• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2009.05a
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• pp.239-241
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• 2009

DRIE(Deep Ion Reactive Etching) 공정은 실리콘 웨이퍼를 식각하는 기술로서 Si wafer 비아 홀 제조에 주로 사용되고 있다. 즉, DRIE 공정은 식각 및 보호층 증착을 반복함으로써 직진성 식각을 가능하게 하는 공정이다. 또한, 3차원 적층 실장에서 Si wafer 비아 홀에 결함없이 효과적으로 구리 충진을 하기 위해서는 직각형 via보다 경사벽을 가진 via가 형상적으로 유리하다. 본 연구에서는 3차원 적층을 위한 Si wafer 비아 홀의 결함 없는 효과적인 구리 충진을 위해, DRIE 공정을 이용하여 기존의 경사벽을 가지는 via 흘 형성 공정보다 더욱 효과적인 공정을 개발하였다.

• KSTLE International Journal
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• v.9 no.1_2
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• pp.10-12
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• 2008

Silicon micro-patterns were fabricated on Si (100) wafers using photolithography and DRIE (Deep Reactive Ion Etching) fabrication techniques. The patterned shapes included micro-pillars and micro-channels. After the fabrication of the patterns, the patterned surfaces were chemically modified by coating Z-DOL (perfluoropolyether, PFPE) thin films. The surfaces were then evaluated for their micro-friction behavior in comparison with those of bare Si (100) flat, Z-DOL coated Si (100) flat and uncoated Si patterns. Experimental results showed that the chemically treated (Z-DOL coated) patterned surfaces exhibited the lowest values of coefficient of friction when compared to the rest of the test materials. The results indicate that a combination of both the topographical and chemical modification is very effective in reducing the friction property. Combined surface treatments such as these could be useful for tribological applications in miniaturized devices such as Micro/Nano-Electro-Mechanical-Systems (MEMS/NEMS).

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.11a
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• pp.332-332
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• 2015

Block Copolymer lithography는 deep nano-scale device 제작을 위한 기존의 top-down방식의 photo-lithography를 대체할만한 기술로 많은 연구가 진행되고 있다. polystyrene(PS)/poly-methyl methacrylate (PMMA)로 구성된 BCP의 nano-scale PS mask는 일반적인 플라즈마 공정에 쉽게 damage를 입는다. 중성빔 식각을 이용하여 식각 공정 중 발생하는 BCP의 degradation을 감소시키고, 비등방성 식각 profile을 얻을 수 있으며 sidewall roughness(SWR)와 sidewall angle(SWA)가 향상되는 것을 알 수 있었다.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.11a
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• pp.141-141
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• 2012

고종횡비 10:1 비아를 Si wafer 상에 형성하기 위해 $7{\mu}m$ 직경의 마스크로 포토작업하여 Cr층을 100nm 스퍼터링하여 PR(photo resistor) 대신의 에칭 barrier 막으로 사용하였다. 얼라인, 노광, 현상을 거쳐 Cr에칭, PR 제거후 ICP(inductively coupled plasma) 공정으로 Si deep etching하여 via 직경 $10.16{\mu}m$, 깊이 $102.5{\mu}m$의 고종횡비 비아를 형성하였다. 구리필링도금을 위해서 필수적인 seed layer는 단층 또는 다층의 금속막을 스퍼터링 법으로 형성하였다. 형성된 seed layer 단면을 FE-SEM(Field emission scanning electron microscope)으로 관찰하여 내부에 seed 층의 형성 유무를 확인하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.4
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• pp.448-452
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• 2004

The micromachined variable optical attenuator(VOA) was presented in the paper. The VOA has two single mode fiber(SMF) aligned with free space and symmetric parallel plate actuator with microshutter, which can control a amount of light by driving the actuator. In the paper, analysis on driving performances of the VOA was performed and can be reduced threshold voltage through the decreasing displacement actuating range. This paper presents a VOA that is fabricated using bosch deep silicon etching process with silicon on insulator(SOD wafer. The VOA consists of driving electrode, ground electrode, actuating microshutter, and mechanical stopper. In this VOA, actuating shutter is driven by electrostatic force and the threshold voltage is close to 28V, 46V come along with the spring width of 5${\mu}{\textrm}{m}$, 7${\mu}{\textrm}{m}$ respectively. Attenuation range is measured from 2.4㏈ to 16.7㏈.

• ETRI Journal
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• v.35 no.4
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• pp.603-609
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• 2013

In this paper, we present a 600-V reverse conducting insulated gate bipolar transistor (RC-IGBT) for soft and hard switching applications, such as general purpose inverters. The newly developed RC-IGBT uses the deep reactive-ion etching trench technology without the thin wafer process technology. Therefore, a freewheeling diode (FWD) is monolithically integrated in an IGBT chip. The proposed RC-IGBT operates as an IGBT in forward conducting mode and as an FWD in reverse conducting mode. Also, to avoid the destructive failure of the gate oxide under the surge current and abnormal conditions, a protective Zener diode is successfully integrated in the gate electrode without compromising the operation performance of the IGBT.

• Proceedings of the KIEE Conference
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• 1999.07g
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• pp.3322-3324
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• 1999

This paper studies on the design and fabrication of a micro in-plane positioning actuator integrated with a microlens. Proposed in-plane actuator is a micro XY-stage which is composed of two linear comb drive actuators being orthogonal to each other. In the fabrication of actuator, the single crystalline silicon substrate anodically bonded with a #7740 glass substrate is used because of simple release and passivation. The structure of actuator is formed on the silicon facet of bonded fixture by chlorine-based deep RIE and then released by isotropic wet etching of glass (#7740) in hydrofluoric acid solution. Fabricated actuator has a large travel range up to $30({\pm}15){\mu}m$ and high resolution less than 0.01f1l1l in each direction. Experimented resonant frequency of this actuator is 630Hz. The micro-Fresnel lens is fabricated on the square-shape glass structure prepared in the center of actuator.

• Proceedings of the KIEE Conference
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• 1999.07g
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• pp.3292-3294
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• 1999

In this paper, electrostatic scanner mirror for optical pick-up head is designed and fabricated. The mirror size is $20{\mu}m{\times}2400{\mu}m{\times}2400{\mu}m$ and torsional beam size is $10{\mu}m{\times}20{\mu}m{\times}500{\mu}m$. Static deflection angle is calculated ${\pm}0.4$ degrees when the maximum driving voltage is 20 V. Silicon mirror was fabricated using KOH etching and deep RIE. For passivation of the patterned mirror from KOH solution, parylene thin film was used and its usefulness has been verified. Driving electrode was fabricated using UV LIGA process. Mirror and electrode were bonded.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.2392-2394
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• 2005

This paper presents a tuneable bandstop resonator with two possible configurations, it can be used to tune its center frequency, or it can be used to tune its bandwidth. The tuneable bandstop resonator has potential application in microwave communications receivers, where it can be used to tune out interfering signals. The proposed resonator is comb actuated, where the resonator's displacement produces different values of frequency or bandwidth, this is achieved by decoupling electromagnetic energy from a main transmission line. The proposed fabrication process for the resonator is by anodic bonding pyrex glass and tow resistivity silicon, where the comb resonator structure is patterned by deep reactive ion etching (DRIE). This paper presents the resonator and actuator design in both configurations, as well as the fabrication process intended for its development.

• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1912-1913
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• 2003

This paper presents a variable optical attenuator (VOA) that is fabricated using bosch deep silicon etching process [1] with silicon-on- insulator (SOI) wafer. The VOA consists of driving electrode, ground electrode, actuating mirror, and mechanical slower. In this VOA, actuating mirror is driven by electrostatic force [2] and the pull-in voltage is close to 13V, 28 V, 46V come along with the spring width of $3{\mu}m,\;5{\mu}m,\;7{\mu}m$ respectively.