• Transactions of the Korean hydrogen and new energy society
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• v.5 no.2
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• pp.59-63
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• 1994

Thermally evaporated Pd films on substrate were hydrogenated upto 1 bar of hydrogen gas at room temperature. Thickness dependence on hydrogenation on Pd film is examined in the thickness range between $60{\AA}$ and $800{\AA}$. Hydrogenation kinetics of thinner films(thinner than $500{\AA}$) and that of thicker films are different. Thin film(thickness < $200{\AA}$, substrate temp. = RT) showed recrystallization due to hydrogen induced heat. Hydrogen was absorbed by chemisorption process in ${\alpha}$ phase of thinner films, and diffusion process in ${\alpha}'$ phase of thicker films respectively.

• Progress in Superconductivity and Cryogenics
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• v.18 no.4
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• pp.1-4
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• 2016

We investigated the relation between the Cu-O bond length and the superconducting properties of $BaSnO_3$ (BSO)-added $GdBa_2Cu_3O_{7-x}$ (GdBCO) thin films by using extended x-ray absorption fine structure (EXAFS) spectroscopy. 4 wt.% $BaSnO_3$ (BSO) added $GdBa_2Cu_3O_{7-x}$ (GdBCO) thin films with varying thickness from $0.2{\mu}m$ to $1.0{\mu}m$ were fabricated by using pulsed laser deposition (PLD) method. The transition temperature ($T_c$) and the residual resistance ratio (RRR) of the GdBCO films increased with increasing thickness up to $0.8{\mu}m$, where the crystalline BSO has the highest peak intensity, and then decreased. This uncommon behaviors of $T_c$ and RRR are likely to be created by the addition of BSO, which may change the ordering of GdBCO atomic bonds. Analysis from the Cu K-edge EXAFS spectroscopy showed an interesting thickness dependence of ordering behavior of BSO-added GdBCO films. It is noticeable that the ordering of Cu-O bond and the transition temperature are found to show opposite behaviors in the thickness dependence. Based on these results, the growth of BSO seemingly have evident effect on the alteration of the local structure of GdBCO film.

• Journal of the Korean Vacuum Society
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• v.6 no.S1
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• pp.70-74
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• 1997

The study of the thickness dependence of the electron energy structure of Fe, Ni, Ti and Zr sublayers in Ni/Ti and Fe/Zr multilayers by using the experimental and computer simulated optical spectroscopy has been performed. A series of Ni/Ti and Fe/Ze multiayered films (MLF) with a bilayer period of 0.5 - 30 nm and constant (Ni/Ti) / different (Fe/Zr) sublayer thickness ratios were prepared by using computer-controlled double-pair target face-to-face sputtering onto a glass substrate at room temperature (RT) Computer simulation of the resulting optical properties of these MLF was carried out by solving of multireflection problem with a matrix method assuming either "sharp" interfaces resulting in rectangular depth profiles of the components or "mixed" (alloy-like) interfaces of variable thickness between pure-metal sublayers. Optical constants of pure bulk metals as well as equiatomic alloy interfaces were employed in these simulations. It was shown that the difference between experimental and simulated optical properties of the investigated MLF increases with decrease in sublayer thickness. This result allows to conclude that the electronic structures of sublayers below 4-5 nm thickness in mlf differ from the corresponding bulk metals.ponding bulk metals.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.278-279
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• 2005

The crystallization of FePt/MgO(100) magnetic thin films of various thicknesses has been studied using synchrotron x-ray scattering, atomic force microscope, and vibrating sample magnetometer. In film with a 500-${\AA}$-thick, ordered (fct) FePt phase was dominantly crystallized into perpendicular (001) grains keeping the magnetically easy c-axis normal to the film plane during annealing. In film with a 812-${\AA}$-thick, however, longitudinal (110) grains keeping the c-axis parallel to the film plane were grown on top of the perpendicular (001) grains. The behavior of the magnetic properties was consistent with the thickness dependence of the crystallization. We attribute the thickness dependence of the crystallization to the substrate effect, which prefers the growth of the c-axis oriented perpendicular grains near the film/substrate interfacial area.

• Journal of the Korean Magnetics Society
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• v.14 no.1
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• pp.25-28
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• 2004

The dependence of sensitivity, MR ratio, coercivity (Hc) and switching fields as a function of thickness of each magnetic layers(Co, NiFe and Cu) were investigated in pseudo spin valves with a structure of Ta/NiFe/Cu/Co. As measured results dependence of the thickness of each magnetic layer, we obtained MR ratio of 7.26% for Ta(4 nm)/NiFe(7.5 nm)/Cu(3 nm)/Co(5 nm) pseudo spin valves. Also, we could control properties of magnetoresistance for independent magnetization courses of each magnetic layer. Especially, we found that we could control coercivity as constant MR ratio dependence of Co thickness.

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1445-1447
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• 1994

This paper deals with the edge effect in thin insulating films, focusing on their dependence on film thickness, so we derived a simple mathematical form which depicts that reducing film thickness lowers the field at the electrode edge. we expect that this result may be suitable to problems with multi level insulating films.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.10
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• pp.620-624
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• 2016

Ferroelectric $Pb(Zr_{0.52}Ti_{0.48})O_3$ (PZT) films were deposited on SrTiO3(100) substrate by using conductive $SrRuO_3$ films as underlayer and their structural and ferroelectric properties were investigated. PZT films were grown in (00l) orientation on well lattice-matched pseudo-cubic $SrRuO_3$ films. Thickness dependence of ferroelectric and electrical properties of PZT films was investigated. PZT film with 400 nm thickness showed a remanent polarization ($P_r$) of $29.0{\mu}C/cm^2$ and coercive field ($E_c$) of 83 kV/cm, and $P_r$ decreased and $E_c$ increased with thickness reduction. The dielectric constant for PZT films showed gradual decrease with thickness reduction. Breakdown field of PZT films did not show the thickness dependence and displayed as high value as 1 MV/cm.

• Journal of the Korean Magnetics Society
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• v.11 no.5
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• pp.196-201
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• 2001

The dependence of CoFe interfacial layer thickness and plasma oxidation condition on tunneling magnetoresistance (TMR) in Ta/NiFe/FeMn/NiFe/Al$_2$O$_3$/NiFe/Ta tunnel junctions was investigated. As the CoFe layer thickness increases, TMR ratio rapidly increases to 13.7 % and decreases with further increase of the CoFe layer thickness. The increase of TMR with the CoFe thickness up to 25 was thought to be due mails to the high spin-polarization of CoFe. The maximum MR of 15.3% was obtained in the Si(100)/Ta(50 )/NiFe(60 )/FeMn(250 )/NiFe(70 )/Al$_2$O$_3$/NiFe(150 )/Ta(50 ) magnetic tunnel junction with a 16 Al oxidized for 40 sec using a Ar/O$_2$ (1:4) mixture gas.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1677-1679
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• 2007

Thickness dependent morphology of ZnO films was studied, and ZnO can be intentionally grown into amorphous phase by reducing the thickness. The top-gate amorphous ZnO TTFTs with rather high field-effect mobilities and on/off current ratios were effectively fabricated.

• KIEE International Transactions on Electrophysics and Applications
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• v.2C no.6
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• pp.281-286
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• 2002

The temperature accelerated dielectric breakdown strength of on-wafer low-k dielectric polymer films with thicknesses ranging from 94 nm to 1141 nm is investigated by using the current-voltage characteristic measurements with MIS structures. The temperature dependence of dielectric strength is demonstrated to be Arrhenious for all thicknesses. However, the activation energy is found to be strongly thickness dependent. It follows an exponential relationship rather than being a single value, i.e., the activation energy increase significantly as film thickness increases for the thickness below 500 nm, but it is almost constant for the thickness above 500 nm. This relationship suggests that the change of the activation energy corresponding to different film thickness is closely related to the temperature dependence of the electron trapping/detrapping process in polymer thin films, and is determined by both the trapping rate and the detrapping rate. Thinner films need less energy to form a conduction path compared to thicker films. Hence, it leads to smaller activation energy in thinner films, and the activation energy increases with the increase in film thickness. However, a nearly constant value of the activation energy is achieved above a certain range of film thickness, indicating that the trapping rate and detrapping rate is almost equal and eventually the activation energy approaches the value of bulk material.