• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.102-102
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• 2008

Sapphire (${\alpha}-Al_2O_3$) has been used as the substrate of opto-electronic device because of characteristics of thermal stability, comparatively low cost, large diameter, optical transparency and chemical compatibility. However, there is difficulty in the etching and patterning due to the physical stability of sapphire and the selectivity with sapphire and mask materials [1,2]. Therefore, sapphire has been studied on the various fields and need to be studied, continuously. In this study, the etching properties of sapphire substrate were investigated with various $CH_4$/Ar gas combination, radio frequency (RF) power, DC-bias voltage and process pressure. The characteristics of the plasma were estimated for mechanism using optical emission spectroscopy (OES). The chemical compounds on the surface of sapphire substrate were investigated using energy dispersive X-ray (EDX). The chemical reaction on the surface of the etched sapphire substrate was observed by X-ray photoelectron spectroscopy (XPS). Scanning electron microscopy (SEM) was used to investigate the vertical and slope profiles.

• Journal of Institute of Control, Robotics and Systems
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• v.15 no.7
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• pp.675-682
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• 2009

Instead of direct driving like BLDC, the induction principle is adopted as a driving one for planar stage. The stage composed of four linear induction motors put in square type is activated by two-axial forces; low-frequency attractive force and thrust force of the linear induction motors. Here, the modified vector control whose new inputs are q-axis current and dc current biased to three phase current instead of d-axis current or flux current is applied extensively to overall motion of the stage. For the developed system, the precision step test and the constant velocity test are tried to guarantee its feasibility for TFT-LCD pattern inspection. However, to exclude a discontinuity due to phase shift and minimize a force ripple synchronized with the command frequency, the initial system is revised to the antagonistic structure over the full degree of freedom. Concretely describing, the porous air bearings guide an air-gapping of the stage up and down and a pair of liner induction motors instead of single motor are activated in the opposite direction each other. The performances of the above systems are compared from trapezoid tracking test and sinusoidal test.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.9
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• pp.714-723
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• 2003

An effective technique to increase the signal swing and reduce noise is to use fully-differential -circuits. However, design of a common-mode feedback (CMFB) circuit that stabilizes the common-mode output level is essential. In this paper, a general description is given to fully-differential amplifiers with their CMFB loops, then a new error amplifier that is just composed of transistors and stabilizes the DC output level is proposed. We designed a simple and efficient bias circuit that allows the stability and maximum input swing. Simulation result shows the enhanced phase margin and increased differential-mode input swing with a proposed error amplifier.

• Bulletin of the Korean Chemical Society
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• v.23 no.5
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• pp.741-744
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• 2002

Single phase of multicomponent oxide ZrTiO4 film could be prepared through surface sol-gel route simply by coating the mixture of 100 mM zirconium butoxide and titanium butoxide on $Pt/Ti/SiO_2Si(100)$ substrate, following pyro lysis at $450^{\circ}C$, and annealing it at 770 $^{\circ}C.$ The dielectric constant of the film was reduced as the film thickness decreased due to of the interfacial effects caused by layer/electrode and a few voids inside the multilayer. However, the dielectric property was independent of applied dc bias sweeps voltage (-2 to +2 V).The dielectric constant of bulk film, 31.9, estimated using series-connected capacitor model was independent of film thickness and frequency in the measurement range, but theoretical interfacial thickness, ti, was dependent on the frequency. It reached a saturated ti value, $6.9{\AA}$, at high frequency by extraction of some capacitance component formed at low frequency range. The dielectric constant of bulk ZrTiO4 pellet-shaped material was 33.7 and very stable with frequency promising as good applicable devices.

• Journal of Sensor Science and Technology
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• v.23 no.1
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• pp.42-45
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• 2014

Recently, tremendous application utilizing electrospun nanofibers have been actively reported due to its several advantages, such as high surface to volume ratio, simple fabrication and high-throughput manufacturing. In this paper, we developed highly sensitive and consistent nanofiber humidity sensor by electrospinning. The humidity sensor was fabricated by rapid electrospinning (~2 sec) $TiO_2$/PVP/LiCl mixed solution on the micro-interdigitated electrode. In order to evaluate the humidity sensing performances, we measured current response using DC bias voltage under various relative humidity levels. The results show fast response / recovery time and marginal hysteresis as well as long-term stability. In addition, with the aid of micro-interdigitated electrode, we can reduce a total resistance of the sensor and increase the total reaction area of nanofibers across the electrodes resulting in high sensitivity and enhanced current level. Therefore, we expect that the electrospun nanofiber array for humidity sensor can be feasible and promising for diverse humidity sensing application.

• Journal of Sensor Science and Technology
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• v.27 no.4
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• pp.269-274
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• 2018

High-sensitivity signal-to-noise ratio (SNR) microphones are essentially required for a broad range of automatic speech recognition applications. Piezoelectric microphones have several advantages compared to conventional capacitor microphones including high stiffness and high SNR. In this study, we designed a new piezoelectric membrane structure by using the finite elements method (FEM) and an optimization technique to improve the sensitivity of the transducer, which has a high-quality AlN piezoelectric thin film. The simulation demonstrated that the sensitivity critically depends on the inner radius of the top electrode, the outer radius of the membrane, and the thickness of the piezoelectric film in the microphone. The optimized piezoelectric transducer structure showed a much higher sensitivity than that of the conventional piezoelectric transducer structure. This study provides a visible path to realize micro-scale high-sensitivity piezoelectric microphones that have a simple manufacturing process, wide range of frequency and low DC bias voltage.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2003.11a
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• pp.155-159
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• 2003

This paper presents fully integrated 5 GHz band low phase noise LC tank VCO. The implemented VCO is tuned by integrated PN diode and tuning rage is $5.01{\sim}5.30$ GHz under $0{\sim}3 V$ control voltage. For good phase noise performance, LC filtering technique, common in Si CMOS process, is used, and to prevent degradation of phase noise performance by collector shot-noise and to reduce power dissipation the HBT is biased at low collector current density bias point. The measured phase noise is -87.8 dBc/Hz at 100 kHz offset frequency and -111.4 dBc/Hz at 1 MHz offset frequency which is good performance. Moreover phase noise is improved by roughly 5 dEc by LC filter. It is the first experimental result in InGaP/GaAs HBT process. The figure of merit of the fabricated VCO with LC filter is -172.1 dBc/Hz. It is the best result among 5 GHz InGaP HBT VCOs. Moreover this work shows lower DC power consumption, higher output power and more fixed output power compared with previous 4, 5 GHz band InGaP HBT VCOs.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2003.11a
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• pp.219-223
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• 2003

This paper describes an estimation of DOA(Direction Of Arrival) measurement system using DBF receiver with linear array antenna. This DBF receiver is composed of resistive FET mixer using low IF mettled. A radio frequency(RF), a local oscillator(LO) and ail intermediate frequency(IF) considered in this research are 2.09 GHz, 2.08 GHz and 10 MHz, respectively. This receiver is composed of a band-pass filter, a low-pass filter, a DC bias circuit. DOA measurement system is consist of linear array antenna, DBF receiver, AD control box and computer in the anechoic chamber. Receiving antenna is 4-array monopole antenna and DBF receiver is 4-Ch resistive FET mixer without amplifier. DOA algorithm is implemented using MUSIC algorithm with high resolution. We show that the results of DOA is $-30^{\circ},\;0^{\circ}$ and $60^{\circ}$, respectively. And we know that DOA estimation error occur by antenna radiation pattern and fabrication error of antenna array.

• Journal of Hydrogen and New Energy
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• v.1 no.1
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• pp.48-54
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• 1989

Semiconductive property of the passivating $TiO_2$ film was investigated by measuring the impedance of passivated titanium electrode in a 0.1 N NaOH solution. The passive film was prepared galvanostatically with $10mA/cm^2$ at formation potential of 50 V in a 1 N $H_2SO_4$ solution. The impedance measurement was conducted by superimposing an ac voltage of 5 m V amplitude with the frequency ranging from 5 to 10000 Hz on a dc bias (applied potential). The donor distribution in the film was depicted from the analysis of the non-linear slope of Mott-Schottky plot. The region with nearly constant concentration of donors near the electrolyte/film interface amounts at about 60 percent of the total film thickness and donor concentration increases largely with distance from the surface in an inner region near the film/metal interface. In a region of the film/metal interface the donor concentration showed a frequency dependence greater than in a region of the electrolyte/film interface. The result of donor concentration against frequency suggests a transition from crystalline to amorphous state with distance from the electrolyte/film interface in the passivating $TiO_2$ films. This is also confirmed by the ac conductivity measurement.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04b
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• pp.13-17
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• 2004

The PZT thin films are well-known material that has been widely studied for ferroelectric random access memory (FRAM). We etched the PZT thin films by $CF_4/(Cl_2+Ar)$ plasma and investigated improvement in etching damage by $O_2$ annealing. PZT thin films were etched for 1 min in an ICP using a gas mixture of $Cl_2$(80%)/Ar (20%) with 30% $CF_4$ addition. The etching conditions were fixed at a substrate temperature of $30^{\circ}C$, an rf power of 700 W, a dc-bias voltage of -200 V and a chamber pressure of 2 Pa. To improve the ferroelectric properties of PZT thin films after etching, the samples were annealed for 10 min at various temperatures in $O_2$ atmosphere. After $O_2$ annealing, the remanent polarization, fatigue, and the leakage current were gradually recovered to the characteristics of the as-deposited film, according as the temperature increased.