• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 춘계학술대회 논문집
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• pp.130-134
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• 1997

The structural defects, impurities, degree of crosslinking and shrinkage of 38 field-aged distribution cables have been analyzed. For the comparison of data, 9 new cables were also subjected to an analysis. It is observed that the structural defects and degree of crosslinking show a radial profile. The structural defects are different depending on the manufacturer. A large amount of impurities is present in the insulation shield, which hold true for the new cables manufactured recently. The degree of crosslinking near both shields is lower than that at the central region of the insulation layer. It was also found that, in some cal)toes, the ins난lation was not fully crosslinked. The shrinkage of field-aged cables is higher than that of new cables.

• 한국재료학회지
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• 제20권12호
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• pp.645-648
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• 2010

The structure and morphology of epitaxial layer defects in epitaxial Si wafers produced by the Czochralski method were studied using focused ion beam (FIB) milling, scanning electron microscopy (SEM), and transmission electron microscopy (TEM). Epitaxial growth was carried out in a horizontal reactor at atmospheric pressure. The p-type Si wafers were loaded into the reactor at about $800^{\circ}C$ and heated to about $1150^{\circ}C$ in $H_2$. An epitaxial layer with a thickness of $4{\mu}m$ was grown at a temperature of 1080-$1100^{\circ}C$. Octahedral void defects, the inner walls of which were covered with a 2-4 nm-thick oxide, were surrounded mainly by $\{111\}$ planes. The formation of octahedral void defects was closely related to the agglomeration of vacancies during the growth process. Cross-sectional TEM observation suggests that the carbon impurities might possibly be related to the formation of oxide defects, considering that some kinds of carbon impurities remain on the Si surface during oxidation. In addition, carbon and oxygen impurities might play a crucial role in the formation of void defects during growth of the epitaxial layer.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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• pp.239-242
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• 2002

Luminescence efficiency of phosphors, $SrTiO_3;Pr^{3+}$ and $SrIn_2O_4:Pr^{3+}$, is increased remarkably by III-group impurities. This effect is explained by a picture that carriers thermally released from impurity-induced traps supply energy to $Pr^{3+}$ ions. The impurities also improve carrier transport efficiency by reducing lattice defects. This picture indicates a possibility to develop new ternary oxide phosphors.

• Applied Science and Convergence Technology
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• 제23권3호
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• pp.113-127
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• 2014

For more than five decades, silicon has dominated the semiconductor industry that supports memory devices, ICs, photovoltaic devices, etc. Photoluminescence (PL) is an attractive silicon characterization technique because it is contactless and provides information on bulk impurities, defects, surface states, optical properties, and doping concentration. It can provide high resolution spectra, generally with the sample at low temperature and room-temperature spectra. The photoluminescence properties of silicon at low temperature are reviewed and discussed in this study. In this paper, silicon bulk PL spectra are shown in multiple peak positions at low temperature. They correspond with various impurities such as In, Al, and Be, phonon interactions, for example, acoustical phonons and optical phonons, different exciton binding energies for boron and phosphorus, dislocation related PL emission peak lines, and oxygen related thermal donor PL emissions.

• Tribology and Lubricants
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• 제23권4호
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• pp.143-148
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• 2007

The surface defects of an aluminum tube for an OPC drum have been analyzed using a scanning microscopy(SEM) and an energy dispersive X-ray analyze.(EDX). The SEM/EDX system, which may provide good information on the surface defects and their distributions, provides an optical diameter of an impurity and a chemical composition. These are strongly related on the coated film thickness and quality of an OPC drum, which is a key element of a toner cartridge for a laser printer. The experimental results show that the local deformations, scratch wear, and flaws are produce the non-uniform coating layers, which may be removed by a manufacturing process of an aluminum tube. The major parameters on the coating quality of an OPC drum are the impurities of an aluminum tube such as silicon, oxygen, calcium, carbon, sulphur, chlorine, and others. These impurities may be removed by an ingot molding, extrusion and drawing, quality control, and packing processes with a strict manufacturing technology.

• Tribology and Lubricants
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• 제23권5호
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• pp.195-200
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• 2007

This paper presents the friction induced scuffing and wear defects analysis of a pin bushing bearing based on the chemical composition using a scanning microscopy (SEM) and an energy dispersive X-ray analyzer (EDX). The SEM/EDX system, which may provide good information on the surface thermal defects and chemical compositions, provides impurities such as an aluminum, a silicon, a ferrous component and an oxygen, especially. The EDX measured results show that the oxygen may reduce the strength and a hardness of a pin busing, which may lead to a scuffing and a seizure on the rubbing contact surface. The current technology fabricated by a sintering for a pin bushing bearing should be modified or changed to reduce the oxygen composition and the impurities in pin bushing materials.

• 한국재료학회지
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• 제2권4호
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• pp.248-256
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• 1992

본 논문에서는 ATi$O_3$(A=Ca, Sr, Ba) 조성을 갖는 단순 페롭스카이트 구조에서 생성되는 격자결함 구조에 대하여 고찰하였다. 페롭스카이트 구조는 고충전밀도를 갖기 때문에 프렌클 결함은 고려되지 않았다. 쇼트키결함이나, 고유전자결함도 자연적으로 포함된 억셉타 불순물 농도에 비하면 무시할 정도로 적은 양이다. 실제적으로 전기적 특성에 영향을 주는 것은 전하적 결함을 발생하는 aliovalent 불순물이다. 삼성분계이기 때문에 양이온간의 비화학양론이 발생하며 BaTi$O_3$나 SrTi$O_3$에서 수백 ppm이내의 AO나 Ti$O_2$의 용해도가 관찰되나, CaTi$O_3$에서는 상당량의 CaO와 $TiO_2의$ 용해가 가능하다.

• 한국결정성장학회지
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• 제9권6호
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• pp.558-562
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• 1999

승화 성장법을 적용하여 성장된 6H-SiC 결정에 대하여, KSV 이론과 성장 계면에서의 미사면(vicinal plane)상의 step 성장 양상을 근거로 하여, 성장 계면에서의 물질 흡착의 거동과 결함의 생성간의 상호 관계를 고찰하고, micropipes와 내부 결함의 생성 원인을 논하였다. micropipe와 면결함등의 결함들은 ledge 혹은 kink에 침입된 불순물에 의하여 step 성장의 진행이 방해받는 부분에 형성되었다. 따라서, SiC 결정에서 이들 결함의 생성은 SiC 결정 성장 계면에 형성되는 결정학적 step 성장면과 분자 또는 원자들의 격자 이동에 관련이 있음을 알 수 있었다.

• 한국표면공학회지
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• 제53권4호
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• pp.169-181
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• 2020

The ferroelectricity in emerging fluorite-structure oxides such as HfO₂ and ZrO₂ has attracted increasing interest since 2011. Different from conventional ferroelectrics, the fluorite-structure ferroelectrics could be reliably scaled down below 10 nm thickness with established atomic layer deposition technique. However, defects such as carbon, hydrogen, and nitrogen atoms in fluorite-structure ferroelectrics are reported to strongly affect the nanoscale polymorphism and resulting ferroelectricity. The characteristic nanoscale polymorphism and resulting ferroelectricity in fluorite-structure oxides have been reported to be influenced by defect concentration. Moreover, the conduction of charge carriers through fluorite-structure ferroelectrics is affected by impurities. In this review, the origin and effects of various kinds of defects are reviewed based on existing literature.

• 한국전기전자재료학회논문지
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• 제24권3호
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• pp.173-176
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• 2011

The characteristic changes in ZnO thin film according to H- and O- plasma treatments have been studied by Photoluminescence (PL) spectroscopy at room temperature. The red shift of UV peak by 20-30 meV in PL spectra after plasma treatments is identified, which indicates that there are changes in the binding energy of bound exciton and/or the movement of energy levels of lattice defects and impurities. The width of UV peak is decreased after plasma treatments, which is believed to be closely related to the crystal quality of ZnO film. The increase of UV peak intensity after H-plasma treatment is also observed, and this could mean that the radiative recombination is strengthened because the hydrogen atoms in the plasma diffuse into the film where they passivate and neutralize the defects and the impurities.