• 패션비즈니스
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• 제3권4호
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• pp.1-6
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• 1999

The study attempted to identify the present conditions and problems of existing cap makers and to find a way to resolve the problems by examining the actual state of their production activities, in order to present basic data for designing more comfortable caps. After a preliminary examination was carried out with college women in Taegu and Kyongbuk areas, seven cap makers who have launched their own individual brands were chosen, and a questionnaire was performed with them. The collected data was analysed, using the SAS program. The results showed that the sales of the makers increased each year but they had a little defect rates resulting from poor raw and sub-materials and were inactive in developing a material or design. It was analysed, therefore, that to produce high quality caps, it is urgently required to develop a new material and design.

• Journal of Magnetics
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• 제11권3호
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• pp.139-142
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• 2006

We fabricated new one-dimensional magnetophotonic crystal (1D-MPC) utilizing the second and third photonic band gaps where localized modes existed. Structure of the 1D-MPC was $(Ta_{2}O_{5}/SiO_{2})_{5}/Bi:YIG/(SiO_{2}/Ta_{2}O_{5})_{5}$ with optical thicknesses of 3$\lambda$ /4 for $Ta_{2}O_{5} and $SiO_2$ dielectric layers and $\lambda$ /2 for Bi:YIG defect layer, where $\lambda$ is a wavelength of a localized mode in the second photonic band gap. Faraday rotation at the localized mode in the second photonic band gap was enhanced, which was confirmed by calculation using 4${\times}$4 matrix method.

• 반도체디스플레이기술학회지
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• 제19권3호
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• pp.112-117
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• 2020

NAND flash memory is a non-volatile memory that retains stored data even without power supply. Internal memory used as a data storage device and solid-state drive (SSD) is used in portable devices such as smartphones and digital cameras. However, NAND flash memory carries the risk of electric shock, which can cause errors during read/write operations, so use error correction codes to ensure reliability. It efficiently recovers bad block information, which is a defect in NAND flash memory. BBT (Bad Block Table) is configured to manage data to increase stability, and as a result of experimenting with the error correction code algorithm, the bit error rate per page unit of 4Mbytes memory was on average 0ppm, and 100ppm without error correction code. Through the error correction code algorithm, data stability and reliability can be improved.

• 대한기계학회논문집
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• 제14권3호
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• pp.747-754
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• 1990

본 연구에서는 장시간 가공하는 경우 가공량과 가공물에 입사되는 이온 빔의 입사각도에 따라 이온 스파터 가공이 표면거칠기에 미치는 영향에 대해서 연구해 보았 다.

• 한국주거학회:학술대회논문집
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• 한국주거학회 2005년도 추계학술대회 논문집
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• pp.359-362
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• 2005

In Korea, condominium apartment was supplied 50 years ago. However, the problems related to contract and selling in lots still happens. Most of these problems is due to be made a contract and selling in lots before completion of condominium. For solving these problems, it is necessary for throughgoing selling in lots and administrative guidance in time for development. Because of the problem after the selling in lots become involved not only selling in lots of developer and the contract with purchaser, but also condominium management and repair of defect processing system. As a result of consideration to development control and administrative guidance in Hawaii State, it may be had some effects like an appropriate management system, consumer protection and consumer education.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2005년도 춘계종합학술대회
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• pp.533-536
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• 2005

MAP 알고리즘은 터보코드의 최적 복호알고리즘으로 알려져 있지만, 연산의 복잡도가 매우 크다. 이러한 MAP 방식의 단점을 개선하기 위하여 일반적으로 log-MAP 알고리즘을 이용하게 된다. 본 논문에서는 log-MAP 복호기에서 비교적 연산량이 크고 동작속도에 큰 영향을 미치는 상태 메트릭 계산 블록의 연산 속도를 향상시킨 개선된 구조를 제안하고, LUT(Lookup Table)을 이용하지 않고 간단한 연산에 의해 보상하는 linear 보상기를 제안하여 동작속도를 개선하였다.

• E2M - 전기 전자와 첨단 소재
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• 제10권1호
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• pp.26-32
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• 1997

The gate induced drain leakage(GIDL) current under the stress of worse case in -MOSFET's with ultrathin gate oxides has been measured and characterized. The GIDL current was shown that P-MOSFET's of the thicker gate oxide is smaller than that of the thinner gate oxide. It was the results that the this cur-rent is decreased with the increamental stress time at the same devices.It is analyzed that the formation components of GIDL current are both energy band to band tunneling at high gate-drain voltage and energy band to defect tunneling at low drain-gate voltage. The degradations of GIDL current was analyzed the mechanism of major role in the hot carriers trapping in gate oxide by on-state stress.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.93-93
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• 2007

We present a mechanism for stress-induced interface degrdadations through ab initio pseudopotential calculations. We find that N interstitials at the interface create various defects levels in the Si band gap, which range from the mid gap to the conduction band of Si. The level positions are dependent on the configuration of oxygen toms around the N interstitial. On the other hand, the mid-gap level caused by Pb center is possibly removed by substitution of a N atom for a threefold-coordinated Si atom in the defect. Our calculations explain why interface state generations are enhanced in Si oxynitride, especially near conduction band edge of Si, although densities of Pb center are reduced.

• 한국전기전자재료학회논문지
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• 제14권11호
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• pp.869-873
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• 2001

The effects of alternate bias stress on p-channel poly-Si TFT\`s has been systematically investigated. We alternately applied positive and negative bias stress on p-channel poly-Si TFT\`s, device Performance(V$\_$th/, g$\_$m/, leakage current, S-slope) are alternately appeared to be increasing and decreasing. It has been shown that device performance degrade under the negative bias stress while improve under the positive bias stress. This effects have been related to the hot carrier injection into the gate oxide rather than the generation of defect states within the poly-Si/SiO$_2$ interface under alternate bias stress.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.570-573
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• 1999

High brightness (Y$_{x}$/Gd$_{1-x}$ )$_2$O$_3$:Eu Phosphor Particles were directly Prepared in the spray Pyrolysis by adding flux materials such as LiCl and HBO$_3$. The (Y$_{x}$/Gd$_{1-x}$ )$_2$O$_3$:Eu particles prepared from solution with flux material had higher PL (photoluminescence) intensities than those prepared from solution without flux. In the spray pyrolysis, the flux acts as promoter of the growth of crystallite and activation of doping material as in the solid state reaction method. Additionally, the flux improved PL intensity of (Y$_{x}$/Gd$_{1-x}$ )$_2$O$_3$:Eu phosphor particles by densifying the internal structure and eliminating the defect existing inside and surface of (Y$_{x}$/Gd$_{1-x}$ )$_2$O$_3$:Eu phosphor particles.r particles.