• 대한치과보철학회지
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• 제43권4호
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• pp.528-543
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• 2005

Statement of problem: Repeated delivery and removal of abutment cause some changes such as wear, scratch or defect of hexagonal structure. It may increase the value of rotational freedom(RF) between hexagonal structures. Purpose: The purpose of this study was to evaluate surface changes and rotational freedom between the external hexagon of the implant fixture and internal hexagon of abutment after repeated delivery and removal under SEM and toolmaker's microscope. Materials and methods: Implant systems used for this study were 3i and Avana. Seven pail's of implant fixture, abutment and abutment screws for each system were selected and all fixtures were perpendicularly mounted in liquid unsaturated polyesther with dental surveyor. Each one was embedded beneath the platform of fixture. Surfaces of hexagonal structure before repeated closing and opening of abutment were observed using SEM and rotational freedom was measured by using toolmaker's microscope. Each abutment was secured to the implant future by each abutment screw with recommended torque value using a digital torque controller and was repeatedly delivered and removed by 20 times respectively. After experiment, evaluation for the change of hexagonal structures and measurement of rotational freedom were performed. Result : The results were as follows; 1. Wear of contact area between implant fixture and abutment was considerable in both 3i and Avana system. Scratches and defects were frequently observed at the line-angle of hexagonal structures of implant fixture and abutment. 2. In the SEM view of the external hexagon of implant fixture, the point-angle areas at the corner edge of hexagon were severely worn out in both systems. It was more notable in the case of 3i systems than in that of Avana systems. 3. In the SEM view of the internal hexagon of abutment, Gingi-Hue abutment of 3i systems showed severe wear in micro-stop contacts that were machined into the corners to prevent rotation and cemented abutment of Avana systems showed wear in both surface area adjacent to the corner mating with external hexagon of implant fixture. 4 The mean values of rotational freedom between the external hexagon of the implant fixture and internal hexagon of abutment were 0.48$\pm$0.04$^{\circ}$ in pre-tested 3i systems and 1.18$\pm$0.25$^{\circ}$ after test, and 1.80$\pm$0.04$^{\circ}$ in pre-tested Avana systems and 2.61$\pm$0.16$^{\circ}$ after test. 5. Changes of rotational freedom after test shouted statistical)y a significant increase in both 3i and Avana systems(P<0.05, paired t-test). 6. Statistically, there was no significant difference between amount of increase in the rotational freedom of 3i systems and amount of increase in that of Avana ones(P>0.05, unpaired t-test). Conclusion: Conclusively, it was considered that repeated delivery and remove of abutment by 20 times would not have influence on screw joint stability. However, it caused statistically the significant change of rotational freedom in tested systems. Therefore, it is suggested that repeated delivery and remove of abutment should be minimal as possible as it could be and be done carefully Additionally, it is suggested that the means or treatment to prevent the wear of mating components should be devised.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.100-101
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• 2012

The plasma damage free and room temperature processedthin film deposition technology is essential for realization of various next generation organic microelectronic devices such as flexible AMOLED display, flexible OLED lighting, and organic photovoltaic cells because characteristics of fragile organic materials in the plasma process and low glass transition temperatures (Tg) of polymer substrate. In case of directly deposition of metal oxide thin films (including transparent conductive oxide (TCO) and amorphous oxide semiconductor (AOS)) on the organic layers, plasma damages against to the organic materials is fatal. This damage is believed to be originated mainly from high energy energetic particles during the sputtering process such as negative oxygen ions, reflected neutrals by reflection of plasma background gas at the target surface, sputtered atoms, bulk plasma ions, and secondary electrons. To solve this problem, we developed the NBAS (Neutral Beam Assisted Sputtering) process as a plasma damage free and room temperature processed sputtering technology. As a result, electro-optical properties of NBAS processed ITO thin film showed resistivity of $4.0{\times}10^{-4}{\Omega}{\cdot}m$ and high transmittance (>90% at 550 nm) with nano- crystalline structure at room temperature process. Furthermore, in the experiment result of directly deposition of TCO top anode on the inverted structure OLED cell, it is verified that NBAS TCO deposition process does not damages to the underlying organic layers. In case of deposition of transparent conductive oxide (TCO) thin film on the plastic polymer substrate, the room temperature processed sputtering coating of high quality TCO thin film is required. During the sputtering process with higher density plasma, the energetic particles contribute self supplying of activation & crystallization energy without any additional heating and post-annealing and forminga high quality TCO thin film. However, negative oxygen ions which generated from sputteringtarget surface by electron attachment are accelerated to high energy by induced cathode self-bias. Thus the high energy negative oxygen ions can lead to critical physical bombardment damages to forming oxide thin film and this effect does not recover in room temperature process without post thermal annealing. To salve the inherent limitation of plasma sputtering, we have been developed the Magnetic Field Shielded Sputtering (MFSS) process as the high quality oxide thin film deposition process at room temperature. The MFSS process is effectively eliminate or suppress the negative oxygen ions bombardment damage by the plasma limiter which composed permanent magnet array. As a result, electro-optical properties of MFSS processed ITO thin film (resistivity $3.9{\times}10^{-4}{\Omega}{\cdot}cm$, transmittance 95% at 550 nm) have approachedthose of a high temperature DC magnetron sputtering (DMS) ITO thin film were. Also, AOS (a-IGZO) TFTs fabricated by MFSS process without higher temperature post annealing showed very comparable electrical performance with those by DMS process with $400^{\circ}C$ post annealing. They are important to note that the bombardment of a negative oxygen ion which is accelerated by dc self-bias during rf sputtering could degrade the electrical performance of ITO electrodes and a-IGZO TFTs. Finally, we found that reduction of damage from the high energy negative oxygen ions bombardment drives improvement of crystalline structure in the ITO thin film and suppression of the sub-gab states in a-IGZO semiconductor thin film. For realization of organic flexible electronic devices based on plastic substrates, gas barrier coatings are required to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency flexible AMOLEDs needs an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}gm^{-2}day^{-1}$. The key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required (under ${\sim}10^{-6}gm^{-2}day^{-1}$) is the suppression of nano-sized defect sites and gas diffusion pathways among the grain boundaries. For formation of high quality single inorganic gas barrier layer, we developed high density nano-structured Al2O3 single gas barrier layer usinga NBAS process. The NBAS process can continuously change crystalline structures from an amorphous phase to a nano- crystalline phase with various grain sizes in a single inorganic thin film. As a result, the water vapor transmission rates (WVTR) of the NBAS processed $Al_2O_3$ gas barrier film have improved order of magnitude compared with that of conventional $Al_2O_3$ layers made by the RF magnetron sputteringprocess under the same sputtering conditions; the WVTR of the NBAS processed $Al_2O_3$ gas barrier film was about $5{\times}10^{-6}g/m^2/day$ by just single layer.

• Maxillofacial Plastic and Reconstructive Surgery
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• 제30권3호
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• pp.241-248
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• 2008

Tibial bone grafts provide an adequate volume of cancellous bone with cortical bone, high biologic value of bone, minimal gait disturbance and complications, and no special contraindications, and offer a superior clinical results than any other donor sites. Lateral appoach in tibial bone graft was used to gain large bone volume traditionally, but medial approach provides low morbidity associated with the tibial anatomic structure, simple and safety surgical procedure, and better comfortable to patients recently. We have undertaken clinical and retrospective studies on patients in Dept. of Oral and Maxillofacial Surgery, Inha University Hospital from April 2004 to January 2008. 50 patients have maxillofacial bony defect as resection of bening tumor, cyst enucleation, alveolar bone resorption, sinus pneumatization were received the tibial proximal autogenous particulated cancellous bone grafts. They were analyzed sex, age, diagnosis of recipient site, lesion size, dornor site, cortical bone repositioning, complications and we concluded favorable following results. 1. Medial approach for proximal tibia is safer and technically easier than lateral approach, associated with the proximal tibial anatomic structures, and short operative times. 2. Proximal tibia provides an adequate bone volume with predictability for oral and maxillofacial reconstruction. 3. Patients rarely complain of pain, swelling, discomfort and dysfunction such as gait disturbance. In conclusion, medial approach for proximal tibial graft seems to be a valuable tool for oral and maxillofacial reconstruction.

• 대한화학회지
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• 제31권4호
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• pp.301-307
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• 1987

600~$1050^{\circ}C$와 $1{\times}10^{-6}\~\1{\times}10^2\;torr$에서 고순도의 $La_2O_3$의 전기전도도가 연구되었다. 결합구조 및 반도체형이 온도 및 산소분압의 함수로 연구되었으며 위의 온도 및 산소압력의 영역에서 $La_2O_3$의 전도도값은 $1{\times}10^{-9}\~\1{\times}10^{-3}\(ohm{-}cm)^{-1}$ 로 나타났다. 전기전도도의 산소압력의존성은 $700^{\circ}C$에서 5.7, $1,000^{\circ}C$에서 5.3이며 $700^{\circ}C$이하의 낮은 오도영역에서는 9~14의 값은 나타내었다. 온도 감소에 따른 n값의 증가는 ${\alpha}-La_2O_3$의 전기전도가 단순한 전도메카니즘을 나타내지 않는다는 사실을 보여준다. 낮은 산소압력에서 전기운반체는 금속공위가 아니라 산소이온이다. 또한 낮은 온도영역에서 전기전도는 이온성을 띄며 높은 온도영역에서는 전자전도성을 나타낸다.

• Asian-Australasian Journal of Animal Sciences
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• 제29권6호
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• pp.793-800
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• 2016

Most hinnies (female donkey${\times}$male horse) and mules (female horse${\times}$male donkey) are sterile with few reports of equine fertile hybrids. The main cause of this sterility is thought to be a meiotic block to spermatogenesis and oogenesis. This study compared the developmental features of the testes and a histological analyses of spermatogenesis in a male hinny with those of a normal, fertile stallion and Jack donkey. Hinny testes showed a thicker tunica albuginea, fewer blood vessels and more connective tissue in the testis parenchyma than those of the stallion and Jack donkey. Although the mean number of seminiferous tubules was significantly higher in stallion and hinny than Jack donkey (p<0.01), the mean proportion of seminiferous tubules was lower in the hinny (p<0.01) which resulted in a smaller diameter of seminiferous tubules. The mean number of spermatogonia and spermatocytes per unit area were significantly lower in hinny testis (p<0.01) and no spermatids or mature spermatozoa cells were found during immunofluorescent analyses. These results indicated that defects in seminiferous tubule development and structure occur in the testis of hinnies. Furthermore, most spermatogonia and spermatocytes cease development in synapsis during mid-meiosis of spermatocytes, which results in a block to spermatogenesis that prevents the formation of spermatids and matured spermatozoa during meiosis in male hinnies.

• 한국진공학회지
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• 제10권3호
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• pp.335-340
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• 2001

RF마그네트론 스퍼터링법으로 사파이어 기판 위에 Ga을 1 wt% 첨가한 ZnO 박막(GZO)을 기판온도 $550^{\circ}C$에서 성장시켜 다결정 박막을 제조하였다. 이러한 박막은 불충분한 전기적 특성이나 PL(Photoluminescence) 특성을 보이고 있다. 이러한 전하농도, 이동도 그리고 PL특성 등과 같은 전기적 광학적 특성을 향상시키고자 질소분위기하에서 RTA(Rapid Thermal Annealing) 법으로 $800^{\circ}C$와 $900^{\circ}C$에서 각각 3분씩 후열처리 하였다. RTA법으로 후열처리한 GZO박막의 비저항은 $2.6\times10^{-4}\Omega$/cm 였으며 전자농도와 이동도는 각각 $3.9\times10^{20}/\textrm{cm}^3$과 60 $\textrm{cm}^2$/V.s 였다. 이러한 물리적 성질들의 향상은 열처리시 원자 크기가 비슷한 도핑된 Ga 원자들이 일부 휘발되는 Zn 빈자리로 치환하면서 침입자리 보다는 치환자리로의 전이에 기인한 것으로 생각된다.

• 한국진공학회지
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• 제14권2호
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• pp.91-96
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• 2005

양성자 주입과 웨이퍼접합기술을 접목한 ion-cut기술로서 SOI 웨이퍼를 제조하는 기술을 개발하였다. SRIM 전산모사에 의하면 일반 SOI 웨이퍼 (200nm SOI, 400nm BOX) 제조에는 65keV의 양성자주입이 요구된다. 웨이퍼분리를 위한 최적 공정조건을 얻기 위해 조사선량과 열처리조건(온도 및 시간)에 따른 blistering 및 flaking 등의 표면변화를 조사하였다. 실험결과 유효선량범위는 $6\~9times10^{16}H^+/cm^2$이며, 최적 아닐링조건은 $550^{\circ}C$에서 30분 정도로 나타났다. RCA 세정법으로서 친수성표면을 형성하여 웨이퍼 직접접합을 수행하였으며, IR 조사에 의해 무결함접합을 확인하였다 웨이퍼 분리는 예비실험에서 정해진 최적조건에서 이루어졌으며, SOI층의 안정화를 위해 고온열처리($1,100^{\circ}C,\;60$분)를 시행하였다. TEM 측정상 SOI 구조결함은 발견되지 않았으며, BOX(buried oxide)층 상부계면상의 포획전하밀도는 열산화막 계면의 낮은 밀도를 유지함을 확인하였다.

• 한국결정성장학회지
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• 제24권5호
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• pp.196-201
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• 2014

화학적 습식 에칭을 통해 AlN와 GaN의 결함 및 표면 특성을 분석했다. 화학적 습식 에칭은 단결정의 결함을 선택적으로 에칭하기 때문에 결정의 품질을 평가하는 좋은 방법으로 주목 받고 있다. AlN와 GaN의 단결정은 NaOH/KOH 용융액을 이용하여 에칭을 했으며, 에칭 후 표면 특성을 알아보기 위해 주사전자현미경(SEM)과 원자힘 현미경(AFM)을 촬영했다. 에치 핏의 깊이를 측정하여 표면에 따른 에칭 속도를 계산했다. 그 결과 AlN와 GaN 표면에는 두 개의 다른 형태에 에치 핏이 형성 되었다. (0001)면의 metal-face(Al, Ga)는 육각 추를 뒤집어 놓은 형태를 갖는 반면 N-face는 육각형 형태의 소구 모양(hillock structure)을 하고 있었다. 에칭 속도는 N-face가 metal-face(Al, Ga)보다 각 각 약 109배(AlN)와 5배 정도 빨랐다. 에칭이 진행되는 동안 에치 핏은 일정한 크기로 증가하다 서로 이웃한 에치 핏들과 합쳐지는 것으로 보여졌다. 또한 AlN와 GaN의 에칭 공정을 화학적 메커니즘을 통해 알아 보았는데, 수산화 이온($OH^-$)과 질소의 dangling bond에 영향을 받아 metal-face(Al, Ga)와 N-face가 선택적으로 에칭되는 것으로 추론되었다.

• 한국결정성장학회지
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• 제27권2호
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• pp.89-93
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• 2017

다양한 성장온도, V/III 비율, 성장속도과 같은 공정변수의 조절을 통하여 GaN 단결정을 성장시키고, 그에 따른 표면 및 재료 내부의 결함분석을 통하여 고휘도 고출력의 소자적용을 위한 bulk GaN 단결정의 두께를 최적화하였다. 2인치 직경의 sapphire 기판 위에 HVPE(hydride vapor phase epitaxy) 공정변수들을 조절하여, 0.3~7.0 mm 두께의 GaN 결정을 성장시켰다. 성장된 GaN 단결정의 구조분석을 위하여 XRD 분석을 사용하였고, 공정변수의 변화에 따른 표면 특성은 광학 현미경을 이용하여 관찰하였다. 성장된 두께에 따른 결함밀도 분석을 위하여 화학습식 에칭하였고, 에칭된 표면을 SEM으로 관찰하였다.

• 대한골관절종양학회지
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• 제11권2호
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• pp.126-133
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• 2005

목적: 화상흔, 만성골수염 등의 고위험인자를 동반하는 경우가 많으며 예후가 서구에 비해 나쁜 것으로 알려진 우리나라의 사지에 발생한 편평세포 상피암의 치료 결과를 알아보고자 하였다. 대상 및 방법: 1993년 8월부터 2002년 9월 사이에 본원에 내원당시 원격전이가 없었고, 치료 후 36개월 이상 외래추적 관찰이 가능하였던 20예를 대상으로 광범위 절제술 및 절제연을 얻기 힘든 사지 말단부나 신경, 혈관계를 침범한 경우에는 절단술을 시행하였다. 평균 연령은 57.2세였고, 남자와 여자는 각각 16명과 4명이었다. 병기는 TMN Stage를 이용하여 분류하였고, 절제한 병변의 조직학적 분화도를 측정하였다. 결과: 평균 48.3개월(36~84개월)간의 외래 추적 결과 총 6예(30%)에서 전이가 있었다. 근접 림프절로의 전이가 3예, 원격전이가 3예였으며 원격 전이 장소로는 폐가 3예, 흉추가 1예였다. 최종 추시 상 생존은 18예였고 5년 생존률은 50%였다. 국소재발이 3예에서 있었으며 재발된 평균 시간은 11개월(4~18개월)이었다. 합병증으로 광범위 절제술 시행 후 이식 피부의 부분적인 착상 실패가 2예가 있었다. 광범위 절제술을 시행한 군은 평균 1.9번의 수술을 받았고, 절단술을 시행한 군은 평균 1.3번의 수술을 받았다. 결론: 우리나라에 상대적으로 흔한 사지에 생긴 화상 반흔이나 만성 골수염에 속발한 편평 세포 상피암은 높은 전이율을 보였으며, 광범위한 절제연을 확보할 수 있는 경우 절단술과 비슷한 예후를 보이는 것으로 사료된다.