• 한국진공학회지
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• 제9권4호
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• pp.382-388
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• 2000

ECR-PECVD 방법을 이용하여 ECR power, $CH_4/H2$ 가스 혼합비와 유량, 증착시간, negative DC self bias 전압 등을 변화 시켜가면서 수소가 함유된 비정질 탄소 박막을 제조하고, 증착조건에 따른 박막의 결합구조 변화를 FTIR로 분석하였다. a-C:H 박막에 대한 FTIR 스팩트럼의 흡수 peak들은 2800~3000 $\textrm{cm}^{-1}$ 영역에서 관측되었으며, 대부분 $sp^3$ 결합을 하고있고 일부 $sp^2$ 결합구조가 존재함을 알 수 있었다. $CH_4/H_2$ 가스 혼합비와 유량의 미소 변화는 a-C:H 박막의 탄소와 수소의 결합구조에 큰 영향을 미치지 않았으며, 증착 시간이 증가할수록 탄소와 수소 원자들의 결합구조가 $CH_3$ 구조로부터 $CH_2$ 나 CH 구조로 변하고 있음을 확인하였다. 또한, bias 전압을 증가시킬수록 플라즈마에 의한 이온충돌 현상이 두드러져 탄소와 결합하고 있던 수소원자들이 떨어져 나가는 탈수소화 현상도 확인할 수 있었으며, 증착조건에 따른 a-C:H 박막의 결합구조 분석을 토대로 산업에 응용할 수 있는 높은 경도와 밀착성을 갖는 박막을 ECR-PECVD 방법으로 제조할 수 있음을 확인하였다.

• Journal of Electrical Engineering and Technology
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• 제13권5호
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• pp.1886-1900
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• 2018

This paper proposes a confronting feedback control structure and controllers for positive output elementary super lift Luo converters (POESLLCs) working in discontinuous conduction mode (DCM). The POESLLC offers the merits like high voltage transfer gain, good efficiency, and minimized coil current and capacitor voltage ripples. The POESLLC working in DCM holds the value of not having right half pole zero (RHPZ) in their control to output transfer function unlike continuous conduction mode (CCM). Also the DCM bestows superlative dynamic response, eliminates the reverse recovery troubles of diode and retains the stability. The proposed control structure involves two controllers respectively to control the voltage (outer) loop and the current (inner) loop to confront the time-varying ON/OFF characteristics of variable structured systems (VSSs) like POESLLC. This study involves two different combination of feedback controllers viz. the proportional integral controller (PIC) plus sliding mode controller (SMC) and the fuzzy logic controller (FLC) plus SMC. The state space averaging modeling of POESLLC in DCM is reviewed first, then design of PIC, FLC and SMC are detailed. The performance of developed controller combinations is studied at different working states of the POESLLC system by MATLAB-Simulink implementation. Further the experimental corroboration is done through implementation of the developed controllers in PIC 16F877A processor. The prototype uses IRF250 MOSFET, IR2110 driver and UF5408 diodes. The results reassured the proficiency of designed FLC plus SMC combination over its counterpart PIC plus SMC.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 추계학술대회 논문집 전기물성,응용부문
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• pp.227-230
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• 2001

This paper divides the factors of an accident into two parts, that are electrical deterioration and thermal deterioration, to analyze a characteristic of the factor of an accident which can break out in the capacitor of metal vaporized polypropylene film. For the purpose of creating capacitor which is caused by electric deterioration, we applied DC overvoltage, induced self-healing and breakdown from element. We applied gradual heat to get an element which is cause by thermal deterioration. The chemical structure of the shape and surface is analyzed by thermogravimetric analyzer (TGA), Scanning Electron Microscope (SEM) and Fourier Transform Infrared Spectrometer(FT-IR). As a result, the peak of methylene group came out, in case of electrical deterioration, as observing the self-healing point. However, the peak is disappeared in the heat treated element by 500[$^{\circ}C$], and the peak of carbonyl group which has C=O came out in case of thermal deterioration.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.300.2-300.2
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• 2016

Increasing of the demand for energy savings for buildings, thermal barrier films have more attracted. In particular, as heat loss through the windows have been pointed out to major problems in the construction and automobile industries, the research is consistently conducted for improving the thermal blocking performance for windows. The main theory of the technology is reflect the infrared rays to help the cut off the inflow of the solar energy in summer and outflow of the heat from indoors in winter to save the energy on cooling and heating. Furthermore, this is well known for prevent glare, reduces fading caused by harmful ultraviolet radiation and easy to apply on constructed buildings if it made as a film. In addition to these advantages, apply the transparent electrode to eliminate condensation by heating. Generally ITO is used as a transparent electrode, but is has a low stability in environmental factors. In this study, ITO and its alternative, ATO, is deposited by sputtering system and then the characteristic is evaluated each material based thermal barrier thin film. The optical property was measured on wide range of wavelength (200 nm 2500 nm) to know the transparency in visible wavelength and reflectivity in IR wavelength range. The electrical property was judged by sheet resistivity. Finally the changes of the temperature and current of the deposited film was observed while applying a DC power.

• 한국전기전자재료학회논문지
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• 제19권7호
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• pp.687-694
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• 2006

We report on the fabrication of organic-based flexible displays using an amorphous IZO anode grown at room temperature. The IZO anode films were grown by a conventional DC reactive sputtering on the polycarbonate (PC) substrate at room temperature using a synthesized IZO target in a $Ar/O_2$ ambient. Both x-ray diffraction (XRD) and high resolution electron microscope (HREM) examination results show that the IZO anode film grown at room temperature Is complete amorphous structure due to low substrate temperature. A sheet resistance of $35.6\Omega/\Box$, average transmittance above 90 % in visible range, and root mean spare roughness of $6\sim10.5\AA$ were obtained even in the IZO anode film grown on PC substrate at room temperature. It is shown that the $Ir(ppy)_3$ doped flexible organic light emitting diode (OLED) fabricated on the IZO anode exhibit comparable current-voltage-luminance characteristics as well as external quantum efficiency and power efficiency to OLED fabricated on conventional ITO/Glass substrate. These findings indicate that the IZO anode film grown on PC substrate is a promising anode materials for the fabrication of organic based flexible displays.

• 한국안전학회지
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• 제14권2호
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• pp.83-89
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• 1999

The electrical properties due to mixture ratio of linear low density polyethylene(LLDPE) and ethylene vinyl acetate(EVA) films are studied. An experimental specimen is selected as LLDPE/EVA of thickness 200${\mu}{\textrm}{m}$ produced by mixture ratio of 50 : 50, 60 : 40, 70 : 30 and 80 : 2 wt%. In temperature range from $25^{\circ}C$ to 12$0^{\circ}C$, the measurement of volume resistivity using a highmegohm meter is performed within 10 minutes since each voltage of DC 100 V, 250 V, 500 V and 1000 V is applied, according to the step voltage method. From FT-IR spectrum for an analysis of physical properties, it can be confirmed that LLDPE blended with EVA shows an absence of carbonyl groups(1735 $cm^{-1}$, C=0) and ether groups(1242 $cm^{-1}$, C-O). The peak of LLDPE and EVA made of mixture ratio of 70 : 30 at 2$\theta$ =21.4$^{\circ}$ in the results of XRD is higher than the others. In the experiment for volume resistivity characteristics in order to investigate the electrical properties of specimen, it is confirmed that volume resistivity is decreased with the increase of the molecular motion and temperature.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.455-458
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• 2002

In this paper, the physical and volume resistivity properties of cross-linked polyethylene (XLPE) for ultra-high voltage investigated due to temperature dependence, and the measurement of volume resistivity used to highmegohm meter is measured from 1 to 30 minutes when the each applied voltage, for example, DC 100[V], 250[V], 500[V] and 1000[V] is applied, according to the step voltage application method. From FT-IR spectrum as an analysis of physical properties, a strong absorption in wavenumbers 700 to 730[$cm^{-1}$ /], 1456[$cm^{-1}$ /] and 2700 to 3000 [$cm^{-1}$ /] observed by the methyl groups(CH$_2$). From the analysis of DSC, the crystalline melting points of the specimen observed in the temperature 60[$^{\circ}C$] and 106.58[$^{\circ}C$].

• 전자공학회논문지A
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• 제32A권12호
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• pp.130-135
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• 1995

GaAs power MESFET's with 0.5 .mu.m gate length using a conventional UV lithography and angle evaporations are fabricated and then DC and RF characteristics are measured and carefully analyzed. The 0.5$\mu$m GaAs power MESFET's are fabricated on epi-wafers which have an undoped GaAs layer inbetween n+ and n GaAs layers grown by MBE, and by the processes such as an image reversal(IR), air-bridge, and our developed 0.5 .mu.m gate fabrication techniques. The total gate widths of the fabricated 0.5$\mu$m GaAs power MESFETs are 0.6-3.0 mm, the current saturation of them 80-400 mA, the maximum linear and RF output power of them 60-265 mW. The current gain cut-off frequencies for the 0.5$\mu$m GaAs power MESFETs varies 13-16 GHz. For the test frequency of 10 GHz the maximum unilateral transducer power gains and the power added efficiencies of the GaAs power devices are 7.0-2.5 dB and 35.68-30.76 %, respectively.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.69-69
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• 2010

현대 건축물에서 건물에너지의 손실은 대부분은 창호를 통하여 유출되어지고 있으며 에너지 절감을 위해서는 창호의 단열성을 향상시켜야한다. 저방사(Low Emissivity) 코팅유리는 건축물의 냉난방비용을 절약할 수 있는 대표적인 건축재료로써 외부에서 유입되는 태양광의 가시광선 영역은 높은 투과율을 가지면서 적외선 영역과 겨울철 실내 난방열을 반사하는 특징을 지니는 박막코팅기술이다. 이 코팅유리는 일반적으로 유전체/금속/유전체 다층박막 구조로 되어있으며, 유전체층은 내구성 증진과 금속층의 반사를 낮추어 투과율이 향상된다. 금속층은 적외선영역의 복사에너지를 반사하는 역할을 하며 전도성이 우수한 Ag 또는 Au, Pt 등을 이용하고 있다. Ag의 경우 산화물기판 위에 증착하였을 경우 island 성장을 하고 이들의 합체는 전기적, 광학적 특성에 큰 영향을 미치게 된다. 본 연구에서는 DC-sputtering법으로 제조된 Ag/glass, Ag/Ta/glass 박막을 제조하고 Ta seeding이 Ag의 전기적, 광학적 성질에 미치는 영향을 관찰하였다. 박막의 표면 미세구조는 FE-SEM(Field Emission Scanning Electron Microscope)과 AFM(Atomic Force Microscope)으로, 표면저항은 4 point probe로 분석하였다. 광투과율은 UV-Vis spectroscopy와 FT-IR로 측정하였으며 측정파장범위는 각각 200~1100nm와 1400~2400nm 이다.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2009년도 추계학술대회 논문집
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• pp.390-390
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• 2009

마그네트론 스퍼터링법을 이용하여 n-i-p 구조의 플렉서블 실리콘 박막태양전지용 ZnO/Ag 후면전극을 stainless steel 기판위에 제조하고 증착온도와 Ag 박막의 두께 변화에 따른 광학적 특성변화를 조사하였다. ZnO/Ag 구조의 후면전극은 RF와 DC 마그네트론 스퍼터링으로 Ag 금속 및 ZnO:Al($Al_2O_3$ 2.5%) 세라믹 타겟을 이용하여 각각 제조하였으며 증착온도는 상온 ${\sim}500^{\circ}C$로, Ag 박막두께는 100 ~ 500 nm로 변화시켰다. 증착조건 변화에 따라 제조된 후면전극의 표면거칠기 및 형상변화를 Atomic Force Mircroscope (AFM)와 Scanning electron miroscopy (SEM)으로 분석하였으며 이에 따른 반사도 변화를 UV-visible-nIR spectrometry 측정을 통하여 조사하였다. 증착온도가 증가함에 따라 Ag 박막의 표면 거칠기는 점차로 증가하였으며 증착된 후면전극의 반사도도 함께 증가함을 알 수 있었다. Ag 박막의 두께 변화에 따른 반사도 변화와 n-i-p 구조의 플렉서블 실리콘 박막태양전지에 미치는 영향을 조사하였다.