• 대한금속재료학회지
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• 제50권2호
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• pp.107-115
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• 2012

Direct laser melting (DLM) is a powder-based additive manufacturing process to produce parts by layer-by-layer laser melting. As the properties of the manufactured parts depend strongly on the deposited laser-melted bead, deposited layers obtained by the DLM process were characterized in this study. This investigation used a 200 W fiber laser to produce single-line beads under a variety of different energy distributions. In order to obtain a feasible range for the two main process parameters (i.e. laser power and scan rate), bead shapes of single track deposition were intensively investigated. The effects of the processing parameters, such as powder layer thickness and scan spacing, on geometries of the deposited layers have also been analyzed. As a result, minimum energy criteria that can achieve a complete melting have been suggested at the given powder layer thickness. The surface roughnesses of the deposited beads were strongly dependent on the overlap ratio of adjacent beads and on the energy distributions of laser power. Through microstructural analysis and hardness measurement, the morphological and mechanical properties of the deposited layers at various overlapped beads have also been characterized.

• 한국재료학회지
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• 제33권9호
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• pp.372-376
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• 2023

Transparent conductive tungsten (W) doped indium oxide (In₂O₃; IWO) films were deposited at different substrate bias voltage (-V_b) conditions at room temperature on glass substrates by radio frequency (RF) magnetron sputtering and the influence of the substrate bias voltage on the optical and electrical properties was investigated. As the substrate bias voltage increased to -350 V_b, the IWO films showed a lower resistivity of 2.06 × 10^-4 Ωcm. The lowest resistivity observed for the film deposited at -350 V_b could be attributed to its higher mobility, of 31.8 cm²/Vs compared with that (6.2 cm²/Vs) of the films deposited without a substrate bias voltage (0 V_b). The highest visible transmittance of 84.1 % was also observed for the films deposited at the -350 V_b condition. The X-ray diffraction observation indicated the IWO films deposited without substrate bias voltage were amorphous phase without any diffraction peaks, while the films deposited with bias voltage were polycrystalline with a low In₂O₃ (222) diffraction peak and relatively high intensity (431) and (046) diffraction peaks. From the observed visible transmittance and electrical properties, it is concluded that the opto-electrical performance of the polycrystalline IWO film deposited by RF magnetron sputtering can be enhanced with effective substrate bias voltage conditions.

• 한국의류학회지
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• 제7권2호
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• pp.19-25
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• 1983

The purpose of this study was to investigate the effects of laundry variables and additives on the removal of deposited calcium on the cotton fabric. Samples of calcium deposited fabric was made by treating fabric with $CaC1_2$ and $Na_2CO_3$ solution subsequently. The experimental variables were: 1) NaOH concentration ($0.0001\%$, $0.0005\%$, $0.001\%$, $0.005\%$, $0.01\%$) 2) Alkaline builders(sodium carbonate, sodium meta silicate) 3) Sequestering agents(STPP and EDTA concentration: $0.02\%$, $0.04\%$, $0.06\%$, $0.08\%$, $0.1\%$, $0.15\%$, $0.2\%$) 4) Temperatures($25\pm1^{\circ}C$, $40\pm1^{\circ}C$, $60\pm1^{\circ}C$) 5) Edge-abrasion to the removal of deposited calcium on the cotton fabric. The fabric was washed for 15 minutes in a washing machine(Model: Gold Star WP-3007) or Launder-0-meter(40$\~$45 r.p.m., Toyo Rika Instrument Inc.) and rinsed 3 times per every rinsing time. The amount of calcium deposits on the fabrics was determined by EDTA-back titration methods and edge-abrasion was evaluated by ASTM D 3886 method. The results of this study were as follows: 1) pH of surfactant solution(NaOH concentration) did not influence on the removal of deposited calcium on the cotton fabric. 2) Added alkaline builders did not influence on the removal of deposited calcium on the cotton fabric. 3) It was shown that STPP and EDTA were effective to remove deposited calcium. The removal of deposited calcium on the cotton fabric was proportionally increased with increasing concentration of STPP and EDTA. At high concentration, however, the rate was rather decreased with increasing concentration. 4) The temperature of washing solution did not influence on the removal of dedosited calcium on the cotton fabric. 5) As the removal of deposited calcium on the cotton fabric was increased, the rate of edge-abrasion of the fabric was gradually increased.

• 한국주조공학회지
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• 제14권6호
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• pp.530-540
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• 1994

Aluminium-silicon alloy(JIS AC8A) matrix composites reinforced with SiC particles were fabricated by spray-cast forming process, and the microstructure of powders and preforms produced were studied by using an optical and scanning electron microscopy. SiC particles were co-sprayed by mixed phase injection method during the spray casting process. Most of the composite powders formed by this mixed phase injection method exhibit morphology of particle-embedded type, and some exhibits the morphology of particle attached type due to additional attachment of the SiC particles on the surface of the powders in flight. The preforms deposited were resulted in dispersed type microstructure. The pre-solidified droplets and the deposited preform of SiC-reinforced aluminium alloy exhibit finer equiaxed grain size than that of unreinforced aluminium alloy. Eutectic silicons of granular type are crystallized at the corner of the aluminum grains in the preforms deposited, and some SiC particles seem to act as nucleation sites for primary/eutectic silicon during solidification. Such primary/eutectic silicons seem to retard grain growth during the continued spray casting process. It is envisaged from the microstructural observations for the deposited preform that the resultant distribution of SiC injected particles in the Al-Si microsturcture is affected by the amount of liquid phase in the top part of the preform and by the solidification rate of the preform deposited.

• Transactions on Electrical and Electronic Materials
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• 제17권6호
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• pp.351-354
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• 2016

The mechanical properties of ITO films such as adhesion and internal stress are very important for the commercial application of solar cell devices. We report high quality pulsed DC magnetron sputtered ITO films deposited on silicon and glass substrates with low resistivity and high transmittance for various working pressures ranging from 0.96 to 3.0 mTorr. ITO films showed the lowest resistivity of $2.68{\times}10^{-4}{\Omega}{\cdot}cm$, high hall mobility of $46.89cm^2/V.s$, and high transmittance (>85%) for the ITO films deposited at a low working pressure of 0.99 mTorr. The ITO films deposited at a low working (0.96 mTorr) pressure had both amorphous and polycrystalline structures and were found to have compressive stress while the ITO films deposited at higher temperature than 0.99 mTorr was mixture of amorphous and polycrystalline and was found to have tensile stress.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.223-226
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• 2004

MgO thin films were deposited bye-beam evaporation on $SiO_2$/Si wafers for the application of a protective layer in alternating current plasma display panels (AC-PDPs). Three different MgO sources, single crystal, melted polycrystal and sintered polycrystal, were used to find out the change of the properties of MgO protective layer depending on the source type. The properties of MgO thin films such as density, orientation and surface morphology were influenced by the source type. MgO thin films deposited with the melted polycrystal source had the highest density with the highest (100) preferred orientation, whereas the films deposited with the sintered polycrystal source had the lowest density with less preferred orientation. Such a result seems to be originated from the different mobility of adatoms on the surface of the deposited MgO thin films. Different microstructures of MgO thin films deposited even in the same deposition condition were observed depending on the MgO source type, resulting in different discharge characteristics.

• 한국재료학회지
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• 제19권9호
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• pp.499-503
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• 2009

Transparent ITO films were deposited on a polycarbonate substrate with RF magnetron sputtering in a pure argon (Ar) and oxygen ($O_2$) gas atmosphere, and then post deposition electro annealed for 20 minutes in a $4{\times}10^{-1}$ Pa vacuum. Electron bombardment with an accelerating voltage of 100 V increased the substrate temperature to $120^{\circ}C$. XRD analysis of the deposited ITO films did not show any diffraction peaks, while electro annealed films indicated the growth of crystallites on the (211), (222), and (400) planes. The sheet resistance of ITO films decreased from 103 to $82{\Omega}/\square$. The optical transmittance of ITO films in the visible wavelength region increased from 85 to 87%. Observation of the work function demonstrated that the electro-annealing increased the work function of ITO films from 4.4 to 4.6 eV. The electro annealed films demonstrated a larger figure of merit of $3.0{\times}10^{-3}{\Omega}^{-1}$ than that of as deposited films. Therefore, the electro annealed films had better optoelectrical performances than as deposited ITO films.

• 소성∙가공
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• 제29권1호
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• pp.44-48
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• 2020

Aluminum nitride (AlN), as a substrate material in electronic packaging, has attracted considerable attention over the last few decades because of its excellent properties, which include high thermal conductivity, a coefficient of thermal expansion that matches well with that of silicon, and a moderately low dielectric constant. AlN films with c-axis orientation and thermal conductivity characteristics were deposited by using Pulsed Laser Deposition (PLD). The epitaxial AlN films were grown on sapphire (c-Al₂O₃) single crystals by PLD with AlN target and Y₂O₃ doped AlN target. A comparison of different targets associated with AlN films deposited by PLD was presented with particular emphasis on thermal conductivity properties. The quality of AlN films was found to strongly depend on the growth temperature that was exerted during deposition. AlN thin films deposited using Y₂O₃-AlN targets doped with sintering additives showed relatively higher thermal conductivity than while using pure AlN targets. AlN thin films deposited at 600℃ were confirmed to have highly c-axis orientation and thermal conductivity of 39.413 W/mK.

• 한국세라믹학회지
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• 제36권9호
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• pp.901-908
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• 1999

Effects of LPMOCVD process parameters on the properties of TiO2 thin film were investigated. Depositions were made in the range of temperature 300-67$0^{\circ}C$ with various TTIP(Titanium Tetraisopropoxide) concentrations by contrlling bubbler temperature(40-8$0^{\circ}C$) and/or flow rate(30-90 sccm). Post annealing treatments were carried out at 500-80$0^{\circ}C$ range in the air. Films deposited at 40$0^{\circ}C$ have denser morphology than those of films deposited at 50$0^{\circ}C$ and $600^{\circ}C$ due to slower deposition rate. Bubbler temperature can affect on the deposition rate in mass transfer controlled regime such as 50$0^{\circ}C$ or higher but not below 50$0^{\circ}C$ where surface reaction rate becomes important. On the contrary for films deposited above 50$0^{\circ}C$ flow rate can raise deposition rate but eventually saturate it at the 50 sccm and above due to retarded adhesion of decomposed species. But for films deposited at 40$0^{\circ}C$ deposition rate increases stadily with flow rate. As the film becomes more porous A(200) texture can not be developed and AnataselongrightarrowRutile transition kinetics increases.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.22-25
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• 2002

In this paper, we deposited MgO buffer layer on p-type (100)Si substrate in the condition of substrate temperature 400$^{\circ}C$, working gas ratio Ar:O$_2$=80:20, RF Power 50W, working pressure 10mtorr, and the thickness of the film was about 300${\AA}$. Then we deposited Ba$\sub$0.5/Sr$\sub$0.5/TiO$_3$ thin film using RF Magnetron sputtering method on the MgO/Si substrate in various RF power of 25W, 50W, 75W. The film deposited in 50W showed the best crystalline from the XRD measurement. To know the electrical properties of the film, we manufactured Al/BSTMgO(300${\AA}$)/Si/Al structure capacitor. In the result of I-V measurement, The leakage current density of the capacitor was lower than 10$\^$-7/A/$\textrm{cm}^2$ at the range of ${\pm}$150kV/cm. From C-V characteristics of the capacitor, can calculate the dielectric constant and it was 305. Finally we deposited BST thin film on bare Si substrate and (100)MgO substrate in the same deposition condition. From the comparate of the properties of these samples, we found the properties of BST thin film which deposited on MgO/Si substrate were better than on bare Si substrate and similar to on MgO substrate.