• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.12 no.1
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• pp.71-76
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• 2001

A Ka Band 3-stage MMIC (Monolithic Microwave Integrated Circuits) LNA (Low Noise Amplifiers) has been designed and fabricated far the Ka band satellite communications and BWLL(Broad Band Wireless Local Loop)system. The MMIC LNA consists of two single-ended type amplification stages and one balanced type amplification stage to satisfy noise figure, high gain and amplitude linearity. The 0.15${\mu}{\textrm}{m}$ pHEMT has been used to provide a ultra low noise figure and high gain amplification. Series and Shunt feedback circuits and λ/4 short lines were inserted to ensure high stability over the frequency range form DC to 80 GHz. The size of the MMIC LNA is 3.1mm$\times$2.4mm(7.44mm$^2$). The on wafer measured performance of the MMIC LNA, which agreed with the designed performance, showed the noise figure of less than 2.0 dB, and the gain of more than 26 dB, over frequency ranges from 22 GHz to 30 GHz.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.1
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• pp.38-46
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• 1999

o.25${\mu}m$ T-shaped gate P-HEMT is fabricated and used for design of X0band three stage monolithic microwave integrated circuit(MMIC) low noise amplifier(LNA). The fabricated P-HEMT exhibits an extrinsis transconductance of 400mS/mm and a drain current of 400mA/mm. The RF and noise characteristics show that the current gain cut off frequency is 65GHz and minimum noise figure(NFmin) of 0.7dB with an associated gain of 14.8dB at 9GHz. In the design of the three stage LNA, we have used the inductive series feedback circuit topology with the short stub. The effects of series feedback to the noise figure, the gain, and the stability have been investigated to find the optimal short stub length. The designed three staage LNA showed a gain of above 33dB, a noise figure of under 1.2dB, and ainput/output return loss of under 15dB and 14dB, respectively. The results show that the fabricated P-HEMT is very suitable for a X-band LNA with high gain.

• Proceedings of the KIEE Conference
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• 2004.07c
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• pp.2034-2036
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• 2004

In this paper, a low noise amplifier (LNA) in receiver of Low Noise Block Down Converter (LNB) for direct broadcasting service (DBS) is implemented by using GaAs HEMT. The LNA is designed for operation between 10.7GHz-12.7GHz. The LNA consists of input, output matching circuits, DC-blocks and RF-chokes. Simulation result of the LNA shows that a noise figure is less than 1.4dB and a gain is greater than 9.2dB in the bandwidth of 10.7 to 12.7GHz with good flatness of 0.1dB.

• Journal of Power Electronics
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• v.15 no.3
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• pp.786-795
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• 2015

In this paper, an active damping control scheme for LLCL filters based on the PR (proportional-resonant) regulator is proposed for grid-connected three-level T-type PWM converter systems. The PR controller gives an infinite gain at the resonance frequency. As a result, the oscillation can be suppressed at that frequency. In order to improve the stability of the system in the case of grid impedance variations, online grid impedance estimation is applied. Simulation and experimental results have verified the effectiveness of the proposed scheme for three-phase T-type AC/DC PWM converters.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.129-129
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• 2009

In this paper, a tunable microstrip patch antenna designed using RF MEMS switches is reported. The design and simulation antenna were performed using high frequency structure simulator (HFSS). The antenna was designed in ISM Band and operates simultaneously at 2.4 GHz and 5.7 GHz with a -10 dB return-loss bandwidth of 20 MHz and 180 MHz, respect-tively. To obtain high efficiency and improve integrated ability, the High Resistivity Silicon (HRS) wafer was used for the antenna. The antenna achieved high gain with 8 dB at 5.7 GHzand 1.5 dB at 2.4 GHz. The RF MEMS DC contact switches was simulated and analysis by ANSYS software.

• Proceedings of the IEEK Conference
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• 2004.06b
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• pp.557-560
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• 2004

In this study, we design the one-chip PWM IC for SMPS (Switching Mode Power Supply) application. We determine the IC spec. and simulated each block of PWM IC (Reference, Error amp., Comparator, Oscillator) with Smart Spice (SILVACO Circuit Simulation Tool). Reference circuits generate constant voltage(5V) in the various of power supply and temperature condition. Error amp. is designed with large DC gain (${\simeq}65dB$), unity frequency (${\simeq}190kHz$) and large PM($75^{\circ}$).Saw tooth generators operate with 20K oscillation frequency (external resistor, capacitor).

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.3
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• pp.341-346
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• 2017

In this paper, we present a 60 GHz on-off keying (OOK) modulator in a 90 nm CMOS. The modulator employs a current-reuse technique and a switching modulation for low DC power dissipation, high on/off isolation, and high data rate. The measured gain of the modulator, on/off isolation, and output 1-dB compression point is 9.1 dB, 24.3 dB, and 5.1 dBm, respectively, at 60 GHz. The modulator consumes power consumption of 18 mW, and is capable of handling data rates of 8 Gb/s at bit error rate of less than $10^{-6}$ for $231^{-1}$ PRBS over a distance of 10-cm with an OOK receiver module.

• Proceedings of the KIPE Conference
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• 2016.07a
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• pp.405-406
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• 2016

A bidirectional secondary LLC resonant converter with auxiliary switches and an additional inductor is proposed to achieve the high gain characteristics of LLC resonant convertors. Auxiliary switches, an additional inductor and a resonant capacitor are connected in the high voltage secondary side of the proposed converter. The ac analysis and operating characteristics of bidirectional secondary LLC resonant converter are investigated. A 1kW prototype bidirectional secondary LLC resonant converter connected to the $400V_{DC}$ buses is designed and tested to confirm the validity and applicability of the proposed converter.

• ETRI Journal
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• v.30 no.2
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• pp.249-254
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• 2008

In this paper, we demonstrate an electrically band-limited carrier-suppressed return-to-zero (EB-CSRZ) signal generator operating up to a 10 Gbps data rate comprising a single-stage Mach-Zehnder modulator and a wideband signal mixer. The wideband signal mixer comprises inverter stages, a mixing stage, and a gain amplifier. It is implemented by using a 0.13 ${\mu}m$ CMOS technology. Its transmission response shows a frequency range from DC to 6.4 GHz, and the isolation response between data and clock signals is about 21 dB at 6.4 GHz. Experimental results show optical spectral narrowing due to incorporating an electrical band-limiting filter and some waveform distortion due to bandwidth limitation by the filter. At 10 Gbps transmission, the chromatic dispersion tolerance of the EB-CSRZ signal is better than that of NRZ-modulated signal in single-mode fiber.

• Proceedings of the KIEE Conference
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• 2011.07a
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• pp.1477-1478
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• 2011

Solution processed zinc tin oxide (ZTO) thin films were studied using a spin coating for the fabrication of thin film transistors and simple circuits. The solution processed thin film transistors (W/L = 100/10 ${\mu}m$) have the average saturation mobility of 1.9 $cm^2$/Vs, threshold voltage of 20 V, and subthreshold slope of 0.5 V/decade. The dc characteristics of an inverter with $W_{load}=100\;{\mu}m$ and $W_{drive}=10\;{\mu}m$, measured under votage supply of $V_{DD}$ = +50 V. The inverter beta ratio is 20 ($R=(W_{drived}/L_{drive})/(W_{load}/L_{load})=20$) and $gain_{max}$ is 2. The characteristics of an oscillator were measured under voltage supply of $V_{DD}$ = +60 V.