• Journal of Fashion Business
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• v.3 no.4
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• pp.1-6
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• 1999

The study attempted to identify the present conditions and problems of existing cap makers and to find a way to resolve the problems by examining the actual state of their production activities, in order to present basic data for designing more comfortable caps. After a preliminary examination was carried out with college women in Taegu and Kyongbuk areas, seven cap makers who have launched their own individual brands were chosen, and a questionnaire was performed with them. The collected data was analysed, using the SAS program. The results showed that the sales of the makers increased each year but they had a little defect rates resulting from poor raw and sub-materials and were inactive in developing a material or design. It was analysed, therefore, that to produce high quality caps, it is urgently required to develop a new material and design.

• Journal of Magnetics
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• v.11 no.3
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• pp.139-142
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• 2006

We fabricated new one-dimensional magnetophotonic crystal (1D-MPC) utilizing the second and third photonic band gaps where localized modes existed. Structure of the 1D-MPC was $(Ta_{2}O_{5}/SiO_{2})_{5}/Bi:YIG/(SiO_{2}/Ta_{2}O_{5})_{5}$ with optical thicknesses of 3$\lambda$ /4 for $Ta_{2}O_{5} and $SiO_2$ dielectric layers and $\lambda$ /2 for Bi:YIG defect layer, where $\lambda$ is a wavelength of a localized mode in the second photonic band gap. Faraday rotation at the localized mode in the second photonic band gap was enhanced, which was confirmed by calculation using 4${\times}$4 matrix method.

• Journal of the Semiconductor & Display Technology
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• v.19 no.3
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• pp.112-117
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• 2020

NAND flash memory is a non-volatile memory that retains stored data even without power supply. Internal memory used as a data storage device and solid-state drive (SSD) is used in portable devices such as smartphones and digital cameras. However, NAND flash memory carries the risk of electric shock, which can cause errors during read/write operations, so use error correction codes to ensure reliability. It efficiently recovers bad block information, which is a defect in NAND flash memory. BBT (Bad Block Table) is configured to manage data to increase stability, and as a result of experimenting with the error correction code algorithm, the bit error rate per page unit of 4Mbytes memory was on average 0ppm, and 100ppm without error correction code. Through the error correction code algorithm, data stability and reliability can be improved.

• Transactions of the Korean Society of Mechanical Engineers
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• v.14 no.3
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• pp.747-754
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• 1990

Since Ion sputter machining can perform removing processing in atom or molecule units in vacuum state, it has the merit that high precision processing is possible. In this study, therefore, the effect of incidence ion beam is certified to processing amount and surface roughness when longtimed processing is applied. As a result, processing amount is made almost constant with time and the best processing condition is achieved when the incidencial angle of ion is 55.deg.. In addition, processing time for the good surface roughness is different respectively to the quality of material and longtimed processing has some defect for achieving good surface roughness.

• Proceeding of Spring/Autumn Annual Conference of KHA
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• 2005.11a
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• pp.359-362
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• 2005

In Korea, condominium apartment was supplied 50 years ago. However, the problems related to contract and selling in lots still happens. Most of these problems is due to be made a contract and selling in lots before completion of condominium. For solving these problems, it is necessary for throughgoing selling in lots and administrative guidance in time for development. Because of the problem after the selling in lots become involved not only selling in lots of developer and the contract with purchaser, but also condominium management and repair of defect processing system. As a result of consideration to development control and administrative guidance in Hawaii State, it may be had some effects like an appropriate management system, consumer protection and consumer education.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• v.9 no.1
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• pp.533-536
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• 2005

MAP algorithm is known for optimal decoding algorithm of Turbo codes, but it has very large computational complexity and delay. Generally log-MAP algorithm is used in order to overcome the defect. In this paper we propose modified scheme of the state metric calculation block which can improve the computation speed in log-MAP decoder and simple linear offset unit without using LUT. The simulation results show that the operation speed of the proposed scheme is improved as compared with that of the past scheme.

• Electrical & Electronic Materials
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• v.10 no.1
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• pp.26-32
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• 1997

The gate induced drain leakage(GIDL) current under the stress of worse case in -MOSFET's with ultrathin gate oxides has been measured and characterized. The GIDL current was shown that P-MOSFET's of the thicker gate oxide is smaller than that of the thinner gate oxide. It was the results that the this cur-rent is decreased with the increamental stress time at the same devices.It is analyzed that the formation components of GIDL current are both energy band to band tunneling at high gate-drain voltage and energy band to defect tunneling at low drain-gate voltage. The degradations of GIDL current was analyzed the mechanism of major role in the hot carriers trapping in gate oxide by on-state stress.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.93-93
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• 2007

We present a mechanism for stress-induced interface degrdadations through ab initio pseudopotential calculations. We find that N interstitials at the interface create various defects levels in the Si band gap, which range from the mid gap to the conduction band of Si. The level positions are dependent on the configuration of oxygen toms around the N interstitial. On the other hand, the mid-gap level caused by Pb center is possibly removed by substitution of a N atom for a threefold-coordinated Si atom in the defect. Our calculations explain why interface state generations are enhanced in Si oxynitride, especially near conduction band edge of Si, although densities of Pb center are reduced.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.11
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• pp.869-873
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• 2001

The effects of alternate bias stress on p-channel poly-Si TFT\`s has been systematically investigated. We alternately applied positive and negative bias stress on p-channel poly-Si TFT\`s, device Performance(V$\_$th/, g$\_$m/, leakage current, S-slope) are alternately appeared to be increasing and decreasing. It has been shown that device performance degrade under the negative bias stress while improve under the positive bias stress. This effects have been related to the hot carrier injection into the gate oxide rather than the generation of defect states within the poly-Si/SiO$_2$ interface under alternate bias stress.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.570-573
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• 1999

High brightness (Y$_{x}$/Gd$_{1-x}$ )$_2$O$_3$:Eu Phosphor Particles were directly Prepared in the spray Pyrolysis by adding flux materials such as LiCl and HBO$_3$. The (Y$_{x}$/Gd$_{1-x}$ )$_2$O$_3$:Eu particles prepared from solution with flux material had higher PL (photoluminescence) intensities than those prepared from solution without flux. In the spray pyrolysis, the flux acts as promoter of the growth of crystallite and activation of doping material as in the solid state reaction method. Additionally, the flux improved PL intensity of (Y$_{x}$/Gd$_{1-x}$ )$_2$O$_3$:Eu phosphor particles by densifying the internal structure and eliminating the defect existing inside and surface of (Y$_{x}$/Gd$_{1-x}$ )$_2$O$_3$:Eu phosphor particles.r particles.