• Bulletin of the Korean Chemical Society
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• 제2권4호
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• pp.129-132
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• 1981

Polystyrene was degraded by using a vibrating ball mill. The viscosities and molecular weights of the degraded products were measured, and the decrease of viscosity $[\eta}$ with ${\dot{s}}$ (rate of shear) observed for the degraded products were analyzed by applying the Ree-Eyring equation for viscous flow. The variation of the parameters $x_2$/{\alhpa}_2,{\beta}_2$ and $x_1{\beta}_1/{\alpha}_1$ in the equation were explained by the fracture of polymer molecules by mechanical force. The electron paramagnetic resonance spectrum of the degraded sample was taken, and it was confirmed that free radicals were produced by the chain-scission of polystyrene.

• 센서학회지
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• 제14권1호
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• pp.22-27
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• 2005

A thermoelectric flow sensor for small quantity of gas flow rate was fabricated using silicon wafer semiconductor process and bulk micromachining technology. Evanohm R alloy heater and chromel-constantan thermocouples were used as a generation heat unit and sensing parts, respectively. The heater and thermocouples are thermally isolated on the $Si_{3}N_{4}/SiO_{2}/Si_{3}N_{4}$ laminated membrane. The characteristics of this sensor were observed in the flow rate range from 0.2 slm to 1.0 slm and the heater power from 0.72 mW to 5.63 mW. The results showed that the sensitivities $(({\partial}({\Delta}V)/{\partial}(\dot{q}));{\;}{\Delta}V$ : voltage difference, $\dot{q}$ : flow rate) were increased in accordance with heater power rise and decreasing of flow rate.

• 복식
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• 제35권
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• pp.181-193
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• 1997

The objectives of this study were to classify bedclothes purchase motives and to examine how bedclothes purchase mo-tives and design preferences very accord-ing to age and income. Samples were 217 housewives residing in metropolitan area. Questionnaire included 17 Likert type items of bedclothes pur-chase motive measure 12 items of color preference 7 items of pattern (floral geo-metric abstract stripe plaid polka dot, and paisley pattern). The results of the study were as fol-lows. 1. 5 factors of bedclothes purchase mo-tives were derived by factor analysis ; F .1 'design': F 2. "brand' ; F.3. 'deficiency'; F. 4. 'fabric' F.5. 'economical reason' 2. Subjects perceived design and utility area to be important motives for bed-clothes purchase. 3. Cholor preference of bedclothes was in the order of white pale blue pale green and pale orange. Pattern preference was in the order of stripe plaid solid color floral and polka dot pattern. The combi-nation of patterned fabric and solid color fabric was liked better than the combina-tion of analogic color and the combination of contrasting color. 4. The women in their 20's liked navy blue red stripe plaid pattern and solied color better than 30's and 40's . 40's liked abstract and paisley pattern better then 20's and 30's 5. Low income group lied navy blue and solid color fabric more than the mid-dle and high income group and liked ab-stract pattern less than the middle and high income group. 6. Women in their 20's perceived design to be important motive more than 30's and 40's. 30's perceived brand to be im-portant motive than 20's and 40's 7. High income group perceived design to be important motive more than the middle and low income group. Low in-come group perceived brand and fabric to be less important motives than the middle and high income group, The present findings provide that age and income had a significant effect on bedclothes purchase motives and design preferences of houesewives. The results that white color and the combination of patterned fabric and solid color fabric were liked best indicated that women prefered clean image and chacteristics de-sign of bdeclothes.

• 마이크로전자및패키징학회지
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• 제29권4호
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• pp.49-53
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• 2022

본 연구는 최적화된 전기발광 성능을 가진 양자점 전계 발광 다이오드 소자를 제작하기 위해 RF sputtering 기법으로 Zn_0.85Mg_0.15O 박막을 전자수송층으로 적용하였다. 일반적으로 양자점 전계 발광 다이오드에서 ZnO 나노입자는 적절한 에너지 준위를 가지고 있어 전자 이동도가 빠르고 용액 처리가 용이하다는 장점으로 전자 수송층으로 널리 사용되는 재료이다. 그러나, 용액형 ZnO 나노입자의 불안정성 문제는 아직 해결되지 않고 있다. 이를 해결하기 위해 본 연구에서는 ZnO에 15 % Mg을 도핑한 ZnMgO 박막을 RF sputtering법으로 제작하고 전자수송층으로 적용한 소자를 최적화하였다. 최적화된 ZnMgO 박막을 이용한 소자는 최대 휘도 15,972 cd/m², 전류효율 7.9 cd/A를 보였다. Sputtering ZnMgO 박막 기반 양자점 전계 발광 다이오드 소자는 용액형 ZnO 나노입자의 문제를 해결하고 미래 디스플레이 소자 제작 기술의 적용 가능성을 확인하였다.

• 미생물학회지
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• 제33권3호
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• pp.193-198
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• 1997

본 연구에서는 유류로 오염된 환경을 생물학적으로 정화하는 방법의 확립을 위하여 생물계면활성제를 생산하는 세균을 유류오염지역으로부터 분리한 후, 생물계면활성제의 생산에 미치는 각종 환경요인과 분리세균의 hydrocarbon 이용능 등을 조사하였다. 유류로 오염된 해수 및 토양시료로부터 crude oil을 기질로 하여 생물계면활성제를 생산하는 172개의 균주를 순수분리하였다. 이들중에서 표면장력 감소능이 가장 우수한 SW1을 공시균주로 선정한 후, 형태학적, 배양적 및 생화학적 제반 특성을 조사하여 그 분류학적 위치를 검토한 결과 Pseudomonas속으로 판명되어, 편의상 Pseudomonas sp. SW1로 명명하였다. 각종 탄소원을 이용하여 유화활성 및 표면장력 감소능을 조사한 결과, crude oil과 n-hexadecane에서 비슷한 유화활성 및 표면장력 감소능을 나타내었다. 생물계면활성제 생산을 위한 배지 및 배양조건은 n-hexadecane 2.0%, yeast extract 0.04%, $K_{2}HPO_4$ 0.02%$KH_2PO_4$ 0.03%, $MgSO_4$ center dot $7H_2O$ 0.04%, 30^{\circ}C.$ 및 pH 7.0이었다. 상기실험에서 결정된 조건하에서 공시균을 배양한 결과, 배양 2일 후인 정지기 초기에 생물계면활성제가 가장 많이 생산되었으며, 이때 minimum surface tension은 32mN/m이었다. 또한 본 공시균은 Bunker oils, n-alkanes, branched alkanes등을 기질로 하여 생육할 수 있었다.

• 한국인쇄학회지
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• 제2권1호
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• pp.45-64
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• 1984

다색 망점 인쇄물에서 색을 측정하는데는 여러가지 방벙이 있는데, 본 논문에서는 농도 측정법과 자극치 직독법으로, 본문 Ink 화학주식회사에서 나온 SPACE Color New Apex-G Color Chart를 사용하여 두 방법의 측정 결과를 비교, 검토하였다. Process Ink 인 Y, M, C, RI 을 10, 20, 30...90, 100% 의 망점 면적 비교로 변화시켜 측정한 결과 다음과 같은 결론을 얻었다. 1. Y Ink는 가장 이상적인 Ink로 575 nm부근의 주파장을 가졌다. 2. M Ink는 다른 성분을 제일 많이 함유하고 있었다. 3. 원색 분해할 때에 B1 판의 필요성이 확인되었다. 4. 색의 혼합 결과는 M+Y 의 혼합 때 가장 결과가 좋았다.

• 한국광학회:학술대회논문집
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• 한국광학회 2009년도 동계학술발표회 논문집
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• pp.133-134
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• 2009

Cold temperature development (CTD) of electron beam (EB) patterned resists and subsequent dry etching were investigated for fabrication of nano-patterned Niobium (Nb). Bulky Nb fims on GaAs substrates were deposited with EB evaporation. Line patterns on Nb cathode were fabricated by EB patterning and reactive ion etching (RIE). Size deviations of nano-sized line patterns from CAD designed patterns are dependent on the EB total exposure, but it can be improved by CTD of EB-exposed resist. Line patterns of 10 to 300 nm widths of EB-exposed resist patterns were drawn under various exposure conditions of $0.2{\mu}s$/dot (total 240,000 dot) with a constant current (50 pA). Compared with room temperature development (RTD), the CTD improves pattern resolution due to the suppression of backscattering effect. RIE with $CF_4$ was performed for formation of several nano-sized line patterns on Nb. Each EB-resist patterned samples with RTDs and CTDs were etched with two different $CF_4$ gas pressures of 5 Pa. Nb etching rate increases while GaAs (or ZEP) etching rate decreases as the chamber pressure increases. This different dependent of the etching rate on the $CF_4$ pressure between Nb and GaAs (or ZEP) has a significant meaning because selective etching of nano-sized Nb line patterns is possible without etching of the underlying active layer.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.341-341
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• 2016

The discovery of light emission in nanostructured silicon has opened up new avenues of research in nano-silicon based devices. One such pathway is the application of silicon quantum dots in advanced photovoltaic and light emitting devices. Recently, there is increasing interest on the silicon quantum dots (c-Si QDs) films embedded in amorphous hydrogenated silicon-nitride dielectric matrix (a-SiNx: H), which are familiar as c-Si/a-SiNx:H QDs thin films. However, due to the limitation of the requirement of a very high deposition temperature along with post annealing and a low growth rate, extensive research are being undertaken to elevate these issues, for the point of view of applications, using plasma assisted deposition methods by using different plasma concepts. This work addresses about rapid growth and single step development of c-Si/a-SiNx:H QDs thin films deposited by RF (13.56 MHz) and ultra-high frequency (UHF ~ 320 MHz) low-pressure plasma processing of a mixture of silane (SiH4) and ammonia (NH3) gases diluted in hydrogen (H2) at a low growth temperature ($230^{\circ}C$). In the films the c-Si QDs of varying size, with an overall crystallinity of 60-80 %, are embedded in an a-SiNx: H matrix. The important result includes the formation of the tunable QD size of ~ 5-20 nm, having a thermodynamically favorable <220> crystallographic orientation, along with distinct signatures of the growth of ${\alpha}$-Si3N4 and ${\beta}$-Si3N4 components. Also, the roles of different plasma characteristics on the film properties are investigated using various plasma diagnostics and film analysis tools.

• 터널과지하공간
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• 제20권2호
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• pp.97-104
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• 2010

가속 크리프 거동을 보이는 재료의 파괴를 설명하기 위하여 재료 파괴식($\ddot{\Omega}=A{(\dot{\Omega})}^\alpha$, $\Omega$는 변위와 같은 측정가능한 양을 나타낸다)이 사용된다. 상수 A와 $\alpha$는 주어진 측정 자료를 곡선적합하여 얻는다. 본 연구에서는 재료 파괴식을 이용하여 터널의 파괴시간을 예측하였고, 재료 파괴식을 적용하기 위하여 4가지 곡선적합기법이 사용되었다. 4가지 곡선적합기법 중 로그속도-로그가속도기법, 로그시간-로그속도기법, 역속도법은 선형최소자승법을 이용하고 비선형최소자승기법은 Levenberg-Marquardt 알고리즘을 이용한다. 로그속도-로그가속도기법은 재료 파괴식을 대수형태로 만들어 해석을 하기 때문에 터널의 파괴시간 예측에 재료 파괴식을 적용하는 것이 타당한지에 대한 근거를 제시한다. 로그속도-로그가속도기법에 따른 자료의 상관계수가 0.84로 비교적 높게 나타났기 때문에 재료 파괴식을 터널의 파괴시간 예측에 적용하는 것이 타당하다고 판단된다. 실제 파괴시간과 4가지 곡선적합기법으로부터 얻은 예측 파괴시간을 비교한 결과 로그시간-로그속도기법이 가장 우수한 결과를 보여주는 것으로 나타났다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.148-148
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• 2015

Over the past several years, Colloidal core/shell type quantum dots lighting-emitting diodes (QDLEDs) have been developed for the future of optoelectronic applications. An inverted-type quantum-dot light-emitting-diode (QDLED), employing low work function organic material polyethylenimine ethoxylated(PEIE) (<10 nm)[1] modified ZnO nanoparticles (NPs) as electron injection and transport layer, was fabricated by all solution processing method, instead of electrode in the device. The PEIE surface modifier incorporated on the top of the ZnO NPs film, facilitates the enhancement of both electorn injection into the CdSe-ZnS QD emissive layer by lowering the workfunction of ZnO from 3.58eV to 2.87eV and charge balance on the QD emitter. In this inverted QDLEDs, blend of poly (9,9-di-n-octyl-fluorene-alt-benzothiadiazolo) and poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine] are used as hole transporting layer (HTL) to improve hole transporting property. At the operating voltage of 7.5 V, the QDLED device emitted spectrally orange color lights with high luminance up to 11110 cd/m2, and showed current efficiency of 2.27 cd/A.[2]