• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2016.11a
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• pp.33-55
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• 2016

PVD(Physical Vapour Deposition)코팅은 70년대 미국의 Multi-arc이란 기업에 의해 질화물계나 탄화물계 피막 증착이 가능한 아크이온플레팅(Arc Ion Plating) 기술이 산업에 소개되어, 주로 내마모나 내구성을 요구하는 금형, 절삭공구, 산업용 부품 분야 등에 적용되면서 꾸준한 성장세를 거듭해 왔다. 최근 들어 PVD기술은 그 수요의 급증과 더불어 보다 진화된 형태의 코팅장치 및 코팅피막들이 산업에 소개 되고 있다. 먼저 절삭가공분야에는 new composition, nano composite, multi-element composition, multi-layer, SML(Self Modification Layer)등의 코팅피막들이 단독 또는 조합된 형태로 개발되어 철계 소재를 대상으로 고경도 소재의 고속가공, 저경도~중경도 소재의 중속~고속 광범위영역에서 동시 절삭을 가능케 하였고, 비철.비금속 소재 절삭용으로 종전의 가스방식의 DLC(a-C:H)코팅을 훨씬 능가하는 ta-C Plus(Ultra super DLC) 코팅이 개발되어 고 Si함량의 Al-Si계 합금, Cu-W계, 고 섬유 CFRP, CFRM 및 반소결 상태의 세라믹 소재들을 황삭에서 정삭까지 단일 공정으로 절삭이 가능한 고성능 공구들이 개발보급되고 있다. 금속 성형분야에는 고장력 강판을 냉간에서 성형 가능한 Lubricative multi-layer coating, 열간 또는 고온에서 성형이 가능한 functional multi layer과 이형성이 더한층 개선된 dimpled(or embossed) functional multi layer 코팅들이 개발되어 산업현장에 빠르게 확산되고 있다. PVD 코팅의 또 다른 주요 적용분야로 의료분야를 들 수 있는데, 이는 코팅의 대다수가 고경도의 생체친화적인 특성을 가진데 착안되었으며, 흔히 현대성 질환이라 일컫는 과민성 체질, 과체중 및 허약체질 환자의 증가와 각종 재해 및 사고의 증가 및 인간 수명 증가에 따른 인공적인 시술의 요구증가에 편승하여 이 분야의 시장 또한 가파르게 성장하고 있다. 또한 대량으로 양산 적용단계에 접어든 자동차 핵심부품들을 비롯해서 각종 산업용, 방산용 기계 부품에도 성능 향상, 내구성 향상, 환경친화성 등 다양한 목적으로 확대 적용되고 있는 사례들을 본 발표를 통해 간략하게나마 소개하고자 한다.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2006.05a
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• pp.109-112
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• 2006

A fluorine-doped diamond-like carbon (F-DLC) stamp which has high contact angle, high UV-transmittance and sufficient hardness, was fabricated using the following direct etching method: F-DLC is deposited on a quartz substrate using DC and RF magnetron sputtering, PMMA is spin coated and patterned using e-beam lithography and finally, $O_2$ plasma etching is performed to transfer the line patterns having 100 nm line width, 100 nm line space and 70 nm line depth on F-DLC. The optimum fluorine concentration was determined after performing several pre-experiments. The stamp was applied successfully to UV-NIL without being coated with an anti-adhesion layer.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.293-293
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• 2010

Carbon nanotubes (CNTs) have attracted considerable attention as possible routes to device miniaturization due to their excellent mechanical, thermal, and electronic properties. These properties show great potential for devices such as field emission displays, CNT based transistors, and bio-sensors. The metals such as nickel, cobalt, gold, iron, platinum, and palladium are used as the catalysts for the CNT growth. In this study, diamond-like carbon (DLC) was used for CNT growth as a nonmetallic catalyst layer. DLC films were deposited by a radio frequency (RF) plasma-enhanced chemical vapor deposition (RF-PECVD) method with a mixture of methane and hydrogen gases. CNTs were synthesized by a hot filament plasma-enhanced chemical vapor deposition (HF-PECVD) method with ammonia (NH3) as a pretreatment gas and acetylene (C2H2) as a carbon source gas. The grown CNTs and the pretreated DLC filmswere observed using field emission scanning electron microscopy (FE-SEM) measurement, and the structure of the grown CNTs was analyzed by high resolution transmission scanning electron microscopy (HR-TEM). Also, using energy dispersive spectroscopy (EDS) measurement, we confirmed that only the carbon component remained on the substrate.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2006.05a
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• pp.145-146
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• 2006

A fluorine-doped diamond-like carbon (F-DLC) stamp which has high contact angle, high UV-transmittance and sufficient hardness, was fabricated using the following direct etching method: F-DLC is deposited on a quartz substrate using DC and RF magnetron sputtering, PMMA is spin coated and patterned using e-beam lithography and finally, O2 plasma etching is performed to transfer the line patterns having 100 nm line width, 100 nm line space and 70 nm line depth on F-DLC. The optimum fluorine concentration was determined after performing several pre-experiments. The stamp was applied successfully to UV-NIL without being coated with an anti-adhesion layer.

• Transactions of the Korean Society of Automotive Engineers
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• v.23 no.6
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• pp.656-662
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• 2015

In the present study, multi-layered Si DLC (Silicon Diamond-Like Carbon) coatings with HMDSO (Hexamethyldisiloxane) buffer layers are applied on SKD 11 substrates by PECVD (Plasma Enhanced Chemical Vapor Deposition) with different HMDSO gas flow rates, while the gas flow rate of $C_2H_2$ is fixed to enhance the electric resistivity of forming dies for electrically assisted forming. The HMDSO buffer layer is introduced to increase adhesion between the base metal and Si-DLC layers. The result of evaluation of electric resistivity and adhesion strength shows that the properties are affected by the flow rate of HMDSO, while the flow rate of 80 sccm results in the coating with the highest electric resistivity and adhesion strength among the selected flow rates.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.183-183
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• 2012

In the era of 45 nm or beyond technology, conventional etch mask using photoresist showed its limitation of etch mask pattern collapse as well as pattern erosion, thus hard mask in etching became necessary for precise control of etch pattern geometry. Currently available hard mask materials are amorphous carbon and polymetric materials spin-on containing carbon or silicon. Amorphous carbon layer (ACL) deposited by PECVD for etch hard mask has appeared in manufacturing, but spin-on carbon (SOC) was also suggested to alleviate concerns of particle, throughput, and cost of ownership (COO) [1]. SOC provides some benefits of reduced process steps, but it also faced with wiggling on a sidewall profile. Diamond like carbon (DLC) was also evaluated for substituting ACL, but etching selectivity of ACL was better than DLC although DLC has superior optical property [2]. Developing a novel material for pattern hard mask is very important in material research, but it is also worthwhile eliminating a potential issue to continuously develop currently existing technology. In this paper, we investigated in-situ dry-cleaning (ISD) monitoring of ACL coated process chamber. End time detection of chamber cleaning not only provides a confidence that the process chamber is being cleaned, but also contributes to minimize wait time waste (WOW). Employing Challenger 300ST, a 300mm ACL PECVD manufactured by TES, a series of experimental chamber cleaning runs was performed after several deposition processes in the deposited film thickness of $2000{\AA}$ and $5000{\AA}$. Ar Actinometry and principle component analysis (PCA) were applied to derive integrated and intuitive trace signal, and the result showed that previously operated cleaning run time can be reduced by more than 20% by employing real-time monitoring in ISD process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.429-429
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• 2007

For various applications of liquid crystal displays (LCDs), the uniform alignment of liquid crystal (LC) molecules on treated surfaces is significantly important. Generally, a rubbing method has been widely used to align the LC molecules on polyimide (PI) surfaces. Rubbed PI surfaces have suitable characteristics, such as uniform alignment. However, the rubbing method has some drawbacks, such as the generation of electrostatic charges and the creation of contaminating particles. Thus, we strongly recommend a non contact alignment technique for future generations of large high-resolution LCDs. Most recently, the LC aligning capabilities achieved by ultraviolet and ion-beam exposures which are non contact methods, on diamond-like carbon (DLC) inorganic thin film layers have been successfully studied because DLC thin films have a high mechanical hardness, a high electrical resistivity, optical transparency, and chemical inertness. In addition, nitrogen-doped DLC (NDLC) thin films exhibit properties similar to those of the DLC thin films and a higher thermal stability than the DLC thin films because C:N bonding in the NDLC thin filmsis stronger against thermal stress than C:H bonding in the DLC thin films. Our research group has already studied the NDLC thin films by an ion-beam alignment method. The $SiN_x$ thin films deposited by plasma-enhanced chemical vapor deposition are widely used as an insulation layer for a thin film transistor, which has characteristics similar to those of DLC inorganic thin films. Therefore, in this paper, we report on LC alignment effects and pretilt angle generation on a $SiN_x$, thin film treated by ion-beam irradiation for various N ratios

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.223-223
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• 2012

Surface engineering plays a significant role in fabricating highly functionalized materials applicable to industrial and biomedical fields. Surface wrinkles and folds formed by ion beam or plasma treatment are buckling-induced patterns and controlled formation of those patterns has recently gained considerable attention as a way of creating well-defined surface topographies for a wide range of applications. Surface wrinkles and folds can be observed when a stiff thin layer attached to a compliant substrate undergoes compression and plasma treatment is one of the techniques that can form stiff thin layers on compliant polymeric substrates, such as poly (dimethylsiloxane) (PDMS). Here, we report two effective methods using plasma modification techniques for controlling the formation of surface wrinkles and folds on flat or patterned PDMS substrates. First, we show a method of creating wrinkled diamond-like carbon (DLC) film on grooved PDMS substrates. Grooved PDMS substrates fabricated by a molding method using a grooved master prepared by photolithography and a dry etching process were treated with argon plasma and subsequently coated with DLC film, which resulted in the formation of wrinkled DLC film aligning perpendicular to the steps of the pre-patterned ridges. The wavelength and the amplitude of the wrinkled DLC film exhibited variation in the submicron- to micron-scale range according to the duration of argon plasma pre-treatment. Second, we present a method for controlled formation of folds on flat PDMS substrates treated with oxygen plasma under large compressive strains. Flat PDMS substrates were strained uniaxially and then treated with oxygen plasma, resulting in the formation of surface wrinkles at smaller strain levels, which evolved into surface folds at larger strain levels. Our results demonstrate that we can control the formation and evolution of surface folds simply by controlling the pre-strain applied to the substrates and/or the duration of oxygen plasma treatment.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.105-105
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• 2012

We have developed a photoemission-assisted plasma-enhanced chemical vapor deposition (PAPE-CVD) [1,2], in which photoelectrons emitting from the substrate surface irradiated with UV light ($h{\nu}$=7.2 eV) from a Xe excimer lamp are utilized as a trigger for generating DC discharge plasma as depicted in Fig. 1. As a result, photoemission-assisted plasma can appear just above the substrate surface with a limited interval between the substrate and the electrode (~10 mm), enabling us to suppress effectively the unintended deposition of soot on the chamber walls, to increase the deposition rate, and to decrease drastically the electric power consumption. In case of the deposition of DLC gate insulator films for the top-gate graphene channel FET, plasma discharge power is reduced down to as low as 0.01W, giving rise to decrease significantly the plasma-induced damage on the graphene channel [3]. In addition, DLC thickness can be precisely controlled in an atomic scale and dielectric constant is also changed from low ${\kappa}$ for the passivation layer to high ${\kappa}$ for the gate insulator. On the other hand, negative electron affinity (NEA) of a hydrogen-terminated diamond surface is attractive and of practical importance for PAPECVD, because the diamond surface under PAPE-CVD with H2-diluted (about 1%) CH4 gas is exposed to a lot of hydrogen radicals and therefore can perform as a high-efficiency electron emitter due to NEA. In fact, we observed a large change of discharge current between with and without hydrogen termination. It is noted that photoelectrons are emitted from the SiO2 (350 nm)/Si interface with 7.2-eV UV light, making it possible to grow few-layer graphene on the thick SiO2 surface with no transition layer of amorphous carbon by means of PAPE-CVD without any metal catalyst.

• Journal of the Korean institute of surface engineering
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• v.29 no.5
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• pp.512-518
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• 1996

Amorphous carbon nitride (a-C:N) multilayerfilms are formed by using altermating conditions during film deposition in are ion plating process. Because hard a-C:N films prepared with suitable megative bias voltages have large compressive stress, it is difficult to increase film thickness more than 200nm. Preparing multilayer films composed of hard layers and soft layers, we can grow thick multilayer films on Si and SKH steel substrate. The total thickness of multilayer films is more than 1$\mu\textrm{m}$. The multilayer films are several times thicker than the single layer films and almost equal in hardness and internal stress to the single layer ones. X-ray photoelectron spectroscopy(XPS) and Raman spectroscopy reveal that multilayer films equal to single layer films in structure, which is similar to the structure of DLC films.