• Journal of the Korean Vacuum Society
• /
• v.4 no.1
• /
• pp.12-17
• /
• 1995

Diamondlike carbon(DLC)films having good characteristics in mechanical and optical properties, were synthesized by rf-plasma enhanced chemical vapor deposition method. Methane, methane-hydrogen, or methane-argon were used as source gases. The infrared transparency and composition of the films were investigate. Especially, the anti-reflection effect of KLC film in infrared region was confirmed by depositing it on Ge/Si sample. When DLC films were deposited on the plastic substrates and thermal distortion, which were originated before and during deposition, respectively, played a role as a crack source of the films.

• Journal of Korean Ophthalmic Optics Society
• /
• v.6 no.1
• /
• pp.87-91
• /
• 2001

The a-C:H films have been grown on the glass substrate by PECVD method, where plasma was generated with a 60 Hz line power source. The carbonization is checked from peak intensities of D($sp^3$) and G($sp^2$) peaks in Raman spectra and is analyzed using the Gaussian convolution method of spectrum. Both the bonding strength of C-H and the ratio of $sp^3$ to $sp^2$ in bonding are found to be slightly dependent of partial pressure of $C_2H_2$.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2000.02a
• /
• pp.130-130
• /
• 2000

타이타늄(CP Ti)과 타？늄합금은 인체의 골격을 구성하고 있는 물질과 가장 흡사한 물리적 성질과 우수한 생체적합성으로 인해 임플란트용 재료로 많이 사용되고 있으며, 최근에 인공관절이나 치근으로의 사용이 증가하고 있다. 그러나 교합면에서의 취약한 마모특성으로 인해 wear debris에 의한 골 흡수 및 이완 등을 야기하는 문제점으로, 이의 개선에 관한 연구가 활발히 진행되어 왔다. 다이아몬드상 카본 (Diamond-Like-Carbon) 박막은, 다이아몬드와 유사한 높은 경도, 내마모성 그리고 화학적 안정성 등의 매우 우수한 물리화학적 특성을 가지고 있는 박막재료로 고체 윤활박막으로서 hard disk나 VCR head drum의 보호막, 우주항공기의 bearing 재료코팅 등으로의 적용이 최근에 급격히 증가하고 있다. 본 연구에서는 이와 같은 특성을 지닌 다이아몬드상 카본 박막의 생체재료로의 적용을 위해, CP Ti과 Ti-6Al-4V에 13.56MHz를 사용하는 r.f PACVD법으로 DLC를 증착하여 생체적합적 특성을 조사하였다. C6H6 가스를 사용하여 1$\mu\textrm{m}$의 두께로 DLC 박막을 증착하였으며, 기판과의 밀찰력 향상을 위해 Si을 증간층으로 합성하였다. 마모특성은 pin-on-disk type wear tester을 사용하였으며 직경 5mm의 ruby ball로 실험을 수행하였다.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2007.11a
• /
• pp.164-165
• /
• 2007

Si(중간층)/DLC(diamond-like carbon)막은 스퍼터와 이온소스(ion source)법에 의한 복합방식(hybrid method)을 이용하여 3mTorr의 반응가스 벤젠($C_6H_6$)분위기에서 Si wafer에 기판온도 $130^{\circ}C$로 180분간 증착하였다. 평가는 표면과 단면에 대해 주사전자현미경(scanning electron microscopy, SEM)과 투자전자현미경(trasmission electron microsope, TEM)으로 관찰하였다. 경도와 마찰계수는 나노인텐터(nanoindetor)와 마모시험기를 이용하였으며, 박막의 구조는 라만스펙트럼으로 분석하였다. 그 결과 박막의 두께는 약 $0.9{\mu}m$, 표면조도는 약 $0.34{\sim}1.64nm$로 평탄한 표면을 가지며 경도는 약 $35{\sim}37GPa$, 마찰계수는 약 $0.02{\sim}0.07$로 관찰되었다. 라만분광법과 전자회절패턴에 의해 IG/ID의 함량비는 $0.54{\sim}0.59$로 $sp^2$와 $sp^3$가 혼재된 전형적인 비정질 구조임을 확인하였다.

• Journal of Korean Vacuum Science & Technology
• /
• v.3 no.1
• /
• pp.54-58
• /
• 1999

We deposited diamond-like carbon (DLC) films using ion beam sputtering of a graphite target on flat substrates for use as a thin film field emitter. An n-type silicon wafer, titanium-coated silicon, and indium tin oxide (ITO) coated glass were used as a substrate. All films exhibited a sudden increase in the emission after a breakdown occurred at high voltage. The morphology of the films after the breakdown depended on the substrate. On ITO and Ti substrates, the DLC film peeled off upon breakdown, but on the Si substrate the surface melting due to breakdown resulted in the formation of various structures such as a sharp point, mound, and crater. By scanning the deformed surface with a tip anode, we found that the emission was concentrated at the deformed sites, indicating that the field enhancement due to the morphology change was responsible for the increased emission.

• Journal of the Optical Society of Korea
• /
• v.13 no.1
• /
• pp.65-74
• /
• 2009

Device quality indium tin oxide (ITO) films are deposited on glass substrates and ultra-thin diamond-like carbon films are deposited as a buffer layer on ITO by a pulsed Nd:YAG laser at 355 nm and 532 nm wavelength. ITO films deposited at room temperature are largely amorphous although their optical transmittances in the visible range are > 90%. The resistivity of their amorphous ITO films is too high to enable an efficient organic light-emitting device (OLED), in contrast to that deposited by a KrF laser. Substrate heating at $200^{\circ}C$ with laser wavelength of 355 nm, the ITO film resistivity decreases by almost an order of magnitude to $2{\times}10^{-4}\;{\Omega}\;cm$ while its optical transmittance is maintained at > 90%. The thermally induced crystallization of ITO has a preferred <111> directional orientation texture which largely accounts for the lowering of film resistivity. The background gas and deposition distance, that between the ITO target and the glass substrate, influence the thin-film microstructures. The optical and electrical properties are compared to published results using other nanosecond lasers and other fluence, as well as the use of ultra fast lasers. Molecularly doped, single-layer OLEDs of ITO/(PVK+TPD+$Alq_3$)/Al which are fabricated using pulsed-laser deposited ITO samples are compared to those fabricated using the commercial ITO. Effects such as surface texture and roughness of ITO and the insertion of DLC as a buffer layer into ITO/DLC/(PVK+TPD+$Alq_3$)/Al devices are investigated. The effects of DLC-on-ITO on OLED improvement such as better turn-on voltage and brightness are explained by a possible reduction of energy barrier to the hole injection from ITO into the light-emitting layer.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.14 no.8
• /
• pp.3597-3601
• /
• 2013

In this study, a wet cleaning process, P II, using aqua-regia and sulfuric acid mixture with oxidant agent ($K_2S_2O_8$, $P_2O_5$, $KMnO_4$, $H_2O_2$ etc) is proposed to remove the metastable phase of graphite such as graphene and DLC for high quality synthetic diamonds. The process employed the conventional acid cleaning process (P I) as well as P I+P II to remove the graphite related impurities from the 200um-diamond powders synthesized at 7GPa-$1500^{\circ}C$-5minutes. The degree of cleaning after P I and P I+P II has been observed by naked-eye, optical microscopy, micro-Raman spectroscopy, and TGA-DTA. After P I+P II, the color of diamond became more vividly yellow with enhanced saturation with naked eye and optical microscopy analysis. Moreover, the disappearance of diamond-like-carbon (DLC) peak ($1440cm^{-1}$) observed by Raman spectroscopy confirmed the decrease in amount of remaining impurities. TGA-DTA results showed that the graphite impurities first started to dissolve at $770.91^{\circ}C$ after PI process. However, the pyrolysis started at $892.18^{\circ}C$ after P I+P II process because of the dissolution of pure diamonds. This result proved the effective dissolution of the metastable phase of graphite. We expect that the proposed P II process may enhance the quality of diamonds through effective removal of surface impurities.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2009.02a
• /
• pp.113.1-113.1
• /
• 2009

• Journal of Radiation Protection and Research
• /
• v.10 no.2
• /
• pp.148-154
• /
• 1985

Radiation shield design for a shipping cask, KSC-1, was evaluated to verify that the cask can be used in the transportation of a spent fuel assembly discharged from KNU 5 & 6. Radiation source term of the spent fuel assembly was calculated with the computer program ORIGEN-79, QAD-CG, ANISN-KA and DOT 3.5 codes Were used in the shielding calculations and the nuclear cross section data needed was extracted from the DLC-23/CASK library. It is concluded that KSC-1 shipping cask satisfies the requirements specified in the relevant regulations under normal conditions of transport and under accident conditions in transport.

• Korean Journal of Materials Research
• /
• v.7 no.12
• /
• pp.1047-1051
• /
• 1997

CH$_{4}$와 H$_{2}$의 혼합가스에 미량의 질소와 산소를 첨가하여 rf-플라즈마 CVD법으로 DLC막을 합성하였다. 이 때 챔버내 압력은 430mtorr, 기판에 인가된 전력은 80W였으며, H$_{2}$와 CH$_{4}$의 비율은 1:1이었다. 이 시편들에 대해 가시광선 영역과 자외선 영역에서의 투과도를 비교하였으며, 결합구조의 변화를 알아보기 위하여 FTIR 분석을 실시하였다. 질소의 경우 첨가량이 6.3%에서 17.4%으로 증가됨에 따라 전체적인 투과도값이 증가하였으며, FRIR 분석결과 wavenumber 3500 $cm^{-1}$ /의 위치에 N-H stretching band가 나타나고 2300$cm^{-1}$ /에는 nitrile의 피크가 나타났다. 이 피크들의 존재는 질소의 첨가에 의하여 interlink를 감소시킴으로써 막의 잔류응력을 현저히 감소시킬 수 있음을 의미한다. 2% $O_{2}$를 첨가한 경우 막의 투과도는 질소를 첨가한 경우보다 월등히 더 향상되었다. 질소첨가량을 증가시킴에 따라 optical band gap또한 증가되는 경향을 보였으며, 2% $O_{2}$를 첨가하였을 때 막의 optical band gap은 0.5까지 감소하였다.