• Publications of The Korean Astronomical Society
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• v.11 no.1
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• pp.109-123
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• 1996

We have developed a 5GHz continuum receiver system. The receiver is a direct type receiver. In order to reduce the noise due to the fluctuation of the gain in the amplifiers, the system employs the Dicke switching method. We made the 5GHz low-noise amplifier and the bandpass filter. The low-noise amplifier gives ${\sim}35dB$ gain and has ${\sim}210K$ noise temperature. The bandpass filter has a passband between 4.3 and 5.4GHz. We also made switch driver, video amplifiers, phase detector, and integrator. Using a 1.8 meter offset parabolic antenna, we measured the efficiency of the system. Since the antenna does not have a driver to track objects, observations were performed with the antenna fixed. The measured noise temperature of the system is ${\sim}650K$. From the observation of the blank sky, noise level was measured. It was found that the systematic noise(${\sim}0.5K$: peak to peak value) is much larger than the thermal noise. The systematic noise is possibly related to the stability of the DC power supplied to the receiver system. Besides the noise of the system, it was found that the airplanes are the very serious noise sources. We measured the radio flux of the Sun using the developed system. The observed radio flux of the Sun is ${\sim}10^6Jy$, which is close to the known value of the quiet Sun. The test observation of the Sun shows that the angular beam size of the antenna is ${\sim}2.2^{\circ}$.

• The Transactions of the Korean Institute of Power Electronics
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• v.2 no.1
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• pp.33-38
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• 1997

Generally, various semiconductor switching devices for power systems are used in battery chargers for electric vehicle. When these used, it takes the problems of transient-current or distortion of waveforms in power systems near by battery chargers because of harmonics and large peak-current, low power factor, etc., caused by the non-linearity of these devices. Recently, power factor control, line current peak-cut, harmonics reduction which was ignored in past is more and more important. In this paper, to solve those problems we will improve the characteristics of voltage rising and propose the high power factor converter circuit for battery chargers. Our proposed system convert commutated voltage to AC resonant wave in high frequency inverter and rectify the link voltages passed high-frequency transformer and transfer the DC voltages. Especially, the effect using these converter system can be improved very large by power factor control and we have to verify the possibilities of improvement through the experiment of Pb-Acid battery application.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.697-700
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• 2004

The SBT$(Sr_{0.8}Bi_{2.4}Ta_2O_9)$ thin films for semiconductor device were deposited on Pt-coated $Pt/TiO_2/SiO_2Si$ wafer by RF magnetron sputtering method at $400[^{\circ}C]$ and annealed at the temperature range from $600[^{\circ}C]$ to $850[^{\circ}C]$. The top electrodes(Pt) were deposited on SBT thin film by DC sputtering method. The crystallinity of SBT thin films were increased with increase of annealing temperature in the temperature range of $600[{\circ}C]\sim850[^{\circ}C]$. The annealing temperature properties were to be most excellent in the case of annealed SBT thin film at $750^{\circ}C]$. And, the maximum remanent polarization$(2P_r)$ and the coercive electric field$(E_c)$ at annealing temperature of $750[^{\circ}C]$ obtained about $11.60[{\mu}C/cm^2]$ and 48[kV/cm], respectively. Specially, it was seen that fatigue properties does not change in $10^{10}$ switching cycle.

• Journal of the Semiconductor & Display Technology
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• v.16 no.2
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• pp.94-97
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• 2017

Amorphous Si has been used for data processing circuits in flat panel displays. However, low mobility of the amorphous Si is a limiting factor for the data transmission speed. Metal oxides such as ZnO have been studied to replace the amorphous Si. ZnO is a wide bandgap (3.3 eV) semiconductor with high mobility and good optical transparency. When ZnO is grown by sputtering with $O_2$ as an oxidizer, there can be many ion species arising from $O_2$ decomposition. $O^+$, $O_2{^+}$, and $O^-$ ions are expected to be the most abundant species, and it is not clear which one contributes to the ZnO growth. We applied alternating substrate voltage (0 V and -70 V) during sputtering growth. We studied changes in transistor characteristics induced by the voltage switching. We also compared ZnO grown by dc and rf sputtering. ZnO film was grown at $450^{\circ}C$ substrate temperature. ZnO thin-film transistor grown with these methods showed $7.5cm^2/Vsec$ mobility, $10^6$ on-off ratio, and -2 V threshold voltage.

• Journal of the Korean Magnetics Society
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• v.12 no.6
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• pp.212-217
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• 2002

The pseudo spin valve with a structure of Tl/CoFe(t $\AA$)/Cu(30 $\AA$)/NiFe(50 $\AA$)/Ta, showing giant magnetoresistance properties by utilizing coercivity difference between only two soft ferromagnetic layers were produced by d.c UHV magnetron sputtering system. In pseudo spin valve Ta/CoFe/Cu/NiFe/Ta, the magnetic and magnetoresistance properties with change of CoFe thickness were investigated. When the thickness of CoFe was 60 $\AA$, a typical MR curve of pseudo spin valve structure was obtained, showing MR ratio of 3.8 cio and the coercivity difference of 27.4 Oe with a sharp change of hard layer switching. When the CoFe thickness was varied from 20 to 100 $\AA$, coercivity difference between two layers was increased to 40 $\AA$. and decreased to 100 $\AA$ gradually. It is thought the change in coercivity of hard layer was due to the crystallinity and magnetostriction of thin CoFe layer. In order to improve the MR property in CoFe/Cu/NiFe trier layer structure, CoFe layer with change of 2-20 $\AA$ thick was inserted between Cu and NiFe. When the thickness of CoFe was 10 $\AA$, MR ratio was 6.7％, showing excellent MR property. This indicates 50 ％ higher than that of CoFe/Cu/NiFe pseudo spin valve.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.49 no.2
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• pp.47-55
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• 2012

A discrete-time(DT) filter with high-order temporal moving average(TMA) using actively-weighted charge sampling is proposed in this paper. To obtain different weight of sampled charge, the variable transconductance OTA is used prior to charge sampler, and the ratio of charge can be effectively weighted by switching the control transistors in the OTA. As a result, high-order TMA operation can be possible by actively-weighted charge sampling. In addition, the transconductance generated by the OTA is relatively accurate and stable by using the size ratio of the control transistors. The high-order TMA filter has small size, increased voltage gain, and low parasitic effects due to the small amount of switches and sampling capacitors. It is implemented in the TSMC $0.18-{\mu}m$ CMOS process by TMA-$2^2$. The simulated voltage gain is about 16.7 dB, and P1dB and IIP3 are -32.5 dBm and -23.7 dBm, respectively. DC current consumption is about 9.7 mA.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.6
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• pp.60-67
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• 2008

A low-power 2.4GHz fractional-N frequency synthesizer has been designed for 2.4GHz ISM band applications such as Bluetooth, Zigbee, and WLAN. To achieve low-power characteristic, the design has been focused on the power optimization of power-hungry blocks such as VCO, prescaler, and ${\Sigma}-{\Delta}$ modulator. An NP-core type VCO is adopted to optimize both phase noise and power consumption. Dynamic D-F/Fs with no static DC current are employed in designing the low-power prescaler circuit. The ${\Sigma}-{\Delta}$ modulator is designed using a modulus mapping circuit for reducing hardware complexity and power consumption. The designed frequency synthesizer which was fabricated using a $0.18{\mu}m$ CMOS process consumes 7.9mA from a single 1.8V supply voltage. The experimental results show that a phase noise of -118dBc/Hz at 1MHz offset, the reference spur of -70dBc at 25MHz offset, and the channel switching time of $15{\mu}s$ over 25MHz transition have been achieved. The designed chip occupies an area of $1.16mm^2$ including pads where the core area is only $0.64mm^2$.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.4
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• pp.65-73
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• 2003

This paper presents the implementation of an analog signal-processing ASIS to detect an angular velocity signal from a vibrator angular velocity detection sensor. The output of the sensor to be charge appeared as the variation of the capacitance value in the structure of the sensor was detected using charge amplifiers and a self oscillation circuit for driving the sensor was implemented with a sinusoidal self oscillation circuit using the resonance characteristics of the sensor. Specially an automatic gain control circuit was utilized to prevent the deterioration of self-oscillation characteristics due to the external elements such as the characteristic variation of the sensor process and the temperature variation. The angular velocity signal, amplitude-mod)Hated in the operation characteristics of the sensor, was demodulated using a synchronous detection circuit. A switching multiplication circuit was used in the synchronous detection circuit to prevent the magnitude variation of detected signal caused by the amplitude variation of the carrier signal. The ASIC was designed and implemented using 0.5${\mu}{\textrm}{m}$ CMOS process. The chip size was 1.2mm x 1mm. In the experiment under the supply voltage of 3V, the ASIC consumed the supply current of 3.6mA and noise spectrum density from dc to 50Hz was in the range of -95 dBrms/√Hz and -100 dBrms/√Hz when the ASIC, coupled with the sensor, was in normal operation.

• Journal of the Korean Society of Safety
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• v.33 no.1
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• pp.28-34
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• 2018

The purpose of this study is to fabricate a sensor module to detect the resistive leakage current (Igr) in real time that occurs to low voltage electric lines and to verify its reliability. In the case of the developed sensor module, wires are inserted into the zero current transformer (ZCT) and current transformer (CT) in advance and then the branch line is connected to the circuit breaker. The measurement result of the resistance of the distribution panel equipped with the developed sensor module shows that the resistance is $0.151m{\Omega}$ between the R and R phases, $0.169m{\Omega}$ between the S and S phases, and $0.178m{\Omega}$ between the T and T phases, respectively. The insulation resistance measured at AC 500 V and 1,000 V is $0.08m{\Omega}$ between the R, S, T and N phases, respectively. Then, the insulation resistance measured at DC 500 V is $83.3G{\Omega}$ between the R, S, T and G terminal, respectively. In addition, the applied withstanding voltage is AC 220 V/380 V/440 V and it was found that characteristics between all phases are good. This study measured the standby power by installing the developed sensor module at the rear of the MCCB and switching the circuit breaker on sequentially. The standby power is 1.350 W when one circuit breaker is turned on, 1.690 W when 2 circuit breakers are turned on, and 4.371 W when 10 circuit breakers are turned on. This study also verified the reliability of the standby power of the distribution panel equipped with the developed sensor module using the Minitab Program (Minitab PGM). Since the analysis shows the statistical average of 1.34627 in the reliable range of normal distribution, standard deviation of 0.001874, AD of 0.554, and P value of 0.140, it is found that the distribution panel equipped with the developed sensor module has high reliability.

• Journal of the Korean Society of Marine Environment & Safety
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• v.21 no.6
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• pp.759-769
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• 2015

Diode rectifiers are very popular in industry. However, they include large low-order harmonics in the input current and do not satisfy harmonic current content restrictions. To reduce the harmonics to the power system, several methods have been introduced. It is heavy and expensive solution to use passive filters as the solution for high power application. Another solution for the harmonic filter is utilization of active filter, but it is too expensive solution. Diode rectifiers with configurations using switching device have been introduced, but they are very complicated. The combined 12-pulse diode rectifier with the square auxiliary voltage supply has been introduced. It has the advantages that auxiliary circuit is simple and inexpensive compared to other strategies. The advanced auxiliary voltage supply in this thesis is presented as a new solution. When the square auxiliary voltage supply applied, the improvement of THD is 6~60[%] in whole load range. But when the advanced auxiliary voltage supply applied, it shows stable and excellent reduction effect of THD as 57~71[%]. Especially, for the case with 10[%] load factor, reduction effect of THD has little effect as 6[%] in the case of inserting a square auxiliary voltage supply. But when the proposed new solution applied, reduction effect has excellent effect as 71[%]. Theoretical analysis of the combined 12-pulse diode rectifier with the advanced auxiliary voltage supply is presented and control methods of the auxiliary supply is proposed. The reduction in the input current harmonics is verified by simulation using software PSIM.