• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.124-124
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• 2010

Currently, extreme ultraviolet lithography (EUVL) is being investigated for next generation lithography. EUVL is one of competitive lithographic technologies for sub-22nm fabrication of nano-scale Si devices that can possibly replace the conventional photolithography used to make today's microcircuits. Among the core EUVL technologies, mask fabrication is of considerable importance due to the use of new reflective optics having a completely different configuration compared to those of conventional photolithography. Therefore, new materials and new mask fabrication process are required for high performance EUVL mask fabrication. This study investigated the etching properties of SnO2 (Tin Oxide) as a new absorber material for EUVL binary mask. The EUVL mask structure used for etching is SnO2 (absorber layer) / Ru (capping / etch stop layer) / Mo-Si multilayer (reflective layer) / Si (substrate). Since the Ru etch stop layer should not be etched, infinitely high selectivity of SnO2 layer to Ru ESL is required. To obtain infinitely high etch selectivity and very low LER (line edge roughness) values, etch parameters of gas flow ratio, top electrode power, dc self - bias voltage (Vdc), and etch time were varied in inductively coupled Cl2/Ar plasmas. For certain process window, infinitely high etch selectivity of SnO2 to Ru ESL could be obtained by optimizing the process parameters. Etch characteristics were measured by on scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) analyses. Detailed mechanisms for ultra-high etch selectivity will be discussed.

• Journal of Power Electronics
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• v.11 no.5
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• pp.734-742
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• 2011

In this paper a robust method is presented for the combined design of STATCOM and Power System Stabilizer (PSS) controllers in order to enhance the damping of the low frequency oscillations in power systems. The combined design problems among PSS and STATCOM internal ac and dc voltage controllers has been taken into consideration. The equations that describe the proposed system have been linearized and a Fuzzy Logic Controller (FLC) has been designed for the PSS. Then, the Particle Swarm Optimization technique (PSO) which has a strong ability to find the most optimistic results is employed to search for the optimal STATCOM controller parameters. The proposed controllers are evaluated on a single machine infinite bus power system with the STATCOM installed in the midpoint of the transmission line. The results analysis reveals that the combined design has an excellent capability in damping a power system's low frequency oscillations, and that it greatly enhances the dynamic stability of power systems. Moreover, a system performance analysis under different operating conditions and some performance indices studies show the effectiveness of the combined design.

• Journal of the Korean Society of Marine Environment & Safety
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• v.21 no.1
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• pp.97-102
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• 2015

The long line fishing machine is combined with motor and two disc rollers has used on the small size fishing-boat under 1 ton located in near Jeollanam-do seaside. The long line fishing motor is controlled only one direction because the fishing line is loaded heavily at pulling up. On this paper we made the long line fishing 400W power motor controller which it was usually applied under 1 ton fishing boat, and designed the controller using PWM chip, Half bridge driver and MOSFET for one direction motor control. Furthermore some user convenience devices were added like battery indicator and safety protection circuit for battery overdischarge and battery source wire mismatch connection. So we protected the battery from overdicharging when the battery voltage was below 11.5V and fishermen didn't need to worry about source lines misconnection anymore. We confirmed the test version of controller was the good working condition at land and sea.

• The Transactions of the Korean Institute of Power Electronics
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• v.2 no.1
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• pp.33-38
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• 1997

Generally, various semiconductor switching devices for power systems are used in battery chargers for electric vehicle. When these used, it takes the problems of transient-current or distortion of waveforms in power systems near by battery chargers because of harmonics and large peak-current, low power factor, etc., caused by the non-linearity of these devices. Recently, power factor control, line current peak-cut, harmonics reduction which was ignored in past is more and more important. In this paper, to solve those problems we will improve the characteristics of voltage rising and propose the high power factor converter circuit for battery chargers. Our proposed system convert commutated voltage to AC resonant wave in high frequency inverter and rectify the link voltages passed high-frequency transformer and transfer the DC voltages. Especially, the effect using these converter system can be improved very large by power factor control and we have to verify the possibilities of improvement through the experiment of Pb-Acid battery application.

• Journal of the Korean Society of Fisheries and Ocean Technology
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• v.31 no.2
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• pp.190-198
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• 1995

Many industrial servo amplifiers employ power transister as output device. Thyristor converters are not adopted to drive servo motor, although thyristor is superior to power TR in power rating, noise immunity, price, and size. The reason is, thyristor has no ability of self turn - off. Here in this paper line commutation, in which thyristor is turned off naturally since cathode voltage is higher than anode as time goes by, is employed to turn on thyristor with a delicate sequence. We developed thyristor servo amplifier which does not cause any damage on thyristor because it is designed to prevent triggering the two SCRs in the same arm simultaneously. And it was made clearly how to trigger SCR without any power line shorting and also harmonic analysis is carried out with the aid of FFT analyzer and proved that it can be used even severe reactive load. The designed circuit operated as a good DC amplifier in conventinal servomotor and the results can be use as a position control system application.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.18 no.6
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• pp.187-193
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• 2018

There has been a gradual increase in the demand for the electric power in Korea. In order to meet the demand, power station should have technical functions with increased effectiveness. When accident happens in electric machinery at power stations, huge amount of economic losses and mulfunction of equipments occur. One of the accidents is a deteriorated cables operating power stations. In order to prevent cable accident in advance, we should monitor the insulation status of the cable. Cable accidents are resulting from the junctions. We have developed and installed a device in order to identify the status of junction part of power cable at Korea Western Power Co., Ltd.. We performed an accurate diagnosis for the stable utilization of junctions where the accidents occurs most frequently, and to increase the reliability. In this paper, we present the concepts of our device and the method of monitoring diagnosis for the stable use of junctions at cables predicting the life time of cables by analyzing the data obtained by the device. We also present the hardware aspect of the device we have developed.

• Journal of the Korean Vacuum Society
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• v.6 no.2
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• pp.136-142
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• 1997

An/n-GaAs(100) Schottky barrier diode has been investigated by using electoreflectance(ER). From the observed Franz-Keldysh oscillatins(FKO), the internal electric field(Ei) of the sample is $5.76\times 10^{4}$V/cm at 300 K. As the modulation voltage($V_{ac}$) IS changed, the line shape of ER signal does not change but its amplitude various linerly. For increasing forward and reverse dc bias boltage($V_{bias}$), the amplitude of ER signal decreases. The internal electric field decreased from $19.3\times 10^4\sim4.39\times10^4$V/cm as $V_{bias}$ INCREASES FROM -5.0 V TO 0.6 V. For Au/n-GaAs the valve of built-in voltage($V_{bi}$) determined from the plot of $V_{bias}$ versus $E_i^2$ is 0.70 V. This value agrees with that observed in the plot of $V_{bias}$ versus amplitude of FKO peak. In addition, the carrier concentraion(N) and potential barrier($\Phi$) of the sample at 300 K are found to be about $2.4\times 10^{16}\textrm{cm}^{-3}$ and 0.78 eV, respectively.

• Proceedings of the KIEE Conference
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• 2015.07a
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• pp.818-819
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• 2015

PAL-XFEL 장치에 사용 할 고전압 펄스 모듈레이터 출력파워는 수 ${\mu}s$ 범위의 짧은 고전압(400 kV), 대전류(500 A) 펄스를 요구한다. 이러한 펄스파워를 얻기 위해서 PFN(Pulse Forming Network)에 에너지를 축적하고, 플라즈마 스위치인 싸이라트론을 통하여 에너지를 신속하게 클라이스트론 쪽으로 전달한다. 클라이스트론은 모듈레이터에서 공급하는 펄스 전원을 이용하여 RF를 증폭하는 대출력 고주파 증폭장치이다. 고전압 펄스 모듈레이터 제어기는 고속펄스 신호처리 모듈(Fast Pulse Signal Conditioning Module), PLC(Programmable Logic Controller)로 구성되어 있다. 고전압 펄스 모듈레이터에 사용하는 대용량 싸이라트론은 고전력을 스위칭 할 때 발생하는 스위칭 노이즈는 매우 크다. 이러한 노이즈는 모듈레이터의 출력 시그널인 빔 전압, 빔 전류, EOLC(End of Line Clipper) 전류, DC high voltage에 섞여 있으면서 신호 왜곡 및 제어장치의 고장을 유발시킨다. 이처럼 노이즈가 많이 포함되어 있는 아닐로그 신호를 깨끗한 신호(a clean signal)로 바꾸어주는 노이즈 필터링 장치인 고속펄스 신호처리 모듈을 제작하여 실험한 결과를 알아보고 모듈레이터 인터록 시스템인 PLC에서 Dynamic Interlock의 응답시간을 빠르게 하기위한 회로 수정에 대한 결과에 관하여 기술하고자 한다.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.285-285
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• 2011

EUVL (Extreme Ultra Violet Lithography) is one of competitive lithographic technologies for sub-30nm fabrication of nano-scale Si devices that can possibly replace the conventional photolithography used to make today's microcircuits. Among the core EUVL technologies, mask fabrication is of considerable importance since the use of new reflective optics having a completely different configuration compared to those of conventional photolithography. Therefore new materials and new mask fabrication process are required for high performance EUVL mask fabrication. This study investigated the etching properties of SnO2 (Tin Oxide) as a new absorber material for EUVL binary mask. The EUVL mask structure used for etching is SnO2 (absorber layer) / Ru (capping / etch stop layer) / Mo-Si multilayer (reflective layer) / Si (substrate). Since the Ru etch stop layer should not be etched, infinitely high selectivity of SnO2 layer to Ru ESL is required. To obtain infinitely high etch selectivity and very low LER (line edge roughness) values, etch parameters of gas flow ratio, top electrode power, dc self - bias voltage (Vdc), and etch time were varied in inductively coupled Cl2/Ar plasmas. For certain process window, infinitely high etch selectivity of SnO2 to Ru ESL could be obtained by optimizing the process parameters. Etch characteristics were measured by on scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) analyses. Detailed mechanisms for ultra-high etch selectivity will be discussed.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.12
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• pp.51-59
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• 1993

A 4${\times}10^{19}cm^{3}$ carbon-doped base AlGaAs/GaAs HBY was grown using carbontetracholoride(CCl$_4$) by atmospheric pressure MOCVD. Abruptness of emitter-base junction was characterized by SIMS(secondary ion mass spectorscopy) and the doping concentration of base layer was confirmed by DXRD(double crystal X-ray diffractometry). Mesa-type HBTs were fabricated using wet etching and lift-off technique. The base sheet resistance of R$_{sheet}$=550${\Omega}$/square was measured using TLM(transmission line model) method. The fabricated transistor achieved a collector-base junction breakdown voltage of BV$_{CBO}$=25V and a critical collector current density of J$_{O}$=40kA/cm$^2$ at V$_{CE}$=2V. The 50$\times$100$\mu$$^2$ emitter transistor showed a common emitter DC current gain of h$_{FE}$=30 at a collector current density of JS1CT=5kA/cm$^2$ and a base current ideality factor of ηS1EBT=1.4. The high frequency characterization of 5$\times$50$\mu$m$^2$ emitter transistor was carried out by on-wafer S-parameter measurement at 0.1~18.1GHz. Current gain cutoff frequency of f$_{T}$=27GHz and maximum oscillation frequency of f$_{max}$=16GHz were obtained from the measured Sparameter and device parameters of small-signal lumped-element equivalent network were extracted using Libra software. The fabricated HBT was proved to be useful to high speed and power spplications.