• KOREAN JOURNAL OF CROP SCIENCE
• /
• v.40 no.4
• /
• pp.437-443
• /
• 1995

Concerns on use of excess amount of chemical fertilizier and pesticide in current farming system turns both of the producer and consumer of agricultural products to an organic farming which use a less chemicals and more natural manure. Rice-duck farming system is one of the strategy to meet the purpose and this experiment was carried out to find the effect of the rice-duck farming system on the quality and yields of rice. 20day-old rice seedling were mechanically transplanted in sandy-loam paddy field and 21 day-old ducks were raised from 3 weeks after transplanting with population of 30 heads per 10a. The plots were consists of reduce fertilizer(70%) with and without duck-raising. The conventional fertilizer treatment without duck-raising was used as check. The results obtained are summarized as follows. The weeds population of test plots which were raised with duck for 3 consecutive years was less than that of test plots without duck-raising, though a speciffic population of Echinochola crusgallis were increased. The weed control effect was higer in duck-raising than in check at the maximum tillering stage but, not at later stages of rice plant. It was found that the small animals and insects inhibiting in the rice field were reduced by duck-treatment, however, there were also damages of grass leaf roller at booting stage in the plots of duck-raising. In rice-duck plot, dark green leaf color were found: 41.8 of SPAD value than 38.6 of SPAD in check plot. Higher root activity and surface soil oxidation were also observed in rice-duck plot than check plot. 3% of the increase in yield was observed by duck-treatment. However, the expected increase of the palatability wsa not observed. This may be due to the unfavorable weather conditions during the rice growing in this expriment.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.324-325
• /
• 2014

Quantum wells infrared photodetectors (QWIPs) have been used to detect infrared radiations through the principle based on the localized stated in quantum wells (QWs) [1]. The mature III-V compound semiconductor technology used to fabricate these devices results in much lower costs, larger array sizes, higher pixel operability, and better uniformity than those achievable with competing technologies such as HgCdTe. Especially, GaAs/AlGaAs QWIPs have been extensively used for large focal plane arrays (FPAs) of infrared imaging system. However, the research efforts for increasing sensitivity and operating temperature of the QWIPs still have pursued. The modification of heterostructures [2] and the various fabrications for preventing polarization selection rule [3] were suggested. In order to enhance optical performances of the QWIPs, double barrier quantum well (DBQW) structures will be introduced as the absorption layers for the suggested QWIPs. The DBWQ structure is an adequate solution for photodetectors working in the mid-wavelength infrared (MWIR) region and broadens the responsivity spectrum [4]. In this study, InGaAs/GaAs/AlGaAs double barrier quantum well infrared photodetectors (DB-QWIPs) are successfully fabricated and characterized. The heterostructures of the InGaAs/GaAs/AlGaAs DB-QWIPs are grown by molecular beam epitaxy (MBE) system. Photoluminescence (PL) spectroscopy is used to examine the heterostructures of the InGaAs/GaAs/AlGaAs DB-QWIP. The mesa-type DB-QWIPs (Area : $2mm{\times}2mm$) are fabricated by conventional optical lithography and wet etching process and Ni/Ge/Au ohmic contacts were evaporated onto the top and bottom layers. The dark current are measured at different temperatures and the temperature and applied bias dependence of the intersubband photocurrents are studied by using Fourier transform infrared spectrometer (FTIR) system equipped with cryostat. The photovoltaic behavior of the DB-QWIPs can be observed up to 120 K due to the generated built-in electric field caused from the asymmetric heterostructures of the DB-QWIPs. The fabricated DB-QWIPs exhibit spectral photoresponses at wavelengths range from 3 to $7{\mu}m$. Grating structure formed on the window surface of the DB-QWIP will induce the enhancement of optical responses.

• Current Research on Agriculture and Life Sciences
• /
• v.31 no.1
• /
• pp.56-60
• /
• 2013

This research was carried out to produce rainbow-colored roses from white cut rose, Rosa hybrida 'Denice', to meet customers' desire of having various colors of roses. The higher temperature of dyeing solution used, the faster coloring time surveyed. In high temperature, the flowering speed of cut flower accelerated and after treating more than 4 hours, the edges of flowers became too dark or dry. In the condition of concentration of dyeing solution, $11g{\cdot}L^{-1}$ dyed faster than $7.5g{\cdot}L^{-1}$, however, no differences between $15g{\cdot}L^{-1}$ and $11g{\cdot}L^{-1}$ have observed. It looked fast coloration at the stage of early blooming, but all three different petal opening stages need similar time to get even coloration from outer to inner petals. For the consideration of commercial value, flowers with 3-4 petals opened are better quality than flowers with less petals opened. It was possible to make rainbow-colored rose by dipping 'Denice' with 3 primary color combination, Hot Pink, True Blue, and Yellow dyes, at the best result conditions of $20^{\circ}C$ solution temperature, 3-4 petals opening stage, 11g/L concentration of dye solution and 3 hours dipping, respectively.

• Research in Plant Disease
• /
• v.15 no.3
• /
• pp.209-216
• /
• 2009

During the period of June, 2005 to May, 2008, 44 host plants infected with powdery mildew were collected in the Jeon-ju and Jang-su districts of Jeonbuk province and in the Jang-sung district of Jeonnam province. The hyperparasites, Ampelomyces were confirmed in 12 plant species. Most of the pycnidium shapes of Ampelomyces were circular or oval shaped, and the sizes were different even within the same host plant, and also the color of pycnidium was ranged from light brown to dark brown. Ampelomyces species were isolated from 4 hosts including Impatiens balsamina L., Cucurbita pepo, Rudbeckia laciniata var. elatier and Youngia sonchifolia, and thus the most appropriate 12 Ampelomyces strains for the current experiment were selected. When analyzing the selected 12 strains' incubational and nutritional characteristics, the malt extract agar was the most appropriate media. When investigating the effect of osmotic pressure on the spore germination, 0.15M NaCl concentration was the optimum germination concentration. When the isolated Ampelomyces sp. was tested in-vitro, it was found to be effective to control in other plant pathogens, isolated Ampelomyces showed no pathogenicity to the plant. strains isolated . studied on rDNA ITS sequence analysis. The rDNA ITS sequence data of Ampelomyces sp. isolate BSLAH16 from Impatiens balsamina L. were analyzed and identified.

• Korean journal of communication and information
• /
• v.36
• /
• pp.78-108
• /
• 2006

This study examines the digital divide, one of the main issues in digital media environment, in relation with the digital literacy on the perspective of audience welfare. The study explores the current state of audience welfare policy with regard to the issue of digital divide which can be seen as the dark side of this flourishing digital technology society. The barriers and enablers of the digital divide are discussed with the question of how these factors are related with the digital literacy competence of audience. It has been criticized that both the research efforts and the policy implementations on the digital divide had been set within the limitation of physical access to the digital equipment and technology. Recent studies suggested that the digital divide should be viewed in dynamic interaction of a variety of factors such as psychological dispositions, inner attitudes toward digital media, competence and ability of audiences as well as socio-economic status of individuals. Despite the recent inclusive discussion, however, the role of digital literacy in the digital divide remains unexplored. It should be noted that the question of access is not just to do with equipment, but with skills and knowledge that are required to use equipment. This notion suggests an important implication for the digital divide policy establishment. This study proposes a two-stage solution for reducing the digital divide, in which the first stage focuses on physical access and technology education and the second stage on the digital literacy education.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.08a
• /
• pp.210.2-210.2
• /
• 2013

현재 국내의 상용화된 디지털 방식 X-선 영상장치에서 간접변환방식은 대부분 CsI를 사용하고 있으며, X-선 흡수에 의해 전기적 신호를 발생시키는 직접변환방식은 Amorphous Selenium(a-Se)을 사용한다. a-Se은 진공 중에 녹는점이 낮아 증착시 substrate의 온도에 따라 민감한 변화를 보인다. 본 연구에서는 간접변환방식에 비해 높은 영상의 질을 획득할 수 있는 직접변환방식의 a-Se기반 X-선 검출기 제작 시 substrate에 인가된 온도에 따른 특성을 연구하여 최적화 된 substrate의 온도를 알고자 한다. 본 실험에서는 glass에 투명한 전극물질인 Indium Tin Oxide (ITO)가 electrode로 형성된 substrate를 사용하였으며 그 상단에 a-Se을 Physical Vapor Deposition (PVD)방식을 거쳐 X-선 검출기 샘플을 제작하였다. PVD 공정 시 네 개의 보트에 a-Se 시료를 각각 100g씩 총 400g을 넣고, $5{\times}10-5Torr$까지 진공도를 낮추었다. 보트의 온도는 $270^{\circ}C$에서 40분 $290^{\circ}C$에서 90분으로 온도를 인가하여 a-Se을 기화시켜 증착하였다. 증착 시 substrate 온도를 각각 $20^{\circ}C$, $40^{\circ}C$, $60^{\circ}C$, $70^{\circ}C$ 네 종류로 나누어 실험을 진행하였다. 끝으로 증착된 a-Se 상단에 Au를 PVD방식으로 electrode를 형성시켜 a-Se기반의 X-선 검출기 샘플 제작을 완료하였다. 제작된 a-Se기반의 X-선 검출기 샘플의 두께는 80에서 $85{\mu}m$로 온도에 따른 차이가 없었다. 이후에 전기적 특성을 평가하기위해 electrometer와 oscilloscope를 이용하여 Dark current와 Sensitivity를 측정하여 Signal to Noise Ratio(SNR)로 도출하였으며 Scanning Electron Microscope(SEM) 표면 uniformity를 관찰하였다. 또한 제작된 a-Se기반 X-선 검출기 샘플의 hole collection 성능을 확인하고자 mobility를 측정하였다. 측정결과 a-Se의 work function을 고려한 $10V/{\mu}m$기준에서 70kV, 100mA, 0.03sec의 조건의 X-선을 조사 하였을 때 Sensitivity는 세 종류의 검출기 샘플이 15nC/mR-cm2에서 18nC/mR-cm2으로 비슷한 양상을 나타내었지만, substrate온도가 $70^{\circ}C$때의 샘플은 10nC/mR-cm2이하로 저감됨을 알 수 있었다. 그리고 substrate온도 $60^{\circ}C$에서 제작된 검출기 샘플의 전기적 특성이 SNR로 환산 시, 15.812로 가장 우수한 전기적 특성을 나타내어 최적화 된 온도임을 알 수 있었다. SEM촬영 시 온도상승에 따라 표면 uniformity가 우수하였으며, Mobility lifetime에서는 $60^{\circ}C$에서 제작된 검출기 샘플이 deep trap 수치가 높아 hole이 $0.04584cm2/V{\cdot}sec$로 $0.00174cm2/V{\cdot}sec$의 electron보다 26.34배가량 빠른 것을 확인하였다. 본 연구를 통해 a-Se증착 시, substrate에 인가된 온도는 균일한 박막의 형성 및 표면구조에 영향을 미치며 온도가 증가할수록 안정적인 전기적 특성을 나타내지만 $70^{\circ}C$이상일 시, a-Se층의 결정화가 생겨 deep trap을 발생시켜 전기적 특성이 저하됨을 확인 할 수 있었다. 따라서 증착 시의 substrate의 온도 최적화는 a-Se기반 X-선 검출기의 안전성 및 성능향상을 위해 불가피한 요소가 된다고 사료된다.

• Journal of the Korean Society of Radiology
• /
• v.4 no.2
• /
• pp.27-30
• /
• 2010

A X-ray optical modulator measures x-ray dose using optical transmissivity ratio change of the liquid crystal cell. To apply in this optical modulator, we made photoconductor films and compared electrical properties of this films in this study. Photoconductors are deposited on ITO glass with $200{\mu}m$ using the percipitation method and print method. I-V test was conducted to alalyze electrical properties of this films and measured darkcurrent and SNR was acquired using the measured dark current and sensitivity. As a result of this measurements, $HgI_2$ film made by precipitation method is lower(about 40%) darkcurrent than $HgI_2$ films made by precipitation method and sensitivity is two times greater than print method. And we knew that $HgI_2$ films were also 10~25 times greater SNR at $1v/{\mu}m$ than $PbI_2$, PbO, CdTe film made by precipitation method. This results suggest that $HgI_2$ films made by precipitation method has improved characteristics of x-ray dose meter by applying in x-ray optical modulator.

• Economic and Environmental Geology
• /
• v.54 no.5
• /
• pp.595-603
• /
• 2021

Sand layer distribution, which is the main target of river and land aggregate resources, mainly belongs to alluvial and river sedimentary environments among the Quaternary sedimentary environments. The distribution of aggregate resources in the area of Geumsan-gun, Chungcheongnam-do is characteristically developed around a sedimentation environment in which intrusive meandering river dominate. Although the area around Bonhwangcheon Stream and the area near the confluence of small streams are small, the river floodplain develops and corresponds to the aggregate distribution area. The sedimentary layer formed in the sedimentary environment such as colluvial deposits or alluvial fan deposits has a relatively low distribution rate of aggregate resources. The vertical distribution of the Quaternary sedimentary layers in the Geumsan-gun region ranges from about 5 to 12 m and has an average Quaternary sedimentary thickness of 8 m. The aggregate-bearing section has an average thickness of 3.6 m, and the average grain size is about 21% clay-silt, 67% sand, and 12% gravel. The main characteristics of the aggregate-bearing section are that coarse-grained sand predominates, and gravel is sub-angular or sub-rounded, and the sorting is generally poor and has a massive form of deposits, and the soil colour ranges from dark grey to yellowish-brown. In Geumsan-gun, the most likely distribution area for aggregate development is the alluvial sedimentary and river sedimentary layers distributed along the current and former riverbeds of the main Geumgang River, Bonhwangcheon and small River tributaries.

• Korean Journal of Materials Research
• /
• v.28 no.11
• /
• pp.659-662
• /
• 2018

We report the properties of infrared photodetectors based on two kinds of quantum dots(QDs): i) 2.0 ML InAs QDs by the Stranski-Krastanov growth mode(SK QDs) and ii) sub-monolayer QDs by $4{\times}[0.3ML/1nm\;In_{0.15}Ga_{0.85}As]$ deposition(SML QDs). The QD infrared photodetector(QDIP) structure of $n^+-n^-(QDs)-n^+$ is epitaxially grown on GaAs (100) wafers using molecular-beam epitaxy. Both the bottom and top contact GaAs layers are Si doped at $2{\times}10^{18}/cm^3$. The QD layers are grown with Si doping of $2{\times}10^{17}/cm^3$ and capped by an $In_{0.15}Ga_{0.85}As$ layer at $495^{\circ}C$. The photoluminescence peak(1.24 eV) of the SML QDIP is blue-shifted with respect to that (1.04 eV) of SK QDIPs, suggesting that the electron ground state of SML QDIP is higher than that of the SK QDIP. As a result, the photoresponse regime(${\sim}9-14{\mu}m$) of the SML QDIP is longer than that (${\sim}6-12{\mu}m$) of the SK QDIP. The dark current of the SML QDIP is two orders of magnitude smaller value than that of the SK QDIP because of the inserted $Al_{0.08}Ga_{0.92}As$ layer.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.32 no.2
• /
• pp.45-50
• /
• 2022

Ga₂O₃ thin films were grown on n-type Si substrates at various growth temperatures of 500, 550, 600, 650 and 700℃. The Ga₂O₃ thin films grown at 500℃ and 550℃ were characterized as featureless flat surface. Grown at higher temperatures (600, 650, and 700℃) showed very rough surface morphology. To figure out the annealing effect on the thin films grown at relatively low temperatures (500, 550, 600, 650 and 700℃), the Ga₂O₃ films were thermally treated at 900℃ for 10 minutes. Crystal structure of the Ga₂O₃ films grown at 500 and 550℃ were changed from amorphous to polycrystalline structure with flat surface. Ga₂O₃ film grown at 550℃ was chosen for the fabrication of a Schottky barrier diode (SBD). Electrical properties of the SBDs depend on the thermal treatment were evaluated. A MSM type photodetector was made on the low temperature grown Ga₂O₃ thin film. The photocurrent for the illumination of 266 nm wavelength showed 5.32 times higher than dark current at the operating voltage of 10 V.