• Title/Summary/Keyword: Depletion-mode

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Metabolic Differentiation of Saccharomyces cerevisiae by Ketoconazole Treatment

  • Keum, Young Soo;Kim, Jeong-Han
    • Journal of Applied Biological Chemistry
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    • v.56 no.2
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    • pp.109-112
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    • 2013
  • Azole fungicides are one of the most wide-spread antifungal compounds in agriculture and pharmaceutical applications. Their major mode of action is the inhibition of ergosterol biosynthesis, giving depletion of ergosterol, precursors and abnormal steroids. However, metabolic consequences of such inhibition, other than steroidal metabolitesare not well established. Comprehensive metabolic profiles of Saccharomyces cerevisiae has been presented in this study. Wild type yeast was treated either with glucose as control or azole fungicide (ketoconazole). Both polar metabolites and lipids were analyzed with gas chromatography-mass spectrometry. Approximately over 180 metabolites were characterized, among which 18 of them were accumulated or depleted by fungicide treatment. Steroid profile gives the most prominent differences, including the accumulation of lanosterol and the depletion of zymosterol and ergosterol. However, the polar metabolite profile was also highly different in pesticide treatment. The concentration of proline and its precursors, glutamate and ornithine were markedly reduced by ketoconazole. Lysine and glycine level was also decreased while the concentrations of serine and homoserine were increased. The overall metabolic profile indicates that azole fungicide treatment induces the depletion of many polar metabolites, which are important in stress response.

Zero Cerenkov Radiation Angle Effect in Optical Parametric Amplification in the Cerenkov-idler Configuration (Cerenkov-idler configuration 광 매개증폭에서의 0° 체렌코프 복사각도 효과)

  • Suh, Zung-Shik
    • Journal of the Institute of Electronics and Information Engineers
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    • v.51 no.1
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    • pp.225-232
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    • 2014
  • Optical parametric amplification has been analyzed for the Cerenkov-idler configuration in planar waveguides. The coupled-mode theory is employed for the analysis. The coupled-mode equations are derived and the approximate analytic solution is obtained for no pump depletion. From the analytic solution, it is shown that the signal power gain can be enhanced as the Cerenkov radiation angle of the idler approaches to zero. The numerical example is also shown for the effect of the Cerenkov radiation angle approaching zero.

Low Power Consumption Scan Driver Using Depletion-Mode InGaZnO Thin-Film Transistors (공핍 모드 InGaZnO 박막 트랜지스터를 이용한 저소비전력 스캔 구동 회로)

  • Lee, Jin-Woo;Kwon, Oh-Kyong
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.49 no.2
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    • pp.15-22
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    • 2012
  • A low power consumption scan driver using depletion-mode n-type InGaZnO thin-film transistors is proposed. The proposed circuit uses 2 clock signals and generates the non-overlap output signals without the additional masking signals and circuits. The power consumption of the proposed circuit is decreased by reducing the number of the clock signals and short circuit current. The simulation results show that the proposed circuit operates successfully when the threshold voltage of TFT is varied from -3.0V to 1.0V. The proposed scan driver consumes 4.89mW when the positive and negative supply voltage is 15V and -5V, respectively, and the operating frequency is 46KHz on the XGA resolution panel.

Fabrication of a Depletion mode n-channel GaAs MOSFET using $Al_2O_3$ as a gate insulator ($Al_2O_3$ 절연막을 게이트 절연막으로 이용한 공핍형 n-채널 GaAs MOSFET의 제조)

  • Jun, Bon-Keun;Lee, Suk-Hyun;Lee, Jung-Hee;Lee, Yong-Hyun
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.37 no.1
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    • pp.1-7
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    • 2000
  • In this paper, we present n-channel GaAs MOSFET having $Al_2O_3$ as gate in insulator fabricated on a semi-insulating GaAs substrate. 1 ${\mu}$m thick undoped GaAs buffer layer, 1500 ${\AA}$ thick n-type GaAs, undoped 500 ${\AA}$ thick AlAs layer, and 50 ${\AA}$ GaAs caplayer were subsequently grown by molecular beam epitaxy(MBE) on (100) oriented semi-insulating GaAs substrate oxidized. When it was wet oxidized, AlAs layer was fully converted $Al_2O_3$. The I-V, $g_m$, breakdown charateristics of the fabricated GaAs MOSFET showed that wet thermal oxidation of AlAs/GaAs epilayer/S${\cdot}$I GaAs was suitable in realizing depletion mode GaAs MOSFET.

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Size Distribution Characteristics of Particulate Mass and Ion Components at Gosan, Korea from 2002 to 2003

  • Han J.S.;Moon K.J.;Lee S.J.;Kim J.E.;Kim Y.J.
    • Journal of Korean Society for Atmospheric Environment
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    • v.21 no.E1
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    • pp.23-35
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    • 2005
  • Size distribution of particulate water-soluble ion components was measured at Gosan, Korea using a micro-orifice uniform deposit impactor (MOUDI). Sulfate, ammonium, and nitrate showed peaks in three size ranges; Sulfate and ammonium were of dominant species measured in the fine mode ($D_{p} < 1.8 {\mu}m$). One peak was observed in the condensation mode ($0.218\sim0.532{\mu}m$), and the other peak was obtained in the droplet mode ($0.532\sim1.8{\mu}m$). Considering the fact that the equivalent ratios of ammonium to sulfate ranged from 0.5 to 1.0 in these size ranges, it is inferred that they formed sufficiently neutralized compounds such as ($NH_{4})_{2}SO_{4} and (NH_{4})_{3}H(SO_{4})_{2}$ during the long-range transport of anthropogenic pollutants. On the other hand, nitrate was distributed mainly in the coarse mode ($3.1\sim6.2{\mu}m$) combined with soil and sea salt. Two sets of MOUDI samples were collected in each season. One sample was collected when the concentrations of criteria air pollutants were relatively high, but the other represented relatively clean air quality. The concentrations of sulfate and ammonium particles in droplet mode were the highest in winter and the lowest in summer. When the air quality was bad, the increase of nitrate was observed in the condensation mode ($0.218\sim0.282{\mu}m$). It thus suggests that the nitrate particles were produced through gas phase reaction of nitric acid with ammonia. Chloride depletion was remarkably high in summer due to the high temperature and relative humidity.

NUCLEAR DATA UNCERTAINTY AND SENSITIVITY ANALYSIS WITH XSUSA FOR FUEL ASSEMBLY DEPLETION CALCULATIONS

  • Zwermann, W.;Aures, A.;Gallner, L.;Hannstein, V.;Krzykacz-Hausmann, B.;Velkov, K.;Martinez, J.S.
    • Nuclear Engineering and Technology
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    • v.46 no.3
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    • pp.343-352
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    • 2014
  • Uncertainty and sensitivity analyses with respect to nuclear data are performed with depletion calculations for BWR and PWR fuel assemblies specified in the framework of the UAM-LWR Benchmark Phase II. For this, the GRS sampling based tool XSUSA is employed together with the TRITON depletion sequences from the SCALE 6.1 code system. Uncertainties for multiplication factors and nuclide inventories are determined, as well as the main contributors to these result uncertainties by calculating importance indicators. The corresponding neutron transport calculations are performed with the deterministic discrete-ordinates code NEWT. In addition, the Monte Carlo code KENO in multi-group mode is used to demonstrate a method with which the number of neutron histories per calculation run can be substantially reduced as compared to that in a calculation for the nominal case without uncertainties, while uncertainties and sensitivities are obtained with almost the same accuracy.

SPICE Implementation of GaAs D-Mode and E-Mode MESFET Model (GaAs D-Mode와 E-Mode MESFET 모델의 SPICE 삽입)

  • 손상희;곽계달
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.24 no.5
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    • pp.794-803
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    • 1987
  • In this paper, the SPICE 2.G6 JFET subroutine and other related subroutines are modified for circuit simulation of GaAs MESFET IC's. The hyperbolic tangent model is used for the drain current-voltage characteristics of GaAs MESFET's and derived channel-conductance and drain-conductance model from the above current model are implemented into small-signal model of GaAs MESFET's. And, device capacitance model which consider after-pinch-off state are modified, and device charge model for SPICE 2G.6 are proposed. The result of modification is shown to be suitable for GaAs circuit simulator, showing good agreement with experimetal results. Forthermore the DC convergence of this paper is better than that of SPICE 2.G JFET subroutine. GaAs MESFET model in this paper is applied for both depletion mode GaAs MESFET and enhancement-mode GaAs MESFET without difficulty.

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Modeling of non-isothermal CO2 particle leaked from pressurized source: I. Behavior of single bubble

  • Chang, Daejun;Han, Sang Heon;Yang, Kyung-Won
    • Ocean Systems Engineering
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    • v.2 no.1
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    • pp.17-31
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    • 2012
  • This study investigated the behavior of a non-isothermal $CO_2$ bubble formed through a leak process from a high-pressure source in a deep sea. Isenthalpic interpretation was employed to predict the state of the bubble just after the leak. Three modes of mass loss from the rising bubble were demonstrated: dissolution induced by mass transfer, condensation by heat transfer and phase separation by pressure decrease. A graphical interpretation of the last mode was provided in the pressure-enthalpy diagram. A threshold pressure (17.12 bar) was identified below which the last mode was no longer present. The second mode was as effective as the first for a bubble formed in deep water, leading to faster mass loss. To the contrary, only the first mode was active for a bubble formed in a shallow region. The third mode was insignificant for all cases.

Effect of Subthreshold Slope on the Voltage Gain of Enhancement Mode Thin Film Transistors Fabricated Using Amorphous SiInZnO

  • Lee, Sang Yeol
    • Transactions on Electrical and Electronic Materials
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    • v.18 no.5
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    • pp.250-252
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    • 2017
  • High-performance full swing logic inverters were fabricated using amorphous 1 wt% Si doped indium-zinc-oxide (a-SIZO) thin films with different channel layer thicknesses. In the inverter configuration, the threshold voltage was adjusted by varying the thickness of the channel layer. The depletion mode (D-mode) device used a TFT with a channel layer thickness of 60 nm as it exhibited the most negative threshold voltage (-1.67 V). Inverters using enhancement mode (E-mode) devices were fabricated using TFTs with channel layer thicknesses of 20 or 40 nm with excellent subthreshold slope (S.S). Both the inverters exhibited high voltage gain values of 30.74 and 28.56, respectively at $V_{DD}=15V$. It was confirmed that the voltage gain can be improved by increasing the S.S value.

A Level Shifter Using Aluminum-Doped Zinc Tin Oxide Thin Film Transistors with Negative Threshold Voltages

  • Hwang, Tong-Hun;Yang, Ik-Seok;Kim, Kang-Nam;Cho, Doo-Hee;KoPark, Sang-Hee;Hwang, Chi-Sun;Byun, Chun-Won;Kwon, Oh-Kyong
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.464-465
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    • 2009
  • A new level shifter using n-channel aluminum-doped zinc tin oxide (AZTO) thin film transistors (TFTs) was proposed to integrate driving circuits on qVGA panels for mobile display applications. The circuit used positive feedback loop to overcome limitations of circuits designed with oxide TFTs which is depletion mode n-channel TFTs. The measured results shows that the proposed circuit shifts 10 V input voltage to 20 V output voltage and its power consumption is 0.46 mW when the supply voltage is 20 V and the operating frequency is 10 kHz.

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