• Korean Journal of Optics and Photonics
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• v.6 no.4
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• pp.302-309
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• 1995

We desinged a lattice-matched InGaAs/lnGaAsP quantum well laser that lases at $1.55{\mu}m$ at room temperature, and calculated the gain spectrum as a function of injected carrier density and temperature. For the calculation of band structures and momentum matrix elements, we used a transfer JIlatrix method based on a block-diagonalized 8x8 second-order Ii$.$ P Hamiltonian. This lattice-matched quantum well lases in transverse electric mode. As the temperature increases, the lasing wavelength gets longer, the transparency carrier density increases, and the differential gain is reduced. The temperature dependence of the gain spectrum comes from the temperature dependence of the band structure and that of the Fermi function, and the latter contributes dominantly.nantly.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.6
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• pp.396-399
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• 2015

We analyzed the correlation between breakdown voltage(BDV) of liquid nitrogen(LN2) and factors. The chosen factors affecting the breakdown are the diameter of electrode, gap length, temperature of LN2, and pressure of LN2. The BDV of LN2 was increased with increasing the diameter, the gap length and the pressure. And The BDV of LN2 was increased with decreasing the temperature. However, correlation coefficient was different from each other depending on the situation. The BDV exhibited a very high correlation coefficient of 0.92227 to dependence on the diameter. And a very high correlation coefficient of 0.94980 to dependence on the pressure under sphere(D 7.5 mm)-plane electrode. When the pressure is applied, sphere-plane electrode is the correlation coefficient was higher than that of the needle-plane electrode. It shows the dependence of a temperature coefficient of -0.758290 ~ -0.39946 under needle-plane electrode.

• Journal of the Korean Ceramic Society
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• v.26 no.6
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• pp.802-810
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• 1989

The temperature dependence of piezoelectric strain constant and the electric field induced strain are investigated as a function of PT in 0.5[xPT-(1-x)PZ]-0.5PNN ceramics. The piezoelectric strain constant d31 has the highest value(360$\times$10-12m/V) at PT=0.68. The temperature dependence of d31 is improved as Curie temperature of sample is increased, and the electric field dependence of induced strain is decreased with the coercive field increased. This ceramic system shows both piezoelectric effect and electrostrictive effect under the applied electric field. The piezoelectric of tetragonal phase is higher than that of rhombohedral phase, and the magnitude of electrostrictive constant is appeared in the order of morphotropic, rhombohedral and tetragonal phase. The piezoelectric strain constant with applied field must be considered theelectrostrictive effect due to 90$^{\circ}$domain wall displacements, and the displacement of bimorph type actuator agrees with the calulated value well.

• Journal of the Korean Ceramic Society
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• v.43 no.2 s.285
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• pp.131-135
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• 2006

In this study, the dielectric, magnetic and transport properties of $Gd_{0.33}Sr_{0.67}FeO_3$ have been analyzed. The dielectric loss anomaly was found to be around 170 K. The activation energy corresponding to relaxation process of this dielectric anomaly was 0.17 eV. From the temperature dependence of the characteristic frequency, we concluded that the elementary process of the dielectric relaxation peak observed is correlated with polaron hopping between $Fe^{3+}\;and\;Fe^{4+}$ ions. The electrical resistivity displayed thermally activated temperature dependence above 200 K with an activation energy of 0.16 eV. In addition, the temperature dependence of thermoelectric power and resistivity suggests that the charge carrier responsible for conduction is strongly localized.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.2
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• pp.85-90
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• 2003

In this work $Cd_{4}GeSe_{6}$ and $Cd_{4}GeSe_{6}$ : $Co^{2+}$ single crystals were grown by the chemical transport reaction method and the structure of $Cd_{4}GeSe_{6}$ and $Cd_{4}GeSe_{6}$ : $Co^{2+}$ single crystals were monoclinic structure. The temperature dependence of optical energy 9ap was fitted well to Varshni equation. Also, the entropy, enthalpy and heat capacity were deduced from the temperature dependence of optical energy gap.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.08a
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• pp.31-36
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• 2002

In this work $Cd_{4}GeSe_{6}$ and $Cd_{4}GeSe_{6}:Co^{2+}$ single crystals were grown by the chemical transport reaction method and the structure of $Cd_{4}GeSe_{6}$ and $Cd_{4}GeSe_{6}:Co$ single crystals were monoclinic structure. The temperature dependence of optical energy gap was fitted well to Varshni equation. Also, the entropy, enthalpy and heat capacity were deduced from the temperature dependence of optical energy gap.

• Journal of Magnetics
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• v.17 no.4
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• pp.255-260
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• 2012

In this study, we determine that the electron paramagnetic resonance line-width (EPRLW) is axially symmetric about the c-axis and analyze the spin Hamiltonian with an isotopic g-factor of 1.9920 at a frequency of 9.5 GHz. It should be noted that the electron paramagnetic resonance signals are Lorentzian. Our findings show that the EPRLW decreases exponentially with an increase in the temperature; i.e., its temperature dependence in the range 300-400 K obeys Arrhenius behavior, this kind of temperature dependence indicates an off-center a motional narrowing of the spectrum when $Mn^{2+}$ impurity ions substitute for $Nb^{5+}$ ions. The specific heats follow a linear dependence suggesting a simple Debye $T^3$ behavior.

• Korean Journal of Materials Research
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• v.24 no.11
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• pp.625-631
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• 2014

To investigate the deformation properties of TiC-(5-20) mol% Mo solid solution single crystals at high temperature by compression testing, single crystals of various compositions were grown by the radio frequency floating zone technique and were deformed by compression at temperature from 1250K to 2270K at strain rates from $5.1{\times}10^{-5}$ to $5.9{\times}10^{-3}/s$. The plastic flow property of solid solution single crystals was found to be clearly different among a three-temperature range (low, intermediate and high temperature ranges) whose boundaries were dependent on the strain rate. From the observed property, we conclude that the deformation in the low temperature range is controlled by the Peierls mechanism, in the intermediate temperature range by the dynamic strain aging and in the high temperature range by the solute atmosphere dragging mechanism. The work softening tends to become less evident with an increasing experimental temperature and with a decreasing strain rate. The temperature and strain rate dependence of the critical resolved shear stress is the strongest in the high temperature range. The curves are divided into three parts with different slopes by a transition temperature. The critical resolved shear stress (${\tau}_{0.2}$) at the high temperature range showed that Mo content dependence of ${\tau}_{0.2}$ with temperature and the dependence is very marked at lower temperature. In the higher temperature range, ${\tau}_{0.2}$ increases monotonously with an increasing Mo content.

• 전기의세계
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• v.28 no.9
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• pp.43-50
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• 1979

Silicon nitride films were chemically deposited on silicon substrates by reacting SiCl$_{4}$ and NH$_{3}$ in a nitrogen atmosphere at 700~1100 .deg.C. The deposition rate increased rapidly with deposition temperature upto about 1000 .deg.C, and became less temperature dependent above this temperature. The etch rate of films in buffered HF solution decreased, with an increase of deposition temperature, and a heat treatment at a temperature higher than that of the deposition considerably reduced the etch rate. It indicates that the heat treatment resulted in a densification of the films. Surface charge density of 3~4 * 10$^{11}$ /cm$^{2}$ was determined from the C-V characteristics of MNS diode, and it was also found that surface charge density depended on deposition temperature, but not film thickness. The current-voltage characteristics displayed a logI-V$^{1}$2/ dependence in the temperature range of 300~500.deg.K. Measurement of the slope of this characteristics and its dependence on temperature and bias polarity suggest that conduction in sili con nitride films arises from the Poole-Frenkel mechanism.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.4
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• pp.563-570
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• 1990

A silicon pressure sensor made of a full bridge of diffused resistors was designed and fabricated using semiconductor integrated circuit process. Thin diaphragms with 30\ulcorner thickness were obtained using anisotropic wet chemical etching technique. Our device showed strong temperature dependence. Compensation networks are used to compensate for the temperature dependence of the pressure sensor. The bridge supply voltage having positive temperature coefficient by compensation networks was utilized against the negative temperature coefficient of bridge output voltage. The sensitivity fluctuation of pressure sensor before temperature compensation was -1700 ppm/\ulcorner, while it reduced to -710ppm\ulcorner with temperature compensation. Our result shows that the we could develop accurate and reliable pressure sensor over a wide temperature range(-20\ulcorner~50\ulcorner).