• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.04a
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• pp.130-134
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• 1997

The structural defects, impurities, degree of crosslinking and shrinkage of 38 field-aged distribution cables have been analyzed. For the comparison of data, 9 new cables were also subjected to an analysis. It is observed that the structural defects and degree of crosslinking show a radial profile. The structural defects are different depending on the manufacturer. A large amount of impurities is present in the insulation shield, which hold true for the new cables manufactured recently. The degree of crosslinking near both shields is lower than that at the central region of the insulation layer. It was also found that, in some cal)toes, the ins난lation was not fully crosslinked. The shrinkage of field-aged cables is higher than that of new cables.

• Korean Journal of Materials Research
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• v.20 no.12
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• pp.645-648
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• 2010

The structure and morphology of epitaxial layer defects in epitaxial Si wafers produced by the Czochralski method were studied using focused ion beam (FIB) milling, scanning electron microscopy (SEM), and transmission electron microscopy (TEM). Epitaxial growth was carried out in a horizontal reactor at atmospheric pressure. The p-type Si wafers were loaded into the reactor at about $800^{\circ}C$ and heated to about $1150^{\circ}C$ in $H_2$. An epitaxial layer with a thickness of $4{\mu}m$ was grown at a temperature of 1080-$1100^{\circ}C$. Octahedral void defects, the inner walls of which were covered with a 2-4 nm-thick oxide, were surrounded mainly by $\{111\}$ planes. The formation of octahedral void defects was closely related to the agglomeration of vacancies during the growth process. Cross-sectional TEM observation suggests that the carbon impurities might possibly be related to the formation of oxide defects, considering that some kinds of carbon impurities remain on the Si surface during oxidation. In addition, carbon and oxygen impurities might play a crucial role in the formation of void defects during growth of the epitaxial layer.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.239-242
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• 2002

Luminescence efficiency of phosphors, $SrTiO_3;Pr^{3+}$ and $SrIn_2O_4:Pr^{3+}$, is increased remarkably by III-group impurities. This effect is explained by a picture that carriers thermally released from impurity-induced traps supply energy to $Pr^{3+}$ ions. The impurities also improve carrier transport efficiency by reducing lattice defects. This picture indicates a possibility to develop new ternary oxide phosphors.

• Applied Science and Convergence Technology
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• v.23 no.3
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• pp.113-127
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• 2014

For more than five decades, silicon has dominated the semiconductor industry that supports memory devices, ICs, photovoltaic devices, etc. Photoluminescence (PL) is an attractive silicon characterization technique because it is contactless and provides information on bulk impurities, defects, surface states, optical properties, and doping concentration. It can provide high resolution spectra, generally with the sample at low temperature and room-temperature spectra. The photoluminescence properties of silicon at low temperature are reviewed and discussed in this study. In this paper, silicon bulk PL spectra are shown in multiple peak positions at low temperature. They correspond with various impurities such as In, Al, and Be, phonon interactions, for example, acoustical phonons and optical phonons, different exciton binding energies for boron and phosphorus, dislocation related PL emission peak lines, and oxygen related thermal donor PL emissions.

• Tribology and Lubricants
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• v.23 no.4
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• pp.143-148
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• 2007

The surface defects of an aluminum tube for an OPC drum have been analyzed using a scanning microscopy(SEM) and an energy dispersive X-ray analyze.(EDX). The SEM/EDX system, which may provide good information on the surface defects and their distributions, provides an optical diameter of an impurity and a chemical composition. These are strongly related on the coated film thickness and quality of an OPC drum, which is a key element of a toner cartridge for a laser printer. The experimental results show that the local deformations, scratch wear, and flaws are produce the non-uniform coating layers, which may be removed by a manufacturing process of an aluminum tube. The major parameters on the coating quality of an OPC drum are the impurities of an aluminum tube such as silicon, oxygen, calcium, carbon, sulphur, chlorine, and others. These impurities may be removed by an ingot molding, extrusion and drawing, quality control, and packing processes with a strict manufacturing technology.

• Tribology and Lubricants
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• v.23 no.5
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• pp.195-200
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• 2007

This paper presents the friction induced scuffing and wear defects analysis of a pin bushing bearing based on the chemical composition using a scanning microscopy (SEM) and an energy dispersive X-ray analyzer (EDX). The SEM/EDX system, which may provide good information on the surface thermal defects and chemical compositions, provides impurities such as an aluminum, a silicon, a ferrous component and an oxygen, especially. The EDX measured results show that the oxygen may reduce the strength and a hardness of a pin busing, which may lead to a scuffing and a seizure on the rubbing contact surface. The current technology fabricated by a sintering for a pin bushing bearing should be modified or changed to reduce the oxygen composition and the impurities in pin bushing materials.

• Korean Journal of Materials Research
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• v.2 no.4
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• pp.248-256
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• 1992

This paper has reviewed some of the basic principles that underlie the field of defect chemistry in simple ATi$O_3$(A=Ca, Sr, Ba) perovskites. Frenkel defects in perovskite structure is very much unlikely, and Schottky defects and intrinsic electronic defects in undoped materials are negligibly small compared with background acceptor impurities. The electrical properties of perovskite ceramics are dependent on the aliovalent impurities. Since perovskite structure is a ternary system, the stoiohiometry between cations as well as cation-anion ratio will affect defect structure and electrical properties. BaTi$O_3$and SrTi$O_3$show a limited deviation from the cation stoichiometry while CaTi$O_3$has significant excess CaO and Ti$O_2$solubility.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.6
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• pp.558-562
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• 1999

For 6H-SiC crystals which was obtained by sublimation growth, the formation of micropipes and internal planar defects was discussed in consideration of the inter-relationship between mass adsorption behavior and the defects origin on the growth interface on the basis of KSV theory and the the step growth pattern on the vicinal plane. Micropipes and planar defects was formed in the region which the step could not be grown by impurities impinging. It was realized that the internal defects formation was related to the crystallographic step planes formed on the growth interface and the migration of the molecules adsorbed on it.

• Journal of the Korean institute of surface engineering
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• v.53 no.4
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• pp.169-181
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• 2020

The ferroelectricity in emerging fluorite-structure oxides such as HfO₂ and ZrO₂ has attracted increasing interest since 2011. Different from conventional ferroelectrics, the fluorite-structure ferroelectrics could be reliably scaled down below 10 nm thickness with established atomic layer deposition technique. However, defects such as carbon, hydrogen, and nitrogen atoms in fluorite-structure ferroelectrics are reported to strongly affect the nanoscale polymorphism and resulting ferroelectricity. The characteristic nanoscale polymorphism and resulting ferroelectricity in fluorite-structure oxides have been reported to be influenced by defect concentration. Moreover, the conduction of charge carriers through fluorite-structure ferroelectrics is affected by impurities. In this review, the origin and effects of various kinds of defects are reviewed based on existing literature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.3
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• pp.173-176
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• 2011

The characteristic changes in ZnO thin film according to H- and O- plasma treatments have been studied by Photoluminescence (PL) spectroscopy at room temperature. The red shift of UV peak by 20-30 meV in PL spectra after plasma treatments is identified, which indicates that there are changes in the binding energy of bound exciton and/or the movement of energy levels of lattice defects and impurities. The width of UV peak is decreased after plasma treatments, which is believed to be closely related to the crystal quality of ZnO film. The increase of UV peak intensity after H-plasma treatment is also observed, and this could mean that the radiative recombination is strengthened because the hydrogen atoms in the plasma diffuse into the film where they passivate and neutralize the defects and the impurities.