Interpretation of the lattice-shaped mura defects in thin-film-transistor liquid crystal displays

The mechanism for lattice-shaped mura defects was proposed by characterizing the electro-optic properties of liquid crystal (LC), which showed different transmission properties between the normal and mura defect areas. An increase in the mura defect rate was observed when the dotted LC in the one drop filling (ODF) was exposed for a longer time. The dotted LC droplet at the edge evaporated more rapidly than that in the center. This resulted in a higher concentration of polar singles at the edge of the dotted LC droplet, leading to a higher ${\Delta}n$ value and higher transmittance. This implies that the reductio of the exposure time of the dotted LC to air plays a critical role in decreasing the occurrence of lattice-shaped mura defects in ODF.