• E2M - 전기 전자와 첨단 소재
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• 제9권7호
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• pp.719-726
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• 1996

DLTS measurements were performed to study the annealing induced changes of the trap centers in MOV and to shed more light on the stability mechanism of the MOV. Two electron traps, Ec-0.26[eV] and Ec-(O.2-0.3)[eV], were observed in the unannealed samples in large quantities(7-9 X 1014[CM 3]), whereas the three electron traps Ec-0.17 [eV], Ec-0.26[eV] and Ec-(O.2-0.3)[eV] were observed far less in the annealed samples. The minima in the Ec-0.26[eV] trap density, coupled with the presented results that unannealed devices are unstable whereas 600.deg. C annealed devices are most stable, suggests that the instability of the MOV under long term electrical stressing is related to the Ec-0.26[eV] trap. This results support that the ion migration model for the device instability where the Ec-0.26[eV] defects may be the interstitial zinc or the migrating ions. The interstitial zinc originated as a result of the nonstoichiometric nature of ZnO might cause the degradation of the I-V characteristics of the MOV with long term electrical stressing.

• 센서학회지
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• 제32권6호
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• pp.455-461
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• 2023

We investigated the electrical characteristics of ZnO nanoparticles (NPs) with air exposure that is a widely used electron transport layer for quantum dot light-emitting diodes (QLEDs). Upon air exposure, we observed changes in the density of states (DOS) of the trap levels of ZnO NPs. In particular, with air exposure, the concentration of deep trap energy levels in ZnO NPs decreased and electron mobility significantly improved. Consequently, the air-exposed ZnO reduced leakage current by approximately one order of magnitude and enhanced the external quantum efficiency at the low driving voltage region of the QLED. In addition, based on the excellent conductivity properties, high-brightness QLEDs could be achieved.

• Transactions on Electrical and Electronic Materials
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• 제5권5호
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• pp.194-198
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• 2004

The influences of the deep-level concentration of p-type Si substrates on the optical properties of nano-porous silicon (PS) are investigated by deep level transient spectroscopy (DLTS) and photoluminescence (PL). Utilizing a Si substrate with Fe contaminations significantly enhanced the PL intensity of PS. All the PS samples formed on Fe-contaminated silicon substrates had stronger PL yield than that of reference PS without any intentional Fe contamination but the emission peak is not significantly changed. For the PS 1000 sample with Fe contamination of 1,000 ppb, the maximum PL intensity showed about ten times stronger PL than that of the reference PS sample. From PL and DLTS results, the PL efficiency strongly depends on the Fe-related trap concentration in Si substrates.

• 한국음향학회지
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• 제10권3호
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• pp.19-30
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• 1991

SAW와 반도체가 상호작용할 때 발생되는 횡음전전압을 이용하여 반절연 GaAs 웨이퍼 표면의 에너지 갭, 엑시톤, 얕은 준위 트랩, 깊은 준위 트랩, 어닐링 후의 형반전, $EL_2$ 준위의 준안정 상태 그리고 Cr이 첨가된 2인치 GaAs 웨이퍼의 전자 농도 분포를 비파괴적으로 측정평가 하였다. 또한 SAW를 발진기를 이용한 반도체 표면성질의 측정을 새로이 시도하고 이의 실용성을 밝혔다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1993년도 하계학술대회 논문집 B
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• pp.1253-1255
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• 1993

Double Injection(DI) switching devices consist of p+ and n+ contact separated by a nearly intrinsic semiconductor region containing deep trap. The FEM is chosen as a simulation method for DI switching device, because of the advantage in local mesh refinement and computer memory comparing with other methods. And Scharfetter-Gummel(S-G) scheme is applied, with which an accurate-seven point Gaussian Quadrature rule is combined. The existance of deed trap requires the modification of conventional equation set. So recombination rate equation is modified and a new equation is included in the equation set which conventionally consists of Poisson equation and current continuity equations.

• Bulletin of the Korean Chemical Society
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• 제13권6호
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• pp.665-669
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• 1992

We consider the problem of a random walker on a one-dimensional lattice (N sites) confronting a centrally-located deep trap (trapping probability, T=1) and N-1 adjacent sites at each of which there is a nonzero probability s(0 < s < 1) of the walker being trapped. Exact analytic expressions for < n > and the average number of steps required for trapping for arbitrary s are obtained for two types of finite boundary conditions (confining and reflecting) and for the infinite periodic chain. For the latter case of boundary condition, Montroll's exact result is recovered when s is set to zero.

• 한국전기전자재료학회논문지
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• 제21권4호
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• pp.296-299
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• 2008

The effects of radio frequency (RF) source power for decoupled plasma nitridation (DPN) process on the electrical properties and Fowler-Nordheim (FN) stress immunity of the oxynitride gate dielectrics for deep nano-technology devices has been investigated. With increase of RF source power, the threshold voltage (Vth) of a NMOS transistor(TR) decreased and that of a PMOS transistor increased, indicating that the increase of nitrogen incorporation in the oxynitride layer due to higher RF source power induced more positive fixed charges. The improved off-current characteristics and wafer uniformity of PMOS Vth were observed with higher RF source power. FN stress immunity, however, has been degenerated with increasing RF source power, which was attributed to the increased trap sites in the oxynitride layer. With the experimental results, we could optimize the DPN process minimizing the power consumption of a device and satisfying the gate oxide reliability.

• E2M - 전기 전자와 첨단 소재
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• 제7권5호
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• pp.383-388
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• 1994

Deep levels in semi-insulating GaAs were observed by thermally stimulated current(TSC) measurement In the temperature ranges of 100-300K Tl(E$\_$c/-0.18eV), T2(E$\_$c/-0.20eV), T3(E$\_$c/-0.31eV), T4(E$\_$c/-0.40eV), and T5(E$\_$c/-O.43eV) traps have been observed. The TI, T2, and T5 traps seem to be related to the V$\_$As/, V$\_$Ga/-complex, and As$\_$Ga/$\^$++/ respectively. T4 trap is considered with respect to V$\_$Ga/-V$\_$As/ complex.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1990년도 추계학술대회 논문집
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• pp.98-101
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• 1990

In order to investigate the laser effects resulted from the behaviors of carriers for BOPP film, experiment of TSC were carried out on the specimen with 15[$\mu\textrm{m}$] thick irradiated by He-Ne laser. The TSC spectras were observed in the temperature range of -100[$^{\circ}C$] to 130[$^{\circ}C$] with the electric field of 20∼60[MV/m], had show four of the distinguished peak such as ${\alpha}$$_1$, ${\alpha}$$_2$, ${\beta}$ and ${\gamma}$, which appeared at 115, 80, 17 and -30[$^{\circ}C$] respectively. Specially, ${\alpha}$$_1$ was observed and anomalous TSC flowing in the same direction as the charging current on the high-electric field such as 50∼60[MV/m]. In according on the consequences obtained from the studies, the origin of ${\alpha}$$_1$peak was attributed to the detrapping process form trap with 2.88[eV] deep of injected space charge from the chathode in the crystaline regions. The origin of ${\alpha}$$_2$ peak was regarded as the detrapping process of ions trapped with 0.9[eV] deep originated from impurity-ion remained in the specimen during production process of the material, in the crystalline regions. The origin of ${\beta}$ peak was concluded to be due to the depolarization process of "C=0"dipole with the activation energy of 0.75[eV] in the amorphous regions. The origin of ${\gamma}$ peak was responsible to the process combined with the depolarization of "CH$_3$", chain segment, with the activation energy of carriers from the shallow trap with 0.4[eV], in he amorphous regions.

• Ocean and Polar Research
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• 제44권3호
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• pp.221-233
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• 2022

A sediment trap had been deployed at 1250 m depth in the Eastern Tropical Pacific (ETP) from September 2009 to July 2010, with the aim of understanding the temporal and vertical variability of particle flux. During the monitoring period, total particle flux varied from 12.4 to 101.0 mg m^-2day^-1, with the higher fluxes in January-March 2010. Biogenic particle flux varied in phase with the total particle flux. The increase in total particle flux during January-March 2010 was attributed to the enhanced biological production in the surface layer caused by wind-driven mixing in response to the seasonal shifts in the location of the Intertropical convergence zone. The export ratio (e-ratio) was estimated using the particulate organic carbon flux and satellite-derived net primary production data. The estimated e-ratios changed between 0.8% and 2.8% (1.4±0.6% on average). The ratio recorded in the negative phase of Pacific decadal oscillation (PDO) was similar to the previous results obtained from the ETP during the 1992/93 periods in the positive phase of PDO. This suggests that the regime shift of the PDO is not related to the carbon export ratio.