• 전력전자학회논문지
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• 제11권5호
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• pp.409-416
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• 2006

LLT 변압기 적용 LLC 직렬공진컨버터의 동작특성에 대해 설명하였다. 본 논문에서는 1차측 권선과 2차측 권선을 분리하고, 변압기 중간에 공극(Air-Gap)을 삽입한 일체화된 LLT 변압기를 적용하였다. 이와 같이 적용된 LLT 변압기의 경우 1차측 누설인덕턴스만이 증가되는 것이 아니고 2차측 누설인덕턴스 또한 증가되게 된다. 이렇게 증가된 2차측 누설인덕턴스는 전압이득 특성곡선에 있어 LLC 직렬공진컨버터에 적용한 변압기를 사용한 경우보다 전체적으로 높은 전압이득 특성을 가지게 된다. 따라서 본 논문에서는 2차측 누설인덕턴스를 고려한 일체화된 LLT 변압기적용 LLC 직렬공진컨버터에 대해 이론적으로 해석하고 시뮬레이션 하였으며, 400W급 시제품을 제작하여 실험한 결과에 대해 서술하였다.

• 전력전자학회논문지
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• 제12권6호
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• pp.472-482
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• 2007

본 논문에서는 PDP TV 전원에 적용된 LLT 변압기를 사용한 LLC 직렬공진 컨버터의 설계과정과 실험결과에 대해 서술하였다. 인덕터와 변압기를 하나의 변압기로 사용한 LLT 변압기는 전선방법과 코어의 공극에 따라 1, 2 차측 누설인덕턴스가 함께 증가한다. 이러한 LLT 변압기의 증가된 1, 2차측 누설인덕턴스는 LLC 직렬공진컨버터의 DC 전압이득에 영향을 준다. 따라서 본 논문에서는 LLT 변압기 적용 LLC 직렬 공진 컨버터의 전압이득 특성과 실험 결과에 대해 Math-CAD 시뮬레이션을 기본으로 한 이론적인 해석 및 600W 시제품을 통해 증명하였다.

• International Journal of Fuzzy Logic and Intelligent Systems
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• 제7권1호
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• pp.77-84
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• 2007

In this paper, Takagi-Sugeno (TS) fuzzy integral control is investigated to regulate the output voltage of an asymmetric half-bridge (AHB) DC/DC converter; First, we model the dynamic characteristics of the AHB DC/DC converter with state-space averaging method and small perturbation at an operating point. After introducing an additional integral state of the output regulation error, we obtain the $5^{th}$-order TS fuzzy model of the AHB DC/DC converter. Second, the concept of the parallel distributed compensation is applied to design the fuzzy integral controller, in which the state feedback gains are obtained by solving the linear matrix inequalities (LMIs). Finally, simulation results are presented to show the performance of the considered design method as the output voltage regulator and compared to the results for which the conventional loop gain method is used.

• 전력전자학회논문지
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• 제18권5호
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• pp.429-436
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• 2013

In this paper, For achieving the high gain and resonant characteristics in both of the power flow directions, a bidirectional resonant dc-dc converter with auxiliary switches is proposed. Auxiliary switches are connected in the primary and secondary side of the bidirectional resonant dc-dc converter, respectively. A 800W prototype bidirectional resonant dc-dc converter for interfacing the 400V DC buses in the energy storage system is built and tested to verify the validity and applicability of this proposed converter.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2007년도 하계학술대회 논문집
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• pp.424-427
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• 2007

The LLC series resonant converter with a LLT (Inductor-Inductor-Transformer) transformer for PDP power supply is presented. LLT transformer used to combine the inductor and transformer into one unit has the increased leakage inductance in the primary and secondary due to the winding method and the use of the gaped core. The increased leakage inductance in the primary and secondary of LLT transformer can be impacted on the DC voltage gain characteristics of LLC series resonant converter. In this paper, DC gain characteristics and the experimental results of the LLC series resonant converter with a LLT transformer are verified on the Math-CAD simulation based on the theoretical analysis and the 600W experimental prototype.

• 전력전자학회논문지
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• 제9권2호
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• pp.171-177
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• 2004

일반적으로 압전변압기는 고압을 출력하는 전원장치로 사용되고 있으나, 최근 어댑터와 같은 AC/DC 전원장치에 이를 채용하려는 움직임이 활발히 전개되고 있다. AC/DC 컨버터의 소형 경량화론 위해 기존의 권선형 변압기 대신 압전변압기는 AC/DC 컨버터용이 아닌 LCD 백-라이트구동용으로 제작된 압전변압기(piezoelectric transformer)를 사용하여 AC/DC 컨버터의 기본 특성을 고찰하고자 한다. 압전변압기의 재질, 특성 값으로부터 등가회로의 모델링을 수행하고, 이를 시뮬레이션과 실험을 통하여 검증한다.

• 조명전기설비학회논문지
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• 제23권7호
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• pp.20-28
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• 2009

This paper presents the design of zero current switching ZCS pulse frequency modulation type DC-DC converter for magnetron power supply. A magnetron serving as the microwave source in a microwave oven is driven by a switch mode power supply (SMPS). SMPSs have the advantages of improved efficiency, reduced size and weight, regulation and the ability to operate directly from the converter DC bus. The demands of the load system and the design of the power supply required to produce constant power at 4[kV]. A magnetron power supply requires the ability to limit the load current under short circuit conditions. The current source series resonant converter is a circuit configuration which can achieve this. The main features of the proposed converter are an inherent protection against a short circuit at the output, a high voltage gain and zero current switching over a large range of output power. These characteristics make it a viable choice for the implementation of a high voltage magnetron power supply.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2012년도 전력전자학술대회 논문집
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• pp.41-42
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• 2012

For achieving the high gain and resonant characteristics in both of the power flow directions, a bidirectional resonant dc-dc converter with auxiliary switches is proposed. Auxiliary switches are connected in the primary and secondary side of the bidirectional resonant dc-dc converter, respectively. A 1kW prototype bidirectional resonant dc-dc converter for interfacing the 400V DC buses in the energy storage system is built and tested to verify the validity and applicability of this proposed converter.

• 센서학회지
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• 제30권6호
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• pp.436-440
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• 2021

The impact of the gate length (L_g) on the DC and high-frequency characteristics of indium-rich In_0.8Ga_0.2As channel high-electron mobility transistors (HEMTs) on a 3-inch InP substrate was inverstigated. HEMTs with a source-to-drain spacing (L_SD) of 0.8 ㎛ with different values of L_g ranging from 1 ㎛ to 19 nm were fabricated, and their DC and RF responses were measured and analyzed in detail. In addition, a T-shaped gate with a gate stem height as high as 200 nm was utilized to minimize the parasitic gate capacitance during device fabrication. The threshold voltage (V_T) roll-off behavior against L_g was observed clearly, and the maximum transconductance (g_{m_max}) improved as L_g scaled down to 19 nm. In particular, the device with an L_g of 19 nm with an L_SD of 0.8 mm exhibited an excellent combination of DC and RF characteristics, such as a g_{m_max} of 2.5 mS/㎛, On resistance (R_ON) of 261 Ω·㎛, current-gain cutoff frequency (f_T) of 738 GHz, and maximum oscillation frequency (f_max) of 492 GHz. The results indicate that the reduction of L_g to 19 nm improves the DC and RF characteristics of InGaAs HEMTs, and a possible increase in the parasitic capacitance component, associated with T-shap, remains negligible in the device architecture.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2002년도 하계종합학술대회 논문집(2)
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• pp.249-252
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• 2002

we have studied the characteristics of PHEMT's with gate recess etching method. The DC characterization of PHTMT fabricated with the wide single recess methods is a maximum drain current density of 319.4 ㎃/mm and a peak transconductance of 336.7 ㎳/mm. The RF measurements were obtained in the frequency range of 1~50GHz. At 50GHz, 3.69dB of 521 gain were obtained and a current gain cut-off frequency(f$_{T}$) of 113 CH and a maximum frequency of oscillation(f$_{max}$) of 172 Ghz were achieved from this device. On the other hand, a maximum drain current of 367 mA/mm, a peak transconduclancc of 504.6 mS/mm, S$_{21}$ gain of 2.94 dB, a current gain cut-off frequency(f$_{T}$) of 101 CH and a maximum frequency of oscillation(f$_{max}$) of 113 fa were achieved from the PHEMT's fabricated by the .narrow single recess methods.methods.