• Bulletin of the Korean Chemical Society
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• v.8 no.3
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• pp.185-189
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• 1987

Reactions of $Ir(ClO)_4(CO)(PPh_3)_2$ with dicyano olefins, cis-NCCH = CH$CH_2$$CH_2$CN (cDC1B), trans-NCCH = CH$CH_2$$CH_2$CN (tDC1B), trans-NC$CH_2$CH = CH$CH_2$CN (tDC2B), and NC$CH_2$$CH_2$$CH_2$$CH_2$CN (DCB) produce binuclear dicationic iridium (I) complexes, $[(CO)(PPh_3)_2Ir-NC-A-CN-Ir(PPh_3)_2(CO)](ClO_4)_2$ (NC-A-CN = cDC1B (1a), tDC1B (1b), tDC2B (1c), DCB (1d)). Complexes 1a-1d react with hydrogen to give binuclear dicationic tetrahydrido iridium (Ⅲ ) complexes, $[(CO)(PPh_3)_2(H)_2Ir-NC-A-CN-Ir(H)_2(PPh_3)_2(CO)](ClO_4)_2$ (NC-A-CN = cDC1B (2a), tDC1B (2b), tDC2B (2c), DCB (2d)). Complexes 2a and 2b catalyze the hydrogenation of cDC1B and tDC1B, respectively to give DCB, while the complex 2c is catalytically active for the isomerization of tDC2B to give cDC1B and tDC1B and the hydrogenation of tDC2B to give DCB at $100^{\circ}C$.

• Journal of the Korean institute of surface engineering
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• v.41 no.3
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• pp.88-93
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• 2008

Ir-Re thin films with Ti interlayer were deposited onto the tungsten carbide substrate by ion beam assisted DC magnetron sputtering. The Ir-Re films were prepared with targets of having two atomic percent of 7:3 and 5:5. The microstructure and surface analysis of the specimen were conducted by using SEM, XRD and AFM. Mechanical properties such as hardness and adhesion strength of Ir-Re thin film also were examined. The interlayer of pure titanium was formed with 100 nm thickness. The film growth of Ir-30at.%Re was faster than that of Ir-50at.%Re in the same deposition conditions. Ir-Re thin films consisted of dense and columnar structure irrespective of the different target compositions. The values of hardness and adhesion strength of Ir-30at.%Re thin film coated on WC substrate were higher than those of Ir-50at.%Re thin film.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.12 no.10
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• pp.1835-1839
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• 2008

Power management is a very important issue in portable electronic applications. Portable electronic devices require very efficient power management like LDO to increase the battery life. As the voltage variation of battery power is large in the application of cell phone, camera, laptop, automotive, industry application and so on, battery power is not directly used and LDO is used to supply the power of internal circuit. Besides, LDO can supply DC voltage that is lower than bauer voltage and constant DC voltage that is not related to largely fluctuated battery power. In the study, the power-save mode current and IR-drop characteristics are analyzed from a LDO with on-chip fabricated in 0.18-um CMOS technology.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.233-233
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• 2010

Magnetic random access memory (MRAM), based on magnetic tunnel junction (MTJ) and CMOS, is a prominent candidate among prospective semiconductor memories because it can provide nonvolatility, fast access time, unlimited read/write endurance, low operating voltage and high storage density. The etching of MTJ stack with good properties is one of a key process for the realization of high density MRAM. In order to achieve high quality MTJ stack, the use of CoFeB and IrMn magnetic films as free layers was proposed. In this study, inductively coupled plasma reactive ion etching of CoFeB and IrMn thin films masked with Ti hard mask was investigated in a $Cl_2$/Ar gas mix. The etch rate of CoFeB and IrMn films were examined on varying $Cl_2$ gas concentration. As the $Cl_2$ gas increased, the etch rate monotonously decreased. The effective of etch parameters including coil rf power, dc-bais voltage, and gas pressure on the etch profile of CoFeB and IrMn thin film was explored, At high coil rf power, high dc-bais voltage, low gas pressure, the etching of CoFeB and IrMn displayed better etch profiles. Finally, the clean and vertical etch sidewall of CoFeB and IrMn free layers can be achieved by means of thin Ti hard mask in a $Cl_2$/Ar plasma at the optimized condition.

• Journal of the Korean Magnetics Society
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• v.12 no.2
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• pp.64-67
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• 2002

IrMn pinned spin valve (SV) films with stacks of Ta/NiFe/IrMn/CoFe/Cu/CoFe/NiFe/Ta were prepared by dc sputtering onto thermally oxidized Si (111) substrates at room temperature under a magnetic field of about 100 Oe. The annealing cycle number and temperature dependence of exchange coupling field (H$_{ex}$), magnetoresistance (MR) ratio, and coercivity (H$_{c}$) were investigated. By optimizing the process of deposition and post thermal annealing condition, we obtained the IrMn based SV films with MR ratio of 3.6%, H$_{ex}$ of 1180 Oe for the pinned layer. The H$_{ex}$ is stabilized after the second annealing cycle and it is thought that this SV reveals high thermal stability. The H$_{ex}$ maintained its strength of 600 Oe in operation up to 24$0^{\circ}C$ and decreased monotonically to zero at 27$0^{\circ}C$.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.213-213
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• 2011

DC arc plasmatron is powerful plasma source to apply etching and texturing processing. Even though DC arc plasmatron has many advantages, it is difficult to apply an industry due to the small applied area. To increase an effective processing area, we suggest a DC-RF hybrid plasma system. The DC-RF hybrid plasma system was designed and made. This system consists of a DC arc plasmatron, RF parts, reaction chamber, power feeder, gas control system and vacuum system. To investigate a DC-RF hybrid plasma, we used a Langmuir probe, OES (Optical emission spectroscopy), infrared (IR) light camera. For RF matching, PSIM software was used to simulate a current of an impedance coil. The results of Langmuir probe measurements, we obtain a homogeneous plasma density and electron temperature those are about $1{\times}1010$ #/cm3 and 1~4 eV. The DC-RF hybrid plasma source is applied for plasma etching experimental, and we obtain an etching rate of 10 ${\mu}m$/min. through a 90 mm of reaction chamber diameter.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.947-950
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• 2003

본 논문에서는 고속 적외선 무선 데이터통신(IrDA) 에 사용되는 트랜스임피던스 증폭기(Transimpedance Amplifier)를 설계하였다. 트랜스임피던스 증폭기는 잡음을 최소화하기 위해 PMOS 차동 구조로 설계하였으며 입력과 출력의 피드백을 통해 주위의 빛에 의해 발생되는 photocurrent 에 의한 DC 옵셋을 제거하였다 또한 공통 게이트(CG)와 Regulated Cascode Circuit (RGC)을 추가하여 대역폭(Bandwidth)을 향상시켰다. 설계한 회로는 0.25 um CMOS 공정을 이용하였으며 트랜스임피던스 이득은 200 MHz의 대역폭에서 10 KΩ (80 dBΩ )이다. 전체 전력 소비는 18 mW이다.

• Journal of Institute of Control, Robotics and Systems
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• v.14 no.8
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• pp.767-773
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• 2008

This paper presents a localization system based on the use of electric compass and tracking IR light source. Digital RGB(Red, Green, Blue)signal of digital CMOS Camera is sent to CPLD which converts the color image to binary image at 30 frames per second. CMOS camera has IR filter and UV filter in front of CMOS cell. The filters cut off above 720nm light source. Binary output data of CPLD is sent to DSP that rapidly tracks the IR light source by moving Camera tilt DC motor. At a robot toward north, electric compass signals and IR light source angles which are used for calculating the data of the location system. Because geomagnetic field is linear in local position, this location system is possible. Finally, it is shown that position error is within ${\pm}1.3cm$ in this system.

• Applied Chemistry for Engineering
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• v.16 no.2
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• pp.226-230
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• 2005

Chitosan derivatives, 6-amino-6-deoxychitosan (6A6DC) was successively prepared as a reactive carbohydrate for the stabilization of epidermal growth factor (EGF) by the reactions of chitosan with tosyl chloride, sodium azide, and lithium aluminum tetrahydride. The structure of 6A6DC was confirmed by EA, FT-IR, $^1H-NMR$ and $^{13}C\{^1H\}-NMR$. The degree of substitution (ds) of amino groups in 6A6DC was determined to be 0.7. 6A6DC did not show any cytotoxicity on the normal human dermal fibroblast (NHDF) proliferation at least in the range tested (0.3 g/mL 600 g/mL) and was considered as a suitable material for the stabilization of EGF against proteolytic degradation due to its non-cytotoxicity and high reactivity.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.298-299
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• 2011

최근 입력소자로 활용되는 터치스크린은 키보드나 마우스와 같은 입력장치를 사용하지 않고, 스크린에 손가락, 펜 등을 접촉하여 입력하는 방식이다. 터치패널의 구현방식에 따라 저항막(Resistive) 방식, 정전용량(Capacitive) 방식, SAW (Surface Accoustic Wave; 초음파) 방식, IR (Infrared; 적외선) 방식등으로 구분된다. 특히 최근 관심을 받고 있는 IR 방식은 적외선이 사람의 눈에는 보이지 않으나, 직진성을 가지고 있어 장애물이 있으면 차단되는 특성을 이용한 방식이다. IR방식의 터치패널은 발광(Light emitting)소자와 수광(Light detecting)소자가 마주하도록 배치되어 터치에 의해 차단된 좌표를 인식하게 되며, ITO 필름 등이 필요 없어 Glass 1장으로도 구현이 가능하며 투과율이 우수하다. 이러한 IR 방식의 터치패널을 제작하기 위하여 사용된 IR 광검출기는 광학적 band-gap이 작은 박막물질을 필요로 한다. 본 연구에서는 IR 광검출을 위한 물질로 SiGe를 co-sputtering 기법을 이용하여 성장시켰다. 일반적으로 SiGe 박막을 성장시키기 위하여 저압화학기상증착법(low pressure chemical vapor deposition, LPCVD)이나 고진공 LPCVD를 사용하지만 본 연구에서는 CVD에 비하여 무독성이면서 환경친화적이고 초기투자비용이 낮은 증착장비인 sputtering을 이용하였다. 본 연구에서 성장된 SiGe 박막은 400$^{\circ}C$에서 rf plasma가 인가된 Ge과 dc plasma가 인가된 Si의 power를 조절하여 결정화도가 70% (Fig. 1)이고 결정성장방향이 (111)과 (220)방향으로 성장하는 SiGe 박막을 얻을 수 있었다. 본 논문에서는 co-sputtering 성장조건에 따라 성장된 SiGe의 박막 특성을 논의할 것이다.