• 한국전기전자재료학회논문지
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• 제18권4호
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• pp.350-356
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• 2005

We report the space charge and the surface potential of the interface between metal and copper(Ⅱ)-phthalocyanine(CuPc) thin films by measuring the microwave reflection coefficients S/sub 11/ of thin films using a near-field scanning microwave microscope(NSMM). CuPc thin films were prepared on Au and Al thin films using a thermal evaporation method. Two kinds of CuPc thin films were prepared by different substrate heating conditions; one was deposited on preheated substrate at 150。C and the other was annealed after deposition. The microwave reflection coefficients S/sub 11/ of CuPc thin films were changed by the dependence on grain alignment due to heat treatment conditions and depended on thickness of CuPc thin films. Electrical conductivity of interface between metal and organic CuPc was changed by the space charge of the interface. By comparing reflection coefficient S/sub 11/ we observed the electrical conductivity changes of CuPc thin films by the changes of surface potential and space charge at the interface.

• 한국전기전자재료학회논문지
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• 제30권12호
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• pp.794-799
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• 2017

Ga-doped ZnO (GZO) films were deposited by an RF magnetron sputtering method on glass substrates using ZnO as a target containing 5 wt% $Ga_2O_3$ powder (for Ga doping). The structural, electrical, and optical properties of the GZO thin films were investigated as a function of the substrate temperatures. The deposition rate decreased with increasing substrate temperatures from room temperature to $350^{\circ}C$. The films showed typical orientation with the c-axis vertical to the glass substrates and the grain size increased up to a substrate temperature of $300^{\circ}C$ but decreased beyond $350^{\circ}C$. The resistivity of GZO thin films deposited at the substrate temperature of $300^{\circ}C$ was $7{\times}10^{-4}{\Omega}cm$, and it showed a dependence on the carrier concentration and mobility. The optical transmittances of the films with thickness of $3,000{\AA}$ were above 80% in the visible region, regardless of the substrate temperatures.

• 한국초전도ㆍ저온공학회논문지
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• 제19권3호
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• pp.13-17
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• 2017

We investigated the effect of self-assembled BSO nano-defects as pinning centers in BSO-added GdBCO films when the thicknesses of films were varied. 3.5 vol. % BSO-added GdBCO films with varying thicknesses from 200 nm to 1000 nm were deposited on $SrTiO_3$ (STO) substrate by using pulsed laser deposition (PLD) process. For the films with thicknesses of 400 nm and 600 nm, 'anomaly shoulders' in $J_c-H$ characteristic curves were observed near the matching field. The anomaly shoulders appeared in the field dependence of $J_c$ may be attributed to the existence of double pinning mechanisms in thin films. The fit to the pinning force density as a function of reduced field h ($H/H_{irr}$) using the Dew-Hughes' scaling law shows that both the 400 nm- and the 600 nm-thick films have double pinning mechanisms while the other films have a single pinning mechanism. These results indicate that the self-assembled property of BSO result in different role as pinning centers with different thickness.

• 한국전기전자재료학회논문지
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• 제17권7호
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• pp.738-746
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• 2004

Recently zinc oxide(ZnO) has emerged as one of the most promising transparent conducting films with a strong demand of low cost and high performance optoelectronic devices, ZnO film has many advantages such as high chemical and mechanical stabilities, and abundance in nature. In this paper, in order to obtain the excellent transparent conducting film with low resistivity and high optical transmittance for Plasma Display Pannel(PDP), aluminium doped zinc oxide films were deposited on Corning glass substrate by dc magnetron sputtering method. The effects of the discharge power and doping amounts of $Al_2$$O_3$ on the electrical and optical properties were investigated experimentally. Particularly in order to lower the electrical resistivity, positive and negative bias voltages were applied on the substrate, and the effect of bias voltage on the electrical properties of ZnO:Al thin film were also studied and discussed. Films with lowest resistivity of $4.3 \times 10 ^{-4} \Omega-cm$ and good transmittance of 91.46 % have been achieved for the films deposited at 1 mtorr, $400^{\circ}C$, 40 W, Al content of 2 wt% with a substrate bias of +30 V for about 800 nm in film thickness.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1993년도 하계학술대회 논문집 B
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• pp.1280-1282
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• 1993

We investigated theoretically the current-voltage characteristics of resonant tunneling diodes with a single quantum well structure, using a self-consistent method. This method is a numerical analysis which is able to include the effects of the undoped spacer layer and the band bending by charge accumulation and depletion on the contact layers, so that it is better suited to explain experimental results. The structure used is an $Al_{0.5}Ga_{0.5}$As/GaAs/$Al_{0.5}Ga_{0.5}As$ single quantum well. In this work, we estimate the theoretical current-voltage characteristics, and then, the dependence of the current-voltage curves on the thickness of undoped spacer layers.

• Bulletin of the Korean Chemical Society
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• 제23권1호
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• pp.71-74
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• 2002

The apparent barrier height for charge transfer through an interfacial water layer between a Pt/Ir tip and a gold surface has been measured using STM technique. The average thickness of the interfacial water layer inside an STM junction was controlled by the amount of moisture. A thin water layer on the surface was formed when relative humidity was in the range of 10 to 80%. In such a case, electron tunneling through the thin water layer became the majority of charge transfers. The value of the barrier height for the electron tunneling was determined to be 0.95 eV from the current vs. distance curve, which was independent of the tip-sample distance. On the other hand, the apparent barrier height for charge transfer showed a dependence on tip-sample distance in the bias range of 0.1-0.5 V at a relative humidity of approximately 96%. The non-exponentiality for current decay under these conditions has been explained in terms of electron tunneling and electrochemical processes. In addition, the plateau current was observed at a large tip-sample distance, which was caused by electrochemical processes and was dependent on the applied voltage.

• 한국음향학회지
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• 제21권8호
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• pp.757-765
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• 2002

본 논문은 해석과 실험을 통하여 구형 압전 변환기의 점대칭 방사모드 진동 특성을 규명하는 것을 목적으로 한다. 반경 방향 좌표와 시간의 함수인 반경 방향 변위와 전기 퍼텐셜로 표현되는 지배방정식을 구성한다. 역학적 경계조건과 전기적 경계조건을 적용하여 방사 진동의 특성방정식을 유도한다. 이 식을 이용하여 압전 고유진동수를 계산하고, 그 결과를 측정 결과와 비교한다. 수치계산을 통하여 압전 공진과 탄성 공진의 차이, 구형 압전체의 반경 및 두께에 따른 고유진동수 등을 고찰한다. 그 결과 1차 방사모드의 고유진동수 크기는 압전현상으로 인해 작아지며 구형의 곡률 반지름이 커짐에 따라 지수함수적으로 작아지는 것을 알게 되었다.

• 대한방사선기술학회지:방사선기술과학
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• 제14권1호
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• pp.49-60
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• 1991

Thermoluminescent phosphors, which are now being used widely in radiation dosimetry, have an excellent sensitivity to ionizing radiation. In this study, thermoluminescent phosphors of $CaSO_4$ : Mn, $CaSO_4$ : Dy and $CaSO_4$ : Tm are prepared and their physical properties are investigated by measuring the trapping parameters and their luminescent spectra. By considering the sensitivity to X-ray and fading characteristics, $CaSO_4$ : Dy is most adequate to imaging plate. The imaging plate are prepared by coating the $CaSO_4$ : Dy powder on the Al substrate and its dose dependence is linear within the range of 40 mGy-20 Gy X-ray. The sensitivity of imaging plate depends linearly on the thickness of coated phosphor layer up to $35\;mg/cm^2$ and is independent on the grain size of the phosphor in the range of $70{\sim}250\;{\mu}m$. By photographing the imaging plate, X-ray images of the test object are obtained and better than those of X-ray films.

• 한국연소학회지
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• 제17권1호
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• pp.22-29
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• 2012

The detachment stability characteristics of syngas $H_2$/CO jet attached flames were studied. The flame stability was observed while varying the syngas fuel composition, coaxial nozzle diameter and fuel nozzle rim thickness. The detachment stability limit of the syngas single jet flame was found to decrease with increasing mole fraction of carbon monoxide in the fuel. In hydrogen jet flames with coaxial air, the flame detachment stability was found to be independent of the coaxial nozzle diameter. However, velocities of appearance of liftoff and blowout velocities of lifted flames have dependence. At lower fuel velocity range, the critical coaxial air velocity leading to flame detachment increases with increasing fuel jet velocity, whereas at higher fuel velocity range, it decreases. This increasing-decreasing non-monotonic trend appears for all $H_2$/CO syngas compositions (50/50~100/0% $H_2$/CO). To qualitatively understand the flame behavior near the nozzle rim, $OH^*$ chemiluminescence imaging was performed near the detachment limit conditions. For all fuel compositions, local extinction on the rim is observed at lower fuel velocities(increasing stability region), while local flame extinction downstream of the rim is observed at higher fuel velocities(decreasing stability region). Maximum values of the non-monotonic trends appear to be identical when the fuel jet velocity is normalized by the critical fuel velocity obtained in the single jet cases.

• 대한화학회지
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• 제18권6호
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• pp.391-399
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• 1974

금속 코발트의 부식과 부동화현상들을 전기화학적 실험방법들을 써서 연구하였다. Tafel slope, Flade potential의 pH의존도, 부식속도의 반응역학적 데이타등으로 부터 코발트와 붕산염완충용액 사이 계면에서 일어나는 부식과 부동화 과정들의 메카니즘을 도출하였다. 금속표면에 흡착된 히드록실기가 표면산화와 부동화막의 형성에 참여하는 것으로 나타났다. 표면막의 성장속도에 관한 데이타로 보아 부동화피막은 "전기장에 의한-이온-이동" 과정에 의하여 성장하는 것으로 보인다. 측정된 표면막의 두께는 약 10${\AA}$에서 20${\AA}$에 이르렀다.