• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.27-30
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• 2003

Recently, on power system, it is used to high voltage of transmission and distribution due to safe power supply and have high quality and insulation in order to satisfy excellent insulator. Thus, according to underground of high voltage cable, is occurred break down by ground short. Therefore, it is used to high quality XLPE power cable to interrupt instantaneous voltage drop. If it appear inner defect for cable whose have high quality and insulation, it is reduced rapidly due to concentration of electrical field. After assemble to manufacture, in order to inspect cable condition, it is decided much inspection standard. In this paper, In inner defect of assembling cable at manufacture, for measure the variation of insulation condition by void. it tested the variation of insulating characteristics, using $\phi$-q-n distribution variation in partial discharge experiment.

• Journal of Information Display
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• 제12권3호
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• pp.121-124
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• 2011

The mechanism for lattice-shaped mura defects was proposed by characterizing the electro-optic properties of liquid crystal (LC), which showed different transmission properties between the normal and mura defect areas. An increase in the mura defect rate was observed when the dotted LC in the one drop filling (ODF) was exposed for a longer time. The dotted LC droplet at the edge evaporated more rapidly than that in the center. This resulted in a higher concentration of polar singles at the edge of the dotted LC droplet, leading to a higher ${\Delta}n$ value and higher transmittance. This implies that the reductio of the exposure time of the dotted LC to air plays a critical role in decreasing the occurrence of lattice-shaped mura defects in ODF.

• 한국연소학회지
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• 제4권2호
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• pp.51-62
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• 1999

NOx formation in turbulent flames is strongly coupled with temperature, superequilibrium concentration of O radical, and residence time. This implies that in order to accurately predict NO level, it is necessary to develop sophisticated models able to account for the complex turbulent combustion processes including turbulence/chemistry interaction and radiative heat transfer. The present study numerically investigates the turbulent nonpremixed hydrogen jet flames using the laminar flamelet model. Flamelet library is constructed by solving the modified Peters equations and the turbulent combustion model is extended to nonadiabatic flame by introducing the enthalpy defect. The effects of turbulent fluctuation are taken into account by the presumed joint PDFs for mixture fraction, scalar dissipation rate, and enthalpy defect. The predictive capability of the present model has been validated against the detailed experimental data. Effects of nonequilibrium chemistry and radiative heat loss on the thermal NO formation are discussed in detail.

• 한국연소학회:학술대회논문집
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• 한국연소학회 1999년도 제19회 KOSCO SYMPOSIUM 논문집
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• pp.93-104
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• 1999

NOx formation in turbulent flames is strongly coupled with temperature, superequilibrium concentration of O radical, and residence time. This implies that in order to accurately predict NO level, it is necessary to develop sophisticated models able to account for the complex turbulent combustion processes including turbulence/chemistry interaction and radiative heat transfer. The present study numerically investigates the turbulent nonpremixed hydrogen jet flames using the laminar flamelet model. Flamelet library is constructed by solving the modified Peters equations and the turbulent combustion model is extended to nonadiabatic flame by introducing the enthalpy defect. The effects of turbulent fluctuation are taken into account by the presumed joint PDFs for mixture fraction, scalar dissipation rate, and enthalpy defect. The predictive capability of the present model has been validated against the detailed experimental data. Effects of nonequilibrium chemistry and radiative heat loss on the thermal NO formation are discussed in detail.

• 한국세라믹학회지
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• 제23권6호
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• pp.52-58
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• 1986

$Pb(Zr_{0.525} Ti_{0.475})O_3$ piezoelectric ceramics both unmodified and doped with NiO were prepared by the conventional oxide techniques using sintering temperature from 900 to to 125$0^{\circ}C$. The difference in densification process between unmodified and NiO doped PZT ceramics was studied by shrinkage vs. firing temperatures and it was caused by increasing defect concentration in calcining process of NiO doped PZT ceramics. And nickel oxide solubility limit for $Pb(Zr_{0.525} Ti_{0.475})O_3$ ceramics is shown to be at the range from 0.2wt% to 0.5wt% from this defect model micro-structures dielectric and piezolectric properties of Nio doped PZT ceramics.

• 산업기술연구
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• 제18권
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• pp.203-208
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• 1998

Fatigue tests were performed to examine the 4 parameter method for specimens prepared by various heat treatment which resulted in different mechanical properties. Obtained main results are as follows. (1) Samples treated by austempering did not show the expected improvement of fatigue limit although hardness and strength increased. This is attributed to the fact that defect sensitivities of materials increase as increasing of hardness and tensile strength, it is also shown that the graphites acting as stress concentration place become larger by austempering heat treatment than by normal annealing. (2) It is very reasonable to predict the fatigue limit of ductile irons with 4 parameter method based on ${\sigma}_{TS}$, $H_v$, ${\Delta}K_{th}$ and ${\sqrt{area}}_{max}$. (3) The half-austempering treatment appeared to be more useful than the full-austempering method to improve the fatigue limit in the spheroidal graphite cast iron with multi defective material.

• 한국세라믹학회지
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• 제56권3호
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• pp.302-307
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• 2019

The intrinsic oxygen-vacancy defects in ZnO have prevented the preparation of p-type ZnO with high carrier concentration. Therefore, in this work, the effect of the concentration of H₂O₂ (used as an oxygen source) on the oxygen-vacancy concentration in ZnO prepared by atomic layer deposition was investigated. The results indicated that the oxygen-vacancy concentration in the ZnO film decreased by the oxygen-rich growth conditions when using H₂O₂ as the oxygen precursor instead of a conventional oxygen source such as H₂O. The suppression of oxygen vacancies decreased the carrier concentration and increased the resistivity. Moreover, the growth orientation changed to the (002) plane, from the combined (100) and (002) planes, with the increase in H₂O₂ concentration. The passivation of oxygen-vacancy defects in ZnO can contribute to the preparation of p-type ZnO.

• 전자공학회논문지D
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• 제36D권4호
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• pp.48-56
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• 1999

본 논문에서는 초기 산소 농도가 고에너지 이온 주입시 결정 격자 손상에 의해 발생하는 산소 축적(pileup) 현상 및 주입된 불순물의 확산에 미치는 영향을 실험적으로 고찰하였다. 초기 산소 농도가 11.5, 15.5 ppma인 p-type (100)실리콘 웨이퍼에 \sup 11\B\sup +\ \sup 31\P\sup +\ 이온을 각각 1.2 MeV, 2.2 MeV 의 에너지로 1×10\sup 15\cm\sup 2\ 주입하고, 700℃(20시간)+1000℃(10시간)의 2단계 열처리를 거치 후 주입된 불순물 및 산소 농도의 분포를 이차이온질량분석기 (Secondary Ion Mass Spectrometry, SIMS)로 관찰하였으며 잔류 2차 결함의 분포는 투과전자현미경(Transmission Electron Microscopy, TEM)으로 관찰하였다. SIMS 측정 결과 산소의 축적이 {{{{ { R}_{ } }}}}\sub p\(projected range) 부근에서 관찰되었으며 열처리 후에도 상당한 양의 2차 결합 띠가 {{{{ { R}_{ } }}}}\sub p\부근에서 관찰되는 것으로 보아 2차 결함에 의해 산소가 포획되었음을 알 수 있다. 또한 붕소와 인의 확산은 웨이퍼의 초기 산소 농도가 클수록 벌크 방향으로의 확산이 증대되는 현상을 볼 수 있었다.

• ETRI Journal
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• 제11권4호
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• pp.75-83
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• 1989

The diffusion mechanism of Si in GaAs was investigated using different diffusion sources based on the Si-Ga-As ternary phase equilibria. The Si profiles are measured with secondary ion mass spectrometry and differ significantly for sources taken from the different phase fields in the ternary phase diagram. Neutral As vacancy diffusion is proposed for acceptor Si diffusion anneals using a Ga - Si - GaAs source. Donor Si diffusion using As - rich sources and a Si -GaAs tie line source shows concentration dependent diffusion behavior. Concentration dependent diffusion coefficients of donor Si for As - rich source diffusion were found to be related to net ionized donor concentration and showed three regimes of different behavior: saturation regime, intermediate regime,and intrinsic regime. Ga vacancies are proposed to be responsible for donor Si diffusionin GaAs: $Si_Ga^+V_Ga^-$ (donor Si -acceptor Gavacancy) complex for the extrinsic regime and neutral $V_G$a, for the intrinsic regime.The Si - GaAs tie line source resulted in two branch profiles, intermediate between the As - rich and the Ga - rich source diffusion cases.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.420-420
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• 2013

We investigated oxygen plasma effect on defect states near the interface of AlGaN/GaN High Electron Mobility Transistor (HEMT) structure grown on a silicon substrate. After the plasma treatment, electrical properties were evaluated using a frequency dependant Capacitance-Voltage (C-V) and a temperature dependant C-V measurements, and a deep level transient spectroscopy (DLTS) method to study the change of defect densities. In the depth profile resulted from the temperature dependant C-V, a sudden decrease in the carrier concentration for two-dimensional electron gas (2DEG) nearby 250 K was observed. In C-V measurement, the interface states were improved in case of the oxygen-plasma treated samples, whereas the interface was degraded in case of the nitrogen-plasma treated sample. In the DLTS measurement, it was observed the two kinds of defects well known in AlGaN/GaN structure grown on sapphire substrate, which have the activation energies of 0.15 eV, 0.25 eV below the conduction band. We speculate that this defect state in AlGaN/GaN on the silicon substrate is caused from the decrease in 2DEG's carrier concentrations. We compared the various DLTS signals with filling pulse times to identify the characteristics of the newly found defect. In the filling pulse time range under the 80 us, the activation energies changed as the potential barrier model. On the other hand, in the filling pulse time range above the 80 us, the activation energies changed as the extended potential model. Therefore, we suggest that the found defect in the AlGaN/GaN/Si structure could be the extended defect related with AlGa/N/GaN interface states.