with the diamond paste of $3{\mu}m$ to improve the density of nucleation sites. The microstructure of diamond films deposited with methane(0.5%~2%) at the reaction pressure ranging from 20 torr to 50torrr were studied by a scanning electron microscope. It was observed in the deposited diamond films that the nucleation density decreased and crystallinity increased with decreasing the methane concentration. However, the nucleation density and crystallinity were decreased with decreasing the process pressure.

• 한국전기전자재료학회논문지
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• 제20권12호
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• pp.1072-1076
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• 2007

We prepared the Al doped ZnO (AZO) thin film on polyethersulfon (PES) without any substrate heating by Facing Targets Sputtering (FTS) system. FTS system has two different facing targets. One is ZnO doped the content of Al 2 wt% and the other is Zn in order to decrease resistivity. The electrical, structural and optical properties of AZO thin films were investigated. To evaluate the as-deposited thin film properties, we employed four-point probe (CMT-R100nw, Changmin), Surface profiler (Alpha-step, Tencor), UV/VIS spectrometer (HP), X-ray diffractometer (XRD, Rigaku) and Field Emission Scanning Electron Microscopy (FESEM, Hitachi S-4700). As a result, We obtained that AZO thin film deposited on PES substrate at a DC Power of 150 W, working pressure of 1 mTorr and $O_2$ gas flow ratio of 0.2 exhibited the resistivity of $4.2{\times}10^{-4}\;[{\Omega}cm]$ and the optical transmittance of about 85 % in the visible range.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.317-319
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• 2000

We fabricated the QCM with Langmuir-Blodgett(LB) film deposited at the different subphase pH and investigated the resonant frequency response by the injection of organic gas response. In the $\pi$-A isotherms, the monolayer on the air/water interface had different limiting area per molecule and showed more condensed status as increasing the subphase pH. When palmitic acid LB film was deposited on the QCM, the resonant frequency shift was proportional to the deposited layer and had more resonant frequency shift in the case of the higher pH range as expected. In the resonant frequency for the injection of organic gas, it has been improved in the case of LB film fabricated at the lower subphase pH range and dependant upon the molecular weight of organic gas.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 추계학술대회 논문집
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• pp.94-97
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• 1997

We investigated the sheet resistance properties of tungsten nitride thin films deposited by RF and DC sputtering system. It deposited at various conditions that determine the sheet resistance. The properties of the sheet resistance of these films were measured under various conditions. Sheet resistance analysed under the flow rate of the argon gas and contents of nitrogen from nitrogen-argon gas mixtures. We found that these sheet resistance were largely depend on the temperature of substrate, gas flow rate and RF power. Very high and low sheet resistance of tungsten films obtained by DC sputtering. As the increase of contents of nitrogen gas obtained from nitrogen-argon gas mixture, tungsten nitride thin films deposited by the reactive DC sputtering and the sheet resistance of these films were increased.

• 한국전기전자재료학회논문지
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• 제13권2호
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• pp.95-100
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• 2000

For the well-controlled growing in-situ heavily phosphorus doped polycrystalline Si films directly on Si wafer by reduced pressure chemical vapor deposition, a study is made of the two step growth. When in-situ heavily phosphorus doped Si films were deposited directly on Si (100) wafer, crystal structure in the film is not unique, that is, the single crystal to polycrystalline phase transition occurs at a certain thickness. However, the well-controlled polycrtstalline Si films deposited by two step growth grew directly on Si wafers. Moreover, the two step growth, which employs crystallization of grew directly on Si wafers. Moreover, the two step growth which employs crystallization of amorphous silicon layer grown at low temperature, reveals crucial advantages in manipulating polycrystal structures of in-situ phosphorous doped silicon.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1990년도 추계학술대회 논문집
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• pp.81-85
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• 1990

$WSi_{x}$ film deposited on p+ polysilicon by low pressure chemical vapor deposition method were annealed by rapid thermal process, their properties have been investigated by measurements of electrical resistivity and Hall voltage and by analyses of phases and microstructure using X-ray diffraction and SEM technique. The electrical resistivity of the polycides consisting of the tungsten silicide and the p+ polysilicon decreases with the increase in annealing temperature due probably to the increase in grain size. unlike the polycides consisting of the $WSi_{x}$ and n+ polysilicon, however, the Hall voltage of the polycides consisting of $WSi_{x}$ and p+ polysilicon were positive for all specimens annealed as well as the as-deposited one, indicating the majority carrier in $WSi_{x}$. is hole and is independent of the annealing.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.509-512
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• 2001

Aluminum nitride(AIN) thin films were deposited on silicon substrates using RF magnetron sputtering at various deposition conditions and investigated the characteristics. It was used XRD, AES, SEM, and HP-4145B semiconductor parameter analyzer to analysis deposited AIN thin films. The deposition conditions for the good c-axis orientation were 100 W of RF power, 200$^{\circ}C$ of substrate temperature and 15 mTorr of working Pressure. The leakage current density was less then 1.3${\times}$10$\^$-7/ A/$\textrm{cm}^2$. And it was also investigated the etching properties of deposited AIN thin films for application.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.324-327
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• 2000

ZnO(Zinc Oxide) thin films were deposited on glass substrate by Facing Targets Sputtering. Facing Targets Sputtering system can deposit thin films in plasma-free situation and change the sputtering conditions in wide range. The characteristics of ZnO thin films deposited at variation of sputtering conditions films thickness, power and substrate temperature were evaluated by XRD(x-ray diffractometer), ${\alpha}$-step (Tencor). The excellently c-axis oriented ZnO thin films were obtained at sputter pressure ImTorr, power 150W, substrate temperature 200$^{\circ}C$. In these conditions, the rocking curve of ZnO thin films deposited on glass was 3.3$^{\circ}$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.270-273
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• 2000

For the well-preparation of the superconducting wire by electrophoresis, the control of the cracking on the YBCO, BSCCO superconductor deposited on Ag wire in acetone and buthanol solution with PEG(poly-ethylenglycol) was investigated with XRD and SEM analysis. After deposition, drying and heat treatment process, the cracks on the deposited surface of YBCO and BSCCO samples was clearly removed and decreased, which was perpared in suspension with addition of PEG from 1 to 3ml. However, in the case of the addition rate of PEG in acetone suspension was exceeded in 3ml, BSCCO superconductor deposited on Ag wire was slightly melted at 90$0^{\circ}C$ which was the same heat treatment condition of other samples with different additin rate of PEG. In the process of electrophoretic deposition, drying and heat treatment, PEG added into the suspension solution as a binder was very useful to prepare the crack-free thick film-wire of YBCO and BSCCO.